Untitled
Abstract: No abstract text available
Text: SB61H1024BT-XG Silicon-Based Technology 131,072 x8-Bits Very High Speed and Low Power Memory STATIC CMOS RAM PRELIMINARY Description: The SB61H1024BT-XG series products are 131,072-words by 8-bits static RAM fabricated with advanced 8" wafer submicron CMOS technology. Using unique CMOS peripheral circuits and
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Original
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SB61H1024BT-XG
SB61H1024BT-XG
072-words
32-pin
20mil
072-word
500mV
|
PDF
|
Untitled
Abstract: No abstract text available
Text: SB61H1024BT-XG Silicon-Based Technology 131,072 x8-Bits Very High Speed and Low Power Memory STATIC CMOS RAM PRELIMINARY Description: The SB61H1024BT-XG series products are 131,072-words by 8-bits static RAM fabricated with advanced 8" wafer submicron CMOS technology. Using unique CMOS peripheral circuits and
|
Original
|
SB61H1024BT-XG
SB61H1024BT-XG
072-words
32-pin
20mil
072-word
500mV
|
PDF
|
Untitled
Abstract: No abstract text available
Text: SB61H1024BT Silicon-Based Technology 131,072 x8-Bits Very High Speed and Low Power Memory STATIC CMOS RAM PRELIMINARY Description: The SB61H1024BT series products are 131,072-words by 8-bits static RAM fabricated with advanced 8" wafer submicron CMOS technology. Using unique CMOS peripheral circuits and
|
Original
|
SB61H1024BT
SB61H1024BT
072-words
32-pin
20mil
072-word
500mV
|
PDF
|
Untitled
Abstract: No abstract text available
Text: SB61H1024BT Silicon-Based Technology 131,072 x8-Bits Very High Speed and Low Power Memory STATIC CMOS RAM PRELIMINARY Description: The SB61H1024BT series products are 131,072-words by 8-bits static RAM fabricated with advanced 8" wafer submicron CMOS technology. Using unique CMOS peripheral circuits and
|
Original
|
SB61H1024BT
SB61H1024BT
072-words
32-pin
20mil
072-word
500mV
|
PDF
|