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    SCHOTTKY 1N Search Results

    SCHOTTKY 1N Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    CUHS20S60 Toshiba Electronic Devices & Storage Corporation Schottky Barrier Diode (SBD), 60 V, 2.0 A, US2H Visit Toshiba Electronic Devices & Storage Corporation
    CUHS20F60 Toshiba Electronic Devices & Storage Corporation Schottky Barrier Diode (SBD), 60 V, 2.0 A, US2H Visit Toshiba Electronic Devices & Storage Corporation
    CUHS15S60 Toshiba Electronic Devices & Storage Corporation Schottky Barrier Diode (SBD), 60 V, 1.5 A, US2H Visit Toshiba Electronic Devices & Storage Corporation
    CUHS15F60 Toshiba Electronic Devices & Storage Corporation Schottky Barrier Diode (SBD), 60 V, 1.5 A, US2H Visit Toshiba Electronic Devices & Storage Corporation
    TRS8E65H Toshiba Electronic Devices & Storage Corporation SiC Schottky Barrier Diode (SBD), 650 V, 8 A, TO-220-2L Visit Toshiba Electronic Devices & Storage Corporation

    SCHOTTKY 1N Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    1N5712 spice

    Abstract: 1N5711 spice 1N5712 1N5711 5082-2804 2800-Series 5082-2811 RS-296-D
    Text: Products > RF ICs/Discretes > Schottky Diodes > Axial Glass Packaged > 1N5711 1N5711 Low 1/f noise general purpose Schottky diode Description Lifecycle status: Active Features The 1N5711 and 1N5712 are passivated Schottky barrier diodes which use a patented


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    PDF 1N5711 1N5711 1N5712 1N5711, 1N5712, 5082-xxxx 5082xxxx 1N5712 spice 1N5711 spice 5082-2804 2800-Series 5082-2811 RS-296-D

    1N5825

    Abstract: No abstract text available
    Text: 1N5825 5 Amp Schottky Rectifier 16.75 Diodes Schottky Rectifiers General Purpose Am. Page 1 of 1 Enter Your Part # Home Part Number: 1N5825 Online Store 1N5825 Diodes 5 Amp Schottky Rectifier Transistors Enter code INTER3 at checkout.* Integrated Circuits


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    PDF 1N5825 1N5825 com/1n5825

    1N5823

    Abstract: No abstract text available
    Text: 1N5823 5 Amp Schottky Rectifier 12.75 Diodes Schottky Rectifiers General Purpose Am. Page 1 of 1 Enter Your Part # Home Part Number: 1N5823 Online Store 1N5823 Diodes 5 Amp Schottky Rectifier Transistors Enter code INTER3 at checkout.* Integrated Circuits


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    PDF 1N5823 1N5823 com/1n5823

    Untitled

    Abstract: No abstract text available
    Text: MOSPEC 1N5820M Thru 1N5822M Schottky Barrier Rectifiers SCHOTTKY BARRIER RECTIFIERS Using the Schottky Barrier principle with a Molybdenum barrier metal. These state-of-the-art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high


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    PDF 1N5820M 1N5822M 1N5820M 1N5821M-1N5822M

    Untitled

    Abstract: No abstract text available
    Text: MOSPEC 1N5820M Thru 1N5822M Schottky Barrier Rectifiers SCHOTTKY BARRIER RECTIFIERS Using the Schottky Barrier principle with a Molybdenum barrier metal. These state-of-the-art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high


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    PDF 1N5820M 1N5822M 1N5820M 1N5821M-1N5822M

    1N5817

    Abstract: datasheets diode 1n5818 1N5818 1N5819
    Text: MOSPEC 1N5817 thru 1N5819 Schottky Barrier Rectifiers SCHOTTKY BARRIER RECTIFIERS Using the Schottky Barrier principle with a Molybdenum barrier metal. These state-of-the-art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high


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    PDF 1N5817 1N5819 1N5817 1N5818-1N5819 datasheets diode 1n5818 1N5818 1N5819

    schottky

    Abstract: No abstract text available
    Text: MOSPEC 1N5817 thru 1N5819 Schottky Barrier Rectifiers SCHOTTKY BARRIER RECTIFIERS Using the Schottky Barrier principle with a Molybdenum barrier metal. These state-of-the-art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high


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    PDF 1N5817 1N5819 1N5817 1N5818-1N5819 schottky

    1N5820

    Abstract: 1N5821 1N5822
    Text: MOSPEC 1N5820 Thru 1N5822 Schottky Barrier Rectifiers SCHOTTKY BARRIER RECTIFIERS Using the Schottky Barrier principle with a Molybdenum barrier metal. These state-of-the-art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high


