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    SCR TRANSISTOR Search Results

    SCR TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    SCR TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    scr inverter schematic circuit

    Abstract: SCR Inverter datasheet General electric SCR Power INVERTER schematic circuit scr inverter schematic inverter SCR SCR PNPN four-layer diode scr power control schematic Bipolar Junction Transistor
    Text: Latch-Up LATCH-UP CIRCUIT Latch-up is caused by an SCR Silicon Controlled Rectifier circuit. Fabrication of CMOS integrated circuits with bulk silicon processing creates a parasitic SCR structure. The behavior of this SCR is similar in principle to a true SCR. These structures result from the multiple diffusions


    Original     		PDF 14105C-001 scr inverter schematic circuit SCR Inverter datasheet General electric SCR Power INVERTER schematic circuit scr inverter schematic inverter SCR SCR PNPN four-layer diode scr power control schematic Bipolar Junction Transistor

    SCR Inverter

    Abstract: SCHEMATIC POWER SUPPLY WITH scr SCR PNPN
    Text: GENERAL INFORMATION 1 Latch-up LATCH-UP CIRCUIT Latch-up is caused by an SCR Silicon Controlled Rectifier circuit. Fabrication of CMOS integrated circuits with bulk silicon processing creates a parasitic SCR structure. The behavior of this SCR is similar in principle to a true SCR. These structures result from the multiple diffusions needed for


    Original     		PDF 14105B-1 SCR Inverter SCHEMATIC POWER SUPPLY WITH scr SCR PNPN

    Untitled

    Abstract: No abstract text available
    Text: SP724 Data Sheet SCR/Diode Array for ESD and Transient Over-Voltage Protection [ /Title SP724 /Subject (SCR/ Diode Array for ESD and Transient OverVoltage Protection) /Autho r () /Keywords (TVS, Transient Suppression, Protection, Automotive, Load Dump,


    Original     		PDF SP724 SP724 20VDC. 180mm OT-23 EIA-481

    SP724AH

    Abstract: SP724AHT General Electric scr SOT-23 SP724 triggering scr with microprocessor SCR AUTOMOTIVE APPLICATIONS SCR C 4458 automotive SCR digital triggering scr sot-23 VX
    Text: SP724 Data Sheet SCR/Diode Array for ESD and Transient Over-Voltage Protection [ /Title SP724 /Subject (SCR/ Diode Array for ESD and Transient OverVoltage Protection) /Autho r () /Keywords (TVS, Transient Suppression, Protection, Automotive, Load Dump,


    Original     		PDF SP724 SP724 20VDC. 1-800-4-HARRIS SP724AH SP724AHT General Electric scr SOT-23 triggering scr with microprocessor SCR AUTOMOTIVE APPLICATIONS SCR C 4458 automotive SCR digital triggering scr sot-23 VX

    battery charging circuit using scr

    Abstract: scr circuit diagram SP724 SCR C 4458
    Text: [ /Title SP724 /Subject (SCR/ Diode Array for ESD and Transient OverVoltage Protection) /Autho r () /Keywords (TVS, Transient Suppression, Protection, Automotive, Load Dump, Alternator Field Decay, SP724 Data Sheet SCR/Diode Array for ESD and Transient


    Original     		PDF SP724 SP724 20VDC. 1-800-4-HARRIS battery charging circuit using scr scr circuit diagram SCR C 4458

    digital triggering scr

    Abstract: zener diode A36 regulated bipolar power supply connection 12V SCR FAST SWITCHING TO 48 SCR FAST SWITCHING design of mosfet based power supply detailed circuit on high voltage off scr High power SCR power supply 12v, 7v, 5v mosfet power supply
    Text:  Application Note MSAN-107 Understanding and Eliminating Latch-Up in CMOS Applications ISSUE 1 Contents • Semiconductor Device Considerations • Background on SCR’s • Parasitic Bipolar Structures in the ISO-CMOS Topology • Output SCR Structures


    Original     		PDF MSAN-107 digital triggering scr zener diode A36 regulated bipolar power supply connection 12V SCR FAST SWITCHING TO 48 SCR FAST SWITCHING design of mosfet based power supply detailed circuit on high voltage off scr High power SCR power supply 12v, 7v, 5v mosfet power supply

    full wave controlled rectifier using RC triggering circuit

    Abstract: 1n5760 commutation techniques of scr all types of thyristor and schematic Triacs form factors triac based ac motor speed control using light di RC snubber scr design Silicon unilateral switch Silicon unijunction transistor half wave controlled rectifier using RC triggering circuit
    Text: SECTION 2 THEORY OF THYRISTOR OPERATION Edited and Updated schematic symbol for an SCR, and Figure 2.1 b shows the P–N–P–N structure the symbol represents. In the two–transistor model for the SCR shown in Figure 2.1(c), the interconnections of the two transistors are such that


