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    SC13 THERMAL Search Results

    SC13 THERMAL Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TCTH011AE Toshiba Electronic Devices & Storage Corporation Over Temperature Detection IC / VDD=1.7~5.5V / IPTCO=1μA / IDD=1.8μA / Push-pull type Visit Toshiba Electronic Devices & Storage Corporation
    TCTH022AE Toshiba Electronic Devices & Storage Corporation Over Temperature Detection IC / VDD=1.7~5.5V / IPTCO=10μA / IDD=11.3μA / Push-pull type / FLAG signal latch function Visit Toshiba Electronic Devices & Storage Corporation
    TCTH021AE Toshiba Electronic Devices & Storage Corporation Over Temperature Detection IC / VDD=1.7~5.5V / IPTCO=10μA / IDD=11.3μA / Push-pull type Visit Toshiba Electronic Devices & Storage Corporation
    TCTH012BE Toshiba Electronic Devices & Storage Corporation Over Temperature Detection IC / VDD=1.7~5.5V / IPTCO=1μA / IDD=1.8μA / Open-drain type / FLAG signal latch function Visit Toshiba Electronic Devices & Storage Corporation
    TCTH012AE Toshiba Electronic Devices & Storage Corporation Over Temperature Detection IC / VDD=1.7~5.5V / IPTCO=1μA / IDD=1.8μA / Push-pull type / FLAG signal latch function Visit Toshiba Electronic Devices & Storage Corporation

    SC13 THERMAL Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    SC13 Thermal Philips Semiconductors Thermal considerations Original PDF

    SC13 THERMAL Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    BP317

    Abstract: MS-012AA PHP222 SC13
    Text: DISCRETE SEMICONDUCTORS DATA SHEET M3D315 PHP222 Dual P-channel enhancement mode MOS transistor Preliminary specification Supersedes data of 1998 Mar 24 File under Discrete Semiconductors, SC13 1998 Apr 01 Philips Semiconductors Preliminary specification Dual P-channel enhancement


    Original     		PDF M3D315 PHP222 OT96-1 SCA59 135108/00/03/pp8 BP317 MS-012AA PHP222 SC13

    fet array

    Abstract: E 212 fet PHN708 SC13 SSOP24 MDA790 SSOP24 209
    Text: DISCRETE SEMICONDUCTORS DATA SHEET PHN708 7 N-channel 80 mΩ FET array enhancement mode MOS transistors Product specification Supersedes data of 1997 Jun 19 File under Discrete Semiconductors, SC13 1998 Mar 17 Philips Semiconductors Product specification


    Original     		PDF PHN708 OT340-1 SSOP24) SCA57 135108/00/03/pp12 fet array E 212 fet PHN708 SC13 SSOP24 MDA790 SSOP24 209

    mda801

    Abstract: MDA804 MDA800 MDA806 PHN405 SC13 SSOP16 MDA802 MDA803 1g28
    Text: DISCRETE SEMICONDUCTORS DATA SHEET PHN405 4 N-channel 60 mΩ FET array enhancement mode MOS transistors Product specification Supersedes data of 1997 Jun 19 File under Discrete Semiconductors, SC13 1998 Mar 17 Philips Semiconductors Product specification


    Original     		PDF PHN405 OT338-1 SSOP16) SCA57 135108/00/03/pp12 mda801 MDA804 MDA800 MDA806 PHN405 SC13 SSOP16 MDA802 MDA803 1g28

    MOSFET IGBT THEORY AND APPLICATIONS

    Abstract: tv deflection theory PHILIPS MOSFET igbt BUK7508-55 equivalent SOT404 mosfet cross reference "Power Semiconductor" Philips igbt philips PHILIPS MOSFET PowerMos transistors TO220 package
    Text: DATA SHEET Introduction PowerMOS Transistors including TOPFETs and IGBTs 1996 Dec 12 Philips Semiconductors PowerMOS Transistors including TOPFETs and IGBTs Introduction therefore be identified easily as they have a 4 digit ‘type code’ after the BUK prefix.


