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    SCHOTTKY BARRIER DIODE 40V 40MA Search Results

    SCHOTTKY BARRIER DIODE 40V 40MA Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    CUHS20S60 Toshiba Electronic Devices & Storage Corporation Schottky Barrier Diode (SBD), 60 V, 2.0 A, US2H Visit Toshiba Electronic Devices & Storage Corporation
    CUHS20F60 Toshiba Electronic Devices & Storage Corporation Schottky Barrier Diode (SBD), 60 V, 2.0 A, US2H Visit Toshiba Electronic Devices & Storage Corporation
    CUHS15S60 Toshiba Electronic Devices & Storage Corporation Schottky Barrier Diode (SBD), 60 V, 1.5 A, US2H Visit Toshiba Electronic Devices & Storage Corporation
    CUHS15F60 Toshiba Electronic Devices & Storage Corporation Schottky Barrier Diode (SBD), 60 V, 1.5 A, US2H Visit Toshiba Electronic Devices & Storage Corporation
    TRS8E65H Toshiba Electronic Devices & Storage Corporation SiC Schottky Barrier Diode (SBD), 650 V, 8 A, TO-220-2L Visit Toshiba Electronic Devices & Storage Corporation

    SCHOTTKY BARRIER DIODE 40V 40MA Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    schottky barrier diode 40v 40mA

    Abstract: ASB40
    Text: ASB40 SMD Schottky Barrier Diode Features General Description IO = 100mA 0603 1608 VR = 40V 0.071(1.80) 0.063(1.60) - Low forward voltage 0.039(1.00) 0.031(0.80) - Designed for mounting on small surface. - Extremely thin package. 0.033(0.85) 0.027(0.70) - Majority carrier conduction.


    Original     		PDF ASB40 100mA MIL-STD-750, schottky barrier diode 40v 40mA ASB40

    Untitled

    Abstract: No abstract text available
    Text: BYV143-40MA BYV143-40AM BYV143-40RM S EM E LA B MECHANICAL DATA Dimensions in mm DUAL SCHOTTKY BARRIER DIODE IN TO220 METAL PACKAGE FOR HI–REL APPLICATIONS 4.6 1 0.6 1 0 .6 3.6 Dia. 1 3 .5 16.5 0.8 FEATURES 1 23 1 3 .7 0 • • • • • • 1.0 2 .5 4


    Original     		PDF BYV143-40MA BYV143-40AM BYV143-40RM BYV143-45MA BYV143-45AM BYV143-45RM BYV143-xxM BYV143-xxAM BYV143-xxRM

    common anode schottky to220

    Abstract: BYV143 BYV143-45AM common cathode to220 Schottky diode TO220 BYV143-40AM BYV143-40MA BYV143-40RM BYV143-45MA BYV143-45RM
    Text: BYV143-40MA BYV143-40AM BYV143-40RM SEME LAB MECHANICAL DATA Dimensions in mm DUAL SCHOTTKY BARRIER DIODE IN TO220 METAL PACKAGE FOR HI–REL APPLICATIONS 4.6 1 0.6 1 0 .6 3.6 Dia. 1 3 .5 16.5 0.8 FEATURES 1 23 1 3 .7 0 • • • • • • 1.0 2 .5 4 BSC


    Original     		PDF BYV143-40MA BYV143-40AM BYV143-40RM BYV143-45MA BYV143-45AM BYV143-45RM BYV143-xxM BYV143-xxAM BYV143-xxRM common anode schottky to220 BYV143 BYV143-45AM common cathode to220 Schottky diode TO220 BYV143-40AM BYV143-40MA BYV143-40RM BYV143-45MA BYV143-45RM

    BAS40

    Abstract: BAS40-04 BAS40-05 BAS40-06 BAS70 BAS70-04 BAS70-05 BAS70-06
    Text: Product Catalog > Diodes > Small Signal Schottky Diodes > Part Number BAS40-05 product family SMALL SIGNAL SCHOTTKY DIODES package type SOT-23 VRM PRV 40V Ifsm 600mA IF(AV) 200mA @Vf 1V @If 40mA Trr 5nS IR 200nA @VR 30V Package Qty Tape : 3K/Reel, 120K/Ctn;