    Original     		PDF 2N6397 full wave controlled rectifier using RC triggering circuit 1n5760 commutation techniques of scr all types of thyristor and schematic Triacs form factors triac based ac motor speed control using light di RC snubber scr design Silicon unilateral switch Silicon unijunction transistor half wave controlled rectifier using RC triggering circuit

    ProtoPowerSwitch Boosterpack

    Abstract: protopowerswitch 24V 8 pins DIP relay pinout diagram AC DC transformerless power supply omron optoisolator transformerless power supply 2N5551B SRD SONGLE RELAY transformerless power supply circuit dimmer MSP430
    Text: DESIGNER CIRCUITS, LLC www.designercircuits.com Revised 3/2014 ProtoPowerSwitch Boosterpack FEATURES • AC input, Dual DC output Transformerless Power Supply Resistive Capacitive • Switching Element SPDT Relay TRIAC SCR • Zero-volt detection for phase angle firing of TRIAC/SCR


    Original     		PDF

    GR-1089-CORE

    Abstract: PEB4264 TISP8200M TISP8200MDR TISP8201M TISP8201MDR transistor k44 tip 416 transistor
    Text: TISP8200M, BUFFERED P-GATE SCR DUAL TISP8201M, BUFFERED N-GATE SCR DUAL COMPLEMENTARY BUFFERED-GATE SCRS FOR DUAL POLARITY SLIC OVERVOLTAGE PROTECTION TISP8200M & TISP8201M High Performance Protection for SLICs with +ve & -ve Battery Supplies TISP8200M D Package Top View


    Original     		PDF TISP8200M, TISP8201M, TISP8200M TISP8201M TISP8200M GR-1089-CORE PEB4264 TISP8200MDR TISP8201M TISP8201MDR transistor k44 tip 416 transistor

    DATA SHEET SCR TRANSISTOR

    Abstract: PEB4264 k44 transistor SCR 213 specifications of scr GR-1089-CORE TISP8200M TISP8200MDR TISP8201M TISP8201MDR
    Text: TISP8200M, BUFFERED P-GATE SCR DUAL TISP8201M, BUFFERED N-GATE SCR DUAL COMPLEMENTARY BUFFERED-GATE SCRS FOR DUAL POLARITY SLIC OVERVOLTAGE PROTECTION TISP8200M & TISP8201M High Performance Protection for SLICs with +ve & -ve Battery Supplies TISP8200M D Package Top View


    Original     		PDF TISP8200M, TISP8201M, TISP8200M TISP8201M TISP8200M DATA SHEET SCR TRANSISTOR PEB4264 k44 transistor SCR 213 specifications of scr GR-1089-CORE TISP8200MDR TISP8201M TISP8201MDR

    battery charging circuit using scr

    Abstract: SCR GATE DRIVER PEB4264 SCR Gate Drive GR-1089-CORE TISP8200M TISP8200MDR TISP8201M TISP8201MDR 8200M
    Text: TISP8200M, BUFFERED P-GATE SCR DUAL TISP8201M, BUFFERED N-GATE SCR DUAL COMPLEMENTARY BUFFERED-GATE SCRS FOR OVERVOLTAGE PROTECTION MAY 1998 - APRIL 2001 HIGH PERFORMANCE PROTECTION FOR SLICS WITH +VE & -VE BATTERY SUPPLIES ● ● ● D PACKAGE TOP VIEW


    Original     		PDF TISP8200M, TISP8201M, TISP8200M GR-1089-CORE battery charging circuit using scr SCR GATE DRIVER PEB4264 SCR Gate Drive TISP8200M TISP8200MDR TISP8201M TISP8201MDR 8200M

    transistor k44

    Abstract: 79r251
    Text: *R oH S CO M PL IA NT TISP8200M, BUFFERED P-GATE SCR DUAL TISP8201M, BUFFERED N-GATE SCR DUAL COMPLEMENTARY BUFFERED-GATE SCRS FOR DUAL POLARITY SLIC OVERVOLTAGE PROTECTION TISP8200M & TISP8201M High Performance Protection for SLICs with +ve & -ve Battery


