Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    SCHOTTKY DIODE LL41 Search Results

    SCHOTTKY DIODE LL41 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    CUHS20S60 Toshiba Electronic Devices & Storage Corporation Schottky Barrier Diode (SBD), 60 V, 2.0 A, US2H Visit Toshiba Electronic Devices & Storage Corporation
    CUHS20F60 Toshiba Electronic Devices & Storage Corporation Schottky Barrier Diode (SBD), 60 V, 2.0 A, US2H Visit Toshiba Electronic Devices & Storage Corporation
    CUHS15S60 Toshiba Electronic Devices & Storage Corporation Schottky Barrier Diode (SBD), 60 V, 1.5 A, US2H Visit Toshiba Electronic Devices & Storage Corporation
    CUHS15F60 Toshiba Electronic Devices & Storage Corporation Schottky Barrier Diode (SBD), 60 V, 1.5 A, US2H Visit Toshiba Electronic Devices & Storage Corporation
    TRS8E65H Toshiba Electronic Devices & Storage Corporation SiC Schottky Barrier Diode (SBD), 650 V, 8 A, TO-220-2L Visit Toshiba Electronic Devices & Storage Corporation

    SCHOTTKY DIODE LL41 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    RB160-40

    Abstract: KBPC10010 MP1008 zener diode sod80 rohm MMBZ524B RLR4002 SMAZ56 DIODE US1J KBPC5010 SMAJ11
    Text: Small Signal Switching and Schottky Diodes Family Application Comchip Vishay / G ON-Semi Diode Inc. Philips Rohm Switching Diode High Speed CDSL4148 LL4148 LL4148 LL4148 PMLL4148 RLS4148 Family Application Comchip Vishay / G ON-Semi CDSF335 BAS16WS CDSF4148


    Original     		PDF CDSL4148 LL4148 PMLL4148 RLS4148 CDSF335 BAS16WS CDSF4148 1N4148WS RB160-40 KBPC10010 MP1008 zener diode sod80 rohm MMBZ524B RLR4002 SMAZ56 DIODE US1J KBPC5010 SMAJ11

    secos gmbh

    Abstract: c945 p 331 transistor npn SM2150AM SM1150AM c945 p 331 transistor SMBJ11CA 2sd2142 SM4005A SSG8 pzt649
    Text: Table of Contents Diodes Rectifier Schottky Rectifier 》Low VF Schottky Rectifier C1 - C5 Fast Rectifier D1 - D3 Low Loss Super Fast Bridge E1 - E3 F1 High Efficiency G1 - G4 Schottky H1 - H3 Switching I1- I3 PiN Diode J1 Bridge Rectifier 》 Fast Bridge Rectifiers


    Original     		PDF SGSR809-A SC-59 SGSR809-B SGSR809-C SGSR809-D SGSR809-E secos gmbh c945 p 331 transistor npn SM2150AM SM1150AM c945 p 331 transistor SMBJ11CA 2sd2142 SM4005A SSG8 pzt649

    Untitled

    Abstract: No abstract text available
    Text: LL41 Vishay Semiconductors Small Signal Schottky Diode Features • For general purpose applications • This diode features low turn-on voltage and high breakdown voltage • This device is protected by a PN junction guard ring against excessive voltage,


    Original     		PDF DO-35 BAT41 AEC-Q101 2002/95/EC 2002/96/EC OD-80 GS18/10 GS08/2 LL41-GS18 LL41-GS08

    LL41-GS18

    Abstract: No abstract text available
    Text: LL41 Vishay Semiconductors Small Signal Schottky Diode Features • For general purpose applications • This diode features low turn-on voltage and high breakdown voltage • This device is protected by a PN junction guard ring against excessive voltage,


    Original     		PDF DO-35 BAT41 AEC-Q101 2002/95/EC 2002/96/EC OD-80 GS18/10 GS08/2 LL41-GS18 LL41-GS08

    Untitled

    Abstract: No abstract text available
    Text: LL41 Vishay Semiconductors Small Signal Schottky Diode Features • For general purpose applications • This diode features low turn-on voltage and high breakdown voltage • This device is protected by a PN junction guard ring against excessive voltage,


    Original     		PDF DO-35 BAT41 AEC-Q101 2002/95/EC 2002/96/EC OD-80 GS18/10 GS08/2 LL41-GS18 LL41-GS08

    Untitled

    Abstract: No abstract text available
    Text: LL41 Vishay Semiconductors Small Signal Schottky Diode Features • For general purpose applications • This diode features low turn-on voltage and high breakdown voltage • This device is protected by a PN junction guard ring against excessive voltage,


    Original     		PDF DO-35 BAT41 AEC-Q101 2002/95/EC 2002/96/EC OD-80 GS18/10 GS08/2 2011/65/EU 2002/95/EC.

