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    SCR PNP NPN EMITTER AREA Search Results

    SCR PNP NPN EMITTER AREA Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    CS-SASDDP8282-000.5 Amphenol Cables on Demand Amphenol CS-SASDDP8282-000.5 29 position SAS to SATA Drive Connector Dual Data Lanes Cable 0.5m Datasheet
    CS-SASDDP8282-001 Amphenol Cables on Demand Amphenol CS-SASDDP8282-001 29 position SAS to SATA Drive Connector Dual Data Lanes Cable 1m Datasheet
    QE82527 Rochester Electronics LLC LAN Controller, CMOS, Visit Rochester Electronics LLC Buy

    SCR PNP NPN EMITTER AREA Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Z3N-TB22

    Abstract: LM12-3004PA lm18-3005na PRINCIPLE OF TEMPERATURE SENSOR LM35 LM18-3008PA LM12-3004NA LM18-3008PC BZJ-211 LM18-3008NA LM8-3002NA
    Text: Company Profile GREEGOO Electric Co., Ltd, located in Wenzhou, the electric capital of China, is specialized in developing, manufacturing and distributing sensors covering proximity sensors, photoelectric sensors, speed sensors, reed sensors, color mark sensors, area secure sensors, hall sensors and optic fabric sensors etc. along with about


    Original     		PDF 2000components. ISO9001 secureC90-250V DC10-30V AC90-250V Z3N-TB22 LM12-3004PA lm18-3005na PRINCIPLE OF TEMPERATURE SENSOR LM35 LM18-3008PA LM12-3004NA LM18-3008PC BZJ-211 LM18-3008NA LM8-3002NA

    ic mm74hc

    Abstract: triggering scr with microprocessor cmos scr AN-339 national MM74HC SCR TRIGGER PULSE circuit AN-339 CD4000 MM74C 74HC
    Text: Fairchild Semiconductor Application Note 339 November 1987 INTRODUCTION SCR latch-up is a parasitic phenomena that has existed in circuits fabricated using bulk silicon CMOS technologies. The latch-up mechanism, once triggered, turns on a parasitic SCR internal to CMOS circuits which essentially shorts VCC


    Original     		PDF MM54HC/MM74HC ic mm74hc triggering scr with microprocessor cmos scr AN-339 national MM74HC SCR TRIGGER PULSE circuit AN-339 CD4000 MM74C 74HC

    triggering scr with microprocessor

    Abstract: cmos function generator using cd4049 ic mm74hc national semiconductor CD4000 scr Power Supply Schematic Diagram MM74HC cmos scr CD4049 Application AN-339 national AN-339
    Text: INTRODUCTION SCR latch-up is a parasitic phenomena that has existed in circuits fabricated using bulk silicon CMOS technologies The latch-up mechanism once triggered turns on a parasitic SCR internal to CMOS circuits which essentially shorts VCC to ground This generally destroys the CMOS IC or at


    Original     		PDF MM54HC MM74HC triggering scr with microprocessor cmos function generator using cd4049 ic mm74hc national semiconductor CD4000 scr Power Supply Schematic Diagram cmos scr CD4049 Application AN-339 national AN-339

    SM912LV

    Abstract: SM912FQD SM2A912 MBCC-306 SM912D SM912F SM91R SMA91EFQD mini spst switch SM2A912D
    Text: VALU-BEAM 912 Series AC- and DC-powered sensors with solid-state outputs Features • Choose models for 10 to 30V dc or 24 to 250V ac operation. • DC models have bipolar solid-state outputs: one NPN sinking and one PNP (sourcing). • AC models have an SPST solid-state output rated for up to 3/4 amp with simple


    Original     		PDF

    reverse-conducting thyristor

    Abstract: gto Gate Drive circuit IGCT thyristor IGCT mitsubishi Usha Rectifier Emitter Turn-Off thyristor eto thyristor GTO triac HEXFET Power MOSFET designer manual MOS-Controlled Thyristor
    Text: I Power Electronic Devices 1 Power Electronics Kaushik Rajashekara, Sohail Anwar, Vrej Barkhordarian, Alex Q. Huang Overview • Diodes • Schottky Diodes • Thyristors • Power Bipolar Junction Transistors • MOSFETs • General Power Semiconductor Switch Requirements • Gate


    Original     		PDF MCT00, reverse-conducting thyristor gto Gate Drive circuit IGCT thyristor IGCT mitsubishi Usha Rectifier Emitter Turn-Off thyristor eto thyristor GTO triac HEXFET Power MOSFET designer manual MOS-Controlled Thyristor

    digital triggering scr

    Abstract: zener diode A36 regulated bipolar power supply connection 12V SCR FAST SWITCHING TO 48 SCR FAST SWITCHING design of mosfet based power supply detailed circuit on high voltage off scr High power SCR power supply 12v, 7v, 5v mosfet power supply
    Text:  Application Note MSAN-107 Understanding and Eliminating Latch-Up in CMOS Applications ISSUE 1 Contents • Semiconductor Device Considerations • Background on SCR’s • Parasitic Bipolar Structures in the ISO-CMOS Topology • Output SCR Structures


