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    Rochester Electronics LLC SBS010M-TL-E

    SCHOTTKY BARRIER RECTIFIER DIODE
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    DigiKey SBS010M-TL-E Bulk 123,000 1
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    PEPPERL+FUCHS GmbH SB S01 SAFETY BOX SMART-EX 01

    Ecom Mobile Computing |Pepperl+Fuchs Pa SB S01 SAFETY BOX SMART-EX 01
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    Newark SB S01 SAFETY BOX SMART-EX 01 Bulk 1
    • 1 $208.03
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    MISC. INDUSTRIAL HRD SBS0103

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    Bisco Industries SBS0103 35
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    onsemi SBS010M-TL-E

    15 V, 2 A Schottky Barrier Rectifier Diode '
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    Rochester Electronics SBS010M-TL-E 44,296 1
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    Pop Rivets AD63-66SSBS012

    ALUM OPEN END RIVET
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    DB Roberts AD63-66SSBS012
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    SBS01 Datasheets (4)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    SBS010M Sanyo Semiconductor SBS010M Original PDF
    SBS010M Sanyo Semiconductor Small Signal Schottky Barrier Diodes Original PDF
    SBS010M-E Sanyo Semiconductor DIODE SCHOTTKY 15V 2A 3MCPH3 Original PDF
    SBS011 Sanyo Semiconductor Small Signal Schottky Barrier Diodes Original PDF

    SBS01 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    diode N1004

    Abstract: CPH5812 MCH3317 N1004 SBS010M TA-3787 74674
    Text: CPH5812 Ordering number : ENN7467A CPH5812 MOSFET : P-Channel Silicon MOSFET SBD : Schottky Barrier Diode DC / DC Converter Applications Features • Composite type with a P-Channel Sillicon MOSFET MCH3317 and a Schottky Barrier Diode (SBS010M) contained in one package facilitating high-density mounting.


    Original     		PDF CPH5812 ENN7467A MCH3317) SBS010M) diode N1004 CPH5812 MCH3317 N1004 SBS010M TA-3787 74674

    Untitled

    Abstract: No abstract text available
    Text: Ordering number : ENN7472 SBS010M Schottky Barrier Diode SBS010M 15V, 2A Rectifier Applications • Package Dimensions High frequency rectification switching regulators, converters, choppers . unit : mm 1305A [SBS010M] 0.15 2 1 0.65 0.07 1.6 3 0.25 • Low forward voltage (IF=0.5A, VF max=0.32V)


    Original     		PDF ENN7472 SBS010M SBS010M]

    Untitled

    Abstract: No abstract text available
    Text: CPH5822 Ordering number : ENN7702 CPH5822 MOSFET : P-Channel Silicon MOSFET SBD : Schottky Barrier Diode General Purpose Switching Device Features • • DC / DC converter applications. Composite type with a P-Channel Sillicon MOSFET MCH3312 and a Schottky Barrier Diode (SBS010M)


    Original     		PDF ENN7702 CPH5822 MCH3312) SBS010M)

    N7472

    Abstract: SBS010M
    Text: SBS010M 注文コード No. N 7 4 7 2 A 三洋半導体データシート 半導体ニューズ No. N7472 とさしかえてください。 SBS010M ショットキバリアダイオード 15V, 2A 整流素子 用途 ・スイッチングレギュレータ , コンバータ , チョッパ等の高周波回路整流用。


    Original     		PDF SBS010M N7472 100mA, 600mm2 TB-00001016 TA-100516 IT05881 IT05882 IT08545 N7472 SBS010M

    MCH3335

    Abstract: MCH5810 SBS011
    Text: MCH5810 Ordering number : ENN8194 MCH5810 MOSFET : P-Channel Silicon MOSFET SBD : Schottky Barrier Diode DC / DC Converter Applications Features • • • Composite type with a P-Channel Sillicon MOSFET MCH3335 and a Schottky Barrier Diode (SBS011) contained in one package facilitating high-density mounting.


    Original     		PDF MCH5810 ENN8194 MCH3335) SBS011) MCH3335 MCH5810 SBS011

    a04466

    Abstract: 82306 marking QJ SCH1305 SCH2809
    Text: SCH2809 Ordering number : ENA0446 SANYO Semiconductors DATA SHEET SCH2809 Features • • • MOSFET : P-Channel Silicon MOSFET SBD : Schottky Barrier Diode General-Purpose Switching Device Applications Composite type with a P-channel sillicon MOSFET SCH1305 and a Schottky barrier diode (SBS018) contained


    Original     		PDF SCH2809 ENA0446 SCH1305) SBS018) A0446-6/6 a04466 82306 marking QJ SCH1305 SCH2809

    diode N1004

    Abstract: N1004 diode CPH5812 n1004 TA-3787 MCH3317 SBS010M N2603
    Text: CPH5812 Ordering number : EN7467B SANYO Semiconductors DATA SHEET CPH5812 MOSFET : P-Channel Silicon MOSFET SBD : Schottky Barrier Diode DC / DC Converter Applications Features • Composite type with a P-Channel Sillicon MOSFET MCH3317 and a Schottky Barrier Diode (SBS010M)


