SDQ2 Search Results

Contextual Info: SMJ44C250 262 144 BY 4-BIT MULTIPORT VIDEO RAM SGMS037 — JANUARY 1991 * Military Operating Temperature Range JD Package* Top View . . , - 5 5 ° C t o 125°C DRAM: 262 144 Words SAM: 512 Words * * * x x 4 Bits 4 Bits 28 : 27 : 3 26 : SDQ2 TRG c 4 25 :

Contextual Info: MSM54V16283-60GS-KR1 IL08 4 MB 262,144 x 16 -BIT MULTI-PORT DRAM —TOP VIEW— VCC 1 TRG IN 2 GND 3 SDQ0 I/O 4 DQ0 I/O 5 SDQ1 I/O 6 DQ1 I/O 7 VCC 8 SDQ2 I/O 9 DQ2 I/O 10 SDQ3 I/O 11 DQ3 I/O 12 GND 13 SDQ4 I/O 14 DQ4 I/O 15 SDQ5 I/O 16 DQ5 I/O 17 VCC 18 SDQ6 I/O 19

MT43C8129

Abstract: MT43C MT43C8128
Contextual Info: M ICRO N 128K TRIPLE PORT DRAM M T43C8128/9 X 8 TP D R A M 128K x 8 DRAM WITH DUAL 256 x 8 SAMS FEATURES • • PIN ASSIGNMENT Top View 52-PIN PLCC (P-1) iess Q f f o S S S o S a S a 2iiS n n n n n n n n n n n n r " ) S D Q ia SDQ2a SDQ3a SD04a TR/OE DQ1

5962-8949704MXA

Abstract: SMJ44C251B-10SVM VRAM MT42C4256C-10 MT42C4256 vram dual port SMJ44C251B 5962-8949704 asi SMJ44C251B 5962-8949704MZA
Contextual Info: VRAM SMJ44C251B MT42C4256 Austin Semiconductor, Inc. 256K X 4 VRAM PIN ASSIGNMENT Top View 256K x 4 DRAM with 512K x 4 SAM 28-Pin DIP (C) (400 MIL) AVAILABLE AS MILITARY SPECIFICATIONS SC SDQ1 SDQ2 TR\/OE\ DQ1 DQ2 ME\/WE\ NC RAS\ A8 A6 A5 A4 Vcc • SMD 5962-89497

SMJ44C25112

Abstract: SMJ44C251-12
Contextual Info: SMJ44C251 262,144 BY 4-BIT MULTIPORT VIDEO RAM FEBRUARY 1990 • DRAM: 262,144 Words x 4 Bits SAM: 512 Words x 4 Bits JD AND HJ PACKAGES1 TOP VIEW 1 ^ 2 8 U VSS 2 27 SDQ3 3 26 "I SDQ2 4 25 U S E 5 24 ] DQ3

Contextual Info: MT42C4256 256K X 4 VRAM |U |C = R O N 256K X 4 DRAM WITH 512x4 SAM VRAM FEATURES • • • • • • • • 28-Pin SOJ Q-4 • • • • • • 1 DQ4 3 SDQ2 C 3 26 ] SDQ3 DQ1 C 5 DQ3 4 SDQ3 5 Vss 7 25 ] SÊ 24 ] DQ4 DQ2 Í 6 23 J DQ3 ME/W E [ 7

BGA441

Contextual Info: 5 4 3 2 1 CPU1 D D 5 SDQ[31:0] SDQ[31:0] U1-1 C 5 SVREF[3:0] 5 SDQS[3:0] 5 SDQM[3:0] SVREF[3:0] SDQS[3:0] 5 SDQS0# 5 SDQS1# 5 SDQS2# 5 SDQS3# SDQM[3:0] 5 5 5 SCK# SCK SCKE0 B 5 SA[14:0] 5 SBA[2:0] SA[14:0] SBA[2:0] 5 5 5 5 SWE SCAS SRAS SCS0 SDQ0 SDQ1 SDQ2