    Original     		PDF MSAN-107 digital triggering scr zener diode A36 regulated bipolar power supply connection 12V SCR FAST SWITCHING TO 48 SCR FAST SWITCHING design of mosfet based power supply detailed circuit on high voltage off scr High power SCR power supply 12v, 7v, 5v mosfet power supply

    MD74SC540AC

    Abstract: MSAN-107 A43 ZENER DIODE
    Text:  Application Note MSAN-107 Understanding and Eliminating Latch-Up in CMOS Applications ISSUE 1 Contents • • • • • • • • • • • • • • Semiconductor Device Considerations Background on SCR’s Parasitic Bipolar Structures in the ISO-CMOS


    Original     		PDF MSAN-107 MD74SC540AC MSAN-107 A43 ZENER DIODE

    IGBT SCHEMATIC

    Abstract: motorola scr cross reference MGW20N60D power BJT PNP BJT npn motorola mosfet base induction heat circuit BJT characteristics GATE ASSISTED TURN-OFF THYRISTORS BJT isolated Base Drive circuit AN1541
    Text: MOTOROLA SEMICONDUCTOR APPLICATION NOTE Order this document by AN1541/D AN1541 Introduction to Insulated Gate Bipolar Transistors Prepared by: Jack Takesuye and Scott Deuty Motorola Inc. INTRODUCTION As power conversion relies more on switched applications,


    Original     		PDF AN1541/D AN1541 AN1541/D* IGBT SCHEMATIC motorola scr cross reference MGW20N60D power BJT PNP BJT npn motorola mosfet base induction heat circuit BJT characteristics GATE ASSISTED TURN-OFF THYRISTORS BJT isolated Base Drive circuit AN1541

    MHP-P32Q

    Abstract: MHP-LR33Q MHP-DR31L MHP-F32Q MHP-FR33L Photoelectric combination connector MHP-C133L MHP-TLE30L MHP-TLR33L MHP-D32L
    Text: Photoelectric Sensors/Controls Miniature High Performance AC and DC Sensors FEATURES ɀ Withstands high pressure washdown 1,200 psi which simulates cleaning procedure used in food and beverage processing, exceeding NEMA 6P and IP67 ɀ Ultrasonically welded lens, plus fully


    Original     		PDF 15-turn MHP-P32Q MHP-LR33Q MHP-DR31L MHP-F32Q MHP-FR33L Photoelectric combination connector MHP-C133L MHP-TLE30L MHP-TLR33L MHP-D32L

    zener 11B1

    Abstract: zener diode A36 a39 zener diode A-31 MD74SC540AC MSAN-107 A43 ZENER DIODE diode ZENER A37 TRANSISTOR a32
    Text: Application Note MSAN-107 Understanding and Eliminating Latch-Up in CMOS Applications ISSUE 1 Contents • • • • • • • • • • • • • • Semiconductor Device Considerations Background on SCR’s Parasitic Bipolar Structures in the ISO-CMOS


    Original     		PDF MSAN-107 zener 11B1 zener diode A36 a39 zener diode A-31 MD74SC540AC MSAN-107 A43 ZENER DIODE diode ZENER A37 TRANSISTOR a32

    a37 zener

    Abstract: No abstract text available
    Text:  Application Note MSAN-107 Understanding and Eliminating Latch-Up in CMOS Applications ISSUE 1 Contents • • • • • • • • • • • • • • Semiconductor Device Considerations Background on SCR’s Parasitic Bipolar Structures in the ISO-CMOS


    Original     		PDF MSAN-107 a37 zener

    Untitled

    Abstract: No abstract text available
    Text: AC/DC Supply with Timer Models E3A2 Slim Sensor with Plug-in Outputs, Built-in Time Delays • ■ ■ ■ ■ ■ Plug-in replaceable outputs Light-ON/Dark-ON operation, switch selectable Optional solid-state outputs Polarized diffuse and through-beam models


