Untitled
Abstract: No abstract text available
Text: STRH40P10 P-channel 100 V, 0.060 Ω, TO-254AA rad-hard low gate charge STripFET Power MOSFET Features VBDSS ID RDS on Qg 100 V 48 A 0.060 Ohm 162 nC • Fast switching ■ 100% avalanche tested ■ Hermetic package ■ 100 krad TID ■ SEE radiation hardened
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STRH40P10
O-254AA
SC06140p
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Untitled
Abstract: No abstract text available
Text: STRH40P10 Rad-Hard P-channel 100 V, 34 A Power MOSFET Datasheet - production data Features VBDSS ID RDS on Qg 100 V 34 A 0.060 Ohm 162 nC • Fast switching • 100% avalanche tested 3 1 • Hermetic package 2 • 100 krad TID TO-254AA • SEE radiation hardened
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STRH40P10
O-254AA
SC06140p
DocID18354
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PDF
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Untitled
Abstract: No abstract text available
Text: STRH40P10 Rad-Hard P-channel 100 V, 34 A Power MOSFET Datasheet - production data Features VBDSS ID RDS on Qg 100 V 34 A 0.060 Ohm 162 nC • Fast switching • 100% avalanche tested 3 1 • Hermetic package 2 • 100 krad TID TO-254AA • SEE radiation hardened
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STRH40P10
O-254AA
SC06140p
DocID18354
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STH180N10F3-2
Abstract: sth180n10f3 STH180N10
Text: STH180N10F3-2 N-channel 100 V, 3.9 mΩ, 180 A, H²PAK-2 STripFET III Power MOSFET Features Order codes VDSS RDS on max. ID STH180N10F3-2 100 V 4.5 mΩ 180 A • Ultra low on-resistance ■ 100% avalanche tested TAB 2 Applications ■ 3 1 H2PAK-2 High current switching applications
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STH180N10F3-2
SC06140
180N10F3
STH180N10Fin
STH180N10F3-2
sth180n10f3
STH180N10
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Untitled
Abstract: No abstract text available
Text: STRH40P10 Rad-Hard P-channel 100 V, 34 A Power MOSFET Datasheet - production data Features VBDSS ID RDS on Qg 100 V 34 A 0.060 Ohm 162 nC • Fast switching • 100% avalanche tested 3 1 • Hermetic package 2 • 100 krad TID TO-254AA • SEE radiation hardened
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Original
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STRH40P10
O-254AA
SC06140p
DocID18354
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PDF
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strh40p10
Abstract: STRH40P10HYG MIL-STD-750E STRH40P10HY1 STRH40P10H
Text: STRH40P10 Rad-Hard P-channel 100 V, 34 A Power MOSFET Datasheet — production data Features VBDSS ID RDS on Qg 100 V 34 A 0.060 Ohm 162 nC • Fast switching ■ 100% avalanche tested ■ Hermetic package ■ 100 krad TID ■ SEE radiation hardened 3 1 2
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Original
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STRH40P10
O-254AA
SC06140p
strh40p10
STRH40P10HYG
MIL-STD-750E
STRH40P10HY1
STRH40P10H
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PDF
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320N4F6
Abstract: STH320N4F6-2
Text: STH320N4F6-2, STH320N4F6-6 N-channel 40 V, 1.1 mΩ typ., 200 A, H²PAK-2, H²PAK-6 STripFET VI DeepGATE™ Power MOSFET Datasheet — production data Features Order codes STH320N4F6-2 STH320N4F6-6 VDS ID 1 RDS(on) max TAB 40 V 1.3 mΩ TAB 200 A 1. Current limited by package.