    Original     		PDF BAS40-05 OT-23 600mA 200mA 200nA 120K/Ctn; BAS40 BAS70 OT-23 BAS40 BAS40-04 BAS40-05 BAS40-06 BAS70 BAS70-04 BAS70-05 BAS70-06

    BAS40

    Abstract: BAS40-04 BAS40-05 BAS40-06 BAS70 BAS70-04 BAS70-05 BAS70-06
    Text: Product Catalog > Diodes > Small Signal Schottky Diodes > Part Number BAS40 product family SMALL SIGNAL SCHOTTKY DIODES package type SOT-23 VRM PRV 40V Ifsm 600mA IF(AV) 200mA @Vf 1V @If 40mA Trr 5nS IR 200nA @VR 30V Package Qty Tape : 3K/Reel, 120K/Ctn;


    Original     		PDF BAS40 OT-23 600mA 200mA 200nA 120K/Ctn; BAS70 OT-23 BAS40 BAS40-04 BAS40-05 BAS40-06 BAS70 BAS70-04 BAS70-05 BAS70-06

    BAS40

    Abstract: BAS40-04 BAS40-05 BAS40-06 BAS70 BAS70-04 BAS70-05 BAS70-06 schottky barrier diode 40v 40mA
    Text: Product Catalog > Diodes > Small Signal Schottky Diodes > Part Number BAS40-06 product family SMALL SIGNAL SCHOTTKY DIODES package type SOT-23 VRM PRV 40V Ifsm 600mA IF(AV) 200mA @Vf 1V @If 40mA Trr 5nS IR 200nA @VR 30V Package Qty Tape : 3K/Reel, 120K/Ctn;


    Original     		PDF BAS40-06 OT-23 600mA 200mA 200nA 120K/Ctn; BAS40 BAS70 OT-23 BAS40 BAS40-04 BAS40-05 BAS40-06 BAS70 BAS70-04 BAS70-05 BAS70-06 schottky barrier diode 40v 40mA

    SCS40STN

    Abstract: No abstract text available
    Text: SCS40STN 0.12 A, 40 V Silicon Epitaxial Planar Schottky Barrier Rectifiers Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free DESCRIPTION WBFBP-02C Planar Schottky barrier diode with an integrated guard ring


    Original     		PDF SCS40STN WBFBP-02C 13-Dec-2013 SCS40STN

    NTE7232

    Abstract: NTE2682 NTE2684 NTE7239 pdf/ES-F8DB-14A464-A
    Text: NTE SEMICONDUCTORS ADDED SINCE MAY 2013 NTE PART NO. DESCRIPTION Datasheet Link NTE573-1 RECTIFIERS Schottky Barrier Rectifier, 100V, 5 Amp, DO‐201AD Case NTE573‐2 Schottky Barrier Rectifier, 200V, 5 Amp, DO‐201AD Case


    Original     		PDF NTE573â 201ADÂ com/specs/500to599/pdf/nte573â NTE639 214AAÂ NTE7232 NTE2682 NTE2684 NTE7239 pdf/ES-F8DB-14A464-A

    Untitled

    Abstract: No abstract text available
    Text: BAS40/BAS40-04 BAS40-05/BAS40-06 Surface Mount Schottky Barrier Diodes SMALL SIGNAL SCHOTTKY DIODES 200m AMPERES 40 VOLTS Features: * Low forward current * Guard ring protected * Low diode capacitance. Applications: 3 * Ultra high-speed switching * Voltage clamping


    Original     		PDF BAS40/BAS40-04 BAS40-05/BAS40-06 OT-23 OT-23 10KHz 06-May-2011

    LBAS40BST5G

    Abstract: No abstract text available
    Text: LESHAN RADIO COMPANY, LTD. SCHOTTKY BARRIER DIODE Features Low forward current Guard ring protected Low diode capacitance. S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable.