    Original     		PDF BUK7508-55 MOSFET IGBT THEORY AND APPLICATIONS tv deflection theory PHILIPS MOSFET igbt BUK7508-55 equivalent SOT404 mosfet cross reference "Power Semiconductor" Philips igbt philips PHILIPS MOSFET PowerMos transistors TO220 package

    SDN8080G

    Abstract: SC2271 sc4052 SDN8080G-D sdn8080 sc78 LQFP100 QFP100 SC36 7 segmen
    Text: DATA SHEET SDN8080G 80-outputs common/segment driver To improve design and/or performance, Avant Electronics may make changes to its products. Please contact Avant Electronics for the latest versions of its products data sheet v6 2005 Sep 29 SDN8080G Avant Electronics


    Original     		PDF SDN8080G 80-outputs 80-outputs SDN8080G 80-COMMON 80-SEGMENT SC2271 sc4052 SDN8080G-D sdn8080 sc78 LQFP100 QFP100 SC36 7 segmen

    SC10 ntc

    Abstract: SC10-00504 SC10-005-04 SC10-00504 ntc SC10 00504 sc1000504 SC10-00505 2r512 SC13-00505 SC15010
    Text: EXPLANATION OF PART NUMBER ী ᇆᎅࣔ XX XX ABC DE X 1 Type ᣊী (2) (3) (4) к Ө Disc Diameter Resistance (25 ) ( (25 ) ( ) (mm) Ⴝᒌऴஉ ሽॴଖ к Ө 05=ӿ5 ABØ 10 Surge current 08=ӿ8 EX~ 103: 10 Ø 10 10=ӿ10 (5) (6) Current Resistance


    Original     		PDF SC08-00503MS SC10 ntc SC10-00504 SC10-005-04 SC10-00504 ntc SC10 00504 sc1000504 SC10-00505 2r512 SC13-00505 SC15010

    Untitled

    Abstract: No abstract text available
    Text: Atmel LED Drivers MSL3167/MSL3168 16-string, White LED Drivers with Adaptive Power Control, Simple PWM Dimming Interface, and Fault Handling Datasheet Brief Atmel LED Drivers-MSL3167/MSL3168 16-string, White LED Drivers with Adaptive Power Control, Simple PWM Dimming Interface, and Fault Handling


    Original     		PDF MSL3167/MSL3168 16-string, Drivers-MSL3167/MSL3168 DriversMSL3167 MSL3168 MSL3167/8. MSL3167/8

    MSL3167

    Abstract: STR12 STR14 White LED Drivers "White LED Drivers" Atmel 122 PWME
    Text: Atmel LED Drivers MSL3167/MSL3168 16-string, White LED Drivers with Adaptive Power Control, Simple PWM Dimming Interface, and Fault Handling Datasheet Brief Atmel LED Drivers-MSL3167/MSL3168 16-string, White LED Drivers with Adaptive Power Control, Simple PWM Dimming Interface, and Fault Handling


    Original     		PDF MSL3167/MSL3168 16-string, Drivers-MSL3167/MSL3168 DriversMSL3167 MSL3168 MSL3167/8. MSL3167/8 MSL3167 STR12 STR14 White LED Drivers "White LED Drivers" Atmel 122 PWME

    2100 ibz

    Abstract: DW11 Plus application
    Text: ISL12059 Low Cost and Low Power I2C Bus Real Time Clock/Calendar Data Sheet June 15, 2009 FN6757.0 Low Power and Low Cost RTC Features The ISL12059 device is a low power real time clock with clock/calendar, and 512Hz/digital output function. • Real Time Clock/Calendar


    Original     		PDF ISL12059 FN6757 ISL12059 512Hz/digital 768kHz 2100 ibz DW11 Plus application

    nelson sensor light

    Abstract: Widlar Yamatake PROXIMITY SENSORS AN-446A C1995 SC-15 Yamatake Corporation proximity sensor with metal detector block diagram R. J. Widlar and M. Yamatake, "A 150W op amp"
    Text: National Semiconductor Application Note 446A 446A February 1987 Robert J Widlar Apartado Postal 541 Puerto Vallarta Jalisco Mexico Mineo Yamatake National Semiconductor Corporation Santa Clara California Abstract Safe-area protection can be provided for a large


