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    SDF420 Price and Stock

    TURCK Inc GSDF 42-0.5M/14.5/NPT

    Rdp |Turck GSDF 42-0.5M/14.5/NPT
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    Newark GSDF 42-0.5M/14.5/NPT Bulk 1
    • 1 $58.14
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    TURCK Inc GSDF 42-0.2M/14.5/NPT

    Rdp |Turck GSDF 42-0.2M/14.5/NPT
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    Newark GSDF 42-0.2M/14.5/NPT Bulk 1
    • 1 $55.9
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    TURCK Inc GSDF 42-0.3M/14.5/NPT

    Rdp |Turck GSDF 42-0.3M/14.5/NPT
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    Newark GSDF 42-0.3M/14.5/NPT Bulk 1
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    TURCK Inc GSDF 42-0.5M/14.75/NPT

    Rdp |Turck GSDF 42-0.5M/14.75/NPT
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    Newark GSDF 42-0.5M/14.75/NPT Bulk 1
    • 1 $64.3
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    • 100 $64.3
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    TURCK Inc GSDF 42-0.3M/14.75/NPT

    Rdp |Turck GSDF 42-0.3M/14.75/NPT
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Newark GSDF 42-0.3M/14.75/NPT Bulk 1
    • 1 $64.3
    • 10 $64.3
    • 100 $64.3
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    SDF420 Datasheets (6)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    SDF420 Solitron Devices VDS (V) = 500, Id Continuous Tc=25C (A) = 2.5, Idm Pulsed (A) = 8, RDS (On) (Ohms)... Scan PDF
    SDF420JAAD Solitron Devices N-CHANNEL ENHANCEMENT MOS FET Scan PDF
    SDF420JABS Solitron Devices N-CHANNEL ENHANCEMENT MOS FET Scan PDF
    SDF420JABU Solitron Devices N-CHANNEL ENHANCEMENT MOS FET Scan PDF
    SDF420JDAD Solitron Devices N-CHANNEL ENHANCEMENT MOS FET Scan PDF
    SDF420JDAS Solitron Devices N-CHANNEL ENHANCEMENT MOS FET Scan PDF

    SDF420 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: SDF420EHX Transistors N-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)500 V(BR)GSS (V) I(D) Max. (A)2.5 I(DM) Max. (A) Pulsed I(D) @Temp (øC) IDM Max (@25øC Amb) @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)50 Minimum Operating Temp (øC)


    Original     		PDF SDF420EHX

    SDF420

    Abstract: D25A
    Text: Æ ntron PRODUCT DEVICES,INC. CÂTÂLO' N -CHANNEL ENHANCEMENT MOS FET ABSOLUTE MAXIMUM RATINGS PARAMETER 500V, SYMBOL UNITS Drain-source Volt. l Dra in-Gate Vo 1tage (R gs = 1•O M n ) (1) G a te-Souree Vo 1tage Cont inuous Drain Current Continuous (Tc = 25°C)


    OCR Scan     		PDF 300nS, SDF420 SDF420 MIL-S-19500 D25A

    Untitled

    Abstract: No abstract text available
    Text: Æ litro n PRODUCT DEVICES.INC. 330] ELECTRONICS WAY. WEST PALM BEACH. FLORIDA 33-107 TEL: 407 848-4311 FAX: (407) 863-5946 N-CHANNEL ENHANCEMENT MOS FET 500V, 2.5A, 3. On ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL UNITS Drain-source Vo 1t .(1) Dra in-Ga te Vo 1tage


    OCR Scan     		PDF 5DF420 SDF420 SDF420

    Untitled

    Abstract: No abstract text available
    Text: ^ l i t r o n PRODUCT DEVICES.INC. 3301 ELECTRONICS WAY. WEST PALM BEACH, FLORIDA 33407 t e l. 407 848-43H fa x . (407) 863-5946 ki _ p r j A M M C I (Rg s M . O M o ) (1) Gate-Source Voltage Con t inuous Drain Current Continuous (Tc = 25* C) Drain Current Pulsed(3)


    OCR Scan     		PDF 848-43H 03bflbOS