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STH320N4F6-2,
STH320N4F6-6
STH320N4F6-2
STH320N4F6-6
320N4F6
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PDF
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Untitled
Abstract: No abstract text available
Text: STRH40P10 Rad-Hard P-channel 100 V, 34 A Power MOSFET Features VBDSS ID RDS on Qg 100 V 34 A 0.060 Ohm 162 nC • Fast switching ■ 100% avalanche tested ■ Hermetic package ■ 100 krad TID ■ SEE radiation hardened 3 1 2 TO-254AA Applications ■ Satellite
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Original
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STRH40P10
O-254AA
SC06140p
STRH40P10HY1
STRH40P10Hy
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PDF
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Untitled
Abstract: No abstract text available
Text: STN3NE06 N - CHANNEL 60V - 0.08CI - 3A - SOT-223 STripFET POWER MOSFET TYP E STN 3N E06 • . . . . V dss 60 V R d S oii Id < 0 .1 0 0 Q. 3 A TYPICAL RDS(on) = 0.08 EXCEPTIONAL dv/dt CAPABILITY AVALANCHE RUGGED TECHNOLOGY 100 % AVALANCHE TESTED APPLICATION ORIENTED
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STN3NE06
OT-223
OT-223
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PDF
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Untitled
Abstract: No abstract text available
Text: SGS-THOMSON UJCTIfSiSffllKB STW16NA40 STH16NA40FI N - CHANNEL ENHANCEMENT MODE _ POWER MOS TRANSISTORS PRELIMINARY DATA TYPE Id 16 A 10 A aa 400 V 400V C O CO 6 o V V . . . . . RDS on V dss STW16NA40 STH16NA40FI TYPICAL RDs(on) = 0.21 ft AVALANCHE RUGGED TECHNOLOGY
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STW16NA40
STH16NA40FI
SC06140
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PDF
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Untitled
Abstract: No abstract text available
Text: STP7NB80 STP7NB80FP N - CHANNEL 800V - 1 .2£2 - 6.5A - TO-220/TO-220FP PowerMESH MOSFET TYPE STP7NB 80 STP7NB80FP • . . . . V dss R D S on Id 800 V 800 V < 1.5 n < 1.5 Q, 6.5 A 6.5 A TYPICAL RDS(on) = 1.2 £2 EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED
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OCR Scan
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STP7NB80
STP7NB80FP
O-220/TO-220FP
STP7NB80/FP
O-22QFP
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PDF
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Untitled
Abstract: No abstract text available
Text: SGS-THOMSON [MOigœilLiera *® STP2NA50 STP2NA50FI N - CHANNEL ENHANCEMENT MODE _ POWER MOS TRANSISTOR PRELIMINARY DATA TYPE V dss S TP2N A 50 STP2NA 50FI R d S oii 500 V 500 V < 4 a. < 4 0. Id 2 .8 A 2 A Cl • TYPICAL RüS(on) =3.25 ± 30V GATE TO SOURCE VOLTAGE RATING
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STP2NA50
STP2NA50FI
STP2NA50/FI
ATT220
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PDF
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Untitled
Abstract: No abstract text available
Text: STP5NC50 STP5NC50FP N - CHANNEL 500V -1.3 Q. - 5.5A TO-220/TO-220FP _ PowerMESH MOSFET P R ELIM IN ARY DATA TYPE S TP5N C 50 STP5NC 50FP • . . . . V dss RDS on Id 500 V 500 V < 1 .5 Q. < 1 .5 Q. 5.5 A 5.5 A TYPICAL RDS(on) = 1.3
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STP5NC50
STP5NC50FP
O-220/TO-220FP
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PDF
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Untitled
Abstract: No abstract text available
Text: S G S -T H O M S O N [M O ig œ ilL ie ra *® S T P 40 N 03 L -20 N - CHANNEL ENHANCEMENT MODE ’’ULTRA HIGH DENSITY” POWER MOS TRANSISTOR PRELIMINARY DATA TYP E V dss S T P 40N 03L-20 30 V R dS oii < 0.0 2 a . Id 40 A . TYPICAL RDs(on) = 0.016 £1
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03L-20
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PDF
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Untitled
Abstract: No abstract text available
Text: STW9NA80 STH9NA80FI N - CHANNEL 800V - 0.85ÎÎ - 9.1 A - TO-247/ISOWATT218 FAST POWER MOS TRANSISTOR TYPE S TW 9N A 80 S TH 9N A80FI • . . . . . . V dss R D S o n Id 800 V 800 V < 1 .o n < 1 .o n 9.1 A 5.9 A TYPICAL RDS(on) = 0.85 Î2 ± 30V GATE TO SOURCE VOLTAGE RATING
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STW9NA80
STH9NA80FI
O-247/ISOWATT218
A80FI
10WATT218
P025C
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PDF
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Untitled
Abstract: No abstract text available
