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    SC43B Search Results

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    SC43B Price and Stock

    Signal Transformer Inc SC43B-1R0

    FIXED IND 1UH 3.1A 48 MOHM SMD
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    Signal Transformer Inc SC43B-6R8

    FIXED IND 6.8UH 1.55A 131MOHM SM
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    Belden Inc SC43B-1R0

    Power Inductors - SMD Inductor SMD 1.0uH 2.56A 48mohms7.96MHz
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    Mouser Electronics SC43B-1R0
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    Belden Inc SC43B-1R8

    Power Inductors - SMD Inductor SMD 1.8uH 2.00A 63mohms7.96MHz
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    Belden Inc SC43B-2R7

    Power Inductors - SMD Inductor SMD 2.7uH 1.58A78mohms7.96MHz
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    SC43B Datasheets (22)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    SC43B-100 Signal Transformer Fixed Inductors, Inductors, Coils, Chokes, INDUCTOR SMD 10UH 0.84A 2.52MHZ Original PDF
    SC43B-120 Signal Transformer Fixed Inductors, Inductors, Coils, Chokes, INDUCTOR SMD 12UH 0.77A 2.52MHZ Original PDF
    SC43B-150 Signal Transformer Fixed Inductors, Inductors, Coils, Chokes, INDUCTOR SMD 15UH 0.69A 2.52MHZ Original PDF
    SC43B-180 Signal Transformer Fixed Inductors, Inductors, Coils, Chokes, INDUCTOR SMD 18UH 0.65A 2.52MHZ Original PDF
    SC43B-1R0 Signal Transformer Fixed Inductors, Inductors, Coils, Chokes, INDUCTOR SMD 1.0UH 2.56A 7.96MHZ Original PDF
    SC43B-1R4 Signal Transformer Fixed Inductors, Inductors, Coils, Chokes, INDUCTOR SMD 1.4UH 2.20A 7.96MHZ Original PDF
    SC43B-1R8 Signal Transformer Fixed Inductors, Inductors, Coils, Chokes, INDUCTOR SMD 1.8UH 2.00A 7.96MHZ Original PDF
    SC43B-220 Signal Transformer Fixed Inductors, Inductors, Coils, Chokes, INDUCTOR SMD 22UH 0.58A 2.52MHZ Original PDF
    SC43B-270 Signal Transformer Fixed Inductors, Inductors, Coils, Chokes, INDUCTOR SMD 27UH 0.52A 2.52MHZ Original PDF
    SC43B-2R2 Signal Transformer Fixed Inductors, Inductors, Coils, Chokes, INDUCTOR SMD 2.2UH 1.75A 7.96MHZ Original PDF
    SC43B-2R7 Signal Transformer Fixed Inductors, Inductors, Coils, Chokes, INDUCTOR SMD 2.7UH 1.58A 7.96MHZ Original PDF
    SC43B-330 Signal Transformer Fixed Inductors, Inductors, Coils, Chokes, INDUCTOR SMD 33UH 0.48A 2.52MHZ Original PDF
    SC43B-390 Signal Transformer Fixed Inductors, Inductors, Coils, Chokes, INDUCTOR SMD 39UH 0.42A 2.52MHZ Original PDF
    SC43B-3R3 Signal Transformer Fixed Inductors, Inductors, Coils, Chokes, INDUCTOR SMD 3.3UH 1.44A 7.96MHZ Original PDF
    SC43B-3R9 Signal Transformer Fixed Inductors, Inductors, Coils, Chokes, INDUCTOR SMD 3.9UH 1.33A 7.96MHZ Original PDF
    SC43B-470 Signal Transformer Fixed Inductors, Inductors, Coils, Chokes, INDUCTOR SMD 47UH 0.39A 2.52MHZ Original PDF
    SC43B-4R7 Signal Transformer Fixed Inductors, Inductors, Coils, Chokes, INDUCTOR SMD 4.7UH 1.22A 7.96MHZ Original PDF
    SC43B-560 Signal Transformer Fixed Inductors, Inductors, Coils, Chokes, INDUCTOR SMD 56UH 0.35A 2.52MHZ Original PDF
    SC43B-5R6 Signal Transformer Fixed Inductors, Inductors, Coils, Chokes, INDUCTOR SMD 5.6UH 1.15A 7.96MHZ Original PDF
    SC43B-680 Signal Transformer Fixed Inductors, Inductors, Coils, Chokes, INDUCTOR SMD 68UH 0.33A 2.52MHZ Original PDF