    Original     		PDF E3A2-10M4 E3A2-DS70M4 E3A2-10M4T E3A2-DS70M4T E39-R1 E39-L7 1-800-55-OMRON

    difference between IGBT and MOSFET IN inverter

    Abstract: IGBT SCHEMATIC use igbt for 3 phase induction motor rectifier pwm igbt DATA SHEET OF IGBT mosfet base induction heat circuit POWER BJTs what is THERMAL RUNAWAY IN RECTIFIER MOSFET power transistor bjt 1000 a n mosfet depletion 1A sink
    Text: AN1541/D Introduction to Insulated Gate Bipolar Transistors Prepared by: Jack Takesuye and Scott Deuty Motorola Inc. http://onsemi.com APPLICATION NOTE INTRODUCTION As power conversion relies more on switched applications, semiconductor manufacturers need to create


    Original     		PDF AN1541/D r14525 difference between IGBT and MOSFET IN inverter IGBT SCHEMATIC use igbt for 3 phase induction motor rectifier pwm igbt DATA SHEET OF IGBT mosfet base induction heat circuit POWER BJTs what is THERMAL RUNAWAY IN RECTIFIER MOSFET power transistor bjt 1000 a n mosfet depletion 1A sink

    E3A2-DS70M4T

    Abstract: E3A2-R3M4D G3KD 10M4D E3A2-R3M4T 10M4T E3A2-10M4D E3A2 E3A2-10M4T E3A2-R3M4
    Text: E3A2 E3A2 AC/DC Supply with Timer Models E3A2 Slim Sensor with Plug-in Outputs, Built-in Time Delays Plug-in replaceable outputs • Light-ON/Dark-ON operation, switch selectable ■ Optional solid-state outputs ■ Polarized diffuse and through-beam models


    Original     		PDF E3A2-10M4 E3A2-DS70M4 E3A2-10M4T E39-R1 E39-L7 1-800-55-OMRON E3A2-DS70M4T E3A2-R3M4D G3KD 10M4D E3A2-R3M4T 10M4T E3A2-10M4D E3A2 E3A2-10M4T E3A2-R3M4

    zener 11B1

    Abstract: A-31 MD74SC540AC MSAN-107 Schottky Diodes A36
    Text: Application Note MSAN-107 Understanding and Eliminating Latch-Up in CMOS Applications ISSUE 1 Contents • • • • • • • • • • • • • • Semiconductor Device Considerations Background on SCR’s Parasitic Bipolar Structures in the ISO-CMOS


    Original     		PDF MSAN-107 zener 11B1 A-31 MD74SC540AC MSAN-107 Schottky Diodes A36

    mj15052

    Abstract: mj-15052 CFL UPS 45 W circuit schematic diagram MJ15052 Motorola schematic diagram UPS ica MJ15003 internal diagram power supply tester schematic diagram pulse generator MC14001 AT330 transistor MJ11032
    Text: O AN930 MOTOROLA Semiconductor Products Inc. Application Note HIGH VOLTAGE, HIGH CURRENT, NONDESTRUCTIVE FBSOA TESTING By Al Pshaenich This Application Note provides specifications form test instrumeAt whichcan be used to perform non-destructive testing of


    Original     		PDF AN930 AN930/D hull111111 mj15052 mj-15052 CFL UPS 45 W circuit schematic diagram MJ15052 Motorola schematic diagram UPS ica MJ15003 internal diagram power supply tester schematic diagram pulse generator MC14001 AT330 transistor MJ11032

    Basic principle of AC to DC conversion using SCR

    Abstract: SCR TRANSISTOR 6NTP2A high power Triode for induction heating Semiconductor Devices, Diode, and SCR Catalog SCR gate Control IC asymmetrical SCR ericsson telecom catalog A101 TRANSISTOR SCR 214
    Text: TISP Types Introduction This section covers the overvoltage protection functions and Bourns TISP® Totally Integrated Surge Protector thyristor SPDs (Surge Protective Devices) in terms of evolution, function, silicon structure, electrical characteristics, electrical rating and device


    Original     		PDF 8200M, 8201M 40xxL1BJ, 40xxH1BJ 3700F3, 4700F3 4360H3BJ Basic principle of AC to DC conversion using SCR SCR TRANSISTOR 6NTP2A high power Triode for induction heating Semiconductor Devices, Diode, and SCR Catalog SCR gate Control IC asymmetrical SCR ericsson telecom catalog A101 TRANSISTOR SCR 214

    AN918 MOTOROLA

    Abstract: AN-918 AN9320 General Electric SCR Manual 6th edition TA84-5 SCR Handbook, General electric AN918 Paralleling Power MOSFETs in Switching Applications Rudy Severns 1/AN918 MOTOROLA "scr manual"
    Text: Parallel Operation Of Semiconductor Switches Application Note June 1993 Figure 1 . The dynamic area is only a fraction of the total waveform, but it is by far the most important when it comes to parallel operation. In uninterruptable power supplies demands for current handling capability to meet load current In uninterruptable power


