1SS272
Abstract: No abstract text available
Text: 1SS272 TOSHIBA Diode Silicon Epitaxial Planar Type 1SS272 Unit: mm Ultra High Speed Switching Application Small package : SC-61 Low forward voltage : VF 3 = 0.92V (typ.) Fast reverse recovery time : trr = 1.6ns (typ.) Small total capacitance : CT = 0.9pF (typ.)
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1SS272
SC-61
1SS272
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Untitled
Abstract: No abstract text available
Text: 1SS391 TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS391 Low Voltage High Speed Switching Unit: mm l Low forward voltage : VF 2 = 0.23V (typ.) @IF = 5mA l Small package : SC-61 Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit VRM
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1SS391
SC-61
100mA
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TOSHIBA DIODE
Abstract: 1SS319
Text: 1SS319 TOSHIBA Diode Silicon Epitaxial Planar Type 1SS319 Low Voltage High Speed Switching Unit: mm Low forward voltage : VF 3 = 0.54V (typ.) Low reverse current : IR = 5µA (max) Small package : SC-61 Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating
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1SS319
SC-61
TOSHIBA DIODE
1SS319
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1SS391
Abstract: No abstract text available
Text: 1SS391 TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS391 Low Voltage High Speed Switching Unit: mm Low forward voltage : VF 2 = 0.23V (typ.) @IF = 5mA Small package : SC-61 Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit VRM 15
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1SS391
SC-61
1SS391
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Untitled
Abstract: No abstract text available
Text: 1SS319 TOSHIBA Diode Silicon Epitaxial Planar Type 1SS319 Low Voltage High Speed Switching Unit in mm Low forward voltage : VF 3 = 0.54V (typ.) Low reverse current : IR = 5µA (max) Small package : SC-61 Maximum Ratings (Ta = 25°C) Characteristic Symbol
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1SS319
SC-61
013fied
961001EAA2'
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1SS391
Abstract: No abstract text available
Text: 1SS391 TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS391 Low Voltage High Speed Switching Unit: mm z Low forward voltage : VF 2 = 0.23V (typ.) @IF = 5mA z Small package : SC-61 Absolute Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating
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1SS391
SC-61
1SS391
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1SS391
Abstract: No abstract text available
Text: 1SS391 TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS391 Low Voltage High Speed Switching Unit: mm l Low forward voltage : VF 2 = 0.23V (typ.) @IF = 5mA l Small package : SC-61 Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit VRM
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1SS391
SC-61
1SS391
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Untitled
Abstract: No abstract text available
Text: 1SS272 TOSHIBA Diode Silicon Epitaxial Planar Type 1SS272 Ultra High Speed Switching Application Unit in mm Small package : SC-61 Low forward voltage : VF 3 = 0.92V (typ.) Fast reverse recovery time : trr = 1.6ns (typ.) Small total capacitance : CT = 0.9pF (typ.)
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1SS272
SC-61
961001EAA2'
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961001EAA2
Abstract: No abstract text available
Text: 1SS391 TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS391 Low Voltage High Speed Switching Unit in mm Low forward voltage : VF 2 = 0.23V (typ.) @IF = 5mA Small package : SC-61 Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit VRM 15
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1SS391
SC-61
961001EAA2'
961001EAA2
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1SS272
Abstract: No abstract text available
Text: 1SS272 TOSHIBA Diode Silicon Epitaxial Planar Type 1SS272 Unit: mm Ultra High Speed Switching Application z Small package : SC-61 z Low forward voltage : VF 3 = 0.92V (typ.) z Fast reverse recovery time : trr = 1.6ns (typ.) z Small total capacitance : CT = 0.9pF (typ.)
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1SS272
SC-61
1SS272
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Untitled
Abstract: No abstract text available
Text: 1SS272 TOSHIBA Diode Silicon Epitaxial Planar Type 1SS272 Unit: mm Ultra High Speed Switching Application l Small package : SC-61 l Low forward voltage : VF 3 = 0.92V (typ.) l Fast reverse recovery time : trr = 1.6ns (typ.) l Small total capacitance : CT = 0.9pF (typ.)
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1SS272
SC-61
100mA
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1SS272
Abstract: No abstract text available
Text: 1SS272 TOSHIBA Diode Silicon Epitaxial Planar Type 1SS272 Unit: mm Ultra High Speed Switching Application l Small package : SC-61 l Low forward voltage : VF 3 = 0.92V (typ.) l Fast reverse recovery time : trr = 1.6ns (typ.) l Small total capacitance : CT = 0.9pF (typ.)