    Original     		PDF AEC-Q101 LBAS40BST5G S-LBAS40BST5G OD882 LBAS40BST1G S-LBAS40BST1G 5000/Tape LBAS40BST3G 10KHz LBAS40BST5G

    Untitled

    Abstract: No abstract text available
    Text: LESHAN RADIO COMPANY, LTD. SCHOTTKY BARRIER DIODE LBAS40BST5G S-LBAS40BST5G Features Low forward current Guard ring protected Low diode capacitance. S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101


    Original     		PDF LBAS40BST5G S-LBAS40BST5G AEC-Q101 OD882 LBAS40BST1G S-LBAS40BST1G 5000/Tape LBAS40BST3G S-LBAS40BST 10KHz

    LBAS40-06LT1

    Abstract: BAS40 BAS40-04 BAS40-05 BAS40-06 LBAS40-04LT1 LBAS40-05LT1 LBAS40LT1
    Text: LESHAN RADIO COMPANY, LTD. SCHOTTKY BARRIER DOUBLE DIODE LBAS40*LT1 3 1 Features 2 Low forward current Guard ring protected Low diode capacitance. SOT- 23 APPLICATIONS Ultra high-speed switching Voltage clamping Protection circuits. Blocking diodes. DESCRIPTION


    Original     		PDF LBAS40 BAS40 BAS40-05 BAS40-04 BAS40-06 LBAS40 OT-23 LBAS40-06LT1 LBAS40-04LT1 LBAS40-05LT1 LBAS40LT1

    BAS40

    Abstract: BAS40-04
    Text: LESHAN RADIO COMPANY, LTD. SCHOTTKY BARRIER DIODE LBAS40XLT1G Features 3 Low forward current Guard ring protected Low diode capacitance. 1 2 APPLICATIONS SOT- 23 Ultra high-speed switching Voltage clamping Protection circuits. 1 Anode Blocking diodes. 3 Cathode


    Original     		PDF LBAS40XLT1G BAS40 LBAS40LT1G LBAS40LT3G LBAS40-05LT1G LBAS40-05LT3G LBAS40-06LT1n OT-23 BAS40-04

    Untitled

    Abstract: No abstract text available
    Text: LESHAN RADIO COMPANY, LTD. SCHOTTKY BARRIER DIODE LBAS40LT1G Series Features 3 Low forward current Guard ring protected Low diode capacitance. 1 2 APPLICATIONS SOT- 23 Ultra high-speed switching Voltage clamping Protection circuits. 1 Anode Blocking diodes.


    Original     		PDF LBAS40LT1G BAS40 LBAS40LT3G LBAS40-05LT1G LBAS40-05LT3G LBAS40LT1G OT-23

    Untitled

    Abstract: No abstract text available
    Text: LESHAN RADIO COMPANY, LTD. SCHOTTKY BARRIER DIODE LBAS40LT1G Series S-LBAS40LT1G Series Features Low forward current Guard ring protected Low diode capacitance. 3 APPLICATIONS Ultra high-speed switching Voltage clamping Protection circuits. 1 2 SOT- 23 Blocking diodes.


    Original     		PDF LBAS40LT1G S-LBAS40LT1G LBAS40LT1G AEC-Q101 LBAS40-04LT1G S-LBAS40LT1G OT-23

    Untitled

    Abstract: No abstract text available
    Text: LESHAN RADIO COMPANY, LTD. SCHOTTKY BARRIER DIODE Features Low forward current Guard ring protected Low diode capacitance. S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable.


    Original     		PDF AEC-Q101 LBAS40LT1G S-LBAS40LT1G BAS40 LBAS40LT3G S-LBAS40L LBAS40LT1G S-LBAS40LT1G

    Untitled

    Abstract: No abstract text available
    Text: LESHAN RADIO COMPANY, LTD. SCHOTTKY BARRIER DIODE Features Low forward current Guard ring protected LBAS40LT1G Series S-LBAS40LT1G Series Low diode capacitance. S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101


    Original     		PDF LBAS40LT1G S-LBAS40LT1G AEC-Q101 BAS40 LBAS40LT3G LBAS40LT1G S-LBAS40LT1G OT-23

    Untitled

    Abstract: No abstract text available
    Text: LESHAN RADIO COMPANY, LTD. SCHOTTKY BARRIER DIODE Features Low forward current Guard ring protected Low diode capacitance. S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable.


