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    SD 1062 TRANSISTOR Search Results

    SD 1062 TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    SD 1062 TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: ☆GO-Compatible ◆2 ch DC/DC Controller : Step-Down / Inverting ◆Input Voltage Range : 2.0V ~ 10.0V ◆Output Voltage Externally Set-Up ◆Oscillation Frequency : 180kHz (±15%) ◆Maximum Duty Ratio : Step-Down 100% : Inverting 80% (TYP.) ◆PWM, PWM/PFM Switching Control


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    PDF 180kHz MSOP-10, USP-10 XC9505 20mV/div 10mA/div 180kHz,

    kbc 1070 nu

    Abstract: toshiba c850 JRC 386 amp LYNXEM4 D5024 hosiden DC motor 12V DFWP0125WA R5C475 Matsua inverter MID manual B9017
    Text: ORDER NO. CPD0102001C0 Notebook Computer CF-28 This is the Service Manual for the following areas. M .for U.S.A. and Canada E .for U.K. G .for Germany F .for France S .for Sweden When this product is repaired, the Access Key is necessary to release security of electrical and mechanical.


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    PDF CPD0102001C0 CF-28 CF-28 kbc 1070 nu toshiba c850 JRC 386 amp LYNXEM4 D5024 hosiden DC motor 12V DFWP0125WA R5C475 Matsua inverter MID manual B9017

    1047 jrc

    Abstract: COM16 PQFP100 ST6280B ST6280-EMU2 ST62E80B ST62T80B CQFP-100
    Text: ST62T80B/E80B 8-BIT OTP/EPROM MCU WITH LCD DRIVER, EEPROM AND A/D CONVERTER • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ 3.0 to 6.0V Supply Operating Range 8 MHz Maximum Clock Frequency -40 to +85°C Operating Temperature Range


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    PDF ST62T80B/E80B 1047 jrc COM16 PQFP100 ST6280B ST6280-EMU2 ST62E80B ST62T80B CQFP-100

    MC68030

    Abstract: MCM6287-25 MCM6287-35 M68000 MC68000 MC68008 MC68010 MC68020 MC68851 MC68030FE20
    Text: SECTION 8 EXCEPTION PROCESSING Exception processing is defined as the activities performed by the processor in preparing to execute a handler routine for any condition that causes an exception. In particular, exception processing does not include execution of the handler routine itself. An introduction to


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    PDF MC68030 32-Bit Index-15 Index-16 MCM6287-25 MCM6287-35 M68000 MC68000 MC68008 MC68010 MC68020 MC68851 MC68030FE20

    mc68030

    Abstract: MC68030 users manual mc68851 MCM6287-25 MCM6287-35 DN-12 MCM6287 M68000 MC68000 MC68008
    Text: Freescale Semiconductor, Inc. Freescale Semiconductor, Inc. SECTION 8 EXCEPTION PROCESSING Exception processing is defined as the activities performed by the processor in preparing to execute a handler routine for any condition that causes an exception. In particular, exception


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    PDF MC68030 32-Bit Index-15 Index-16 MC68030 users manual mc68851 MCM6287-25 MCM6287-35 DN-12 MCM6287 M68000 MC68000 MC68008

    2n6080

    Abstract: SD 1062 transistor 2N3924 sd 3632
    Text: ^ 7 SGS-THOMSON TELECOM AND DATA COMMUNICATIONS GiflO Ml(LgmM § RF & MICROWAVE TRANSISTORS TO 39 .380 4L STUD 130 . 230 MHz Type P/N SD SD SD SD SD .380 NARROW 4L STUD TO 60 Config. SD 1012 SD 1014-2 SD 1229-7 SD 1229-8 SD 1018 SD 1021 SD 1022 VCC (V


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    PDF XO-72 O-117SL O-117SL 2N6080 T0-60 SD 1062 transistor 2N3924 sd 3632

    BFR38

    Abstract: BFR99 2N6080 2N956 BFX89 BSX33 9552N TO-117SL XO-72 pnp 2222a
    Text: ^ 7 SGS-THOMSON TELECOM AND DATA COMMUNICATIONS G iflO M l(L g m M § RF & MICROWAVE TRANSISTORS TO 39 .380 4L STUD 130 . 230 MHz Type P/N SD SD SD SD SD .380 NARROW 4L STUD TO 60 Config. SD 1012 SD 1014-2 SD 1229-7 SD 1229-8 SD 1018 SD 1021 SD 1022


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    PDF XO-72 O-117SL O-117SL 2N6080 BSX33 2N956 BFR38 BFR99 BFX89 9552N TO-117SL pnp 2222a