    Original     		PDF

    Widlar

    Abstract: lm12 op amp 150W TRANSISTOR AUDIO AMPLIFIER 800W TRANSISTOR npn 800w inverter AN-446B frederiksen Three-Five Widlar AN-21 LM12
    Text: National Semiconductor Application Note 446B April 1998 Robert J. Widlar Apartado Postal 541 steady-state conditions increases guaranteed power ratings by several times when compared to older techniques. At the same time, it dramatically lowers the peak junction temperature with worst-case fault conditions.


    Original     		PDF

    600W TRANSISTOR AUDIO AMPLIFIER

    Abstract: Widlar h9301 pnp 150w darlington transistor to3 package 800W TRANSISTOR npn 800w inverter AN-446B LM12 446B C1995
    Text: National Semiconductor Application Note 446B 446B October 1987 Robert J Widlar Apartado Postal 541 Puerto Vallarta Jalisco Mexico Mineo Yamatake National Semiconductor Corp Santa Clara California Abstract The standard junction-isolated power process has been modified by the addition of polycrystalline-film resistors to solve the topological problems encountered in


    Original     		PDF 01-percent 600W TRANSISTOR AUDIO AMPLIFIER Widlar h9301 pnp 150w darlington transistor to3 package 800W TRANSISTOR npn 800w inverter AN-446B LM12 446B C1995

    Widlar

    Abstract: AN009301-11 AN-446B 800W TRANSISTOR npn 446B LM12 150w darlington transistor to3 package 600W TRANSISTOR AUDIO AMPLIFIER
    Text: Robert J. Widlar Apartado Postal 541 steady-state conditions increases guaranteed power ratings by several times when compared to older techniques. At the same time, it dramatically lowers the peak junction temperature with worst-case fault conditions. Still


    Original     		PDF an009301 Widlar AN009301-11 AN-446B 800W TRANSISTOR npn 446B LM12 150w darlington transistor to3 package 600W TRANSISTOR AUDIO AMPLIFIER

    2100 ibz

    Abstract: YR20 MO20 DS1340 ISL12008 ISL12059 ISL12059IBZ ISL12059IBZ-T M41T00S TB347
    Text: ISL12059 Low Cost and Low Power I2C Bus Real Time Clock/Calendar Data Sheet June 15, 2009 FN6757.0 Low Power and Low Cost RTC Features The ISL12059 device is a low power real time clock with clock/calendar, and 512Hz/digital output function. • Real Time Clock/Calendar


    Original     		PDF ISL12059 FN6757 ISL12059 512Hz/digital 768kHz 512Hription 2100 ibz YR20 MO20 DS1340 ISL12008 ISL12059IBZ ISL12059IBZ-T M41T00S TB347

    Untitled

    Abstract: No abstract text available
    Text: DISC RETE S E M IC O N D U C TO R S InlEET PHN708 7 N-channel 80 m£2 FET array enhancement mode MOS transistors 1998 Mar 17 Product specification Supersedes data of 1997 Jun 19 File under Discrete Semiconductors, SC13 Philips Semiconductors PHILIPS PHILIPS


    OCR Scan     		PDF PHN708 SSOP24) 135108/00/03/pp12

    smd transistor GY

    Abstract: No abstract text available
    Text: DISC RETE S E M IC O N D U C TO R S [n]EE¥ BSH205 P-channel enhancement mode MOS transistor 1998 Apr 01 Preliminary specification Supersedes data of 1997 Jun 20 File under Discrete Semiconductors, SC13 Philips Semiconductors PHILIPS PHILIPS P h ilip s S e m i c o n d u c t o r s