    Original     		PDF TISP8200M, TISP8201M, TISP8200M TISP8201M TISP8200M transistor k44 79r251

    transistor k44

    Abstract: Telcordia GR-1089-Core GR-1089-CORE 4A12P-1AH-12R5 TIP45 TISP8210MDR-S K44 TRANSISTOR MARKING
    Text: *R oH S CO M PL IA NT TISP8210MD BUFFERED P-GATE SCR DUAL TISP8211MD BUFFERED N-GATE SCR DUAL COMPLEMENTARY BUFFERED-GATE SCRS FOR DUAL POLARITY SLIC OVERVOLTAGE PROTECTION TISP821xMD Overvoltage Protectors High Performance Protection for SLICs with +ve & -ve


    Original     		PDF TISP8210MD TISP8211MD TISP821xMD TSP0610 transistor k44 Telcordia GR-1089-Core GR-1089-CORE 4A12P-1AH-12R5 TIP45 TISP8210MDR-S K44 TRANSISTOR MARKING

    SCR 2000

    Abstract: SCR TRANSISTOR
    Text: TISP8200M, BUFFERED P-GATE SCR DUAL TISP8201M, BUFFERED N-GATE SCR DUAL COMPLEMENTARY BUFFERED-GATE SCRS FOR OVERVOLTAGE PROTECTION Copyright 2000, Power Innovations Limited, UK MAY 1998 - OCTOBER 2000 HIGH PERFORMANCE PROTECTION FOR SLICS WITH +VE & -VE BATTERY SUPPLIES


    Original     		PDF TISP8200M, TISP8201M, TISP8200M 10/1000rmed, SCR 2000 SCR TRANSISTOR

    TISP8200M

    Abstract: TISP8200MDR-S TISP8201M TISP8201MDR-S GR-1089-CORE PEB4264
    Text: *R oH S CO M PL IA NT TISP8200M, BUFFERED P-GATE SCR DUAL TISP8201M, BUFFERED N-GATE SCR DUAL COMPLEMENTARY BUFFERED-GATE SCRS FOR DUAL POLARITY SLIC OVERVOLTAGE PROTECTION TISP8200M & TISP8201M High Performance Protection for SLICs with +ve & -ve Battery


    Original     		PDF TISP8200M, TISP8201M, TISP8200M TISP8201M TISP8200M NoSP8200M TISP8200MDR-S TISP8201M TISP8201MDR-S GR-1089-CORE PEB4264

    transistor array K1 marking

    Abstract: bourns capacitor network transistor k44
    Text: *R oH S CO M PL IA NT TISP8200HDM BUFFERED P-GATE SCR DUAL TISP8201HDM BUFFERED N-GATE SCR DUAL COMPLEMENTARY BUFFERED-GATE SCRS FOR DUAL POLARITY SLIC OVERVOLTAGE PROTECTION TISP820xHDM Overvoltage Protectors High Performance Protection for SLICs with +ve & -ve


    Original     		PDF TISP8200HDM TISP8201HDM TISP820xHDM GR-1089-CORE IP51-781-5700 TSP0620 transistor array K1 marking bourns capacitor network transistor k44

    SCR GATE DRIVER

    Abstract: SCR Gate Drive SCR gate drive circuit PEB4264 SCR TRANSISTOR SCR FAST SWITCHING GR-1089-CORE TISP8200M TISP8200MDR TISP8201M
    Text: TISP8200M, BUFFERED P-GATE SCR DUAL TISP8201M, BUFFERED N-GATE SCR DUAL COMPLEMENTARY BUFFERED-GATE SCRS FOR OVERVOLTAGE PROTECTION Copyright 2001, Power Innovations Limited, UK MAY 1998 - APRIL 2001 HIGH PERFORMANCE PROTECTION FOR SLICS WITH +VE & -VE BATTERY SUPPLIES


    Original     		PDF TISP8200M, TISP8201M, TISP8200M SCR GATE DRIVER SCR Gate Drive SCR gate drive circuit PEB4264 SCR TRANSISTOR SCR FAST SWITCHING GR-1089-CORE TISP8200M TISP8200MDR TISP8201M

    transistor k44

    Abstract: k44 transistor GR-1089-CORE K44 TRANSISTOR MARKING aag2 Telcordia GR-1089-Core 4A12P-1AH-12R5 TISP8210MDR-S sp82 DSA00273171
    Text: *R oH S CO M PL IA NT TISP8210MD BUFFERED P-GATE SCR DUAL TISP8211MD BUFFERED N-GATE SCR DUAL COMPLEMENTARY BUFFERED-GATE SCRS FOR DUAL POLARITY SLIC OVERVOLTAGE PROTECTION TISP821xMD Overvoltage Protectors High Performance Protection for SLICs with +ve & -ve