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    PDF 1N5820 1N5822 Clas210 1N5820 1N5821-1N5822 1N5821 1N5822

    Untitled

    Abstract: No abstract text available
    Text: MOSPEC 1N5817 thru 1N5819 Schottky Barrier Rectifiers SCHOTTKY BARRIER RECTIFIERS Using the Schottky Barrier principle with a Molybdenum barrier metal. These state-of-the-art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high


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    PDF 1N5817 1N5819 1N5817 1N5818-1N5819

    1N5820

    Abstract: 1N5822 1N5822 data sheet 1n5822 datasheet 1N5822 diode data 1N5821 1N5821-1N5822
    Text: MOSPEC 1N5820 Thru 1N5822 Schottky Barrier Rectifiers SCHOTTKY BARRIER RECTIFIERS Using the Schottky Barrier principle with a Molybdenum barrier metal. These state-of-the-art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high


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    PDF 1N5820 1N5822 1N5820 1N5821-1N5822 1N5822 1N5822 data sheet 1n5822 datasheet 1N5822 diode data 1N5821 1N5821-1N5822

    1N5817

    Abstract: 1N5819 datasheets diode 1n5818 1N5818 5 Amp Schottky Barrier Rectifier 200 Volts
    Text: MOSPEC 1N5817 Thru 1N5819 Schottky Barrier Rectifiers SCHOTTKY BARRIER RECTIFIERS Using the Schottky Barrier principle with a Molybdenum barrier metal. These state-of-the-art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high


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    PDF 1N5817 1N5819 1N5817 1N5818-1N5819 1N5819 datasheets diode 1n5818 1N5818 5 Amp Schottky Barrier Rectifier 200 Volts

    Untitled

    Abstract: No abstract text available
    Text: MOSPEC 1N5820 Thru 1N5822 Schottky Barrier Rectifiers SCHOTTKY BARRIER RECTIFIERS Using the Schottky Barrier principle with a Molybdenum barrier metal. These state-of-the-art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high


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    PDF 1N5820 1N5822 1N5820 1N5821-1N5822

    m-pulse tunnel diode

    Abstract: Mp2407 MP4033 MP2923 M-PULSE
    Text: Microwave Table of Contents DIODES Mircowave Schottky Diodes . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 Zero bias Schottky Diodes . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3


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    1n5819 trr

    Abstract: 1N5817 1N5818 1N5819 1n5817 trr Schottky Barrier Rectifiers
    Text: Home | Profile | Designer Kits | Products | Applications | Catalog | Contact Us | Event Calendar | Terms & Conditions Product Catalog > Diodes > Schottky Barrier Rectifiers > Part Number 1N5819 product family SCHOTTKY BARRIER RECTIFIERS package type DO-41


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    PDF 1N5819 DO-41 50K/Ctn 20K/Ctn; 50K/Ctn. 1N5817 1n5819 trr 1N5817 1N5818 1N5819 1n5817 trr Schottky Barrier Rectifiers

    1n7058ccu3

    Abstract: JANS1N7058CCU3 1n7058 30CLJQ150 JANTX1N7058CCU3 JANTXV1N7058CCU3 1N705
    Text: PD-93950C 30CLJQ150 JANS1N7058CCU3 JANTX1N7058CCU3 JANTXV1N7058CCU3 SCHOTTKY RECTIFIER HIGH EFFICIENCY SERIES 30Amp, 150V Ref: MIL-PRF-19500/731 Major Ratings and Characteristics Description/Features The 1N7058CCU3 center tap Schottky rectifier has Characteristics


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    PDF PD-93950C 30CLJQ150 JANS1N7058CCU3 JANTX1N7058CCU3 JANTXV1N7058CCU3 30Amp, MIL-PRF-19500/731 1N7058CCU3 130Max. JANS1N7058CCU3 1n7058 30CLJQ150 JANTX1N7058CCU3 JANTXV1N7058CCU3 1N705

    JANS1N7064CCU3

    Abstract: 1n7064 1N7064CCU3 SMD05 1N706
    Text: PD-94304D 30CLJQ045 JANS1N7064CCU3 JANTX1N7064CCU3 JANTXV1N7064CCU3 SCHOTTKY RECTIFIER HIGH EFFICIENCY SERIES 30Amp, 45V Ref: MIL-PRF-19500/754 Major Ratings and Characteristics Description/Features Characteristics The 1N7064CCU3 center tap Schottky rectifier has


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    PDF PD-94304D 30CLJQ045 JANS1N7064CCU3 JANTX1N7064CCU3 JANTXV1N7064CCU3 30Amp, MIL-PRF-19500/754 30Apk, 1N7064CCU3 1n7064 SMD05 1N706