    SC43B Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: SC43B SMD POWER INDUCTORS MARKING ● Features 1. Open frame construction 2 Excellent Power Density 3 Engineered to Provide High Efficiency ELECTRICAL CHARACTERISTICS DC Resistance Ω MAX (2) (1) Saturation(3) Temperature (4) Current Current (A) (A) SC43B-1R0


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    SC43B 96MHZ SC43B-1R8 SC43B-2R2 SC43B-2R7 SC43B-3R3 PDF

    Untitled

    Abstract: No abstract text available
    Text: SC43B SMD POWER INDUCTORS MARKING Features 1. Open frame construction 2 Excellent Power Density 3 Engineered to Provide High Efficiency ELECTRICAL CHARACTERISTICS DC Resistance MAX (2) (1) Saturation(3) Temperature (4) Current Current (A) (A) SC43B-1R0


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    SC43B 96MHZ SC43B-1R8 SC43B-2R2 SC43B-2R7 SC43B-3R3 PDF

    2SC3355

    Abstract: transistor 2sc3355 and application PA33 marking PA33
    Text: DATA SHEET SHEET DATA SILICON TRANSISTOR 2SC3355 HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR DESCRIPTION The 2SC3355 is an NPN silicon epitaxial transistor designed for low noise amplifier at VHF, UHF and CATV band. PACKAGE DIMENSIONS


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    2SC3355 2SC3355 transistor 2sc3355 and application PA33 marking PA33 PDF

    PA33

    Abstract: No abstract text available
    Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid


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    2SA733

    Abstract: 2SA733 Q equivalent PA33 transistor 2sa733 ALL 2sa733
    Text: DATA SHEET PNP SILICON TRANSISTOR 2SA733 PNP SILICON TRANSISTOR DESCRIPTION PACKAGE DRAWING Unit: mm The 2SA733 is designed for use in diver stage of AF amplifier. φ 5.2 MAX. FEATURES 5.5 MAX. • High hFE and Excellent Linearity: 200 TYP. hFE (VCE = −6.0 V, IC = −1.0 mA)


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    2SA733 2SA733 2SA733 Q equivalent PA33 transistor 2sa733 ALL 2sa733 PDF

    nec ap1l2q

    Abstract: PA33
    Text: DATA SHEET COMPOUND TRANSISTOR AP1 SERIES on-chip resistor NPN silicon epitaxial transistor For mid-speed switching PACKAGE DRAWING UNIT: mm FEATURES • Current drive available up to 0.7 A • On-chip bias resistor • Low power consumption during drive


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    SC-43B nec ap1l2q PA33 PDF

    marking PA33

    Abstract: 2SC3582 PA33
    Text: DATA SHEET SHEET DATA SILICON TRANSISTOR 2SC3582 MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR DESCRIPTION The 2SC3582 is an NPN epitaxial silicon transistor designed for use in PACKAFE DIMENSIONS in millimeters inches low-noise and small signal amplifiers from VHF band to UHF band. Low-


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    2SC3582 2SC3582 marking PA33 PA33 PDF

    PA33

    Abstract: No abstract text available
    Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid


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    PDF

    2SC945 typical application

    Abstract: 2sc945 TRANSISTOR 2Sc945 2SC945 Q equivalent Contact Electronics Equivalent to transistor 2sc945 how to check ic ship 2SC945 DATASHEET 2Sc945 equivalent PA33
    Text: DATA SHEET NPN SILICON TRANSISTOR 2SC945 NPN SILICON TRANSISTOR DESCRIPTION The 2SC945 is designed for use in driver stage of AF amplifier and low speed switching. PACKAGE DRAWING Unit: mm φ 5.2 MAX. 5.5 MAX. FEATURES 12.7 MIN. • High voltage LVCEO = 50 V MIN.