MT42C4064

Abstract: 0041478 mt4067 MT42
Contextual Info: MT42C4064 883C AVAILABLE AS MILITARY SPECIFICATION PIN ASSIGNMENT Top View • SMD 5962-89952, Class M • JAN 5962-89952, Class B • MIL-STD-883, Class B 24L/400 DIP tD- 11 ) sc i 1 * SDQ1 2 SDQ2Í 3 T r /ü ë î 4 DQ1 5 DQ2C ME/WE 7 RAS E8 A6 C9 A5C 10

Contextual Info: PRELIMINARY MICRON MT42C4255 883C AVAILABLE AS MILITARY SPECIFICATIONS PIN ASSIGNMENT Top View • SM D 5962-89497, C lass M • JA N 5962-89497, Class B • M IL-STD -883, Class B 28L/400 CDIP SCI 1 28 1Vss FEATURES SDQ11 2 27 ISDQ4 SDQ2 [ 3 26 ISDQ3 •

VRAM

Abstract: MT42C4256 SMJ44C251B SMJ44C251B-10JDM MT42C4256C-10 SMJ44C251B-10 SMJ44C251B-10SVM
Contextual Info: VRAM SMJ44C251B MT42C4256 Austin Semiconductor, Inc. 256K X 4 VRAM PIN ASSIGNMENT Top View 256K x 4 DRAM with 512K x 4 SAM 28-Pin DIP (C) (400 MIL) AVAILABLE AS MILITARY SPECIFICATIONS SC SDQ1 SDQ2 TR\/OE\ DQ1 DQ2 ME\/WE\ NC RAS\ A8 A6 A5 A4 Vcc • SMD 5962-89497

Contextual Info: AS42C4256 883C 256K X 4 VRAM AUSTIN SEMICONDUCTOR, INC. 256K X 4 DRAM WITH 5 1 2 x 4 SAM VRAM AVAILABLE AS MILITARY SPECIFICATION PIN ASSIGNMENT Top View • MIL-STD-883 • • SC SDQ1 SDQ2 TR\-OE\ DQ1 DQ2 ME\-WE\ NC RAS\ A8 A6 A5 A4 , i [ i i i i i i [

Multiport Video RAM 256k x 16

Abstract: vram dual port SDQ14
Contextual Info: ADVANCE M MT42C256K16A1 2 5 6 K x 16 V R A M IC R O N VRAM 256K x 16 DRAM WITH 512x16 SAM FEATURES • • • • 64-Pin SOP Vcc TR Vss SDQQ DQO SDQ1 DQ1 Vcc SDQ2 002 SOQ3 Vss SOQ4 004 S0Q5 005 Vcc SDQ6 0Q6 SDQ7 007 Vm WEL WEU RAS A8 A7 A6 A5 A4 Voc JEDEC Standard Mandatory Function set plus

0 258 007 033

Abstract: DRQ127 DRQ74 744 231 091
Contextual Info: COILTRONICS SMT Dual-Winding, Shielded Power Inductors Inductance vs Current Rating Reference Table Legend Isat A \ 4.34 DCR (Ohms) 0.003 I SDQ12 SDQ25 DRQ74 DRQ73 'II I DRQ127 DRQ125 12.3x12.3 I . 12.3x12.3 . .- I ll Inductance pH 4.34 3.38 2.34 2.03

Contextual Info: SMJ44C251B 262144 BY 4-BIT MULTIPORT VIDEO RAM SGMS058A- MARCH 1995 - REVISED JUNE 19BS Military Operating Temperature Range -55 °C to 125°C Performance Ranges: AC CESS AC CESS ACCESS ACCESS TIME TIME TIME TIME ROW COLUM N SER IAL SER IAL ADDRESS EN ABLE

MSM5416263

Abstract: 256x16* STATIC RAM weland SM5416
Contextual Info: OKI Semiconductor MSM5416263 262,144-W ord x 1 6 -Bit M ultiport D RA M DESCRIPTION The MSM5416263 is a 4-Mbit CMOS multiport DRAM composed of a 262,144-word by 16-bit dynamic RAM and a 512-word by 16-bit SAM. Its RAM and SAM operate independently and asynchronously.

