MUR420 diode
Abstract: MUR860 equivalent Diode 31DQ06 mr760 DIODE usd745c equivalent 1N5186GP 1N2069 diode MARKING BCJ P600K SES5001 cross reference
Text: MBRM140T3 Advance Information Surface Mount Schottky Power Rectifier POWERMITE Power Surface Mount Package http://onsemi.com The Schottky Powermite employs the Schottky Barrier principle with a barrier metal and epitaxial construction that produces optimal
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MBRM140T3
VHE205
VHE210
VHE215
VHE220
VHE2401
VHE2402
VHE2403
VHE2404
VHE605
MUR420 diode
MUR860 equivalent
Diode 31DQ06
mr760 DIODE
usd745c equivalent
1N5186GP
1N2069
diode MARKING BCJ
P600K
SES5001 cross reference
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Diode 1N4007 DO-7 Rectifier Diode
Abstract: FE8D marking BCV BA157* diode MUR160 SMa diode rgp10g MBRD360 cathode top 1n5619 1N2069 mur120 equivalent diode
Text: MBRM120ET3 Surface Mount Schottky Power Rectifier POWERMITE Power Surface Mount Package The Schottky Powermite employs the Schottky Barrier principle with a barrier metal and epitaxial construction that produces optimal forward voltage drop–reverse current tradeoff. The advanced
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MBRM120ET3
VHE205
VHE210
VHE215
VHE220
VHE2401
VHE2402
VHE2403
VHE2404
VHE605
Diode 1N4007 DO-7 Rectifier Diode
FE8D
marking BCV
BA157* diode
MUR160 SMa
diode rgp10g
MBRD360
cathode top 1n5619
1N2069
mur120 equivalent diode
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mr852
Abstract: DIODE MUR410 BA 5904 A F P RS1G footprint wave soldering MUR460 BL mur1650 BYV1945 murs160t3 smb MBRD360 TRANSISTOR 534
Text: MBRM120LT3 Surface Mount Schottky Power Rectifier POWERMITE Power Surface Mount Package The Schottky Powermite employs the Schottky Barrier principle with a barrier metal and epitaxial construction that produces optimal forward voltage drop–reverse current tradeoff. The advanced
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MBRM120LT3
VHE205
VHE210
VHE215
VHE220
VHE2401
VHE2402
VHE2403
VHE2404
VHE605
mr852
DIODE MUR410
BA 5904 A F P
RS1G footprint wave soldering
MUR460 BL
mur1650
BYV1945
murs160t3 smb
MBRD360
TRANSISTOR 534
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Untitled
Abstract: No abstract text available
Text: B220/A - B260/A 2.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER Features_ • • • • • • • • Schottky Barrier Chip Guard Ring Die Construction for Transient Protection Ideally Suited for Automatic Assembly Low Power Loss, High Efficiency
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OCR Scan
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B220/A
B260/A
MIL-STD-202,
DS13004
B220/A-B260/A
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DB220-A
Abstract: No abstract text available
Text: B220/A - B260/A VISHAY 2.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER /uT E M ir J I POWERSEMICONDUCTOR Features ['I Schottky Barrier Chip Guard Ring Die Construction for Transient Protection Ideally Suited for Automatic Assembly Low Power Loss, High Efficiency
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OCR Scan
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B220/A
B260/A
DS13004
B220/A-B260/A
DB220-A
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PDF
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Untitled
Abstract: No abstract text available
Text: B220/A - B260/A 2.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER POWER SEMICONDUCTOR Features • • • • • • • • Schottky Barrier Chip Guard Ring Die Construction for Transient Protection Ideally Suited for Automatic Assembly Low Power Loss, High Efficiency
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B220/A
B260/A
DS13004
B220/A-B260/A
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B240
Abstract: 540 b240 B220 B260
Text: B220/A–B260/A Vishay Lite–On Power Semiconductor 2.0A Surface Mount Schottky Barrier Rectifiers Features D Schottky barrier chip D Guard ring die construction for transient protection D D D D Ideally suited for automatic assembly Low power loss, high efficiency
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B220/A
B260/A
D-74025
24-Jun-98
B240
540 b240
B220
B260
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VISHAY MARKING RG SMA
Abstract: No abstract text available
Text: B220/A - B260/A VISHAY 2.0 A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER /l i t e m î i ' I / POWERSEMICONDUCTOR Features Schottky Barrier Chip Guard Ring Die Construction for Transient Protection Ideally Suited for Automatic Assembly Low Power Loss, High Efficiency