    Original     		PDF AEC-Q101 LBAS40LT1G S-LBAS40LT1G BAS40 LBAS40LT1G S-LBAS40LT1G OT-23

    BAS40

    Abstract: BAS40-04 BAS40-05 BAS40-06 BAS70 BAS70-04 BAS70-05 BAS70-06 Schottky barrier sot-23 40V
    Text: Profile | Designer Kits | Products | Applications | Catalog | Contact Us | Event Calendar | Terms & Conditions Product Catalog > Diodes > Small Signal Schottky Diodes > Part Number BAS40-04 product family SMALL SIGNAL SCHOTTKY DIODES package type SOT-23 VRM PRV


    Original     		PDF BAS40-04 OT-23 600mA 200mA 200nA 120K/Ctn; BAS40 BAS70 OT-23 BAS40 BAS40-04 BAS40-05 BAS40-06 BAS70 BAS70-04 BAS70-05 BAS70-06 Schottky barrier sot-23 40V

    pn junction diode structure

    Abstract: "Power Diode" smd 3a LM317 spice MOSFET HALF BRIDGE Power Supply AC TO DC5V 50 IGBT 60A spice model AC DC 60v 10amp 31DF2 S0D-123 ferrite transformer power for power supply atx what is THERMAL RUNAWAY IN RECTIFIER MOSFET
    Text: CONTENTS Diode is the basics power semiconductor 1 Structure, symbol, and basic nature of diode １ Rectifier diode for general use, and fast recovery diode 2 Experiments to ascertain basic nature of diode — Forward and Reverse characteristics 2 Forward power loss and reverse power loss


    Original     		PDF

    marking k43 diode

    Abstract: Diode Marking .004
    Text: MCC   omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# BAS40TW Features • • 200mW 40Volt Schottky Barrier Diode Pow Dissipation PD=200mW Tamb=25℃ IF=200mA Marking: K43 Maximum Ratings •


    Original     		PDF BAS40TW 200mW 200mA 40Volt OT-363 380mV 1000mV 200nA 30Volts marking k43 diode Diode Marking .004

    2am smd transistor

    Abstract: transistor smd 4z HALL SENSOR A 22L 78Mos EL 14v 4c 78 MOS GENERAL SEMICONDUCTOR MARKING mJ SMA ED smd transistor marking 12W TRANSISTOR SMD MARKING CODE 1P TRANSISTOR SMD MARK CODE 7a
    Text: High-side Power Switch with Diagnostic Function SI-5155S External Dimensions unit: mm ● Built-in diagnostic function to detect short and open circuiting of loads and output status signals ● Low saturation PNP transistor use ● Allows direct driving using LS-TTL and C-MOS logic levels


    Original     		PDF SI-5155S O-220 Rati03S SPX-62S SI-3011S SPX-G32S SI-3101S SPZ-G36 SI-3102S SSB-14 2am smd transistor transistor smd 4z HALL SENSOR A 22L 78Mos EL 14v 4c 78 MOS GENERAL SEMICONDUCTOR MARKING mJ SMA ED smd transistor marking 12W TRANSISTOR SMD MARKING CODE 1P TRANSISTOR SMD MARK CODE 7a

    alternator rectifier diode 50a

    Abstract: EL 14v 4c STA509A equivalent sta509a smd diode marking A05 CTB-34M HALL SENSOR A 22L GENERAL SEMICONDUCTOR MARKING mJ SMA ED TRANSISTOR SMD MARKING CODE 12w Zener diode smd marking code 22h
    Text: Bulletin No C01EA0 Jun., 1999 DEVICES for AUTOMOTIVE CAUTION / WARNING • The information in this publication has been carefully checked and is believed to be accurate; however, no responsibility is assumed for inaccuracies. • Sanken reserves the right to make changes without further notice to any products herein


    Original     		PDF C01EA0 H1-C01EA0-9906015TA alternator rectifier diode 50a EL 14v 4c STA509A equivalent sta509a smd diode marking A05 CTB-34M HALL SENSOR A 22L GENERAL SEMICONDUCTOR MARKING mJ SMA ED TRANSISTOR SMD MARKING CODE 12w Zener diode smd marking code 22h

    Untitled

    Abstract: No abstract text available
    Text: LESHAN RADIO COMPANY, LTD. SCHOTTKY BARRIER DIODE Features Low forward current Guard ring protected Low diode capacitance. LBAS40XLT1G 3 APPLICATIONS Ultra high-speed switching Voltage clamping Protection circuits. Blocking diodes. DESCRIPTION Planar Schottky barrier diodes with an integrated guard ring for


    Original     		PDF LBAS40XLT1G LBAS40LT1G LBAS40LT3G LBAS40-04LT1G LBAS40-04LT3G LBAS40-05LT1G LBAS40-05LT3G LBAS40-06LT1G