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    2SC945 2SC945 2SC945 typical application TRANSISTOR 2Sc945 2SC945 Q equivalent Contact Electronics Equivalent to transistor 2sc945 how to check ic ship 2SC945 DATASHEET 2Sc945 equivalent PA33 PDF

    transistor 2sc3355 and application

    Abstract: 2sc3355 2SC3355, npn
    Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid


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    PU10208EJ01V0DS 2SC3355 transistor 2sc3355 and application 2sc3355 2SC3355, npn PDF

    marking PA33

    Abstract: No abstract text available
    Text: DATA SHEET NPN SILICON RF TRANSISTOR 2SC3582 NPN EPITAXIAL SILICON RF TRANSISTOR FOR MICROWAVE LOW-NOISE AMPLIFICATION DESCRIPTION The 2SC3582 is an NPN epitaxial silicon transistor designed for use in low-noise and small signal amplifiers from VHF band to UHF band. Low-noise figure, high gain, and high current capability achieve a very wide dynamic range


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    2SC3582 2SC3582 2SC3582-T PU10210EJ01V0DS marking PA33 PDF

    nec ap1l2q

    Abstract: PA33
    Text: DATA SHEET COMPOUND TRANSISTOR AP1 SERIES on-chip resistor NPN silicon epitaxial transistor For mid-speed switching PACKAGE DRAWING UNIT: mm FEATURES • Current drive available up to 0.7 A • On-chip bias resistor • Low power consumption during drive


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    SC-43B nec ap1l2q PA33 PDF

    2SA992 equivalent transistor

    Abstract: 2SC1845 equivalent 2SA992 2SA992 equivalent 2sc 5060 2SC1845 PA33 transistor 2SC1845
    Text: /VEC 1 ? '> i > h ^ > x ^ 2SA992 P # z S ilico n T r a n s is to r / \ 'T 7 t y N P x b ° ^ 4 i '> 7 V U f l2 '> «; 3 > h ^ ^ W-MM i t 0 [§ i| & f f iX f U ^ i7 3 > i I- u — i \ , y y v “i;x f iW if c if f l, t O iItjÉ 'I'S :, L ' 7 — T ‘ M i/'. : m m )


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    100kQ 2SC1845 SC-43B 2SA992 equivalent transistor 2SC1845 equivalent 2SA992 2SA992 equivalent 2sc 5060 PA33 transistor 2SC1845 PDF

    PJA 0836

    Abstract: PJA 0849 PA33 T108 T46C TC61 PJA+0849 1/serial/PJA 0836
    Text: Î & # 3Æ F*3 J & P N P x 'J = i> ^ - f ì ’ mm i t *<4 o 7 x t £ i / t £ l * I ü L T v ' â - fc ( R i — 47 k û ) t oAA1L4Z 3 > r 9 g y > >J T - I Î f f l T - ë É 1 “ 0 ( T a = 25 °C ) I l a v 9 9 z i v 9 9 - ^ - 1 ^ ì • -< — 9 -y B&


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    Cycled50 SC-43B PJA 0836 PJA 0849 PA33 T108 T46C TC61 PJA+0849 1/serial/PJA 0836 PDF

    FZ 300 R 06 KL

    Abstract: 2SC2901 PA33 W155
    Text: NEC j ix r x Silicon T ra n sisto r A 2SC2901 N P N X h ° 9 * ' > 7 J U M V □ ' > > b = 7 9 jim m NPN Silicon Epitaxial Transistor High Speed Switching Industrial Use nm U n it: mm O x -i ¿ ‘' i S t 'o -y - f - > t o ff: 12 n s 3 ^ t On-8.0 n s 3 ; t e M


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    2SC2901 O2SA1206Ã CycleS50 SC-43B 11E-Km 00---------in FZ 300 R 06 KL 2SC2901 PA33 W155 PDF

    2SA954

    Abstract: nec transistor 2sa954
    Text: NEC D E S C R IP T IO N PNP SILICON TRANSISTOR 2SA954 The 2SA954 is designed for use in driver stage of high voltage P A C K A G E D IM E N S IO N S audio equipment. in millimeters inches 5.2 MAX. FEATURES • High total power dissipation. P j = 600 mW • High hpE and high voltage.


