IRF540Z
Abstract: 4.5V TO 100V INPUT REGULATOR
Text: PD - 94644 IRF540Z AUTOMOTIVE MOSFET HEXFET Power MOSFET Features O O O O O O Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax D VDSS = 100V RDS on = 29.5mΩ
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IRF540Z
O-220AB
IRF1010
IRF540Z
4.5V TO 100V INPUT REGULATOR
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IRF540ZPBF
Abstract: 4.5V TO 100V INPUT REGULATOR
Text: PD - 94827 AUTOMOTIVE MOSFET HEXFET Power MOSFET Features l l l l l l l IRF540ZPbF Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free D VDSS = 100V
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IRF540ZPbF
IRF1010
O-220AB
IRF540ZPBF
4.5V TO 100V INPUT REGULATOR
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IRF540ZS
Abstract: IRF540ZL IRF540Z
Text: PD - 95531A IRF540ZPbF IRF540ZSPbF IRF540ZLPbF Features l l l l l l Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free HEXFET Power MOSFET D RDS on = 26.5mΩ
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5531A
IRF540ZPbF
IRF540ZSPbF
IRF540ZLPbF
O-220AB
AN-994.
O-220AB
IRF540ZS
IRF540ZL
IRF540Z
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Untitled
Abstract: No abstract text available
Text: PD - 94758 IRF540Z IRF540ZS IRF540ZL AUTOMOTIVE MOSFET Features ● ● ● ● ● HEXFET Power MOSFET Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax D VDSS = 100V
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IRF540Z
IRF540ZS
IRF540ZL
AN-994.
O-220AB
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Untitled
Abstract: No abstract text available
Text: PD - 95531A IRF540ZPbF IRF540ZSPbF IRF540ZLPbF Features l l l l l l Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free HEXFET Power MOSFET D VDSS = 100V RDS on = 26.5mΩ
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5531A
IRF540ZPbF
IRF540ZSPbF
IRF540ZLPbF
AN-994.
O-220AB
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PDF
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Untitled
Abstract: No abstract text available
Text: PD - 94827A IRF540ZPbF IRF540ZS IRF540ZL AUTOMOTIVE MOSFET Features l l l l l l Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free only the TO-220AB version is
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4827A
IRF540ZPbF
IRF540ZS
IRF540ZL
O-220AB
AN-994.
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IRF540Z
Abstract: IRF540ZL IRF540ZS
Text: PD - 94758 IRF540Z IRF540ZS IRF540ZL AUTOMOTIVE MOSFET Features ● ● ● ● ● HEXFET Power MOSFET Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax D VDSS = 100V
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IRF540Z
IRF540ZS
IRF540ZL
AN-994.
O-220AB
IRF540Z
IRF540ZL
IRF540ZS
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IRF540Z
Abstract: IRF540ZL IRF540ZS MOSFET IRF540zl
Text: PD - 94758 IRF540Z IRF540ZS IRF540ZL AUTOMOTIVE MOSFET Features ● ● ● ● ● HEXFET Power MOSFET Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax D VDSS = 100V
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IRF540Z
IRF540ZS
IRF540ZL
AN-994.
O-220AB
IRF540Z
IRF540ZL
IRF540ZS
MOSFET IRF540zl
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IRF540Z
Abstract: IRF540ZL IRF540ZS
Text: PD - 95531 IRF540ZPbF IRF540ZSPbF IRF540ZLPbF AUTOMOTIVE MOSFET Features l l l l l l Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free HEXFET Power MOSFET D
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IRF540ZPbF
IRF540ZSPbF
IRF540ZLPbF
AN-994.
O-220AB
IRF540Z
IRF540ZL
IRF540ZS
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PDF
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IRF540Z
Abstract: IRF540ZL IRF540ZS
Text: PD - 95531 IRF540ZPbF IRF540ZSPbF IRF540ZLPbF AUTOMOTIVE MOSFET Features l l l l l l Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free HEXFET Power MOSFET D
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Original
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IRF540ZPbF
IRF540ZSPbF
IRF540ZLPbF
AN-994.