    6lfl

    Abstract: sd 1144 2N6080 7-02N sd1410 2N5643
    Text: ^ 7 SGS-THOMSON TELECOM AND DATA COMMUNICATIONS GiflO Ml(LgmM § RF & MICROWAVE TRANSISTORS TO 39 .380 4L STUD 130 . 230 MHz Type P/N SD SD SD SD SD .380 NARROW 4L STUD TO 60 Config. SD 1012 SD 1014-2 SD 1229-7 SD 1229-8 SD 1018 SD 1021 SD 1022 VCC (V


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    PDF XO-72 O-117SL O-117SL 2N6080 6lfl sd 1144 7-02N sd1410 2N5643

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS BUZ 356 SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated Type BUZ 356 Vbs 800 V h ^DS on Package Ordering Code 5.3 A 2w TO-218AA C67078-S3108-A2 Maximum Ratings Parameter Symbol Continuous drain current Values Unit


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    PDF O-218AA C67078-S3108-A2 flB35bG5 O-218

    transistor 356 j

    Abstract: transistor 356 b
    Text: SIEMENS BUZ 356 SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated Type BUZ 356 Vbs 800 V h 5.3 A ^DSion Package Ordering Code 2H TO-218 AA C67078-S3108-A2 Maximum Ratings Parameter Symbol Continuous drain current Values b 5.3


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    PDF O-218 C67078-S3108-A2 O-218AA transistor 356 j transistor 356 b

    siemens 230 98 O

    Abstract: siemens 230 siemens EC 230 98 siemens 230 98 a1105 T-39-13
    Text: 47E D 053SbOS 0051755 7 B I S I E G SBEMENS SIEMENS AKTIENGE SE LLS CH AF 7 ^ 3 9 - 0 BUZ 230 SIPMOS Power MOS Transistor Vos /„ •O S o n = 1000 V = 5.5 A = 2.0 fi • N channel • FREDFET • Enhancement mode • Package: TO-204AA (TO -3)1) Type


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    PDF E35b05 O-204AA C67078-A1105-A2 T-39-13 siujq740 Q0217bl SIL00742 siemens 230 98 O siemens 230 siemens EC 230 98 siemens 230 98 a1105 T-39-13

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS SIPMOS Power MOS Transistor VDS l0 ^ D S o n BUZ 230 = 1000 V = 5.5 A = 2.0 Q • N channel • FREDFET • Enhancem ent mode • Package: T O -204A A (T O -3 )1) Type Ordering code BUZ 230 C 6 7 0 7 8 -A 1 105-A2 Maximum Ratings Parameter Symbol


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    PDF -204A 105-A2

    SD 1062 transistor

    Abstract: TRANSISTOR b100 D 1062 transistor
    Text: Philips Semiconductors Product specification TrenchMOS transistor Standard level FET GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic envelope suitable for surface mounting. Using ’trench’ technology


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    PDF BUK7840-55 OT223 OT223. SD 1062 transistor TRANSISTOR b100 D 1062 transistor

    C4023

    Abstract: STP40N05 STP40N05FI GC286
    Text: 7 cî2cî237 0 0 m 34bT T B 1? • S G T H SGS-THOMSON STP40N05 STP40N05FI üO T@ KS N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE STP40N05 STP40N05FI ■ . ■ ■ . ■ ■ . V dss R öS on Id 50 V 50 V < 0.035 Q < 0.035 Q 40 A 23 A TYPICAL RDS(on) = 0.03 i l


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    PDF 004b4b STP40N05 STP40N05FI STP40N05 STP40N05FI D04Li47S STP40N05/FI C4023 GC286

    FRM6756D

    Abstract: FRM6756H FRM6756M FRM6756R 1E1A
    Text: Radiation-Hardened MOSFETs FRM6756M, FRM6756D FRM6756R, FRM6756H File Number 2173 Radiation-Hardened N-Channel Power MOSFETs Radiation-Hardened to: 1 Megarad Si 2 x 1012 Neutrons 14 A, 100 V rDs(on) = 0.18 f i N-CHANNEL ENHANCEMENT MODE Features: • Linear transfer characteristics


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    PDF FRM6756M, FRM6756D FRM6756R, FRM6756H FRM67S6M FRMS756R FRM67S6H 1000K FRM6756H FRM6756M FRM6756R 1E1A

    transistor kt 326

    Abstract: transistor KT 3107 Belcanto ST 3010 transistor BU 5027 J 5027-R atakassette SANYO CTP 4360 transistor kt 925 Transstereo 2401.00 transistor KT 816
    Text: SERVICE-MITTEILUNGEN V E B IN D U S T R IE V E R T R IE B R U N D F U N K U N O F E R N S E H E N ir .f -t j | R A P io -teievlslon JUNI/JULI 1960 6/7 SKITB 1-8 Mitteilung aus dem VEB Fernsehgerätewerke Staßfurt Informationen für den Fernsehgeräteservice


