uPC2581
Abstract: uPC2002 2sd1557 uPA67C uPB582 upc1237 uPC317 2P4M PIN DIAGRAM 2SC4328 uPC157
Text: C&C for Human Potential Microcomputer 1 SEMICONDUCTOR SELECTION GUIDE GUIDE BOOK IC Memory 2 Semi-Custom IC 3 Particular Purpose IC 4 General Purpose Linear IC 5 Transistor / Diode / Thyristor 6 Microwave Device / Consumer Use High Frequency Device 7 Optical Device 8
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PD7500
X10679EJAV0SG00
MF-1134)
1995P
uPC2581
uPC2002
2sd1557
uPA67C
uPB582
upc1237
uPC317
2P4M PIN DIAGRAM
2SC4328
uPC157
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Untitled
Abstract: No abstract text available
Text: NEC LIGHT EM ITTING EifCTROfJ DCVICE DIODE SE302A GaAs INFRARED EM ITTING DIODE INDUSTRIAL USE -N E P O C SERIES - DESCRIPTION The SE302A is a GaAs G allium Arsenide Infrared Lig h t E m ittin g Diode w hich is m ounted on the lead fram e and m olded in
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SE302A
SE302A
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PH101
Abstract: SE302A
Text: N E C 30E D ELECTRONICS INC • L.ME7525 1 ■ LIGHT EMITTING "p " H DIODE SE302A GaAs IN FR A R ED E M IT T E R IN D U S T R IA L U SE D E S C R IP T IO N The S E 3 0 2 A is a G aAs Gallium Arsenide Infrared Light Emitting Oiode which is mounted on the lead frame and molded in
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MS75S5
SE302A
SE302A
940nm.
PH101
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OA9 diode
Abstract: No abstract text available
Text: N E C ELECTRONICS INC 30E D • L.ME75E5 1 ■ LIGHT EM ITTIN G " T^-* fI — I DIODE SE302A GaAs INFRARED EM ITTER IN D U ST R IA L USE D E S C R IP T IO N The S E 3 0 2 A is a GaAs Gallium Arsenide) Infrared Light Emitting Oiode which is mounted on the lead frame and molded in
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ME75E5
SE302A
SE302A
940nm.
OA9 diode
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PS2009B
Abstract: SE303 PS2003
Text: NEC ELECTRONICS IÑC ST inF|fc,4S7525 □□0S4SS 1 INFRARED LED TYPE NO. MATERIAL SE301A GaAs SE302A GaAs SE303 GaAs SE303A GaAs SE304 GaAs x T ' *//'/3 High output High reliability M ini size High output N arrow radiation angle High output W ide radiation angle
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4S7525
SE301A
SE303
SE303A
SE304
SE306
SE308
SE1003
PS2009B
SE303
PS2003
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SE303 IR
Abstract: EE-L109 SE303 SE303A-C EE-L106 122dl TLN101A TLN102 TLN103A TLN104
Text: 226 - % % - it £ fi fr Tu uu /v £ &tj & 9 IX V fjg Ä j * j f . jg fg? Xp e \ I f Pd t y p n m t y p (d e g ) n> t y p (V ) m a x (V ) (m A ) (m W ) CC) 1 .2 1 .5 30 940 ± 50 - — 2 5 —85 L -7 0 E E -L 1 0 9 1 .2 1 .5 30 940 ±20 50 - —2 5 —85
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EE-L106
EE-L109
L-147
TLN101A
TLN102
TLN103A
TLN104
TLN104ILB)
TLN10
L-128
SE303 IR
EE-L109
SE303
SE303A-C
122dl
TLN101A
TLN102
TLN103A
TLN104
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lp30
Abstract: No abstract text available
Text: N E C ELECTRONICS 'INC 30E D NEC bH275S5 DOSSSb? OPTOELECTRONIC DEVICES T Light Emitting Diodes cont. Remote Control Typical Characteristics (Ta - 25°C) CL If typ. (pA) > Vf TYP. (V) (Ip—3 0 mA) 5* Absolute Maximum Ratings (Ta = 2» C) Pd(mW) Ip (mA) Tstg(°C)
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bH275S5
SE301A
SE302A
SE303A-C
SE304
SE306
SE307-C
SE30B
SE310
SE313
lp30
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NDL1102
Abstract: LF50 bh27ss5 SE1003-C SE301A SE302A SE303A-C SE304 SE306 SE307-C
Text: N E C ELECTRONICS INC 30E D bH27SS5 DOSSSb? T NEC OPTOELECTRONIC DEVICES L igh t Em itting D iodes cont. Remoie Control Absolute Maximum Ratings (Ta = 2» C) Ir TYP. (f/A) (V„=3V) -65 to +125 1.2 (lp=50 mA) 0.01 50 -30 to +80 1.2 150 100 1.25 -40 to +100
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bH27SS5
SE301A
SE302A
SE303A-C
SE304
SE306
NDL5500
NDL5500C
NDL5500P
GI-50/125
NDL1102
LF50
SE1003-C
SE307-C
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