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    SCHOTTKY MARKING JT Search Results

    SCHOTTKY MARKING JT Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    CUHS20S60 Toshiba Electronic Devices & Storage Corporation Schottky Barrier Diode (SBD), 60 V, 2.0 A, US2H Visit Toshiba Electronic Devices & Storage Corporation
    CUHS20F60 Toshiba Electronic Devices & Storage Corporation Schottky Barrier Diode (SBD), 60 V, 2.0 A, US2H Visit Toshiba Electronic Devices & Storage Corporation
    CUHS15S60 Toshiba Electronic Devices & Storage Corporation Schottky Barrier Diode (SBD), 60 V, 1.5 A, US2H Visit Toshiba Electronic Devices & Storage Corporation
    CUHS15F60 Toshiba Electronic Devices & Storage Corporation Schottky Barrier Diode (SBD), 60 V, 1.5 A, US2H Visit Toshiba Electronic Devices & Storage Corporation
    TRS8E65H Toshiba Electronic Devices & Storage Corporation SiC Schottky Barrier Diode (SBD), 650 V, 8 A, TO-220-2L Visit Toshiba Electronic Devices & Storage Corporation

    SCHOTTKY MARKING JT Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    marking JY sot-23

    Abstract: sot-23 Marking 3D BAT34 LV4, SMD SOT-346 sot-23 Marking B1 SR715F SMD23 bat54 sot-323 B4 SOD-123
    Text: E L E C T R O N I C Device Marking of Surface Mount Schottky July 2007 /Rev. 1 Part Number Package Marking Part Number Package Marking SR520G-30 SOD-723 2 SR651H-40 SOD-323 JT SR521G-30 SOD-723 3 BAT54T SOT-416 TS SR751G-40 SOD-723 5 BAT54TA SOT-416 TT SR501G-40


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    PDF SR520G-30 OD-723 SR651H-40 OD-323 SR521G-30 BAT54T OT-416 SR751G-40 marking JY sot-23 sot-23 Marking 3D BAT34 LV4, SMD SOT-346 sot-23 Marking B1 SR715F SMD23 bat54 sot-323 B4 SOD-123

    JTR1611-001

    Abstract: XBS203V17
    Text: XBS203V17 JTR1611-001 Schottky Barrier Diode, 2A, 30V Type •FEATURES ■APPLICATIONS Forward Voltage : VF=0.35V TYP. ●Rectification Forward Current : IF(AV)=2A ●Protection against reverse connection of battery Repetitive Peak Reverse Voltage : VRM=30V


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    PDF XBS203V17 JTR1611-001 JTR1611-001 XBS203V17

    ch340s

    Abstract: MARKING JW SOT-23 marking 3U 3T 3C diode 3E 3G BAT54BDWD1PT BA5 marking BA6 marking transistor marking lv4 ch740h40 kl3 59 MF sot-23
    Text: SURFACE MOUNT DEVICES FOR HYBRID APPLICATIONS PLASTIC MATERIAL USED CARRIES UL 94V-0 TYPE Maximum Maximum Maximum Maximum Reverse Peak Average Forward Peak Current Reverse Rectified Surge Current Marking @ 25°C TA Voltage Current @ 1S IO IFM Surge IR


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    PDF CH025S-40PT CH43H-30PT CH035H-20PT CH035H-30PT CH035H-40PT CH015H-40PT CH015H-50PT CH015H-60PT CH157H-70PT BAT43BPT ch340s MARKING JW SOT-23 marking 3U 3T 3C diode 3E 3G BAT54BDWD1PT BA5 marking BA6 marking transistor marking lv4 ch740h40 kl3 59 MF sot-23

    MMBT3904DW

    Abstract: No abstract text available
    Text: WILLAS FM120-M+ MMBT3904DW1T1 THRU Transistor Dual General 1.0A SURFACE MOUNTPurpose SCHOTTKY BARRIER RECTIFIERS -20V- 200V FM1200-M Pb Free Produc SOD-123+ PACKAGE Package outline Features • Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance.


