wireless triaxial accelerometer sensor
Abstract: freescale Bootloader an2295 RD3162MMA7260Q hc08 can bus bootloader 3 axes accelerometer AN2295 RF MODULE A-434 triaxial accelerometer sensor ALPs modulator MMA7260Q
Text: 434 MHz Wireless Triple Axis Accelerometer Reference Design ESTAR Designer Reference Manual ESTARRM Rev. 0 02/2007 freescale.com 434 MHz Wireless Triple Axis Accelerometer Reference Design Designer Reference Manual by: Petr Gargulák and Pavel Lajšner Freescale Czech Systems Laboratories
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M50734
Abstract: M37420 m37418 mitsubishi machine instruction 740 family BA 4916 sr 4416 M37424 hitachi transistor 9016 M37524 M37408
Text: To all our customers Regarding the change of names mentioned in the document, such as Mitsubishi Electric and Mitsubishi XX, to Renesas Technology Corp. The semiconductor operations of Hitachi and Mitsubishi Electric were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog
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Abstract: No abstract text available
Text: Application Note 1677 Authors: Oscar Mansilla, Richard Hood, Lawrence Pearce, Eric Thomson and Nick Vanvonno Single Event Effects Testing of the ISL70218SRH, Dual 36V Rad Hard Low Power Operation Amplifiers Introduction SEE Test Objective The intense heavy ion environment encountered in space
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ISL70218SRH,
300mV
AN1677
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dr1 433.92
Abstract: 433.92 MHz Edd 44 AEC-Q100-002 LQFP32 MC33696 QFN32 C4138 NX5032GA has polarity dme common base amplifier circuit designing
Text: Freescale Semiconductor Data Sheet MC33696 Rev. 12, 02/2010 MC33696 PLL Tuned UHF Transceiver for Data Transfer Applications Overview The MC33696 is a highly integrated transceiver designed for low-voltage applications. It includes a programmable PLL for multi-channel applications,
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MC33696
MC33696
dr1 433.92
433.92 MHz
Edd 44
AEC-Q100-002
LQFP32
QFN32
C4138
NX5032GA has polarity
dme common base amplifier circuit designing
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dme common base amplifier circuit designing
Abstract: dr1 433.92 Edd 44 LQFP32 MC33696 QFN32 AEC-Q100-002
Text: Freescale Semiconductor Data Sheet MC33696 Rev. 11, 03/2009 MC33696 PLL Tuned UHF Transceiver for Data Transfer Applications Overview The MC33696 is a highly integrated transceiver designed for low-voltage applications. It includes a programmable PLL for multi-channel applications,
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MC33696
MC33696
dme common base amplifier circuit designing
dr1 433.92
Edd 44
LQFP32
QFN32
AEC-Q100-002
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ESD test plan
Abstract: vqe 14e IR 134E 463E-04 VQE 13E WE VQE 23 F 47AG mosfet 9420 vqe 24e WE VQE 11 E
Text: Single Event Effects Test Report R5, 100V, SE, N R5, 130V, SE, N R5, 150V, SE, N R5, 60V, N R5, 30V, N March 2000 - B.N.L. 233 Kansas Street El Segundo CA 90245 Fax-On-Demand 310 252 7100 Website WWW.irf.com International Rectifier Corp. SEE Test Report March 2000 - B.N.L.
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Abstract: No abstract text available
Text: MC33696 Rev. 12, 02/2010 Freescale Semiconductor Data Sheet MC33696 PLL Tuned UHF Transceiver for Data Transfer Applications Overview The MC33696 is a highly integrated transceiver designed for low-voltage applications. It includes a programmable PLL for multi-channel applications,
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MC33696
MC33696
LQFP32
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FTA10
Abstract: dr1 433.92 NX5032GA Edd 44 AEC-Q100-002 LQFP32 MC33596 QFN32 MC33956
Text: Freescale Semiconductor Data Sheet MC33596 Rev. 4, 03/2009 MC33596 PLL Tuned UHF Receiver for Data Transfer Applications Overview The MC33596 is a highly integrated receiver designed for low-voltage applications. It includes a programmable PLL for multi-channel applications,
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MC33596
MC33596
FTA10
dr1 433.92
NX5032GA
Edd 44
AEC-Q100-002
LQFP32
QFN32
MC33956
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Untitled
Abstract: No abstract text available
Text: Application Note 1913 Single Event Effects Testing of the ISL70003SEH, a 3V to 13.2V, 6A Synchronous Buck Regulator Introduction amplifier for the generating the VREF voltage. High integration, best in class radiation performance and a feature filled design
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ISL70003SEH,
ISL70003SEH
AN1913
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Untitled
Abstract: No abstract text available
Text: MC33596 Rev. 5, 02/2010 Freescale Semiconductor Data Sheet MC33596 PLL Tuned UHF Receiver for Data Transfer Applications Overview The MC33596 is a highly integrated receiver designed for low-voltage applications. It includes a programmable PLL for multi-channel applications,
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MC33596
MC33596
LQFP32
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STRH12P10GYG
Abstract: No abstract text available
Text: STRH12P10 Rad-Hard 100 V, 12 A P-channel Power MOSFET Datasheet - production data Features VDSS ID RDS on Qg 100V 12 A 265 mΩ 40 nC • Fast switching • 100% avalanche tested • Hermetic package • 100 krad TID • SEE radiation hardened TO-257AA Applications
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STRH12P10
O-257AA
DocID022337
STRH12P10GYG
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Untitled
Abstract: No abstract text available
Text: STRH8N10 Rad-Hard 100 V, 6 A N-channel Power MOSFET Datasheet - preliminary data Features VDSS ID RDS on Qg 100 V 6A 0.30 Ω 22 nC • Fast switching • 100% avalanche tested • Hermetic package • 70 krad TID SMD0.5 • SEE radiation hardened Applications
