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    SC 2910 Search Results

    SC 2910 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    2910ADM/B Rochester Electronics LLC Replacement for AMD part number AM2910ADMB. Buy from authorized manufacturer Rochester Electronics. Visit Rochester Electronics LLC Buy
    2910ALM/B Rochester Electronics LLC Replacement for AMD part number AM2910ALMB. Buy from authorized manufacturer Rochester Electronics. Visit Rochester Electronics LLC Buy
    2910ADM Rochester Electronics LLC 2910A - Microprogram Controller Visit Rochester Electronics LLC Buy
    2910/BQA Rochester Electronics LLC Replacement for AMD part number AM2910. Buy from authorized manufacturer Rochester Electronics. Visit Rochester Electronics LLC Buy
    2910ADC Rochester Electronics LLC Replacement for AMD part number AM2910ADC. Buy from authorized manufacturer Rochester Electronics. Visit Rochester Electronics LLC Buy
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    SC 2910 Price and Stock

    Vishay Intertechnologies WSC0002910R0FTB

    Wirewound Resistors - SMD 2watt 910ohm 1%
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    Mouser Electronics WSC0002910R0FTB
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    onsemi 2SC2910S

    2SC2910 - NPN Epitaxial Planar Silicon Transistor '
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    Rochester Electronics 2SC2910S 1,150 1
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    onsemi 2SC2910T

    NPN Epitaxial Planar Silicon Transistor '
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    Rochester Electronics 2SC2910T 1,395 1
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    Supersonic Inc SC-2910VK

    Vlogging Kit w/LED light & Mic
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    NAC SC-2910VK 1
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    Motorola Semiconductor Products SC29101VFR2

    IN STOCK SHIP TODAY
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    Component Electronics, Inc SC29101VFR2 2,400
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    SC 2910 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: NTJS4151P Trench Power MOSFET −20 V, −4.2 A, Single P−Channel, SC−88 Features • Leading Trench Technology for Low RDS ON Extending Battery Life • SC−88 Small Outline (2x2 mm) for Maximum Circuit Board • • Utilization, Same as SC−70−6


    Original     		PDF NTJS4151P NTJFS4151P/D

    Untitled

    Abstract: No abstract text available
    Text: NVJS4151P Trench Power MOSFET −20 V, −4.1 A, Single P−Channel, SC−88 Features • Leading Trench Technology for Low RDS ON Extending Battery Life • SC−88 Small Outline (2x2 mm) for Maximum Circuit Board • • • Utilization, Same as SC−70−6


    Original     		PDF NVJS4151P NVJS4151P/D

    Untitled

    Abstract: No abstract text available
    Text: NVJS4151P Trench Power MOSFET −20 V, −4.3 A, Single P−Channel, SC−88 Features • Leading Trench Technology for Low RDS ON Extending Battery Life • SC−88 Small Outline (2x2 mm) for Maximum Circuit Board http://onsemi.com Utilization, Same as SC−70−6


    Original     		PDF NVJS4151P NVJS4151P/D

    Untitled

    Abstract: No abstract text available
    Text: NTJS4151P, NVJS4151P Trench Power MOSFET −20 V, −4.2 A, Single P−Channel, SC−88 Features • Leading Trench Technology for Low RDS ON Extending Battery Life • SC−88 Small Outline (2x2 mm) for Maximum Circuit Board • • • Utilization, Same as SC−70−6


    Original     		PDF NTJS4151P, NVJS4151P NTJFS4151P/D

    NTA4151

    Abstract: marking TN NTA4151P, NTE4151P
    Text: NTA4151P, NTE4151P Small Signal MOSFET −20 V, −760 mA, Single P−Channel, Gate Zener, SC−75, SC−89 Features • • • • • Low RDS on for Higher Efficiency and Longer Battery Life Small Outline Package (1.6 x 1.6 mm) SC−75 Standard Gullwing Package


    Original     		PDF NTA4151P, NTE4151P SC-75, SC-89 SC-75 NTA4151P/D NTA4151 marking TN NTA4151P, NTE4151P

    Untitled

    Abstract: No abstract text available
    Text: NTA4151P, NTE4151P Small Signal MOSFET −20 V, −760 mA, Single P−Channel, Gate Zener, SC−75, SC−89 Features • • • • • Low RDS on for Higher Efficiency and Longer Battery Life Small Outline Package (1.6 x 1.6 mm) SC−75 Standard Gullwing Package


    Original     		PDF NTA4151P, NTE4151P SC-75, SC-89 SC-75 NTA4151P/D

    NTA4151P

    Abstract: NTA4151PT1G NTA4151PT1 NTE4151P NTE4151PT1G
    Text: NTA4151P, NTE4151P Small Signal MOSFET −20 V, −760 mA, Single P−Channel, Gate Zener, SC−75, SC−89 Features • • • • • http://onsemi.com Low RDS on for Higher Efficiency and Longer Battery Life Small Outline Package (1.6 x 1.6 mm) SC−75 Standard Gullwing Package