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    PDF OD-123+ FM120-M+ MMBT3904DW1T1 FM1200-M OD-123H 23/SOT FM120-MH FM130-MH FM140-MH MMBT3904DW

    Diode LT 02

    Abstract: ERB83-006 T460 T760 T930
    Text: ERB83-006 2A : Outline D raw ings SCHOTTKY BARRIER DIODE : Features • vF : Marking Low VF Ä7-3-K : £R Super high speed switching. Color code : •SÄJfcS High reliability by planer design Abridged type name Voltage cioss Oy rnq : Applications Lot No.


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    PDF ERB83-006 I95t/R89 Shl50 Diode LT 02 T460 T760 T930

    Marking 3D TO-236AB

    Abstract: T3D 87 pro-electron T3D zener ZENER A12 T3D 91 t3d 96 T3D 77
    Text: SPRAGUE/SENICOND 8514019 GROUP TBD SPRAG UE. D • SS13Û5D □003t.3D S E M IC O N D S / IC S 93D 5 03630 T ^ { \ r ^ f O SMALL-OUTLINE D IO D ES Pro-Electron Device Types ELECTRICAL CHARACTERISTICS at TA = 25°C vf Device Type Description Marking BAR18 Schottky


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    PDF BAR18 BAS16 BAS19 BAS21 BAV701 238BMM 23881N Marking 3D TO-236AB T3D 87 pro-electron T3D zener ZENER A12 T3D 91 t3d 96 T3D 77

    A83-006

    Abstract: ERA83-006 T151 T460 T760 T930 marking code a83
    Text: ERA83-006 ia : Outline Drawings SCHOTTKY BARRIER DIODE Features • ftv F H S / jv : Marking low vf t r i ­ -a - K : fl Super high speed sw itching. color code : White •EH: ? 7 Voltage class High reliability by planer d e s ig n . D y b Nq in s e rtio n .


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    PDF I-125 l95t/R89 Shl50 A83-006 ERA83-006 T151 T460 T760 T930 marking code a83

    TRA1

    Abstract: No abstract text available
    Text: SCHOTTKY BARRIER DIODE EP05Q04 0.s a /40 v FEA TU RES OJEDEC SOD-123 Package oV ery Low profile 1.1mm Max o High Surge Capability o Low Thermal Resistance OUL 94, VO O Packaged in 8mm tape Device Marking ~ ~ _Month of Mfg. A=Jan. B = Feb.—L=Dec. Year of Mfg. 7=1997


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    PDF EP05Q04 OD-123 bblS123 TRA1

    marking 2U 77 diode

    Abstract: marking DIODE 2U 04 marking code IAM 12CT ERC84-009 diode marking code 7-7-7-7 marking 2U diode marking DIODE 2U
    Text: ERC84-009I3A K • fl- B '+ ii : Outline Drawings SCHOTTKY BARRIER DIODE Features • 1&VF Low VF W$z7j\ : Marking Ä 7 “- 3 - K : f f Color code : Blue Super high speed switching. • 7 V - * - f t « C J&ftflH Ktt High reliability by planer design. Abridged type nam e'"'" Î 1


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    PDF ERC84-009 marking 2U 77 diode marking DIODE 2U 04 marking code IAM 12CT diode marking code 7-7-7-7 marking 2U diode marking DIODE 2U

    ERA81-004

    Abstract: T810 ERA8
    Text: E RA81-004 1a i'a-yl'lF— ' O J T ÿ ' f j K • f l-B '+ '/i : Outline Drawings SCHOTTKY BARRIER ■ t t f t : Features • te V F ■ S Low VF : Marking tjv • x -r Ä 7 “ 3 —K : Super high speed switching. C o lo r c o d e ffl : S ilv e r High reliability by planer design


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    PDF ERA81-004 eaTS30 EmM-TmiS19* I95t/R89) T810 ERA8

    Untitled

    Abstract: No abstract text available
    Text: SBL830 - SBL860 VISHAY 8.0A SCHOTTKY BARRIER RECTIFIER I[l ITEMIl / pow eb sehconw ictor Features TO-22QAC JT D _ L ) Min Max A 14.22 15.88 B 9.65 10.67 C 2.54 3.43 D 5.84 6.86 12.70 14.73 G Mechanical Data_ 'I Case: Molded Plastic Terminals: Plated Leads, Solderable per


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    PDF SBL830 SBL860 O-22QAC MIL-STD-202, DS23044 SBL830-SBL860

    Untitled

    Abstract: No abstract text available
    Text: 1GWJ42 T O SH IB A TOSHIBA SCHOTTKY BARRIER RECTIFIER SCHOTTKY BARRIER TYPE Unit in mm HIGH SPEED RECTIFIER APPLICATIONS • • • Average Forward Current : I jt AV — (Ta = 52°C) Reverse Recovery Time : trr = 35ns (MAX.) Low Forward Voltage : Vf M ~ 0.55V (MAX.)


