Untitled
Abstract: No abstract text available
Text: SN74LVC1G32-EP SINGLE 2-INPUT POSITIVE-OR GATE www.ti.com SCES458A – DECEMBER 2003 – REVISED NOVEMBER 2005 FEATURES • • • • • • • 1 • • • Controlled Baseline – One Assembly/Test Site, One Fabrication Site Enhanced Diminishing Manufacturing
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SN74LVC1G32-EP
SCES458A
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Untitled
Abstract: No abstract text available
Text: SN74LVC1G32-EP SINGLE 2-INPUT POSITIVE-OR GATE www.ti.com SCES458A – DECEMBER 2003 – REVISED NOVEMBER 2005 FEATURES • • • • • • • 1 • • • Controlled Baseline – One Assembly/Test Site, One Fabrication Site Enhanced Diminishing Manufacturing
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SN74LVC1G32-EP
SCES458A
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Untitled
Abstract: No abstract text available
Text: SN74LVC1G32ĆEP SINGLE 2ĆINPUT POSITIVEĆOR GATE SCES458A − DECEMBER 2003 − REVISED MAY 2004 D Controlled Baseline D D D D D D D Low Power Consumption, 10-µA Max ICC D ±24-mA Output Drive at 3.3 V D Ioff Supports Partial-Power-Down Mode − One Assembly/Test Site, One Fabrication
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SN74LVC1G32EP
SCES458A
24-mA
000-V
A114-A)
A115-A)
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A115-A
Abstract: C101 sb marking
Text: SN74LVC1G32-EP SINGLE 2-INPUT POSITIVE-OR GATE www.ti.com SCES458A – DECEMBER 2003 – REVISED NOVEMBER 2005 FEATURES • • • • • • • 1 • • • Controlled Baseline – One Assembly/Test Site, One Fabrication Site Enhanced Diminishing Manufacturing
|
Original
|
PDF
|
SN74LVC1G32-EP
SCES458A
24-mA
000-V
A114-A)
A115-A)
A115-A
C101
sb marking
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