Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    SDF034 Search Results

    SDF034 Datasheets (7)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    SDF034 Solitron Devices VDS (V) = 60, Id Continuous Tc=25C (A) = 30, Idm Pulsed (A) = 120, RDS (On) (Ohms)... Scan PDF
    SDF034JAAD Solitron Devices N-CHANNEL ENHANCEMENT MOS FET Scan PDF
    SDF034JAAS Solitron Devices N-CHANNEL ENHANCEMENT MOS FET Scan PDF
    SDF034JAAU Solitron Devices N-CHANNEL ENHANCEMENT MOS FET Scan PDF
    SDF034JABD Solitron Devices N-CHANNEL ENHANCEMENT MOS FET Scan PDF
    SDF034JABS Solitron Devices N-CHANNEL ENHANCEMENT MOS FET Scan PDF
    SDF034JABU Solitron Devices N-CHANNEL ENHANCEMENT MOS FET Scan PDF

    SDF034 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: SDF034JABVGD1N Transistors N-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)60 V(BR)GSS (V)20 I(D) Max. (A)30 I(DM) Max. (A) Pulsed I(D) @Temp (øC) IDM Max (@25øC Amb)120 @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)75 Minimum Operating Temp (øC)-55


    Original     		PDF SDF034JABVGD1N

    Untitled

    Abstract: No abstract text available
    Text: SDF034JAAVGD1N Transistors N-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)60 V(BR)GSS (V)20 I(D) Max. (A)30 I(DM) Max. (A) Pulsed I(D) @Temp (øC) IDM Max (@25øC Amb)120 @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)75 Minimum Operating Temp (øC)-55


    Original     		PDF SDF034JAAVGD1N

    SDF034

    Abstract: No abstract text available
    Text: Æ litron 330! E L E C T R O N I C S WAY, TEL: 407 848-4311 PRODUCT DEVICES,INC. W E S T P A L M BEACH, F L O R I D A 3 3 4 0 7 FA X: (407) 8 6 3 - 5 9 4 6 N -C H A N N E L ENHANCEM ENT MOS F E T ABSOLUTE MAXIMUM RATINGS PARAMETER Total 60V, SYMBOL D r a i n - s o u r c e Vo I t .(1)


    OCR Scan     		PDF SDF034 SDF034 MIL-S-19500 fl3bfib02

    Untitled

    Abstract: No abstract text available
    Text: Æ iltron PRODUCT DEVICES.INC. 3301 ELECTRONICS WAY, WEST PALM BEACH, FLORIDA 33407 TEL: 407 848-4311 FAX: (407) 863-5946 N-CHANNEL ENHANCEMENT MÜS FET ABSOLUTE MAXIMUM RATINGS PARAMETER 60V, SYMBOL Drain-source Volt.(l) Drain-Gate Voltage ( R g s = 1•O M n ) (1)


    OCR Scan     		PDF SDF034 SDF034

    SDF034

    Abstract: No abstract text available
    Text: Æ u t r o n , , „ p ir o q u o t â t a lq o N-CHANNEL ENHANCEMENT MOS FET 60V, ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL Drain-source Vo 11 . 1 VDSS Dra in-Gate Vo 1tage VDGR (Rgs = 1.OMn) (1) Gate-Source Voltage VGS Con t inuous Drain Current Continuous


    OCR Scan     		PDF SDF034 SDF034 MIL-S-19500 300nS,