Untitled
Abstract: No abstract text available
Text: PD - 96030 IRF9540NSPbF IRF9540NLPbF HEXFET Power MOSFET l l l l l l l l Advanced Process Technology Ultra Low On-Resistance 150°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Some Parameters are Different from IRF9540NS/L
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IRF9540NSPbF
IRF9540NLPbF
IRF9540NS/L
-100V
O-262
EIA-418.
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IRF9540N
Abstract: No abstract text available
Text: PD - 96030 IRF9540NSPbF IRF9540NLPbF HEXFET Power MOSFET l l l l l l l l Advanced Process Technology Ultra Low On-Resistance 150°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Some Parameters are Different from IRF9540NS/L
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IRF9540NSPbF
IRF9540NLPbF
IRF9540NS/L
-100V
O-262
EIA-418.
IRF9540N
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PDF
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Untitled
Abstract: No abstract text available
Text: PD - 96030 IRF9540NSPbF IRF9540NLPbF HEXFET Power MOSFET l l l l l l l l Advanced Process Technology Ultra Low On-Resistance 150°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Some Parameters are Different from IRF9540NS/L
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Original
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IRF9540NSPbF
IRF9540NLPbF
IRF9540NS/L
-100V
O-262
EIA-418.
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PDF
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IRF9540L
Abstract: IRF9540S
Text: PD - 91483D IRF9540NS/L Advanced Process Technology Surface Mount IRF9540S l Low-profile through-hole (IRF9540L) l 175°C Operating Temperature l Fast Switching l P-Channel l Fully Avalanche Rated Description HEXFET Power MOSFET l D l VDSS = -100V RDS(on) = 0.117Ω
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91483D
IRF9540NS/L
IRF9540S)
IRF9540L)
-100V
EIA-418.
IRF9540L
IRF9540S
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IRF9540NS
Abstract: IRF9540N IRF9540NL IRF9540L
Text: PD - 91483E IRF9540NS/L Advanced Process Technology Surface Mount IRF9540NS l Low-profile through-hole (IRF9540NL) l 175°C Operating Temperature l Fast Switching l P-Channel l Fully Avalanche Rated Description HEXFET Power MOSFET l D l VDSS = -100V RDS(on) = 0.117Ω
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91483E
IRF9540NS/L
IRF9540NS)
IRF9540NL)
-100V
capabl40
EIA-418.
IRF9540NS
IRF9540N
IRF9540NL
IRF9540L
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PDF
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IRF9540N
Abstract: BU 11A
Text: Previous Datasheet Index Next Data Sheet PD 9.1437 IRF9540N PRELIMINARY HEXFET Power MOSFET l l l l l l Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching P-Channel Fully Avalanche Rated D VDSS = -100V RDS on = 0.117Ω
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IRF9540N
-100V
O-220
IRF9540N
BU 11A
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Untitled
Abstract: No abstract text available
Text: PD - 91483E IRF9540NS/L HEXFET Power MOSFET Advanced Process Technology Surface Mount IRF9540NS l Low-profile through-hole (IRF9540NL) l 175°C Operating Temperature l Fast Switching l P-Channel l Fully Avalanche Rated Description l D l VDSS = -100V RDS(on) = 0.117Ω
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91483E
IRF9540NS/L
IRF9540NS)
IRF9540NL)
-100V
EIA-418.
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PDF
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IRF9540NS
Abstract: IRF9540L IRF9540NL
Text: PD - 91483E IRF9540NS/L Advanced Process Technology Surface Mount IRF9540NS l Low-profile through-hole (IRF9540NL) l 175°C Operating Temperature l Fast Switching l P-Channel l Fully Avalanche Rated Description HEXFET Power MOSFET l D l VDSS = -100V RDS(on) = 0.117Ω
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Original
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91483E
IRF9540NS/L
IRF9540NS)
IRF9540NL)
-100V
EIA-418.