    MIL-PRF-19500/730

    Abstract: No abstract text available
    Text: PD-20351G 15CLQ100 JANS1N7037CCU1 JANTX1N7037CCU1 JANTXV1N7037CCU1 SCHOTTKY RECTIFIER HIGH EFFICIENCY SERIES 35A, 100V Ref: MIL-PRF-19500/730 Major Ratings and Characteristics Description/Features Characteristics The 1N7037CCU1 center tap Schottky rectifier has


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    PDF PD-20351G 15CLQ100 JANS1N7037CCU1 JANTX1N7037CCU1 JANTXV1N7037CCU1 MIL-PRF-19500/730 1N7037CCU1 MIL-PRF-19500 MIL-PRF-19500/730

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    Abstract: No abstract text available
    Text: PD-97554 22JGQ045 JANS1N6660CAT1 JANTX1N6660CAT1 JANTXV1N6660CAT1 SCHOTTKY RECTIFIER HIGH EFFICIENCY SERIES 30A, 45V Ref: MIL-PRF-19500/608 Major Ratings and Characteristics Description/Features Characteristics The 1N6660CAT1 center tap Schottky rectifier has


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    PDF PD-97554 22JGQ045 JANS1N6660CAT1 JANTX1N6660CAT1 JANTXV1N6660CAT1 MIL-PRF-19500/608 1N6660CAT1 O-254AA MIL-PRF-19500

    Untitled

    Abstract: No abstract text available
    Text: PD-20351H 15CLQ100 JANS1N7037CCU1 JANTX1N7037CCU1 JANTXV1N7037CCU1 SCHOTTKY RECTIFIER HIGH EFFICIENCY SERIES 35A, 100V Ref: MIL-PRF-19500/730 Major Ratings and Characteristics Description/Features Characteristics The 1N7037CCU1 center tap Schottky rectifier has


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    PDF PD-20351H 15CLQ100 JANS1N7037CCU1 JANTX1N7037CCU1 JANTXV1N7037CCU1 MIL-PRF-19500/730 1N7037CCU1 MIL-PRF-19500

    1N5817

    Abstract: 1N5818 1N5819
    Text: ßk MOSPEC 1N5817 thru 1N5819 Schottky Barrier Rectifiers SCHOTTKY BARRIER RECTIFIERS Using the Schottky Barrier principle with a Molybdenum barrier metal. These state-of-the-art geometry features epitaxial construction with oxide passivation and metal overlay contact.


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    PDF 1N5817 1N5819 1N5818 1N5819

    1N5820

    Abstract: 1N5821 1N5822
    Text: Bk MOSPEC 1N5820 thru 1N5822 Schottky Barrier Rectifiers SCHOTTKY BARRIER RECTIFIERS Using the Schottky Barrier principle with a Molybdenum barrier metal. These state-of-the-art geometry features epitaxial construction with oxide passivation and metal overlay contact.


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    PDF 1N5820 1N5822 1N5821

    1N5817

    Abstract: 1N5818 1N5819
    Text: Gk MOSPEC 1N5817 thru 1N5819 Schottky Barrier Rectifiers SCHOTTKY BARRIER RECTIFIERS Using the Schottky Barrier principle with a Molybdenum barrier metal. These state-of-the-art geometry features epitaxial construction with oxide passivation and metal overlay contact.


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    PDF 1N5817 1N5819 1N5818

    1N5820

    Abstract: 1N5821 1N5822
    Text: ßk MOSPEC 1N5820 thru 1N5822 Schottky Barrier Rectifiers SCHOTTKY B A R R IE R RECTIFIERS Using the Schottky Barrier principle with a Molybdenum barrier metal. These state-of-the-art geometry features epitaxial construction with oxide passivation and metal overlay contact.


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    PDF 1N5820 1N5822 1N5821 1N5822

    10R5

    Abstract: 150A 3D SPD2520 SPD2530 SPD5817 SPD5818 SPD5823 SPD5824 1N58121 10A16
    Text: ] o o EPION II AND SCHOTTKY RECTIFIERS 0.6A 3.0A 1.0A DO-34 TO-52 TO-52 DO-41 TO-46 TO-52 PILLPACKAGE SCHOTTKY 3ns 9ns SCHOTTKY SCHOTTKY 15ns SCHOTTKY 20 SPD2520 2A16 30 40 CASE 5.0A 6.0A 8.0A 10A 16A TO-5 TO-52 M (S)or(B) TO-59» TO-59 ♦ DO-4 TO-59 ♦


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    PDF DO-34 DO-41 SPD2520 SPD5817 SPD5823 2RA16/59 SPD2530 SPD5818 SPD5824 3RA16/59 10R5 150A 3D SPD2530 SPD5817 SPD5818 SPD5823 SPD5824 1N58121 10A16