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    ROHM Semiconductor SCTMU001FC

    Trans MOSFET N-CH 400V 20A 3-Pin TO-220AB Tube (Alt: SCTMU001FC)
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    SCTMU001F Datasheets Context Search

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    Untitled

    Abstract: No abstract text available
    Text: SCTMU001F Data Sheet N-channel SiC power MOSFET lOutline VDSS 400V RDS on (Typ.) 120mW ID 20A PD 132W TO220AB (1) (2) (3) lFeatures lInner circuit 1) Low on-resistance (1) Gate (2) Drain (3) Source 2) Fast switching speed 3) Fast reverse recovery 4) Easy to parallel


    Original     		PDF SCTMU001F 120mW O220AB R1102B

    Untitled

    Abstract: No abstract text available
    Text: SCTMU001F Datasheet N-channel SiC power MOSFET Outline VDSS 400V RDS on (Typ.) 120m ID 20A PD 132W TO220AB Features Inner circuit (2) 1) Low on-resistance 2) Fast switching speed 3) Fast reverse recovery *1 (1) Gate (2) Drain (3) Source (1) 4) Easy to parallel


    Original     		PDF SCTMU001F O220AB R1102A

    SCS205KG

    Abstract: SCS220KE2 SCS240KE2 SCS212AJ SCS230KE2 SCS210AJ
    Text: SiC Power Devices vol.3 The Industry's First Mass-Produced "Full SiC" Power Modules ROHM now offers SiC power devices featuring a number of characteristics, including: high breakdown voltage, low power consumption, and high-speed switching operation not provided by conventional silicon devices.


    Original     		PDF 000A-class) 56P6733E 1500SG SCS205KG SCS220KE2 SCS240KE2 SCS212AJ SCS230KE2 SCS210AJ