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OCR Scan
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B220/A
B260/A
MIL-STD-202,
DS13004
B220/A-B260/A
VISHAY MARKING RG SMA
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PDF
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Untitled
Abstract: No abstract text available
Text: B220/A - B260/A 2.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER Features • • • • • • • • Schottky Barrier Chip Guard Ring Die Construction for Transient Protection Ideally Suited for Automatic Assembly Low Power Loss, High Efficiency Surge Overload Rating to 50A Peak
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OCR Scan
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B220/A
B260/A
DS13004
B220/A-B260/A
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PDF
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Untitled
Abstract: No abstract text available
Text: B220/A - B260/A 2.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER Features • · · · · · · · Schottky Barrier Chip Guard Ring Die Construction for Transient Protection Ideally Suited for Automatic Assembly Low Power Loss, High Efficiency Surge Overload Rating to 50A Peak
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B220/A
B260/A
DS13004
B220/A-B260/A
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PDF
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Untitled
Abstract: No abstract text available
Text: B220/A - B260/A 2.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER Features • · · · · · · · Schottky Barrier Chip Guard Ring Die Construction for Transient Protection Ideally Suited for Automatic Assembly Low Power Loss, High Efficiency Surge Overload Rating to 50A Peak
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Original
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B220/A
B260/A
DS13004
B220/A-B260/A
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PDF
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Untitled
Abstract: No abstract text available
Text: B220/A - B260/A 2.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER SPICE MODELS: B220 B230 B240 B250 B260 B220A B230A B240A B250A B260A Features • · · · · · · Schottky Barrier Chip Guard Ring Die Construction for Transient Protection Ideally Suited for Automatic Assembly
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B220/A
B260/A
B220A
B230A
B240A
B250A
B260A
DS13004
B220/A-B260/A
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Untitled
Abstract: No abstract text available
Text: B220/A - B260/A 2.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER SPICE MODELS: B220 B230 B240 B250 B260 B220A B230A B240A B250A B260A Features • · · · · · · · Schottky Barrier Chip Guard Ring Die Construction for Transient Protection Ideally Suited for Automatic Assembly
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B220/A
B260/A
B220A
B230A
B240A
B250A
B260A
DS13004
B220/A-B260/A
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Untitled
Abstract: No abstract text available
Text: B220/A - B260/A 2.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER SPICE MODEL: B220 B230 B240 B250 B260 B220A B230A B240A B250A B260A Features • · · · · · · · Schottky Barrier Chip Guard Ring Die Construction for Transient Protection Ideally Suited for Automatic Assembly
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B220/A
B260/A
B220A
B230A
B240A
B250A
B260A
52RWARD
DS13004
B220/A-B260/A
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schottky diode SMB marking code 120
Abstract: B240 Diode B2x marking b240 diode B240A B250A B260 B220 B220A B230
Text: B220/A - B260/A 2.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER SPICE MODELS: B220 B230 B240 B250 B260 B220A B230A B240A B250A B260A Features • · · · · · · · Schottky Barrier Chip Guard Ring Die Construction for Transient Protection Ideally Suited for Automatic Assembly
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B220/A
B260/A
B220A
B230A
B240A
B250A
B260A
DS13004
B220/A-B260/A
schottky diode SMB marking code 120
B240
Diode B2x
marking b240 diode
B260
B220
B230
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1n5822 trr
Abstract: A14F diode FR105 diode MR850 diode A14A BYV27 200 TAP LT2A02 MBR3100 0630 1N4007 sod-123 SES50
Text: MBRD1035CTL SWITCHMODE Schottky Power Rectifier DPAK Power Surface Mount Package . . . employing the Schottky Barrier principle in a large area metal–to–silicon power diode. State of the art geometry features epitaxial construction with oxide passivation and metal overlay