    Original     		PDF

    s41 hall effect sensor s41

    Abstract: sensor sr21 datalogic DATA SENSOR TLU-015 D50NK LASER ILLUMINATOR hall effect sensor s41
    Text: SENSORS, SAFETY & MEASUREMENT Short Form Catalogue 2014 I 2015 www.acdc.co.za PRODUCT PICTURE OUTPUT SPECIFICATIONS PAGE • 3 Wire VDC PNP NO-NC, NPN NO-NC 1 • 2 Wire VDC NO-NC 1 • 2 Wire VAC NO-NC 1 • Terminal Block VDC PNP NO-NC, NPN NO-NC 2 • 2 Wire VAC/VDC NO, NC


    Original     		PDF 4-20mA s41 hall effect sensor s41 sensor sr21 datalogic DATA SENSOR TLU-015 D50NK LASER ILLUMINATOR hall effect sensor s41

    grid tie inverters circuit diagrams

    Abstract: P50N05E p50n05 scr preregulator DALE RH-25 lk-343 LK-343-A-FM 1A current to 0-5v voltage converter using LM317 AN32 fet galvanically isolated LM317
    Text: Application Note 32 March 1989 High Efficiency Linear Regulators Jim Williams Introduction Linear voltage regulators continue to enjoy widespread use despite the increasing popularity of switching approaches. Linear regulators are easily implemented, and have much


    Original     		PDF 1N1183 1N916 LT1057 RH-25 115VAC an32f AN32-12 grid tie inverters circuit diagrams P50N05E p50n05 scr preregulator DALE RH-25 lk-343 LK-343-A-FM 1A current to 0-5v voltage converter using LM317 AN32 fet galvanically isolated LM317

    TISP8201HDMR-S

    Abstract: GR-1089-CORE TISP8200HDMR-S pnp npn dual emitter connected transistor k44
    Text: *R oH S CO M PL IA NT TISP8200HDM BUFFERED P-GATE SCR DUAL TISP8201HDM BUFFERED N-GATE SCR DUAL COMPLEMENTARY BUFFERED-GATE SCRS FOR DUAL POLARITY SLIC OVERVOLTAGE PROTECTION TISP820xHDM Overvoltage Protectors High Performance Protection for SLICs with +ve & -ve


    Original     		PDF TISP8200HDM TISP8201HDM TISP820xHDM Program1-41-7685510 TSP0620 TISP8201HDMR-S GR-1089-CORE TISP8200HDMR-S pnp npn dual emitter connected transistor k44

    transistor k44

    Abstract: No abstract text available
    Text: *R oH S CO M PL IA NT TISP8200HDM BUFFERED P-GATE SCR DUAL TISP8201HDM BUFFERED N-GATE SCR DUAL COMPLEMENTARY BUFFERED-GATE SCRS FOR DUAL POLARITY SLIC OVERVOLTAGE PROTECTION TISP820xHDM Overvoltage Protectors High Performance Protection for SLICs with +ve & -ve


    Original     		PDF TISP8200HDM TISP8201HDM TISP820xHDM GR-1089-CORE TSP0620 transistor k44

    transistor array K1 marking

    Abstract: bourns capacitor network transistor k44
    Text: *R oH S CO M PL IA NT TISP8200HDM BUFFERED P-GATE SCR DUAL TISP8201HDM BUFFERED N-GATE SCR DUAL COMPLEMENTARY BUFFERED-GATE SCRS FOR DUAL POLARITY SLIC OVERVOLTAGE PROTECTION TISP820xHDM Overvoltage Protectors High Performance Protection for SLICs with +ve & -ve


    Original     		PDF TISP8200HDM TISP8201HDM TISP820xHDM GR-1089-CORE IP51-781-5700 TSP0620 transistor array K1 marking bourns capacitor network transistor k44

    DALE RH-25

    Abstract: pulse transformer SCR firing circuits scr firing circuit for dc servo driver 3 phase scr firing circuit for dc servo driver Power MOS FET Gate Drive lm317 2000W mosfet power inverter dc voltage regulator using scr LM31 TL scr preregulator dc voltage regulator circuit using SCR
    Text: um TECHNOLOGY Application Note 32 March 1989 High Efficiency Linear Regulators Jim Williams Introduction Linear voltage regulators continue to enjoy widespread use despite the increasing popularity of switching ap­ proaches. Linear regulators are easily implemented, and


    OCR Scan     		PDF AD534. LT1012 rh-25 AN32-12 DALE RH-25 pulse transformer SCR firing circuits scr firing circuit for dc servo driver 3 phase scr firing circuit for dc servo driver Power MOS FET Gate Drive lm317 2000W mosfet power inverter dc voltage regulator using scr LM31 TL scr preregulator dc voltage regulator circuit using SCR