ultrafast igbt
Abstract: 1200-VOLT IGBT 50 amp 1000 volt calculation of IGBT snubber CPWR-AN03 Cree SiC MOSFET 12 VOLT 10 AMP smps 24 volt 10 amp smps power diode AN-11A
Text: Hard-Switched Silicon IGBTs? Cut Switching Losses in Half with Silicon Carbide Schottky Diodes by Jim Richmond Replacing the Si Ultrafast soft-recovery diode used as the freewheeling component in hard-switched IGBT applications with a Silicon Carbide SiC Schottky diode reduces the switching losses in the diode by 80% and the switching
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of169
1200-volt
CPWR-AN03,
ultrafast igbt
IGBT 50 amp 1000 volt
calculation of IGBT snubber
CPWR-AN03
Cree SiC MOSFET
12 VOLT 10 AMP smps
24 volt 10 amp smps
power diode
AN-11A
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IGBT 50 amp 1000 volt
Abstract: Cree SiC MOSFET 12 VOLT 150 AMP smps circuit 24 volt 10 amp smps 10 amp igbt 1000 volt 12 VOLT 2 AMP smps circuit IGBT 50 amp 1200 volt Calculation of major IGBT operating parameters CPWR-AN03 IGBT JUNCTION TEMPERATURE CALCULATION
Text: APPLICATION NOTE Hard Switched Silicon IGBT’s? Cut Switching Losses in Half with Silicon Carbide Schottky Diodes By Jim Richmond Replacing the Si Ultrafast soft recovery diode used as the freewheeling component in hard switched IGBT applications with a Silicon Carbide SiC Schottky diode
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Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD MBR4045C DIODE 40A SCHOTTKY BARRIER RECTIFIER DESCRIPTION The UTC MBR4045C is a 40A schottky barrier rectifier, it uses UTC’s advanced technology to provide the customers with high surge capability, high efficiency, high current capability, low power
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MBR4045C
MBR4045C
MBR4045CL-TA3-T
QW-R601-273
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Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD MBR40100C Preliminary DIODE 40A SCHOTTKY BARRIER RECTIFIER DESCRIPTION The UTC MBR40100C is a 40A schottky barrier rectifier, it uses UTC’s advanced technology to provide the customers with high surge capability, high efficiency, high current capability, low power
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MBR40100C
MBR40100C
MBR40100CL-TA3-T
MBR40100CG-TA3-T
QW-R601-274
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Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD MBR4060C Preliminary DIODE 40A SCHOTTKY BARRIER RECTIFIER DESCRIPTION The UTC MBR4060C is a 40A schottky barrier rectifier, it uses UTC’s advanced technology to provide the customers with high surge capability, high efficiency, high current capability, low power
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MBR4060C
MBR4060C
MBR4060CL-TA3-T
MBR4060CL-Tat
QW-R601-275
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Untitled
Abstract: No abstract text available
Text: APT40DC60HJ ISOTOP SiC Diode Full Bridge Power Module VRRM = 600V IC = 40A @ Tc = 100°C Application • Switch mode power supplies rectifier Induction heating Welding equipment High speed rectifiers Features + ~ SiC Schottky Diode
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APT40DC60HJ
OT-227)
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Untitled
Abstract: No abstract text available
Text: APT40DC120HJ ISOTOP SiC Diode Full Bridge Power Module VRRM = 1200V IC = 40A @ Tc = 100°C Application • • • • Switch mode power supplies rectifier Induction heating Welding equipment High speed rectifiers Features • SiC Schottky Diode - Zero reverse recovery
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APT40DC120HJ
OT-227)
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Untitled
Abstract: No abstract text available
Text: APT40DC60HJ ISOTOP SiC Diode Full Bridge Power Module VRRM = 600V IC = 40A @ Tc = 100°C Application • • • • Switch mode power supplies rectifier Induction heating Welding equipment High speed rectifiers Features • SiC Schottky Diode - Zero reverse recovery