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    PDF 1GWJ42

    marking code aaat

    Abstract: AX057 marking aaat sg diode code marking diode marking code U6 46t marking diode MARKING CODE sg d1ns6
    Text: Schottky Barrier Diode Axial Diode OUTLINE Package I AX057 D1NS6 * I 60 V 1A i ÜJ Feature • Tj=15CfC • T j= 1 5 0 °C • P rrsm P K ^ V î/x S ü E • P rrsm <b2.6 »2 Rating M Main Use • Switching Regulator • D C /D c u y jt— ? Unit : mm Weight 0.19« (Typ >


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    PDF 15ffC AX057 K52mm CJ533-1 marking code aaat AX057 marking aaat sg diode code marking diode marking code U6 46t marking diode MARKING CODE sg d1ns6

    SG DIODE MARKING

    Abstract: 2KV DIODE diode sg 45
    Text: Schottky Barrier Diode Twin Diode m n n . o u tlin e Package ! FTO-220G S G 20T C 1 5 M U nit : mm W eight 1.54g Typ w h jtH H W 15 0 V 2 0 A 4.5 Feature >Tj=150°C • Tj=150°C 1 High lo Rating » Full Molded 1 Low Ir=30|jA >7H Æ - J b K •ÎSIr=30|jA


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    PDF FTO-220G 50IIz J533-1) SG DIODE MARKING 2KV DIODE diode sg 45

    Alpha Industries SOD323 Marking

    Abstract: 069 marking SMS3939-026 MARKING EG SCHOTTKY MARKING jt SMS3926-022 SMS3926-023 SMS3927-022 SMS3928-022 SMS3929-021
    Text: Surface Mount Schottky Quad Mixer Diodes EBAlpha Features • Tight Parameter Distribution ■ Available as Ring Quads, Crossover Quads, Bridge Quads and Octoquads ■ 100% DC Tested ■ Designed for High Volume Commercial Applications ■ Available in Tape and Reel Packaging


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    PDF OT-143 SMS3926 SMS3927 SMS3928 OT-143 6/99A Alpha Industries SOD323 Marking 069 marking SMS3939-026 MARKING EG SCHOTTKY MARKING jt SMS3926-022 SMS3926-023 SMS3927-022 SMS3928-022 SMS3929-021

    DIODE d3s

    Abstract: MARKING MM d3s diode d3s4m D3S4 d3s4m diode diode MARKING CODE A9
    Text: Schottky Barrier Diode Axial Diode OUTLINE D3S4M 40V 3A Feature • Tj=15CfC • Tj=150°C • P r r sm P K ^ V î/ x S ü E • P rrsm Rating Main Use • Sw itching Regulator • DC/D c u y jt— ? • D C /D C Converter • W M . f - h s O A t lf g • Hom e Appliance, G am e, Office Automation


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    PDF 15ffC -40-a It501 J533-1 DIODE d3s MARKING MM d3s diode d3s4m D3S4 d3s4m diode diode MARKING CODE A9

    smd code marking LF sot23

    Abstract: AI P5G
    Text: Product specification Philips Semiconductors Schottky barrier double diodes PMBD352; PMBD353 PINNING FEATURES • Low forward voltage PIN • Small SMD package DESCRIPTION PMBD352 see Fig.2 • Low capacitance. 1 APPLICATIONS • UHF mixer 2 ai k2 3 ki, a2


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    PDF PMBD352; PMBD353 PMBD352 PMBD352 MGC487 PMBD353 smd code marking LF sot23 AI P5G

    marking D63

    Abstract: No abstract text available
    Text: Central CMDD6263 Semiconductor Corp. SUPERmini™ HIGH VOLTAGE SCHOTTKY DIODE FEATURES: • HIGH VOLTAGE 70V • LOW FORWARD VOLTAGE • PART OF CENTRAL'S SPACE SAVING SUPERmini'" SURFACE MOUNT PACKAGE FAMILY DESCRIPTION: The CENTRAL SEMICONDUCTOR CMDD6263 is a High Voltage, low Vp, Silicon Schottky diode in a