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    3n187

    Abstract: TA7669 3n187 MOSFET 3n187 RCA RCA-3N187 K 3264 fet transistor ltn6 3n17 ERIE CAPACITORS ceramic tubular rca 3n187
    Text: G E SOLID S T A T E D l D E |3a?SD Ö l 0024013 G E S O L I D STATE 01E 2 4 0 1 3 D T L 'Z ? \-~? C T Small-Signal L _ 5 L L ± ^ _ 3875081 3N187 Silicon Dual In s u la te d -G a te F ie ld -E ffe c t T ran sistor


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    PDF 3N187 RCA-3N187* 92CS-I4707R2 3n187 TA7669 3n187 MOSFET 3n187 RCA RCA-3N187 K 3264 fet transistor ltn6 3n17 ERIE CAPACITORS ceramic tubular rca 3n187

    ksd 302 250v, 10a

    Abstract: irf 5630 transistor 2SB 367 IRF 3055 AC153Y transistor ESM 2878 TIP 43c transistor 2sk116 bf199 bd643
    Text: 5 transistor 1 A-Z datenlexikon data dictionary lexique de donnees enciclopedia dati lexicon de datos vergleichstabelle comparison table table d'equivalence tabella comparativa tabla comparativa ISBN 3-927486-00-0 Dieses Buch ist hinterlegt und urheberrechllich geschutzt. Alle


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    PDF CB-F36c 2SD1642 2SD2182, 2SC4489, -08S- ksd 302 250v, 10a irf 5630 transistor 2SB 367 IRF 3055 AC153Y transistor ESM 2878 TIP 43c transistor 2sk116 bf199 bd643

    1N6227

    Abstract: silec GG 84 1n623 2G300 chn 543 IC HXJ 2038 1N52398 IN5240 1n48 zener diode
    Text: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY


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    PDF

    IC HXJ 2038

    Abstract: 1N52398 DB5T tfk 102 cny 70 hxj 2038 rca 40361 transistor rca 40362 TFK 680 CNY 70 Diode Equivalent 1N34A 2n5952 equivalent
    Text: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY


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    LG color tv Circuit Diagram schematics

    Abstract: free transistor equivalent book 2sc NPN TRANSISTORS LIST ACCORDING TO CURRENT, VOLTAG RCA SK CROSS-REFERENCE KIA 4318 transistor cs 9012 Til 322A sx3704 diode d.a.t.a. book 1N1007
    Text: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY


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    PDF 3186J LG color tv Circuit Diagram schematics free transistor equivalent book 2sc NPN TRANSISTORS LIST ACCORDING TO CURRENT, VOLTAG RCA SK CROSS-REFERENCE KIA 4318 transistor cs 9012 Til 322A sx3704 diode d.a.t.a. book 1N1007

    2SB415

    Abstract: 2SB 710 2sc1061 2sd524 2sb504 HD68P01 2sb507 2sa762 2sc827 2SC1362
    Text: V W Ki * 91 ^ # b h 7 >->" X ? i, t ^ X M X V M W X M £ (E I A J i: 2 S W Z x R m z t i S , x t iz J :'), ? 4000H£< * ^ t i X t 4 ', ^ i t . : w ° n l l ±, Z iih J M I1 L -C A J t t , g 4 - ? 4 M # c o ( , c o T ' & , I W H H c o f ^ 6 i> w 1, ^ & >) b ') £ i ~


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    PDF 4000HÂ 2SB415 2SB 710 2sc1061 2sd524 2sb504 HD68P01 2sb507 2sa762 2sc827 2SC1362

    RCA SK CROSS-REFERENCE

    Abstract: CD4003 2N2505 TF408 1N4465 250PA120 2N3017 pt 3570 trw rf pa189 Semicon volume 1
    Text: 1969 o < 00 x ic e uo <r\ *—4 rO O CM u J 'r < o o o CO r aJ. rfrr.~> y -< z X— < P“ -J Sem iconductor Annual At .0008" Dia. . . . there is no second source phire orifice insert. Tempress also created and supplied the tungsten carbide ultrasonic bonding tool and pioneered


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    MSC1002

    Abstract: AVIA c cube IC CD 4440 amplifier circuit diagram
    Text: TABLE OF CONTENTS INTRODUCTION ALPHANUMERICAL INDEX Page 4 7 PRODUCTS GUIDE 11 -SYM BO LS -SELECTION GUIDE -C R O S S REFERENCE 13 14 37 DATASHEETS 45 INTRODUCTION SGS-THOMSON MICROELECTRONICS, RF PRODUCTS GROUP RF & MICROWAVE COMPONENTS DATABOOK, 2nd Edition


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    PDF 28Vdc MSC1002 AVIA c cube IC CD 4440 amplifier circuit diagram