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    SDF26N50 Search Results

    SDF26N50 Datasheets (4)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    SDF26N50 Solitron Devices VDS (V) =, Id Continuous Tc=25C (A) = 26, Idm Pulsed (A) = 104, RDS (On) (Ohms) =... Scan PDF
    SDF26N50GAFD Solitron Devices N-CHANNEL ENHANCEMENT MOS FET Scan PDF
    SDF26N50GAFS Solitron Devices N-CHANNEL ENHANCEMENT MOS FET Scan PDF
    SDF26N50GAFU Solitron Devices N-CHANNEL ENHANCEMENT MOS FET Scan PDF

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    Untitled

    Abstract: No abstract text available
    Text: Æutron PRODUCT DEVICES,INC. ¡177 B L U E H E R O N BLVD. • R I VIERA BEACH, FLORIDA 33404 TEL: 407 848-4311 • TLX: S I - 3 4 3 5 « FAX: (407) 863-5946 N-CHANNEL ENHANCEMENT MOS FET 500V, 2 6 A , 0.22 Q ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL UNITS


    OCR Scan     		PDF 300nS, 03bflfc SDF26N50 i/dt-100A/

    1D13A

    Abstract: SDF26N50
    Text: Æwtxan PRODUCT DEVICES.INC. N-CHANNEL ENHANCEMENT MOS FET 500V, 2 6 A , 0.22Q ABSOLUTE MAXIMUM RATINGS SYMBOL PARAMETER UNITS Drain-source Volt. l Drain-Gate Voltage ( R o s M . O M n ) (1) Gate-Source Voltage Cont inuous Drain Current Continuous (Tc = 25-C)


    OCR Scan     		PDF 00A/J1S SDF26N50 MIL-S-19500 300nS, 1D13A