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STRH8N10
STRH8N10S1
STRH8N10SG
DocID018504
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Untitled
Abstract: No abstract text available
Text: STRH12P10 Rad-Hard 100 V, 12 A P-channel Power MOSFET Datasheet - production data Features VDSS ID RDS on Qg 100V 12 A 265 mΩ 40 nC • Fast switching • 100% avalanche tested 1 2 • Hermetic package 3 • 100 krad TID • SEE radiation hardened TO-257AA
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STRH12P10
O-257AA
DocID022337
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Untitled
Abstract: No abstract text available
Text: STRH8N10 Rad-Hard 100 V, 6 A N-channel Power MOSFET Datasheet - production data Features VDSS ID RDS on Qg 100 V 6A 0.30 Ω 22 nC • Fast switching • 100% avalanche tested • Hermetic package • 70 krad TID SMD0.5 • SEE radiation hardened Applications
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STRH8N10
STRH8N10S1
DocID018504
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Untitled
Abstract: No abstract text available
Text: HFA3724 HARRIS S E M I C O N D U C T O R 400MHz Quadrature IF Modulator/Demodulator January 1997 Description Features Integrates all IF Transmit and Receive Functions The Harris 2.4GHz PRISM chip set is a highly integrated five-chip solution for RF modems employing Direct Sequence
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HFA3724
400MHz
10MHzto
400MHz
HFA3724
HFA3722
500MHz
300MHz
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Untitled
Abstract: No abstract text available
Text: FSL9230D, FSL9230R 3A, -200V, 1.50 Ohm, Rad Hard, SEGR Resistant, P-Channel Power MOSFETs June 1998 Features Description • 3A, -200V, ros ON = 1 -50ii The Discrete Products Operation of Harris Semiconductor has developed a series of Radiation Hardened MOSFETs
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FSL9230D,
FSL9230R
-200V,
O-205AF
254mm)
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E102h
Abstract: No abstract text available
Text: JANSR2N7398 S MAEESS August 1997 Formerly Available As FSL430R4 Radiation Hardened, SEGR Resistant, N-Channel Power MOSFETs Features Description • 2A, 500V, ros ON = 2.50£2 The Discrete Products Operation of Harris Semiconductor has developed a series of Radiation Hardened MOSFETs
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JANSR2N7398
1-800-4-HARRIS
E102h
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Untitled
Abstract: No abstract text available
Text: JANSR2N7402 HARRIS S E M I C O N D U C T O R August 1997 Formerly Available As FSS430R4 Radiation Hardened, SEGR Resistant, N-Channel Power MOSFETs Features Description • 3A, 500V, ros ON = 2.70£2 The Discrete Products Operation of Harris Semiconductor
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JANSR2N7402
1-800-4-HARRIS
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PDF
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406DJ
Abstract: No abstract text available
Text: DG406/407 Vishay Siliconix 16-Ch/Dual 8-Ch High-Performance CMOS Analog Multiplexers FEATURES BENEFITS APPLICATIONS • • • • • • • • • • • • • • • • • • • Low On-Resistance— rDs 0n : 50 Q Low Charge Injection—Q: 15pC
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DG406/407
16-Ch/Dual
DG406
16-channel
DG407
AN203
S-00399--
13-Sep-99
406DJ
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Untitled
Abstract: No abstract text available
Text: H A R R IS X FSS430D, FSS430R S em iconductor 3A, 500V, 2.70 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs June 1998 Features Description • 3A, 500V, ros ON = 2.70£2 The Discrete Products Operation of Harris Semiconductor has developed a series of Radiation Hardened MOSFETs
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FSS430D,
FSS430R
O-257AA
MIL-S-19500
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Untitled
Abstract: No abstract text available
Text: FSL430D, FSL430R 2A, 500V, 2.50 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs Features Description • 2A, 500V, ros ON = 2.50£2 The Discrete Products Operation of Harris Semiconductor has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space
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FSL430D,
FSL430R
36MeV/mg/cm2
O-205AF
254mm)
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Untitled
Abstract: No abstract text available
Text: PLUTO MITEL Dual Mode CDMA/AMPS Baseband Interface SEMICONDUCTOR A dvance Inform ation D S 4 7 2 2 - 1.8 July 1998 T he PLU TO ba seb an d interface circu it is d e sig ned fo r use in dual m ode C D M A /A M P S digital ce llu la r tele ph on es. In the
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ic laf 0001
Abstract: LAF 0001 laf 0001 power IR LFN IRGTI200F06 200A 600V FET 2S0240 50PCL
Text: International n Rectifier PD-9.968B IRGTI200F06 "HALF-BRIDGE" IGBT INT-A-PAK Fast Speed IGBT VCE = 600V .R ugged Design .Sim ple gate-drive .F as t operation up to 10KHz hard switching, or 50K H z resonant .Switching-Loss Rating includes all "tail" losses
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IRGTI200F06
10KHz
50KHz
applicationI200F06
100nH
C-236
ic laf 0001
LAF 0001
laf 0001 power
IR LFN
IRGTI200F06
200A 600V FET
2S0240
50PCL
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Untitled
Abstract: No abstract text available
Text: SUPERSEDED BY MT43C4257A/8A M IC R O N 256K TRIPLE-PORT DRAM X MT43C4257/8 4 T RIPLE-PO RT DRAM 256K X 4 DRAM WITH DUAL 5 12 x4 S A M S FEATURES Three asynchronous, independent, data-access ports Fast access times: 80ns random, 25ns serial Operation and control compatible with 1 Meg VRAM
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MT43C4257A/8A)
MT43C4257/8
500mW
512-cycle
048-bit
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