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APT40DC60HJ
OT-227)
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PDF
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Untitled
Abstract: No abstract text available
Text: APT40DC120HJ ISOTOP SiC Diode Full Bridge Power Module VRRM = 1200V IC = 40A @ Tc = 100°C Application • Switch mode power supplies rectifier Induction heating Welding equipment High speed rectifiers Features + ~ SiC Schottky Diode
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APT40DC120HJ
OT-227)
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APT20S
Abstract: No abstract text available
Text: 1 2 TO-220 1 - Cathode 2 - Anode Back of Case - Cathode APT20SC60K 600V 20A 1 2 SILICON CARBIDE SCHOTTKY RECTIFIER DIODE PRODUCT APPLICATIONS PRODUCT FEATURES PRODUCT BENEFITS • PFC And Forward Topologies • Schottky Barrier • Switching Losses Nearly
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O-220
APT20SC60K
O-220
APT20S
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Abstract: No abstract text available
Text: n.c . n.c . K K 7 22 OT A S A APT20SC120J Discrete 1200V 20A APT20SC120J SILICON CARBIDE SCHOTTKY RECTIFIER DIODE PRODUCT APPLICATIONS PRODUCT FEATURES PRODUCT BENEFITS • PFC And Forward Topologies • Schottky Barrier • Switching Losses Nearly • •
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APT20SC120J
OT-227
Operatio50)
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feature of ic UM 66
Abstract: wo02 Trench MOS Schottky Rectifier um 66 ic "A low barrier Schottky metal was used" 40L15CT 65PQ015 80CPT015 wo-02
Text: Increased Efficiency and Improved Reliability in “ORing” functions using Trench Schottky Technology Davide Chiola, Stephen Oliver, Marco Soldano International Rectifier, El Segundo, USA. As presented at PCIM Europe, 2002 Abstract – Presented in this paper are the characteristics of the first Trench MOS Schottky Diode released to
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WO02/19433
feature of ic UM 66
wo02
Trench MOS Schottky Rectifier
um 66 ic
"A low barrier Schottky metal was used"
40L15CT
65PQ015
80CPT015
wo-02
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Untitled
Abstract: No abstract text available
Text: APT40DS04HJ ISOTOP Schottky Diode Full Bridge Power Module VRRM = 45V IF = 40A @ Tc = 80°C Application • • • Switch mode power supplies rectifier Induction heating Welding equipment Features • • • • • • + ~ ~ - Ultra fast recovery times
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APT40DS04HJ
OT-227)
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Untitled
Abstract: No abstract text available
Text: APT40DS04HJ ISOTOP Schottky Diode Full Bridge Power Module VRRM = 45V IF = 40A @ Tc = 80°C Application • Switch mode power supplies rectifier Induction heating Welding equipment Features + ~ ~ - Ultra fast recovery times
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APT40DS04HJ
OT-227)
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mosfet SMD 6 PIN IC FOR PWM
Abstract: 210nH IR3553MTRPBF ir3550 IR3553
Text: IR3553 40A Integrated PowIRstage FEATURES DESCRIPTION • Peak efficiency up to 93.2% at 1.2V Integrated driver, control MOSFET, synchronous MOSFET and Schottky diode Input voltage VIN operating range up to 15V Output voltage range from 0.25V up to 3.3V
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IR3550
IR3551
IR3553
IR3553
3553M
mosfet SMD 6 PIN IC FOR PWM
210nH
IR3553MTRPBF
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Untitled
Abstract: No abstract text available
Text: SCS240KE2 Datasheet SiC Schottky Barrier Diode Outline VR 1200V IF 20A/40A* QC 66nC Per leg TO-247 *(Per leg / Both legs) (1) (2) Features (3) Inner circuit 1) Shorter recovery time 2) Reduced temperature dependence (1) Anode (2) Cathode (3) Anode