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    2SA954 2SA954 nec transistor 2sa954 PDF

    transistor 2sc1841

    Abstract: 2SC1841 PA33 to92 af power amplifier "low speed switching transistor"
    Text: NEC DESCRIPTION NPN SILICON TRANSISTOR 2SC1841 The 2SC1841 is designed for use in AF amplifier, driver and low speed switching. PACKAGE DIMENSIONS in millimeters inches 5.2 MAX. FEATURES • High Voltage V CE0 : 120 V • High hFE hFE : 600 TYP. (V Ce = 6.0 V, lc = 1.0 mA)


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    2SC1841 2SC1841 transistor 2sc1841 PA33 to92 af power amplifier "low speed switching transistor" PDF

    2SA990

    Abstract: PA33
    Text: NEC D E S C R IP TIO N PNP SILICON TRANSISTOR 2SA990 The 2SA 990 is designed for use in driver stage of A F amplifier. PACKAG E D IM E N S IO N S FEATURE • High hF E . in m illim ete rs inches h FE : 40 0 T YP. (V CE = - 6 . 0 V , !c = - 1 . 0 mA) 5 .2 M A X .


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    2SA990 2SA990 SX10-ht. PA33 PDF

    2SA1152

    Abstract: 2SA-1152 2sc2719 ILI9331 M10565 2sa115 1S955 PA33 ci 740
    Text: '> 2 ? Silicon Transistor I z i > h SA 7 > > X 1152 =5 %m ti a j: &+ iSJ$ x -i y=f-> y m n QM M » # f£ ^ mm) < fà iìF P .T t* P t = 600 mW o 2 SC 2 7 1 9 1 5.2 MAX. V Ce o = - 8 0 V =>> 7 °') / > 9 ') T 'i i f f l 'C 'è t t a ( T a —25 °C ) m


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    2SA1152 2SC27191 PWS10 Cycled50 SC-43B v0776 2SA1152 2SA-1152 2sc2719 ILI9331 M10565 2sa115 1S955 PA33 ci 740 PDF

    PA33

    Abstract: AN1A4P "transistor equivalent"
    Text: NEC D ESCRIPTIO N PNP SILICON TRANSISTOR AN1A4P The AN1A4P is designed for use in medium speed switching P A C K A G E DIM ENSIONS circuit. FEA TU R E in m illim eters inches 5.2 MAX. (0.204 MAX.) • Bias resistors built-in type PNP transistor equivalent circuit.


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    PDF

    2SA1206

    Abstract: 2SA1206 transistor 2sa 1206 PA33
    Text: NEC PNP SILICON TRANSISTOR 2SA1206 DESCRIPTION The 2SA1206 is designed for general purpose amplifier and high PACKAGE DIMENSIONS speed switching applications. in millimeters inches FEATURES • High Frequency Current Gain. • High Speed Switching. • Small Output Capacitance.


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    2SA1206 2SA1206 2SA1206 transistor 2sa 1206 PA33 PDF

    2SK679

    Abstract: PA33 SC-43B
    Text: 6427525 N E C N E C E L E C T R O N IC S IN C _ ?8D 18862 EL EC TRONICS INC ^ D T- ¿S'-If lir*. v' _D E J b 4 5 7 S a S DOlflfltiS 0 N-CHANNEL MOS FIELD EFFECT POWER TRANSISTOR 2SK679 FEA TU R ES • Suitable for switching power supplies, actuater controls,


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    DEJb457SaS 2SK679 2SK679 PA33 SC-43B PDF

    H1P transistor

    Abstract: 2SC1843 transistor 2sc1843 PA33 Scans-005445 IC H1P Gv-80
    Text: NPN SILICON TRANSISTOR 2SC1843 D E S C R IP TIO N The 2SC1843 is designed fo r use in an A F a m p lifie r o f low level low PACKAG E D IM E N S IO N S noise and general purpose. in m illim ete rs inches FEATURES • H i g h h FE. h FE : 400 TYP. (V Ce = 6.0 V, l c = 1.0 m A )


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    2SC1843 2SC1843 10Hzto H1P transistor transistor 2sc1843 PA33 Scans-005445 IC H1P Gv-80 PDF

    transistor 2sa988

    Abstract: 2SA988 2sa988 transistor PA33 VCE-60
    Text: NEC DESCRIPTION PNP SILICON TRANSISTOR 2SA988 The 2SA988 is designed for use in driver stage of AF amplifier. PACKAGE DIMENSIONS in millimeters inches FEATURES • High Voltage. V ceo : ~120 V • Low Output Capacitance. C0b : 2.0 pF TYP. (V cb = ~ 3 0 V)


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    2SA988 2SA988 transistor 2sa988 2sa988 transistor PA33 VCE-60 PDF