    Original     		PDF NTA4151P, NTE4151P SC-75, SC-89 SC-75 NTA4151P/D NTA4151P NTA4151PT1G NTA4151PT1 NTE4151P NTE4151PT1G

    NTA4151PT1G

    Abstract: NTE4151PT1G NTA4151P NTA4151PT1 NTE4151P NTE4151PT1
    Text: NTA4151P, NTE4151P Small Signal MOSFET −20 V, −760 mA, Single P−Channel, Gate Zener, SC−75, SC−89 Features • • • • • http://onsemi.com Low RDS on for Higher Efficiency and Longer Battery Life Small Outline Package (1.6 x 1.6 mm) SC−75 Standard Gullwing Package


    Original     		PDF NTA4151P, NTE4151P SC-75, SC-89 SC-75 NTA4151P/D NTA4151PT1G NTE4151PT1G NTA4151P NTA4151PT1 NTE4151P NTE4151PT1

    Untitled

    Abstract: No abstract text available
    Text: NTA4151P, NTE4151P Small Signal MOSFET −20 V, −760 mA, Single P−Channel, Gate Zener, SC−75, SC−89 Features • • • • • http://onsemi.com Low RDS on for Higher Efficiency and Longer Battery Life Small Outline Package (1.6 x 1.6 mm) SC−75 Standard Gullwing Package


    Original     		PDF NTA4151P, NTE4151P NTA4151P/D

    SOT-353 MARKING VL

    Abstract: m74vhc1gt50dtt1g A114 A115 C101 JESD22 MC74VHC1GT50 marking 255 SC-70 M74VHC1GT50DFT1G
    Text: MC74VHC1GT50 Noninverting Buffer / CMOS Logic Level Shifter TTL−Compatible Inputs http://onsemi.com MARKING DIAGRAMS 1 SC−88A/SOT−353/SC−70 DF SUFFIX CASE 419A TTL−Compatible Inputs: VIL = 0.8 V; VIH = 2.0 V, VCC = 5 V 1 VL M G G 5 1 TSOP−5/SOT−23/SC−59


    Original     		PDF MC74VHC1GT50 SC-88A/SOT-353/SC-70 TSOP-5/SOT-23/SC-59 MC74VHC1GT50 MC74VHC1GT50/D SOT-353 MARKING VL m74vhc1gt50dtt1g A114 A115 C101 JESD22 marking 255 SC-70 M74VHC1GT50DFT1G

    Untitled

    Abstract: No abstract text available
    Text: MC74VHC1GT50 Noninverting Buffer / CMOS Logic Level Shifter TTL−Compatible Inputs http://onsemi.com MARKING DIAGRAMS 5 1 SC−88A / SOT−353 / SC−70 DF SUFFIX CASE 419A TTL−Compatible Inputs: VIL = 0.8 V; VIH = 2.0 V, VCC = 5 V 1 5 VL M G G 1 TSOP−5 / SOT−23 / SC−59


    Original     		PDF MC74VHC1GT50 MC74VHC1GT50 MC74VHC1GT50/D

    M74VHC1GT50DFT1G

    Abstract: m74vhc1gt50 M74VHC1GT50DTT1G
    Text: MC74VHC1GT50 Noninverting Buffer / CMOS Logic Level Shifter TTL−Compatible Inputs http://onsemi.com MARKING DIAGRAMS 5 1 SC−88A / SOT−353 / SC−70 DF SUFFIX CASE 419A TTL−Compatible Inputs: VIL = 0.8 V; VIH = 2.0 V, VCC = 5 V 1 5 VL M G G 1 TSOP−5 / SOT−23 / SC−59


    Original     		PDF MC74VHC1GT50 MC74VHC1GT50/D M74VHC1GT50DFT1G m74vhc1gt50 M74VHC1GT50DTT1G

    NLVVHC1G

    Abstract: No abstract text available
    Text: MC74VHC1GT125 Noninverting Buffer / CMOS Logic Level Shifter with LSTTL−Compatible Inputs http://onsemi.com MARKING DIAGRAMS 5 SC−88A / SOT−353 / SC−70 DF SUFFIX CASE 419A 5 W1 M G G 1 TSOP−5 / SOT−23 / SC−59 DT SUFFIX CASE 483 W1 M G High Speed: tPD = 3.5 ns Typ at VCC = 5 V


    Original     		PDF MC74VHC1GT125 MC74VHC1GT125/D NLVVHC1G

    Untitled

    Abstract: No abstract text available
    Text: NZL5V6AXV3T1 Series Preferred Devices Dual Common Anode ESD Protection Diodes SC−89 Package http://onsemi.com PIN 1. CATHODE 2. CATHODE 3. ANODE 1 MARKING DIAGRAM Specification Features: • SC−89 Package Allows Either Two Separate Unidirectional • •


    Original     		PDF SC-89

    5V6 PIN diode

    Abstract: No abstract text available
    Text: NZL5V6AXV3T1 Series Preferred Devices Dual Common Anode ESD Protection Diodes SC−89 Package http://onsemi.com PIN 1. CATHODE 2. CATHODE 3. ANODE 1 3 2 MARKING DIAGRAM Specification Features: • SC−89 Package Allows Either Two Separate Unidirectional •