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MBRD1035CTL
VHE205
VHE210
VHE215
VHE220
VHE2401
VHE2402
VHE2403
VHE2404
VHE605
1n5822 trr
A14F diode
FR105 diode
MR850
diode A14A
BYV27 200 TAP
LT2A02
MBR3100 0630
1N4007 sod-123
SES50
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Untitled
Abstract: No abstract text available
Text: 1/2 HIGH POWER SINGLE DIODES RECTIFIER & SCHOTTKY BARRIER DIODES • RECTIFIER DIODES AVAILABLE UP TO 1,000V AND 3A • SCHOTTKY BARRIER DIODES AVAILABLE UP TO 60V AND 3A • SURGE OVERLOAD RATING EITHER 30A, 50A OR 100A • RELIABLE LOW COST CONSTRUCTION WITH UL 94V-0 PLASTIC MATERIAL
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AK03
Abstract: CTB34M B29L FMB-G24H RBA-406B RK36 FMBG24H rk49
Text: R SCHOTTK Pi3IODE SCHOTTKY BARRIER DIODES CENTER-TAP TYPE SCHOTTKY BARRIER DIODES Absolute Maximum Ratings (TA=25°C) Type Mo. V rm lo I fsm (V) (A) (A) with Fin SFPB-52 1.0 (V) 30 SFPB-62 20 2.0 SFPB -72 20 3.0 60 RK42 20 3.0 100 FM B-G12L 20 5.0 100 FMB-G22H
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OCR Scan
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SFPB-52
SFPB-62
B-G12L
FMB-G22H
SFPB-54
B-G14L
FMB-G24H
SFPB-56
SFPB-76
CTB-24L
AK03
CTB34M
B29L
RBA-406B
RK36
FMBG24H
rk49
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IC 74187
Abstract: lt 6246 MMI 6330 74s188 ic 74s201 6301-1 prom HARRIS 8249 mmi 6331 82S2708 74S288
Text: Siginetics Integrated Circuits Schottky T T L Schottky T T L 74S Series Cont. TYPE NO. N74S260N N74S280AN N74S287N N74S288N N74S289N DE SC R IPTIO N Dual 5 -ln p u t N O R Gate 9 -B it O dd/E ven P arity G enerator/Checker . 102 4-B it Prom -3 State? o /p
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OCR Scan
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N74S260N
55616D
N74S280AN
S5617B
N74S287N
1024-Bit
55618X
N74S288N
256-Bit
55619R
IC 74187
lt 6246
MMI 6330
74s188
ic 74s201
6301-1 prom
HARRIS 8249
mmi 6331
82S2708
74S288
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KSHA04
Abstract: B250A B260A B220A B230A B240A
Text: LITE-ON SEMICONDUCTOR B220A thru B260A REVERSE VOLTAGE - 20 to 60 Volts FORWARD CURRENT - 2.0 Amperes SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS FEATURES SMA For surface mounted applications Metal-Semiconductor junction with guardring Epitaxial construction
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B220A
B260A
B240A
B250A
300us
01-Dec-2000,
KSHA04
KSHA04
B260A
B230A
B240A
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B240A
Abstract: B260A B220A B230A B250A DO214AC B230A
Text: B220A thru B260A Surface Mount Schottky Barrier Rectifiers REVERSE VOLTAGE 20 TO 60 VOLTS FORWARD CURRENT 2.0 AMPERE Feature: *For Surface Mount Application *Metal-Semiconductor Junction With Guardring *Epitaxial Construction *Very Low Forward Voltage Drop
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B220A
B260A
DO-214AC)
B240A
B250A
300us
B240A
B260A
B230A
DO214AC B230A
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PDF
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B2200
Abstract: B280A AB220A B220A B240A B2200A B230A B250A B260A
Text: B220A thru B2200A Compact Technology REVERSE VOLTAGE - 20 to 200 Volts FORWARD CURRENT - 2.0 Amperes SCHOTTKY BARRIER RECTIFIERS SMA FEATURES Metal-Semiconductor junction with guard ring Epitaxial construction Low forward voltage drop High current capability
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B220A
B2200A
B240A
B250A
B260A
B280A
B2100A
B2150A
B2200
AB220A
B240A
B2200A
B230A
B260A
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PDF
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Untitled
Abstract: No abstract text available
Text: LITE ON POWER SEMICONDUCTOR B220A thru B260A REVERSE VOLTAGE - 20 to 60 Volts FORWARD CURRENT - 2.0 Amperes SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS FEATURES SMA For surface mounted applications Metal-Semiconductor junction with guardring Epitaxial construction
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B220A
B260A
B240A
B250A
300us
24-May-2000
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Untitled
Abstract: No abstract text available
Text: LITE ON POWER SEMICONDUCTOR B220 thru B260 REVERSE VOLTAGE - 20 to 60 Volts FORWARD CURRENT - 2.0 Amperes SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS FEATURES SMB For surface mounted applications Metal-Semiconductor junction with guardring Epitaxial construction
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300us
24-May-2000
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