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SCS240KE2
0A/40A*
O-247
R1102B
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Untitled
Abstract: No abstract text available
Text: SCHOTTKY RECTIFIER DIODE SML4045CP1 • Hermetic TO3 Package • VRRM = 45V, IF =40A • Space Level and High-Reliability Screening Options Available ABSOLUTE MAXIMUM RATINGS TA = 25°C unless otherwise stated VRRM VRWM VR IO IFSM TJ TSTG Repetitive Peak Reverse Voltage
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SML4045CP1
81C/W)
O-204AA)
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SCS240KE2
Abstract: No abstract text available
Text: SCS240KE2 Datasheet SiC Schottky Barrier Diode Outline VR 1200V IF 20A/40A* QC 66nC Per leg TO-247 *(Per leg / Both legs) (1) (2) Features (3) Inner circuit 1) Shorter recovery time 2) Reduced temperature dependence (1) Anode (2) Cathode (3) Anode
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SCS240KE2
0A/40A*
O-247
R1102B
SCS240KE2
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Schottky Diode Marking C3
Abstract: No abstract text available
Text: Schottky Barrier Diode Twin Diode Wtm S40HC3 OUTLINE 30V 40A m sm Feature • Tj=125°C • • • • • fiVF= 0.40V • e • * t ä § i Tj=125°C Low V f=0.40V Small B jc High lo Rating Main Use • Reverse current protection • Server, Router, RAID
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S40HC3
i50Hz
Schottky Diode Marking C3
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Untitled
Abstract: No abstract text available
Text: Schottky Barrier Diode Twin Diode mwm DF40PC3 o u t lin e 30V 40A Feature • SMD • SMD • ÎS <6V f =0.4V • Ultra-Low Vf=0.4V • High lo Rating'Small-PKG Main Use • Reverse connect protection for DC power source • D C tti^ O R Œ • D C /D C o y <-•$>
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DF40PC3
50Ilz
J532-1)
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SG40TC10M
Abstract: marking KZ diode
Text: Schottky Barrier Diode Twin Diode mtmm Unit: mm Package : FTO-220G S G 40T C 1OM Weight L54g Typ o » h E # (M ) 100V 40A mwm o u t lin e 4.5 Feature • Tj=175°C • 7) IÆ-JUK • 1SlR =60pA • Ü & H tii U L < IA • • • • Tj=175°C Full Molded
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SG40TC1OM
FTO-220G
50Hzr
CJ533-1
SG40TC10M
marking KZ diode
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marking JB SCHOTTKY BARRIER DIODE
Abstract: marking JB diode SG40TC12M diode marking jb
Text: Schottky Barrier Diode Twin Diode mtmm SG40TC12M o u tlin e Package : FTO-220G Unit : mm o -y H d ^ J 120V 40A 4.5 Feature • Tj=175°C • • • • • 7 Jb = E -Jb K • < S Ir = 6 0 |j A Tj=175°C Full Molded Low Ir=60|jA Resistance for thermal run-away
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FTO-220G
SG40TC12M
J533-1)
50IIz
J533-1
marking JB SCHOTTKY BARRIER DIODE
marking JB diode
SG40TC12M
diode marking jb
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Untitled
Abstract: No abstract text available
Text: Surface Mounting Device y b V T & ' f Schottky Barrier Diode # — F y - o m WÆ Twin Diode OUTLINE DIMENSIONS DF40SC3L Case : STO-220 10.2 = 02 n , 30V 40A Type No. ta tte r 2.4 ±0-a 40SC3L •SM D • T j 150TC Ü r n • Ê V f = 0 .4 5 V # P 0 .1 ±fil
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DF40SC3L
STO-220
40SC3L
150TC
D00330D
00033D1
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Untitled
Abstract: No abstract text available
Text: Schottky Barrier Diode Twin Diode mwm o u t lin e Package : STO-220 DF40SC3L U n ii I m m W e ig h t 30V 40A Date code ^ N Feature N . 0176 Control No. • SMD • SMD • SV f=0.45V • Low Vf=0.45V • P rrsm7’K 5 > ì ' i ® ì ì ì • PnnsM Rating
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STO-220
DF40SC3L
40SC3L
10000iâ
J532-1
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