IRF9540NS
IRF9540L
IRF9540NL
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PDF
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Untitled
Abstract: No abstract text available
Text: IRF9540N TO-220AB l l l l l l Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching P-Channel Fully Avalanche Rated Power MOSFET Description D The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation
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IRF9540N
O-220AB
O-220
O-220
-100V
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IRF9540N
Abstract: 100v 23A P-Channel MOSFET SEC IRF9540N datasheet of irf9540n IRF9540n datasheet irf9540n to220ab ir
Text: PD - 91437B IRF9540N HEXFET Power MOSFET l l l l l l Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching P-Channel Fully Avalanche Rated D VDSS = -100V RDS on = 0.117Ω G ID = -23A S Description Fifth Generation HEXFETs from International Rectifier
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91437B
IRF9540N
-100V
O-220
IRF9540N
100v 23A P-Channel MOSFET
SEC IRF9540N
datasheet of irf9540n
IRF9540n datasheet
irf9540n to220ab ir
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IRF9540N
Abstract: datasheet of irf9540n IRF9540n datasheet 7A, 100v fast recovery diode irf9540n to220ab ir D 92 M - 02 DIODE
Text: PD - 91437B IRF9540N HEXFET Power MOSFET l l l l l l Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching P-Channel Fully Avalanche Rated D VDSS = -100V RDS on = 0.117Ω G ID = -23A S Description Fifth Generation HEXFETs from International Rectifier
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91437B
IRF9540N
-100V
O-220
IRF9540N
datasheet of irf9540n
IRF9540n datasheet
7A, 100v fast recovery diode
irf9540n to220ab ir
D 92 M - 02 DIODE
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Untitled
Abstract: No abstract text available
Text: PD - 91437B IRF9540N HEXFET Power MOSFET l l l l l l Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching P-Channel Fully Avalanche Rated D VDSS = -100V RDS on = 0.117Ω G ID = -23A S Description Fifth Generation HEXFETs from International Rectifier
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91437B
IRF9540N
-100V
O-220
commercial-industria245,
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PDF
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Untitled
Abstract: No abstract text available
Text: IRF9540NS/L l l l l l l l Advanced Process Technology Surface Mount IRF9540S Low-profile through-hole (IRF9540L) 175°C Operating Temperature Fast Switching P-Channel Fully Avalanche Rated TO-263 TO-262 Description The D2Pak is a surface mount power package capable of
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IRF9540NS/L
IRF9540S)
IRF9540L)
O-263
O-262
-100V
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100v 23A P-Channel MOSFET
Abstract: IRF9540L IRF9540S
Text: PD - 91483C IRF9540NS/L HEXFET Power MOSFET Advanced Process Technology Surface Mount IRF9540S l Low-profile through-hole (IRF9540L) l 175°C Operating Temperature l Fast Switching l P-Channel l Fully Avalanche Rated Description l D l VDSS = -100V RDS(on) = 0.117Ω
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91483C
IRF9540NS/L
IRF9540S)
IRF9540L)
-100V
100v 23A P-Channel MOSFET
IRF9540L
IRF9540S
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PDF
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IRF9540L
Abstract: IRF9540NS IRF9540S
Text: 2002-03-01 PRODUKTINFORMATION Vi reserverar oss mot fel samt förbehåller oss rätten till ändringar utan föregående meddelande ELFA artikelnr 71-164-03 IRF9540NS HEXFET D2Pak PD - 91483C IRF9540NS/L HEXFET Power MOSFET Advanced Process Technology Surface Mount IRF9540S
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IRF9540NS
91483C
IRF9540NS/L
IRF9540S)
IRF9540L)
-100V
IRF9540L
IRF9540S
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PDF
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4.5V TO 100V INPUT REGULATOR
Abstract: No abstract text available
Text: PD - 95665 IRFP9140NPbF l l l l l l l Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temperature P-Channel Fast Switching Fully Avalanche Rated Lead-Free HEXFET Power MOSFET D VDSS = -100V RDS on = 0.117Ω G Description ID = -23A S Fifth Generation HEXFETs from International Rectifier
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IRFP9140NPbF
-100V
O-247
O-247AC
IRFPE30
4.5V TO 100V INPUT REGULATOR
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PDF
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irfp9140npbf
Abstract: 4.5V TO 100V INPUT REGULATOR
