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    SDF10N60 Search Results

    SDF10N60 Datasheets (7)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    SDF10N60 Solitron Devices VDS (V) =, Id Continuous Tc=25C (A) = 10, Idm Pulsed (A) = 40, RDS (On) (Ohms) = 0... Scan PDF
    SDF10N60JAAD Solitron Devices N-CHANNEL ENHANCEMENT MOS FET Scan PDF
    SDF10N60JAAS Solitron Devices N-CHANNEL ENHANCEMENT MOS FET Scan PDF
    SDF10N60JAAU Solitron Devices N-CHANNEL ENHANCEMENT MOS FET Scan PDF
    SDF10N60JABD Solitron Devices N-CHANNEL ENHANCEMENT MOS FET Scan PDF
    SDF10N60JABS Solitron Devices N-CHANNEL ENHANCEMENT MOS FET Scan PDF
    SDF10N60JABU Solitron Devices N-CHANNEL ENHANCEMENT MOS FET Scan PDF

    SDF10N60 Datasheets Context Search

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    F10N60

    Abstract: No abstract text available
    Text: SDP/F10N60 Green Product S a mHop Microelectronics C orp. Preliminary 600V N-Channel Planar MOSFET FEATURES PRODUCT SUMMARY V DSS ID Fast Switching. R DS ON (m Ω) Max 100% Avalanche Rated. 600V 10A G D S 0.75 @ VGS=10V,ID=5A TO-220 TO-220F G D S ABSOLUTE MAXIMUM RATINGS ( T A=25 °C unless otherwise noted )


    Original     		PDF SDP/F10N60 O-220 O-220F SDP10N60 SDF10N60 O-220/220F F10N60

    Untitled

    Abstract: No abstract text available
    Text: =ÆntrOn n rv i FS m e _ P R O D U C T C À T Â L Q Q n - c h a n n e l enhancem ent mos f e t 600V, A B S O L U T E MAXIMUM R A T IN G S PARAMETER UNITS SYMBOL D r a i n - s o u r c e Vo 1 t . 1 D r a i n - Ga t e Vo 1t age ( R gs = 1•OMn) ( 1 )


    OCR Scan     		PDF SDF10N60 SDF10N60 IF-10

    SDF10N60

    Abstract: No abstract text available
    Text: Æ lltro n PRODUCT DEVICES.INC. N-CHANNEL ENHANCEMENT MOS FET ABSOLUTE MAXIMUM RATINGS PARAMETER 600V, UNITS SYMBOL Drain-source Volt. l Drain-Gate Vo 1tage (Rg s =1.0M o ) (1) Gate-Source Voltage Con t inuous Drain Current Continuous (Tc = 25*C) Drain Current Pulsed(3)


    OCR Scan     		PDF SDF10N60 MIL-S-19500 300nS.