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1SS272
SC-61
1SS272
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1SS319
Abstract: No abstract text available
Text: 1SS319 TOSHIBA Diode Silicon Epitaxial Planar Type 1SS319 Low Voltage High Speed Switching Unit: mm z Low forward voltage : VF 3 = 0.54V (typ.) z Low reverse current : IR = 5 A (max) z Small package : SC-61 Absolute Maximum Ratings (Ta = 25°C) Characteristic
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1SS319
SC-61
1SS319
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1SS319
Abstract: No abstract text available
Text: 1SS319 TOSHIBA Diode Silicon Epitaxial Planar Type 1SS319 Low Voltage High Speed Switching Unit: mm l Low forward voltage : VF 3 = 0.54V (typ.) l Low reverse current : IR = 5µA (max) l Small package : SC-61 Maximum Ratings (Ta = 25°C) Characteristic Symbol
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1SS319
SC-61
1SS319
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Untitled
Abstract: No abstract text available
Text: For Audio Equipment MN662710RA Signal Processing LSI for CD Players Overview Digital audio interface EIAJ format Audio data serial interface M Di ain sc te on na tin nc ue e/ d The MN662710RA is a CD signal processing LSI that, on a single chip, combines an optics servo for the CD
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MN662710RA
MN662710RA
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Untitled
Abstract: No abstract text available
Text: TOSHIBA 1SS272 TOSHIBA DIODE SILICON EPITAXIAL PLANAR TYPE WÊÊF • WÊÊF m Unit in mm ULTRA HIGH SPEED SWITCHING APPLICATIONS. Small Package Low Forward Voltage Fast Reverse Recovery Time Small Total Capacitance : SC-61 : Vjr 3 = 0.92V (Typ.) : tj* ^ 1.6ns (Typ.)
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1SS272
SC-61
SC-61
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Untitled
Abstract: No abstract text available
Text: 1SS272 TO SHIBA 1 SS272 TOSHIBA DIODE SILICON EPITAXIAL PLANAR TYPE Unit in mm ULTRA HIGH SPEED SWITCHING APPLICATIONS. • • • • Small Package Low Forward Voltage Fast Reverse Recovery Time Small Total Capacitance + 0.2 2 .9 -0-3 : SC-61 : Vp 3 = 0.92V (Typ.)
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1SS272
SS272
SC-61
961001EAA2'
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SS31 DIODE
Abstract: SS31
Text: 1SS319 T O SH IB A TOSHIBA DIODE 1 SS31 9 SILICON EPITAXIAL SCHOTTKY BARRIER TYPE Unit in mm LO W VOLTAGE HIGH SPEED SWITCHING. + 0.2 • • • 2.9 - 0.3 Low Forward Voltage : Vp 3 = 0.54V (Typ.) Low Reverse Current : Ir = 5,«A (Max.) Small Package : SC-61
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1SS319
SC-61
961001EAA2'
SS31 DIODE
SS31
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1SS319
Abstract: No abstract text available
Text: TOSHIBA 1SS319 TO SHIBA DIODE 1SS319 SILICON EPITAXIAL SCHOTTKY BARRIER TYPE Unit in mm LO W VOLTAGE HIGH SPEED SW ITCHING. + 0.2 • • • Low Forward Voltage : Vp 3 = 0.54V (Typ.) Low Reverse Current : Ir = 5/j A (Max.) Small Package : SC-61 Ln Ln «- p
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1SS319
SC-61
961001EAA2'
1SS319
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1SS391
Abstract: No abstract text available
Text: 1SS391 TOSHIBA TO SHIBA DIODE 1 SS391 SILICON EPITAXIAL SCHOTTKY BARRIER TYPE Unit in mm LO W VOLTAGE HIGH SPEED SW ITCHING • • Low Forward Voltage Small Package Ip = 5mA : VF 2) = 0.23V (Typ.) : SC-61 M A X IM U M RATINGS (Ta = 25°C) CHARACTERISTIC
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1SS391
SC-61
961001EAA2'
1SS391
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Untitled
Abstract: No abstract text available
Text: 1SS272 T O SH IB A 1 SS272 TOSHIBA DIODE SILICON EPITAXIAL PLANAR TYPE Unit in mm ULTRA HIGH SPEED SWITCHING APPLICATIONS. + 0.2 • • • • Small Package Low Forward Voltage Fast Reverse Recovery Time Small Total Capacitance 2 .9 -0-3 : SC-61 : Vp 3 = 0.92V (Typ.)
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1SS272
SS272
SC-61
961001EAA2'
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SS391
Abstract: No abstract text available
Text: T O SH IB A 1SS391 TOSHIBA DIODE 1 SS391 SILICON EPITAXIAL SCHOTTKY BARRIER TYPE Unit in mm LO W VOLTAGE HIGH SPEED SWITCHING • • Low Forward Voltage Small Package 2 = 0.23V (Typ.) @IF = 5mA : SC-61 : VF M A X IM U M RATINGS (Ta = 25°C) CHARACTERISTIC
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1SS391
SS391
SC-61
961001EAA2'
SS391
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Untitled
Abstract: No abstract text available
Text: T O SH IB A 1SS391 TOSHIBA DIODE 1 SS391 SILICON EPITAXIAL SCHOTTKY BARRIER TYPE Unit in mm LO W VOLTAGE HIGH SPEED SWITCHING • • Low Forward Voltage Small Package 2 = 0.23V (Typ.) @IF = 5mA : SC-61 : VF M A X IM U M RATINGS (Ta = 25°C) CHARACTERISTIC
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1SS391
SS391
SC-61
961001EAA2'
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Untitled
Abstract: No abstract text available
Text: 1SS319 T O S H IB A TO SHIBA DIODE SILICON EPITAXIAL SCHOTTKY BARRIER TYPE 1SS319 Unit in mm LO W VOLTAGE HIGH SPEED SW ITCHING. + 0.2 Low Forward Voltage : Vp 3 = 0.54V (Typ.) Low Reverse Current : I r = 5¿/A (Max.) Small Package : SC-61 1 .5 0 - 0 .1 5
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1SS319
SC-61
SC-61
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