O-220AB
IRF540Z
IRF540ZL
IRF540ZS
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IRF540N
Abstract: MOSFET IRF540n IRF1010 irf1010 applications
Text: PD - 9.1341 IRF540N PRELIMINARY HEXFET Power MOSFET Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated VDSS = 100V RDS on = 0.052Ω ID = 27A Description Fifth Generation HEXFETs from International Rectifier
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IRF540N
O-220
IRF1010
IRF540N
MOSFET IRF540n
IRF1010
irf1010 applications
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IRF540N
Abstract: IRF1010
Text: Previous Datasheet Index Next Data Sheet PD - 9.1341 IRF540N PRELIMINARY HEXFET Power MOSFET Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated VDSS = 100V RDS on = 0.052Ω ID = 27A Description
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IRF540N
O-220
commercial-indust10
IRF540N
IRF1010
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IRF540NPBF
Abstract: IRF1010 94812 4.5v to 100v input regulator
Text: PD - 94812 IRF540NPbF HEXFET Power MOSFET Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated Lead-Free D VDSS = 100V RDS on = 44mΩ G ID = 33A S Description Advanced HEXFET® Power MOSFETs from International
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IRF540NPbF
O-220
O-220AB
IRF1010
IRF540NPBF
IRF1010
94812
4.5v to 100v input regulator
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IRF540NPBF
Abstract: IRF1010 4.5v to 100v input regulator
Text: PD - 94812 IRF540NPbF HEXFET Power MOSFET Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated Lead-Free D VDSS = 100V RDS on = 44mΩ G ID = 33A S Description Advanced HEXFET® Power MOSFETs from International
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IRF540NPbF
O-220
commercial-indus1010
IRF540NPBF
IRF1010
4.5v to 100v input regulator
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Untitled
Abstract: No abstract text available
Text: IRF540A Advanced Power MOSFET FEATURES BVDSS = 100 V Avalanche Rugged Technology RDS on = 0.052 Ω Rugged Gate Oxide Technology Lower Input Capacitance ID = 28 A Improved Gate Charge Extended Safe Operating Area TO-220 Ο 175 C Operating Temperature Lower Leakage Current : 10 µ A (Max.) @ VDS = 100V
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IRF540A
O-220
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Untitled
Abstract: No abstract text available
Text: PD - 94812 IRF540NPbF HEXFET Power MOSFET Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated Lead-Free D VDSS = 100V RDS on = 44mΩ G ID = 33A S Description Advanced HEXFET® Power MOSFETs from International
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IRF540NPbF
O-220
commercial-i1010
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PDF
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Untitled
Abstract: No abstract text available
Text: IRF540N TO-220AB l l l l l l Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated Power MOSFET Description D The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation
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IRF540N
O-220AB
O-220
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IRF540N
Abstract: 91341B 16ans 4.5V TO 100V INPUT REGULATOR
Text: PD - 91341B IRF540N HEXFET Power MOSFET l l l l l l Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated D VDSS = 100V RDS on = 44mΩ G ID = 33A S Description Advanced HEXFET® Power MOSFETs from International
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91341B
IRF540N
O-220
IRF540N
91341B
16ans
4.5V TO 100V INPUT REGULATOR
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IRF540 p-channel MOSFET
Abstract: SEC IRF540 IRF540 IRF540 MOSFET irf540 27 MHz
Text: Tem ic IRF540 Siliconix N-Channel Enhancement Mode Transistor Product Summary V BR DSS (V) 100 r DS(on) (Q ) 0.085 I d (A) 27 TO-22QAB o DRAIN connected to TAB O GD S Top View s N-Channel MOSFET Absolute Maximum Ratings (Tc = 25°C Unless Otherwise Noted)
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OCR Scan
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O-22QAB
IRF540
P-36853--Rev.
IRF540_
IRF540 p-channel MOSFET
SEC IRF540
IRF540
IRF540 MOSFET
irf540 27 MHz
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JB 2256
Abstract: IRF540A irf540a mosfet R/Detector/"detect18+ic"/"CD"/JB 2256
Text: IRF540A Advanced Power MOSEET FEATURES BVDSS - 100 V • Avalanche Rugged Technology ■ Rugged Gate Oxide Technology ■ Lower Input Capacitance ■ Improved Gate Charge ■ Extended Safe Operating Area ■ 175°C Operating Temperature ■ Lower Leakage Current : 10 H A Max. @ V DS= 1 0 0 V
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OCR Scan
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irf540a
30-OTO
T0-220
QQ3b32fl
O-220
500MIN
7Tb414E
DD3b33D
JB 2256
IRF540A
irf540a mosfet
R/Detector/"detect18+ic"/"CD"/JB 2256
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IRF540
Abstract: irf540 27 MHz SEC IRF540 75 LS 541 irf540 "27 MHz" IRF542 irf540 be IRF540 Rg IRF540 SEC NS2N
Text: IRF540/541/542/543 O ' S ilico n ix JLÆ in c o rp o ra te d N-Channel Enhancement Mode Transistors TO-220AB TOP VIEW PRODUCT SUMMARY o PART NUMBER V BR DSS (V ) rDS(ON) ( f i) (A) IRF540 100 0.085 27 IRF541 60 0.085 27 IRF542 100 0.11 24 IRF543 60 0.11 24
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OCR Scan
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IRF540/541/542/543
O-220AB
IRF540
IRF541
IRF542
IRF543
10peration
irf540 27 MHz
SEC IRF540
75 LS 541
irf540 "27 MHz"
irf540 be
IRF540 Rg
IRF540 SEC
NS2N
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PDF
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Untitled
Abstract: No abstract text available
Text: P D -9.1341 International Hk ]Rectifier IRF540N PRELIMINARY HEXFET Power MOSFET • Advanced Process Technology • Dynamic dv/dt Rating • 175°C Operating Temperature • Fast Switching • Fully Avalanche Rated V dss = 100V ^DS on = 0.052Q Id = Description
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OCR Scan
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IRF540N
T0-220
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PDF
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JB 2256
Abstract: IRF540A irf540a mosfet N mosfet 50v 400A FAIRCHILD IRF540A
Text: Advanced IRF540A P o w e r MOSFET FEATURES B V DSS • A valan che R ugged T ech n o lo g y ■ R ugged G ate O xide T e ch n o lo g y ■ Lo w e r Input C a pa citance ■ Im proved G ate C harge ■ E xtended S afe O pe ra ting A rea ■ 175°C O pe ra ting T em pe rature
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OCR Scan
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IRF540A
O-220
JB 2256
IRF540A
irf540a mosfet
N mosfet 50v 400A
FAIRCHILD IRF540A
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PDF
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3s4 MARKING CODE DIODE
Abstract: IRF540NS
Text: PD -9.1342 International [^Rectifier IRF540NS PRELIMINARY HEXFET Power MOSFET • Advanced Process Technology • Surface Mount • Dynamic dv/dt Rating • 175°C Operating Temperature • Fast Switching • Fully Avalanche Rated Vdss= 100V ^D S o n =
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OCR Scan
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IRF540NS
554S2
023LSD
3s4 MARKING CODE DIODE
IRF540NS
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