    Original     		PDF SC-89 IEC61000-4-2 SC-89 5V6 PIN diode

    Untitled

    Abstract: No abstract text available
    Text: NZL5V6AXV3T1 Series Preferred Devices Dual Common Anode ESD Protection Diodes SC−89 Package http://onsemi.com PIN 1. CATHODE 2. CATHODE 3. ANODE 1 3 2 MARKING DIAGRAM Specification Features: • SC−89 Package Allows Either Two Separate Unidirectional •


    Original     		PDF SC-89 IEC61000-4-2 SC-89

    MSD42WT1G

    Abstract: MSD42T1G
    Text: MSD42WT1G, MSD42T1G NPN Silicon General Purpose High Voltage Transistors This NPN Silicon Planar Transistor is designed for general purpose amplifier applications. This device is housed in the SC-70/SOT-323 and SC−59 packages which are designed for low power surface


    Original     		PDF MSD42WT1G, MSD42T1G SC-70/SOT-323 SC-59 MSD42WT1/D MSD42WT1G MSD42T1G

    Untitled

    Abstract: No abstract text available
    Text: MSD42WT1G, MSD42T1G NPN Silicon General Purpose High Voltage Transistors This NPN Silicon Planar Transistor is designed for general purpose amplifier applications. This device is housed in the SC-70/SOT-323 and SC−59 packages which are designed for low power surface


    Original     		PDF MSD42WT1G, MSD42T1G SC-70/SOT-323 SC-59 MSD42WT1/D

    Untitled

    Abstract: No abstract text available
    Text: MSD42WT1G, MSD42T1G NPN Silicon General Purpose High Voltage Transistors This NPN Silicon Planar Transistor is designed for general purpose amplifier applications. This device is housed in the SC-70/SOT-323 and SC−59 packages which are designed for low power surface


    Original     		PDF MSD42WT1G, MSD42T1G SC-70/SOT-323 MSD42WT1/D

    NVA4153NT1G

    Abstract: No abstract text available
    Text: NTA4153N, NTE4153N, NVA4153N, NVE4153N Small Signal MOSFET 20 V, 915 mA, Single N−Channel with ESD Protection, SC−75 and SC−89 http://onsemi.com Features • • • • • Low RDS on Improving System Efficiency Low Threshold Voltage, 1.5 V Rated ESD Protected Gate


    Original     		PDF NTA4153N, NTE4153N, NVA4153N, NVE4153N NTA4153N/D NVA4153NT1G

    marking T92 SOT363

    Abstract: Marking code t92
    Text: NTJS3157N Trench Power MOSFET 20 V, 4.0 A, Single N−Channel, SC−88 Features • Leading Trench Technology for Low RDS ON Extending Battery Life • Fast Switching for Increased Circuit Efficiency • SC−88 Small Outline (2 x 2 mm) for Maximum Circuit Board


    Original     		PDF NTJS3157N SC-88 SC-88 SC-70-6 OT-363) NTJS3157N/D marking T92 SOT363 Marking code t92

    Dual N P-Channel mosfet sot-363

    Abstract: NTJD3158CT4G 419B-02 NTJD3158CT1G 50-18N
    Text: NTJD3158C Power MOSFET 20 V, +0.63/-0.82 A, SC-88 Complementary, ESD Protected Features •ăComplementary N- and P-Channel MOSFET •ăSmall Size Dual SC-88 Package •ăReduced Gate Charge to Improve Switching Response •ăIndependently Connected Devices to Provide Design Flexibility


    Original     		PDF NTJD3158C SC-88 SC-88 OT-363) NTJD3158C/D Dual N P-Channel mosfet sot-363 NTJD3158CT4G 419B-02 NTJD3158CT1G 50-18N

    SOT363 MARKING 3B

    Abstract: No abstract text available
    Text: BC856BDW1T1G, SBC856BDW1T1G Series, BC857BDW1T1G, SBC857BDW1T1G Series, BC858CDW1T1G Series Dual General Purpose Transistors http://onsemi.com PNP Duals SOT−363/SC−88 CASE 419B STYLE 1 These transistors are designed for general purpose amplifier applications. They are housed in the SOT−363/SC−88 which is


    Original     		PDF BC856BDW1T1G, SBC856BDW1T1GSeries, BC857BDW1T1G, SBC857BDW1T1GSeries, BC858CDW1T1G OT-363/SC-88 AEC-Q101 BC856, SBC856 SOT363 MARKING 3B

    Untitled

    Abstract: No abstract text available
    Text: NTJD3158C Power MOSFET 20 V, +0.63/-0.82 A, SC-88 Complementary, ESD Protected Features •ăComplementary N- and P-Channel MOSFET •ăSmall Size Dual SC-88 Package •ăReduced Gate Charge to Improve Switching Response •ăIndependently Connected Devices to Provide Design Flexibility


    Original     		PDF NTJD3158C SC-88 SC-88 OT-363) NTJD3158C/D