    OCR Scan     		PDF BSH205 135108/00/02/pp8 smd transistor GY

    transistor ph 45

    Abstract: No abstract text available
    Text: DISC RETE S E M IC O N D U C TO R S [n]EE¥ BSH105 N-channel enhancement mode MOS transistor 1998 Mar 31 Preliminary specification Supersedes data of 1997 Jun 20 File under Discrete Semiconductors, SC13 Philips Semiconductors PHILIPS PHILIPS P h ilip s S e m ic o n d u c t o r s


    OCR Scan     		PDF BSH105 135108/00/02/pp8 transistor ph 45

    smd ya transistor

    Abstract: TRANSISTOR BO 344 BSH203 SMD TRANSISTOR qd
    Text: DISC RETE S E M IC O N D U C TO R S [n]EE¥ BSH203 P-channel enhancement mode MOS transistor 1998 Mar 31 Preliminary specification Supersedes data of 1997 Nov 26 File under Discrete Semiconductors, SC13 Philips Semiconductors PHILIPS PHILIPS P h ilip s S e m i c o n d u c t o r s


    OCR Scan     		PDF BSH203 135108/00/02/pp8 smd ya transistor TRANSISTOR BO 344 BSH203 SMD TRANSISTOR qd

    smd ya transistor

    Abstract: smd AYA
    Text: DISC RETE S E M IC O N D U C TO R S [n]EE¥ BSH206 P-channel enhancement mode MOS transistor Preliminary specification Supersedes data of 1997 Jun 20 File under Discrete Semiconductors, SC13 Philips Semiconductors 1998 Apr 01 PHILIPS PHILIPS P h ilip s S e m i c o n d u c t o r s


    OCR Scan     		PDF BSH206 OT363 135108/00/02/pp8 smd ya transistor smd AYA

    BGY41

    Abstract: BFW10 FET transistor CQY58 germanium RX101 equivalent components FET BFW10 bd643 bf199 283 to92 600a transistor zener phc
    Text: SMALL-SIGNAL FIELD-EFFECT TRANSISTORS page Selection guide N-channel junction field-effect transistors general purpose. for differential am plifiers.


    OCR Scan     		PDF LCD01 BGY41 BFW10 FET transistor CQY58 germanium RX101 equivalent components FET BFW10 bd643 bf199 283 to92 600a transistor zener phc

    Untitled

    Abstract: No abstract text available
    Text: SC-08 / ST-08 Thermally Conductive Silicone Caps & Tubes Thermally conductive silicone caps & tubes are available for the standard sized transistors such as T 0 _220, TO -247 or 3P & TO-264. Custom sizes are also available on request. The thermal conductive for these


    OCR Scan     		PDF SC-08 ST-08 O-264. ST-08-220S/R-A ST-08-247S/R-A ST-08-264S/R-A ST-08-DDDLLL-A -13-220S/R -13-247S/R -13-264S

    S0T426

    Abstract: No abstract text available
    Text: Philips Semiconductors PowerMOS Transistors including TOPFETs and IGBTs FEATURES Introduction All of the low voltage types up to 200 V in T0220AB outlines are now published with Tj(max) of 175 °C. This is possible since the lower R DS(on) value offsets the


    OCR Scan     		PDF T0220AB T0220, OT186A OT223 S0T426

    I1-I12

    Abstract: Fuji Electric
    Text: express p arty the t hi rd ard the nor used written for of the nay be n e it he r h e r ei n whatsaever Fuji the use Co .Ltd. of any without of copied, pr op er ty p ur po se s the reproduced, is for Electric «anufacturinç s hall information any They c o n s e nt


    OCR Scan     		PDF H04-004-03 I1-I12 Fuji Electric

    S0T426

    Abstract: INCOMING QUALITY PLANNING FORMAT
    Text: Philips Semiconductors PowerMOS transistors , ^ , . . . mn>- „ . Introduction including TOPFETs and IGBTs_ QUALITY Product conformance Total Quality Management The assurance of product conformance is an integral part of our quality assurance QA practice. This is achieved by:


    OCR Scan     		PDF IS09000 CDF-AEC-Q100 -Q101 QS9000 S0T426 INCOMING QUALITY PLANNING FORMAT