    Original     		PDF CPH5812 EN7467B MCH3317) SBS010M) diode N1004 N1004 diode CPH5812 n1004 TA-3787 MCH3317 SBS010M N2603

    7909 regulator

    Abstract: 7909 voltage regulator 7909 voltage regulator datasheet SBS011
    Text: SBS011 Ordering number : ENN7909 SBS011 Schottky Barrier Diode 15V, 150mA Rectifier Applications • High frequency rectification switching regulators, converters, choppers . Features • • Low forward voltage (IF=150mA, VF max=0.4V). Ultrasmall-sized package permitting applied sets to be made small and slim.


    Original     		PDF SBS011 ENN7909 150mA 150mA, 7909 regulator 7909 voltage regulator 7909 voltage regulator datasheet SBS011

    diode N1004

    Abstract: CPH5822 MCH3312 N1004 SBS010M
    Text: CPH5822 Ordering number : ENN7702A CPH5822 MOSFET : P-Channel Silicon MOSFET SBD : Schottky Barrier Diode General-Purpose Switching Device Applications Features • • DC / DC converter applications. Composite type with a P-Channel Sillicon MOSFET MCH3312 and a Schottky Barrier Diode (SBS010M)


    Original     		PDF CPH5822 ENN7702A MCH3312) SBS010M) diode N1004 CPH5822 MCH3312 N1004 SBS010M

    SCH1406

    Abstract: SCH2806
    Text: SCH2806 Ordering number : ENN7744 SCH2806 MOSFET : N-Channel Silicon MOSFET SBD : Schottky Barrier Diode General-Purpose Switching Device Applications Features • Composite type with an N-channel silicon MOSFET SCH1406 and a Schottky barrier diode (SBS018)


    Original     		PDF SCH2806 ENN7744 SCH1406) SBS018) SCH1406 SCH2806

    AN 7468

    Abstract: diode N1004 ic 74682 TA-3804 CPH5813 MCH3318 N1004 SBS010M 74682
    Text: CPH5813 Ordering number : ENN7468A CPH5813 MOSFET : P-Channel Silicon MOSFET SBD : Schottky Barrier Diode DC / DC Converter Applications Features • Composite type with a P-Channel Sillicon MOSFET MCH3318 and a Schottky Barrier Diode (SBS010M) contained in one package facilitating high-density mounting.


    Original     		PDF CPH5813 ENN7468A MCH3318) SBS010M) AN 7468 diode N1004 ic 74682 TA-3804 CPH5813 MCH3318 N1004 SBS010M 74682

    CPH5835

    Abstract: MCH3309 MCH5835 SBS010M
    Text: CPH5835 注文コード No. N 8 2 0 7 MOSFET : P チャネル MOS 形シリコン電界効果トランジスタ SBD : ショットキバリアダイオード CPH5835 汎用スイッチングデバイス 特長 ・P チャネル MOS 形電界効果トランジスタ MCH3309 とショットキバリアダイオード( SBS010M)を 1 パッケージに


    Original     		PDF CPH5835 MCH3309) SBS010M) 600mm2 12805PE TB-00001006 IT05882 IT05881 CPH5835 MCH3309 MCH5835 SBS010M

    82074

    Abstract: CPH5835 MCH3309 MCH5835 SBS010M
    Text: CPH5835 注文コード No. N 8 2 0 7 三洋半導体データシート N CPH5835 MOSFET : P チャネル MOS 形シリコン電界効果トランジスタ SBD : ショットキバリアダイオード 汎用スイッチングデバイス 特長 ・P チャネル MOS 形電界効果トランジスタ MCH3309 とショットキバリアダイオード( SBS010M)を 1 パッケージに


    Original     		PDF CPH5835 MCH3309) SBS010M) 600mm2 12805PE TB-00001006 IT05882 IT05881 82074 CPH5835 MCH3309 MCH5835 SBS010M

    SBS010M

    Abstract: No abstract text available
    Text: SBS010M Ordering number : ENN7472A SBS010M Schottky Barrier Diode 15V, 2A Rectifier Applications • High frequency rectification switching regulators, converters, choppers . Features • • Low forward voltage (IF=0.5A, VF max=0.32V) (IF=1.0A, VF max=0.35V).