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    PDF CMDD6263 100ii CPD92, 31-October OD-323 OD-323 marking D63

    Untitled

    Abstract: No abstract text available
    Text: Central CMSSH-3 CMSSH-3A CMSSH-3C CMSSH-3S Sem iconductor Corp. SUPER-MINI SCHOTTKY DIODES DESCRIPTION The CENTRAL SEMICONDUCTOR CMSSH-3 Series types are Silicon Schottky diodes, epoxy molded in a super-mini surface mount package, designed forfastswitching applications requiring


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    PDF 100mA

    1N5822

    Abstract: No abstract text available
    Text: Philips Semiconductors APX fc,b53T31 00EbT34 Tflb Controlled avalanche Schottky Product specification N5820ID/21ID/22ID barrier diodes N AMER PHILIPS/DISCRETE DESCRIPTION Schottky barrier diodes in hermetically sealed SOD84A Implosion Diode ID envelope,


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    PDF b53T31 00EbT34 N5820ID/21ID/22ID OD84A 1N5820 1N5821 1N5822 1N5822

    MARKING 25J

    Abstract: MD3FLDL-TTL-10G MD3FLDL-TTL-15T MD3FLDL-TTL-25J MD3FLDL-TTL-70F
    Text: ENGINEERED COdPONENTS C bOE D • 33 3 32 Û 3 00007T3 G3T ■ EGC Cozu profite t^ L COM PATIBLE M ìn ì DI MULTI LOGIC DELA / # T2L inputs and outputs # Delays stable and precise # 8-pin DIP package Leads - thru-hole, J, Gull Wing or Tucked # Available in delays from 5 to 100ns - each


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    PDF 3333SÃ 100ns technologies3FLDL-TTL-17 MD3FLDL-TTL-75 MD3FLDL-TTL-18 MD3FLDL-TTL-80 MD3FLDL-TTL-19 MD3FLDL-TTL-85 MD3FLDL-TTL-20 MD3FLDL-TTL-90 MARKING 25J MD3FLDL-TTL-10G MD3FLDL-TTL-15T MD3FLDL-TTL-25J MD3FLDL-TTL-70F

    Untitled

    Abstract: No abstract text available
    Text: ENGINEERED COdPONENTS C bOE D • 33 3 32 Û 3 00007T3 G3T ■ EGC Cozu profite t^ L COMPATIBLE M ìn ì DI MULTI LOGIC DELA / # T2L inputs and outputs # Delays stable and precise # 8-pin DIP package Leads - thru-hole, J, Gull Wing or Tucked # Available in delays from 5 to 100ns - each


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    PDF 00007T3 100ns C/101592

    Untitled

    Abstract: No abstract text available
    Text: Whnl mL'nM HP Ea Wc kL aE rTdT Surface Mount Zero Bias Schottky Detector Diodes Technical Data Features • Surface M ount SOT-23/ SOT-143 Package • H igh D etection Sensitivity: Package Lead Code Identification Top V iew 40 mV/|iW at 915 MHz 30 mV/jiW at 2.45 GHz


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    PDF OT-23/ OT-143 HSMS-285X HSMS-285X OT-23 OT143 DD127Ã 5963-2333E 5963-5030E

    ed marking code transient

    Abstract: ml marking SRF2020
    Text: TAIWAN SEMICONDUCTOR % SRF2020 - SRF20150 Isolated 20.0 AMPS. Schottky Barrier Rectifiers ITO-220A B RoHS C O M P L IA N C E .nu*.;: _azuw.:\kvc uw . ¿0\W} I m;r. n;r>>./ jtr.«pi x - /T Features 4-v+ ❖ 4- F or su rfa ce m ou nted application Lo w po w e r loss, high e fficie n cy


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    PDF SRF2020 SRF20150 ITO-220AB ITO-220AB MIL-STD-750, 35rnm) SRF20150) ed marking code transient ml marking