    Original     		PDF TISP8210MD TISP8211MD TISP821xMD TSP0610 transistor k44 k44 transistor GR-1089-CORE K44 TRANSISTOR MARKING aag2 Telcordia GR-1089-Core 4A12P-1AH-12R5 TISP8210MDR-S sp82 DSA00273171

    transistor k44

    Abstract: No abstract text available
    Text: *R oH S CO M PL IA NT TISP8200HDM BUFFERED P-GATE SCR DUAL TISP8201HDM BUFFERED N-GATE SCR DUAL COMPLEMENTARY BUFFERED-GATE SCRS FOR DUAL POLARITY SLIC OVERVOLTAGE PROTECTION TISP820xHDM Overvoltage Protectors High Performance Protection for SLICs with +ve & -ve


    Original     		PDF TISP8200HDM TISP8201HDM TISP820xHDM GR-1089-CORE TSP0620 transistor k44

    ic mm74hc

    Abstract: triggering scr with microprocessor cmos scr AN-339 national MM74HC SCR TRIGGER PULSE circuit AN-339 CD4000 MM74C 74HC
    Text: Fairchild Semiconductor Application Note 339 November 1987 INTRODUCTION SCR latch-up is a parasitic phenomena that has existed in circuits fabricated using bulk silicon CMOS technologies. The latch-up mechanism, once triggered, turns on a parasitic SCR internal to CMOS circuits which essentially shorts VCC


    Original     		PDF MM54HC/MM74HC ic mm74hc triggering scr with microprocessor cmos scr AN-339 national MM74HC SCR TRIGGER PULSE circuit AN-339 CD4000 MM74C 74HC

    scr 357

    Abstract: cmos inverter
    Text: Latch-up Protection CMOS inverter, as well as the bipolar components to the parasitic SCR structure. In steady-state conditions, the SCR structure remains off. Destruction results when stray current injects into the base of either Q1 or Q2 see Figure 1 . The current is amplified with regenerative


    Original     		PDF

    scr inverter schematic circuit

    Abstract: SCHEMATIC POWER SUPPLY WITH scr SCR WITH I-V CHARACTERISTICS trace inverter schematic scr inverter SCR TRIGGER circuit
    Text: Latch-up Protection CMOS inverter, as well as the bipolar components to the parasitic SCR structure. In steady-state conditions, the SCR structure remains off. Destruction results when stray current injects into the base of either Q1 or Q2 see Figure 1 . The current is amplified with regenerative


    Original     		PDF

    triggering scr with microprocessor

    Abstract: cmos function generator using cd4049 ic mm74hc national semiconductor CD4000 scr Power Supply Schematic Diagram MM74HC cmos scr CD4049 Application AN-339 national AN-339
    Text: INTRODUCTION SCR latch-up is a parasitic phenomena that has existed in circuits fabricated using bulk silicon CMOS technologies The latch-up mechanism once triggered turns on a parasitic SCR internal to CMOS circuits which essentially shorts VCC to ground This generally destroys the CMOS IC or at


    Original     		PDF MM54HC MM74HC triggering scr with microprocessor cmos function generator using cd4049 ic mm74hc national semiconductor CD4000 scr Power Supply Schematic Diagram cmos scr CD4049 Application AN-339 national AN-339

    4N40

    Abstract: MR5060 scr bt series 200 A 4N39 IEC204A VDE0113 VDE0160 VDE0832 VDE0833 scr optoisolator
    Text: MOTOROLA SEM ICONDUCTOR TECHNICAL DATA 4N39 4N40 6-Pin D IP O p to iso la to rs SCR Output These devices consist o f a gallium -arsenide infrared em itting diode optically coupled to a photo sensitive silicon controlled rectifier SCR . They are designed fo r applications


    OCR Scan     		PDF E54915 IEC380/VDE0806, IEC435/VDE0805, IEC65VDE0860, c0nr6urat10n 30A-02 4N40 MR5060 scr bt series 200 A 4N39 IEC204A VDE0113 VDE0160 VDE0832 VDE0833 scr optoisolator