    Original     		PDF SBS010M ENN7472A SBS010M

    SBS011

    Abstract: No abstract text available
    Text: SBS011 注文コード No. N 7 9 0 9 三洋半導体データシート N SBS011 ショットキバリアダイオード 15V, 150mA 整流素子 用途 ・スイッチングレギュレータ , コンバータ , チョッパ等の高周波回路整流用。


    Original     		PDF SBS011 150mA 150mA, 250mm2 100mA 62797GI TA-101058 BX-0698 SBS011

    a04466

    Abstract: a0446
    Text: SCH2809 Ordering number : ENA0446 SCH2809 Features • • • MOSFET : P-Channel Silicon MOSFET SBD : Schottky Barrier Diode General-Purpose Switching Device Applications Composite type with a P-channel sillicon MOSFET SCH1305 and a Schottky barrier diode (SBS018) contained


    Original     		PDF ENA0446 SCH2809 SCH1305) SBS018) A0446-6/6 a04466 a0446

    Untitled

    Abstract: No abstract text available
    Text: SCH2809 SCH2809 Features • • • Ordering number : ENA0446 MOSFET : P-Channel Silicon MOSFET SBD : Schottky Barrier Diode General-Purpose Switching Device Applications Composite type with a P-channel sillicon MOSFET SCH1305 and a Schottky barrier diode (SBS018) contained


    Original     		PDF SCH2809 ENA0446 SCH1305) SBS018) SCH2809/D

    N7472

    Abstract: SBS010M
    Text: SBS010M 注文コード No. N 7 4 7 2 A 三洋半導体ニューズ 半導体ニューズ No. N7472 とさしかえてください。 SBS010M ショットキバリアダイオード 15V, 2A 整流素子 用途 ・スイッチングレギュレータ , コンバータ , チョッパ等の高周波回路整流用。


    Original     		PDF SBS010M N7472 100mA, 600mm2 TB-00001016 TA-100516 IT05881 IT05882 IT08545 N7472 SBS010M

    MCH3406

    Abstract: SBS010M CPH5831
    Text: CPH5831 Ordering number : ENN8220 CPH5831 MOSFET : N-Channel Silicon MOSFET SBD : Schottky Barrier Diode General-Purpose Switching Device Applications Features • • • • DC / DC converters. Composite type with a N-Channel Silicon MOSFET MCH3406 and a Schottky Barrier Diode (SBS010M) contained


    Original     		PDF CPH5831 ENN8220 MCH3406) SBS010M) MCH3406 SBS010M CPH5831

    CPH3309

    Abstract: CPH5835 MCH5835 SBS010M
    Text: CPH5835 Ordering number : ENN8207 CPH5835 MOSFET : P-Channel Silicon MOSFET SBD : Schottky Barrier Diode General-Purpose Switching Device Applications Features Composite type with a P-Channel Sillicon MOSFET CPH3309 and a Schottky Barrier Diode (SBS010M) contained


    Original     		PDF CPH5835 ENN8207 CPH3309) SBS010M) CPH3309 CPH5835 MCH5835 SBS010M

    D8279

    Abstract: M30840MCT M3084
    Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid


    Original     		PDF M32C/84 M32C/84, M32C/84T) 16/32-BIT D8279 M30840MCT M3084

    tc 106-10

    Abstract: smd transistor w J 3 58 bts 425 l1 transistor SMD p02 smd diode p126 P56. smd 013A1 B15 diode smd diode DB 3 C F2N SMD
    Text: REJ09B0034-0131 16/32 M32C/83 Group M32C/83, M32C/83T Hardware Manual RENESAS 16/32-BIT SINGLE-CHIP MICROCOMPUTER M16C FAMILY / M32C/80 SERIES Before using this material, please visit our website to verify that this is the most current document available.


    Original     		PDF REJ09B0034-0131 M32C/83 M32C/83, M32C/83T) 16/32-BIT M32C/80 tc 106-10 smd transistor w J 3 58 bts 425 l1 transistor SMD p02 smd diode p126 P56. smd 013A1 B15 diode smd diode DB 3 C F2N SMD

    on line ups circuit diagrams

    Abstract: 2SK3850 242M SSFP package K3492 3ln03 MCH3435 CPH5612 three phase on line ups circuit diagrams TN6R04
    Text: Ordering number: EP51E MOSFET Series '05-05 TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN Telephone: 81- 0 3-3837-6339, 6340, 6342, Facsimile: 81-(0)3-3837-6377 ●SANYO Electric Co.,Ltd. Semiconductor company Homepage URL: http://www.semic.sanyo.co.jp/index_e.htm


    Original     		PDF EP51E CPH6605 MCH6613 ECH8609 CPH3424 CPH3427 K3614 FW343 FW356 FW360 on line ups circuit diagrams 2SK3850 242M SSFP package K3492 3ln03 MCH3435 CPH5612 three phase on line ups circuit diagrams TN6R04

    Untitled

    Abstract: No abstract text available
    Text: R1 2 4 5 x SERI ES 1.2A, 30V Step Down DC/DC converter NO.EA-269-130322 OUTLINE The R1245x series are CMOS-based Step-down DC/DC converter with internal N-channel high side Tr. The ON resistance of the built-in high-side transistor is 0.35Ω and the R1245 can provide the maximum 1.2A output


    Original     		PDF EA-269-130322 R1245x R1245 Room403, Room109, 10F-1,