Text: PD - 95665 IRFP9140NPbF l l l l l l l Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temperature P-Channel Fast Switching Fully Avalanche Rated Lead-Free HEXFET Power MOSFET D VDSS = -100V RDS on = 0.117Ω G Description ID = -23A S Fifth Generation HEXFETs from International Rectifier
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IRFP9140NPbF
-100V
O-247
O-247AC
IRFPE30
irfp9140npbf
4.5V TO 100V INPUT REGULATOR
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PDF
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IRF9540N
Abstract: of irf9540n irf9540n to220ab ir
Text: PD 9.1437A International l R Rectifier IRF9540N PRELIMINARY HEXFET Power MOSFET • Advanced Process Technology • Dynamic dv/dt Rating • 175°C Operating Temperature • Fast Switching • P-Channel • Fully Avalanche Rated Vqss = -100V Ftas on = 0 .1 1 7 Q
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OCR Scan
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IRF9540N
-100V
O-220
IRF9540N
of irf9540n
irf9540n to220ab ir
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PDF
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Untitled
Abstract: No abstract text available
Text: PD 9.1437A International K 3R Rectifier IRF9540N PRELIMINARY H EXFET Pow er M O SFE T • Advanced Process Technology • Dynamic dv/dt Rating • 175°C Operating Temperature • Fast Switching • P-Channel • Fully Avalanche Rated V q ss = -1 0 0 V F b s o n = 0 . 1 1 7 Q
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OCR Scan
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IRF9540N
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PDF
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Untitled
Abstract: No abstract text available
Text: PD -9.1483 International IQR Rectifier IRF9540NS PRELIMINARY HEXFET Power MOSFET • • • • • • • Advanced Process Technology Surface Mount Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching P-Channel Fully Avalanche Rated V d s s = -1 0 0 V
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OCR Scan
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IRF9540NS
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PDF
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RF9540
Abstract: No abstract text available
Text: PD -91483C International Iö R Rectifier IRF9540NS/L HEXFET Power MOSFET • Advanced Process Technology • Surface Mount I RF9540S • Low-profile through-hole (IRF9540L) • 175°C Operating Temperature • Fast Switching • P-Channel • Fully Avalanche Rated
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OCR Scan
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RF9540S)
IRF9540L)
RF9540
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PDF
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IRF9540N equivalent
Abstract: No abstract text available
Text: P D -9.1487 International XGR Rectifier IRFI9540N PRELIMINARY HEXFET Power MOSFET • • • • • • Advanced Process Technology Isolated Package High Voltage Isolation = 2.5KVRMS Sink to Lead Creepage Dist. = 4.8mm P-Channel Fully Avalanche Rated
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OCR Scan
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IRFI9540N
O-22O
IRF9540N equivalent
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PDF
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IRFP9140N
Abstract: 100v 23A P-Channel MOSFET 9140N 1492-A
Text: I , ,• I P D - 9 .1492A In ternational 10R Rectifier IR F P 9140N P R E L IM INARY HEXFET Power MOSFET • Advanced Process Technology • Dynamic dv/dt Rating • 175 °C Operating Temperature • P-Channel • Fast Switching • Fully Avalanche Rated
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OCR Scan
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9140N
-100V
O-247
IRFP9140N
100v 23A P-Channel MOSFET
9140N
1492-A
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PDF
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IRF9540N equivalent
Abstract: 117Q 3A diode International Rectifier IRFI9540N 100v 3A silicon controlled rectifier of irf9540n
Text: PD - 9.1487B International TOR Rectifier IRFI9540N PRELIMINARY HEXFET Power MOSFET • • • • • • A dvanced P rocess T echnolog y Isolated P ackage High V oltage Isolation = 2 .5K V R M S S ink to Lead C reepage Dist. = 4.8m m P -C ha nn e l
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OCR Scan
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1487B
IRFI9540N
O-220
IRF9540N equivalent
117Q
3A diode International Rectifier
IRFI9540N
100v 3A silicon controlled rectifier
of irf9540n
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