Text: STW 6NB100 N - CHANNEL 1000V - 2.3Î1 - 5.4A - TO-247 PowerMESH MOSFET TYPE V dss S T W 6 N B 1 00 • . . . . . 1000 v R d S oii Id < 2 .8 Q. 5 .4 A TYPICAL R D S (on) = 2.3 EXTREMELY HIGH dv/dt CAPABILITY ± 30V GATE TO SOURCE VOLTAGE RATING 100% AVALANCHE TESTED
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6NB100
O-247
char00
O-247
P025P
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PDF
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Untitled
Abstract: No abstract text available
Text: S G S - T H O M S O N RfflDeiE!<s [l[L[ie,ü’[Ki@RDD S$ STP6NA60FP N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR PRELIMINARY DATA TYP E STP6NA60FP • . . . . . . V dss R d S( oii ) Id 600 V < 1.2 Q. 3 .9 A TYPICAL RDS(on) = 1 £2 ± 30V GATE TO SOURCE VOLTAGE RATING
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STP6NA60FP
O-22QFP
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PDF
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Untitled
Abstract: No abstract text available
Text: STW55NE10 N - CHANNEL 100V - 0.021 i l - 55A - T0247 STripFET POWER MOSFET TYPE S T W 5 5N E 1 0 . . . . . V dss 100 V R d S o Id ii < 0 .0 2 7 Q. 55 A TYPICAL R D S (on) = 0.021 £2 EXCEPTIONAL dv/dt CAPABILITY 100% AVALANCHE TESTED LOW GATE CHARGE AT 100 °C
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STW55NE10
T0247
P025P
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PDF
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Untitled
Abstract: No abstract text available
Text: STN2NF06 N - CHANNEL 60V - 0.120 - 2A - SOT-223 STripFET POWER MOSFET TYP E STN2N F06 V dss 60 V R d S oii Id < 0 .1 5 Q. 2 A . . TYPICAL RDs(on) =0.12 £2 EXCEPTIONAL dv/dt CAPABILITY . AVALANCHE RUGGED TECHNOLOGY . 100 % AVALANCHE TESTED . APPLICATION ORIENTED
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STN2NF06
OT-223
OT-223
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PDF
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3l4 diode
Abstract: No abstract text available
Text: STD5NB30 N - CHANNEL 300V - 0.75 n - 5A - DPAK PowerMESH MOSFET TYPE STD5NB30 • . . . . . V dss R dS oii Id 300 V < 0.9 Q. 5 A TYPICAL RDS(on) = 0.75 EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED VERY LOW INTRINSIC CAPACITANCES GATE CHARGE MINIMIZED
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STD5NB30
O-252
0068772-B
3l4 diode
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PDF
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STP80N03L-06
Abstract: No abstract text available
Text: S G S -T H O M S O N [M O ig œ ilL ie ra *® STP 80 N 03 L -06 N - CHANNEL ENHANCEMENT MODE ’’ULTRA HIGH DENSITY” POWER MOS TRANSISTOR TENTATIVE DATA TYP E V dss RDS on Id STP80N 03L-06 30 V < 0.006 Q. 80 A (*) • . . . . . . . TYPICAL RDS(on) = 0.005 £1
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STP80N03L-06
STP80N03L-06
O-220
P011C
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PDF
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Untitled
Abstract: No abstract text available
Text: Eu SGS-THOMSON STW8NA60 STH8NA60FI ilLiOTMOlêS N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR PRELIMINARY DATA TYPE V STW 8N A60 S TH 8N A60FI • . ■ > . . . dss 600 V 600 V R D S o n Id < 1 n < 1 fl 8 A 5 A TYPICAL RDS(on) = 0.92 Î2 ± 30V GATE TO SOURCE VOLTAGE RATING
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STW8NA60
STH8NA60FI
A60FI
7T2T237
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PDF
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Untitled
Abstract: No abstract text available
Text: S G S - T H O M S O N RfflDeiE!<s [l[L[ie,ü’[Ki@RDD S$ STP4NA60FP N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR PRELIMINARY DATA TYP E STP4NA60FP V dss RDS(on) Id 600 V < 2 .2 Q. 2.7 A • TYPICAL RDS(on) = 1-85 ± 30V GATE TO SOURCE VOLTAGE RATING
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STP4NA60FP
O-22QFP
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PDF
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transistor d 1557
Abstract: sc06140 TO-247 sc06140
Text: SGS-THOMSON M TO »« S TW 8 0 N06-10 N - CHANNEL ENHANCEMENT MODE "ULTRA HIGH DENSITY" POWER MOS TRANSISTOR PRELIMINARY DATA . • . . . . . . TYP E V dss RDS on Id STW 80N06-1 0 60 V < 0.010 Î2 80 A a TYPICAL R d s(oh ) = 0.0085 AVALANCHE RUGGED TECHNOLOGY
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N06-10
80N06-1
SC06140
transistor d 1557
sc06140 TO-247
sc06140
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PDF
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