    BAT41

    Abstract: LL41 ll41 foot print
    Text: LL41 Vishay Semiconductors Small Signal Schottky Diode Features • For general purpose applications • This diode features low turn-on voltage and high breakdown voltage • This device is protected by a PN junction guard ring against excessive voltage,


    Original     		PDF DO-35 BAT41 AEC-Q101 2002/95/EC 2002/96/EC OD-80 GS18/10 GS08/2 11-Mar-11 BAT41 LL41 ll41 foot print

    BAT41

    Abstract: LL41
    Text: BAT41 Small-Signal Diode Schottky Diode Features For general purpose applications. This diode features low turn-on voltage and high breakdown voltage. This device is protected by a PN junction guard ring against excessive voltage, such as electrostatic discharges


    Original     		PDF BAT41 DO-35 100uA 100OC 200mA 300uS BAT41 LL41

    Untitled

    Abstract: No abstract text available
    Text: LL41 www.vishay.com Vishay Semiconductors Small Signal Schottky Diode FEATURES • For general purpose applications • This diode features low turn-on voltage and high breakdown voltage • This device is protected by a PN junction guardring against excessive voltage, such as


    Original     		PDF DO-35 BAT41 OD-80 AEC-Q101 GS18/10K 10K/box GS08/2 2002/95/EC. 2002/95/EC 2011/65/EU.

    Untitled

    Abstract: No abstract text available
    Text: BAT41 Small-Signal Diode Schottky Diode Features ‹ For general purpose applications. ‹ This diode features low turn-on voltage and high breakdown voltage. This device is protected by a PN junction guard ring against excessive voltage, such as electrostatic discharges


    Original     		PDF BAT41 DO-35 100uA 100OC 200mA 300uS

    BAT41

    Abstract: DO35 LL41 general semiconductor DIODE SOD80
    Text: LL41 Vishay Semiconductors Small Signal Schottky Diode Features • For general purpose applications • This diode features low turn-on voltage e2 and high breakdown voltage • This device is protected by a PN junction guard ring against excessive voltage, such as


    Original     		PDF BAT41 2002/95/EC 2002/96/EC GS18/10 GS08/2 18-Jul-08 BAT41 DO35 LL41 general semiconductor DIODE SOD80

    BAT41

    Abstract: DO35 LL41
    Text: LL41 Vishay Semiconductors Small Signal Schottky Diode Features • For general purpose applications • This diode features low turn-on voltage e2 and high breakdown voltage • This device is protected by a PN junction guard ring against excessive voltage, such as


    Original     		PDF BAT41 2002/95/EC 2002/96/EC GS18/10 GS08/2 08-Apr-05 BAT41 DO35 LL41

    SOD80 diode Marking Code AA

    Abstract: Schottky DIODE LL41 LL41-GS18
    Text: LL41 VISHAY Vishay Semiconductors Schottky Diode Features • For general purpose applications • This diode features low turn-on voltage and high break-down voltage. • This device is protected by a PN junction guard ring against excessive voltage, such as electrostatic discharges.


    Original     		PDF DO-35 BAT41. OD-80) LL41-GS18 LL41-GS08 D-74025 16-Dec-03 SOD80 diode Marking Code AA Schottky DIODE LL41

    MINI-MELF DIODE green CATHODE

    Abstract: BAT41 LL41 3501A glass diode color codes
    Text: LL41 Schottky Diode Features MiniMELF SOD-80C Cathode Band .063 (1.6) Dia. .051 (1.3) .146 (3.7) .130 (3.3) .019 (0.48) .011 (0.28) Dimensions in inches and (millimeters) • For general purpose applications • This diode features low turn-on voltage and high


    Original     		PDF OD-80C) DO-35 BAT41. D1/10K 200mA MINI-MELF DIODE green CATHODE BAT41 LL41 3501A glass diode color codes

    LL41-GS18

    Abstract: No abstract text available
    Text: LL41 VISHAY Vishay Semiconductors Small Signal Schottky Diode Features • For general purpose applications • This diode features low turn-on voltage and high break-down voltage. • This device is protected by a PN junction guard ring against excessive voltage, such as electrostatic discharges.