KM428C257

Abstract: XAL W6 MAS 10 RCD sc 4145 CNR 14 V 471 K CA278 CI008 On Screen Display Samsung
Contextual Info: SA M S U N G E L E C T R O N I C S INC b7E D m 7^4142 001L>bb2 17Û SMGK PRELIMINARY KM428C257 CMOS VIDEO RAM 256K X 8 Bit CMOS Video RAM FEATURES GENERAL DESCRIPTION - Dual port Architecture 2 56 K x 8 bits RAM port 512 x 8 bits SAM port The Sam sung KM 428C 257 is a C M OS 256K x 8 bit Dual

Contextual Info: 168PIN PC100 Registered DIMM 512MB With 32M X 8 CL2 TS64MLR72V8F2 Placement Description The TS64MLR72V8F2 is a 64M bit x 72 Synchronous Dynamic RAM high-density memory registered DIMM module. The TS64MLR72V8F2 consists of 18pcs of CMOS 32Mx8bits Synchronous DRAMs in TSOP-II

Contextual Info: 184Pin DDR400 Registered DIMM 2GB with 128Mx4 CL3 TS256MDR72V4S Description Placement The TS256MDR72V4S is a 256M x 72bits Double Data Rate SDRAM high-density for DDR400. The TS256MDR72V4S consists of 36pcs CMOS 128Mx4 bits Double Data Rate SDRAMs in 60 ball FBGA packages,

MSM5416283-60

Abstract: MSM5416283 SAM256
Contextual Info: O KI Semiconductor MSM5416283 262,144-Word x 16-Bit Multiport DRAM DESCRIPTION The MSM5416283 is a 4-Mbit CMOS multiport DRAM composed of a 262,144-word by 16-bit dynamic RAM, and a 512-word by 16-bit SAM. Its RAM and SAM operate independently and asynchronously.

MSM5416272

Contextual Info: E2L0020-17-Y1 ¡ Semiconductor MSM5416272 ¡ Semiconductor This version: Jan. 1998 MSM5416272 Previous version: Dec. 1996 262,144-Word ¥ 16-Bit Multiport DRAM DESCRIPTION The MSM5416272 is a 4-Mbit CMOS multiport DRAM composed of a 262,144-word by 16-bit

MSM54V16272

Contextual Info: E2L0024-17-Y1 ¡ Semiconductor MSM54V16272 ¡ Semiconductor This version: Jan. 1998 MSM54V16272 Previous version: Dec. 1996 262,144-Word ¥ 16-Bit Multiport DRAM DESCRIPTION The MSM54V16272 is a 4-Mbit CMOS multiport DRAM composed of a 262,144-word by 16-bit

MSM5416263

Abstract: srt 0110
Contextual Info: Dear customers, About the change in the name such as "Oki Electric Industry Co. Ltd." and "OKI" in documents to OKI Semiconductor Co., Ltd. The semiconductor business of Oki Electric Industry Co., Ltd. was succeeded to OKI Semiconductor Co., Ltd. on October 1, 2008.

ns741

Abstract: MSM5416273 l1741
Contextual Info: Dear customers, About the change in the name such as "Oki Electric Industry Co. Ltd." and "OKI" in documents to OKI Semiconductor Co., Ltd. The semiconductor business of Oki Electric Industry Co., Ltd. was succeeded to OKI Semiconductor Co., Ltd. on October 1, 2008.

MSM548263

Abstract: SOJ40 TFSC
Contextual Info: お客様各位 資料中の「沖電気」「ＯＫＩ」等名称の OKI セミコンダクタ株式会社への変更について 2008 年 10 月 1 日を以って沖電気工業株式会社の半導体事業は OKI セミコン ダクタ株式会社に承継されました。 従いまして、本資料中には「沖電気工業株