TRANSISTOR c 547 B
Abstract: No abstract text available
Text: 30E D • 7^21237 00307Mb 0 ■ s g s -t h o m s o n [« ^ m itg T F G M flO S ^ 7# s G s“ thomson IR F K 6 H 150 N - CHANNEL ENHANCEMENT MODE _ POWER MOS TRANSISTOR MODULE ADVANCE DATA TYPE IR F K 6 H 1 5 0 V dss RDS on Id 100 V 0 .0 1 0 a
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00307Mb
O-240)
PC-029«
TRANSISTOR c 547 B
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transistor j237
Abstract: d 317 transistor
Text: 3DE ]> • 7^2^237 0030748 4 ■ ' T / 3 CM S 7 SGS-THOMSON ^ 7# IR F K 6 H 2 5 0 ^ s_ t h o m s o n N _ CHANNEL ENHANCEMENT MODE _ POWER MOS TRANSISTOR MODULE ADVANCE DATA TYPE IR FK 6H 250 V dss RDS{on Id 200 V 0.015 o 140 A . . . ■ _
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SC04720
O-240)
PC-029«
transistor j237
d 317 transistor
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Untitled
Abstract: No abstract text available
Text: 3QE » • 7 ^ 2 C 2 3 7 0D30734 H ■ ^ p 3 > °M £ fZ J SCS-THOMSON Ä 7# [M ^ m ie T T IM O tg S IR FK 4 H250 'T js S-THÖMSÖN N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR MODULE TYPE IR FK4H 250 V dss Ros on) Id 200 V 0 .02 1 Q 108 A . ■ . ■
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0D30734
SC04720
T-91-20
O-240)
PC-029«
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