    Original     		PDF DO-35 BAT41. OD-80) LL41-GS18 LL41-GS08 D-74025 30-Sep-04

    SOD123 bas85

    Abstract: BAT54 SOD123 DIODE BAT65 BAT41
    Text: SCHOTTKY BARRIER SWITCHING DIODES SINGLE AND DUAL DIODES SCHOTTKY DIODE FUNCTIONAL EQUIVALENTS PART NO. GEN SEMI EQUIV. OUTLINE 1N6263 SD101AW SOD123 BAR18 BAS70 SOT23 BAR43 BAT54 SOT23 BAR43A BAT54A DUAL SOT23 BAR43C BAT54C DUAL SOT23 BAR43S BAT54S DUAL SOT23


    Original     		PDF 1N6263 SD101AW OD123 BAR18 BAS70 BAR43 BAT54 BAR43A BAT54A BAR43C SOD123 bas85 BAT54 SOD123 DIODE BAT65 BAT41

    BAT41

    Abstract: LL41
    Text: LL41 SCHOTTKY BARRIER DIODE MiniMELF SOD-80C VRRM : 100V Cathode Mark φ 0.063 (1.64) FEATURES : 0.055 (1.40) • For general purpose applications • This diode features low turn-on voltage and high breakdown voltage. This device is protected by a PN junction guard ring against excessive voltage,


    Original     		PDF OD-80C) DO-35 BAT41. 200mA BAT41 LL41

    Untitled

    Abstract: No abstract text available
    Text: LL41 SCHOTTKY BARRIER DIODE MiniMELF SOD-80C VRRM : 100V Cathode Mark φ 0.063 (1.64) FEATURES : 0.055 (1.40) • For general purpose applications • This diode features low turn-on voltage and high breakdown voltage. This device is protected by a PN junction guard ring against excessive voltage,


    Original     		PDF OD-80C) DO-35 BAT41. 200mA

    Untitled

    Abstract: No abstract text available
    Text: BAT41 www.vishay.com Vishay Semiconductors Small Signal Schottky Diode FEATURES • For general purpose applications • This diode features low turn-on voltage and high breakdown voltage. This device is protected by a PN junction guard ring against excessive


    Original     		PDF BAT41 AEC-Q101 DO-35 TR/10K 50K/box TAP/10K 2002/95/EC. 2002/95/EC 2011/65/EU.

    Untitled

    Abstract: No abstract text available
    Text: BAT41 www.vishay.com Vishay Semiconductors Small Signal Schottky Diode FEATURES • For general purpose applications • This diode features low turn-on voltage and high breakdown voltage. This device is protected by a PN junction guard ring against excessive


    Original     		PDF BAT41 AEC-Q101 DO-35 TR/10K 50K/box TAP/10K 2002/95/EC. 2002/95/EC 2011/65/EU.

    Untitled

    Abstract: No abstract text available
    Text: BAT41 Vishay Semiconductors Small Signal Schottky Diode Features • For general purpose applications • This diode features low turn-on voltage and high breakdown voltage. This device is protected by a PN junction guard ring against excessive voltage, such as


    Original     		PDF BAT41 AEC-Q101 2002/95/EC 2002/96/EC DO-35 TR/10 TAP/10 18-Jul-08

    Untitled

    Abstract: No abstract text available
    Text: BAT41 Vishay Semiconductors Small Signal Schottky Diode Features • For general purpose applications • This diode features low turn-on voltage and high breakdown voltage. This device is protected by a PN junction guard ring against excessive voltage, such as


    Original     		PDF BAT41 AEC-Q101 2002/95/EC 2002/96/EC DO-35 TR/10 TAP/10 2011/65/EU 2002/95/EC.

    Untitled

    Abstract: No abstract text available
    Text: BAT41 Vishay Semiconductors Small Signal Schottky Diode Features • For general purpose applications • This diode features low turn-on voltage and high breakdown voltage. This device is protected by a PN junction guard ring against excessive voltage, such as


    Original     		PDF BAT41 AEC-Q101 2002/95/EC 2002/96/EC DO-35 TR/10 TAP/10 11-Mar-11

    Untitled

    Abstract: No abstract text available
    Text: BAT41 Vishay Semiconductors Small Signal Schottky Diode Features • For general purpose applications • This diode features low turn-on voltage and high breakdown voltage. This device is protected by a PN junction guard ring against excessive voltage, such as


    Original     		PDF BAT41 AEC-Q101 2002/95/EC 2002/96/EC DO-35 TR/10 TAP/10 2011/65/EU 2002/95/EC.