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    Abstract: 28C256ERP f2807
    Text: 32K X 8 EEPROM SPACE ELECTRONICS INC. 28C256ERP SPACE PRODUCTS GROUP A14 1 28 VCC A12 2 27 WE A7 3 26 A13 A6 4 25 A8 A5 5 24 A9 A4 6 23 A11 A3 7 22 OE A2 8 21 A10 A1 9 20 CE A0 10 19 I/O7 I/O0 11 18 I/O6 I/O1 12 17 I/O5 I/O3 13 16 I/O4 GND 14 15 I/O3 SEi 28C256ERP


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    PDF 28C256ERP A0-15 A6-14 F28-07 99Rev4 F28-13 YMB 24 28C256ERP f2807

    28C256TRP-120

    Abstract: 28C256TRP-150
    Text: SPACE ELECTRONICS INC. 256K-BIT EEPROM - 32K X 8 EEPROM SPACE PRODUCTS 28C256TRP A14 1 28 VCC A12 2 27 WE VCC A7 3 26 A13 GND A6 4 25 A8 A5 5 24 A9 A4 6 23 A11 A3 7 22 OE A2 8 21 A10 A1 9 20 CE A0 10 19 I/O 7 I/O 0 11 18 I/O 6 I/O 1 12 17 I/O 5 I/O 2 13 16


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    PDF 256K-BIT 28C256TRP 99Rev3 28C256TRP-120 28C256TRP-150

    AT28C256 rad

    Abstract: 197a8 radiation hardened prom WY smd transistor
    Text: 32K x 8 Radiation Hardened Programmable Read Only Memory PROM – 5 V Product Description Features Radiation Other • Fabricated with Bulk CMOS 0.8 µm Process • Read/Write Cycle Times ≤45 ns, (TC = -55°C to 125°C) • Total Dose Hardness through 2 × 105 rad(Si)


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    PDF 5962R96891 197A807 28-Lead 28C256 AT28C256. AS9000, PUBS-01-B22-Q-011 MVA01-012 AT28C256 rad 197a8 radiation hardened prom WY smd transistor

    197A807

    Abstract: BAE Systems prom 32K x 8 fuse smd code N WY smd transistor BAE Systems b050 TRANSISTOR PACKAGE T 4-LEAD SMD TOP VIEW VDD 1. GND 2 smd atmel AT28C256 rad smd transistor a4
    Text: 32K x 8 Radiation Hardened Programmable Read Only Memory PROM – 5 V 197A807 Product Description Features Radiation • Fabricated with Bulk CMOS 0.8 µm Process • Total Dose Hardness through 2x105 rad(Si) • Neutron Hardness through 1x1012 N/cm2 • SEU Immune (No Latches)


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    PDF 197A807 2x105 1x1012 5962R96891 28-Lead 28C256 AT28C256. AS9000, 197A807 BAE Systems prom 32K x 8 fuse smd code N WY smd transistor BAE Systems b050 TRANSISTOR PACKAGE T 4-LEAD SMD TOP VIEW VDD 1. GND 2 smd atmel AT28C256 rad smd transistor a4

    prom 238A790

    Abstract: 238A790 BAE Systems prom 32K x 8 AEFJANTXV1N4100-1-BAE/TR/BAE ppi interface 1007 S/Stag Programmer Orbit AS9000 unisite 28C256 BAE Systems
    Text: 32K x 8 Radiation Hardened Programmable Read Only Memory PROM – 3.3V 238A790 Product Description Features Radiation • Fabricated with Bulk CMOS 0.8 µm Process • Total Dose Hardness through 2x105 rad(Si) • Neutron Hardness through 1x1012 N/cm2 • SEU Immune (No Latches)


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    PDF 238A790 2x105 1x1012 28-Lead 28C256 AT28C256. AS9000, prom 238A790 238A790 BAE Systems prom 32K x 8 AEFJANTXV1N4100-1-BAE/TR/BAE ppi interface 1007 S/Stag Programmer Orbit AS9000 unisite BAE Systems

    prom 238A790

    Abstract: AT28C256 rad WY smd transistor 238A790 BAE Systems prom 32K x 8 VT101 Atmel PART DATE CODE K109 AEFJANTXV1N4100-1-BAE/TR/BAE
    Text: 238A790 32K x 8 Read Only Memory PROM – 3.3V Product Description Features Radiation • Fabricated with Bulk CMOS 0.8 µm Process • Total Dose Hardness through 2x105 rad(Si) • Neutron Hardness through 1x1012 N/cm2 • SEU Immune (No Latches) • Latchup Free


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    PDF 238A790 28-Lead 2x105 1x1012 28C256 AT28C256. AS9000, x5040) prom 238A790 AT28C256 rad WY smd transistor 238A790 BAE Systems prom 32K x 8 VT101 Atmel PART DATE CODE K109 AEFJANTXV1N4100-1-BAE/TR/BAE

    PIC16F72 inverter ups

    Abstract: UPS inverter PIC16F72 PIC16F676 inverter hex code 16F877 with sd-card and lcd project circuit diagram wireless spy camera NH82801GB xmega-a4 online ups service manual back-ups ES 500 ARM LPC2148 INTERFACING WITH RFID circuit diagram realtek rtd 1186
    Text: the solutions are out there you just haven’t registered yet. RoadTest the newest products in the market! View the latest news, design support and hot new technologies for a range of applications Join the RoadTest group and be in with a chance to trial exclusive new products for free. Plus, read


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    PDF element-14 element14. element14, PIC16F72 inverter ups UPS inverter PIC16F72 PIC16F676 inverter hex code 16F877 with sd-card and lcd project circuit diagram wireless spy camera NH82801GB xmega-a4 online ups service manual back-ups ES 500 ARM LPC2148 INTERFACING WITH RFID circuit diagram realtek rtd 1186

    STR 6656

    Abstract: transistor str 6656 13001 TRANSISTOR Transistor mcr 22-8 413 mark 74w npn SI 13003 str 12006 atmel 0744 13001 TRANSISTOR equivalent str 10006
    Text: Version 2.0 Produced in June 1997 R SSharp Programmable Controller New Satellite JW10 User's Manual We thank you for your purchase of the SHARP programmable controller JW10. Carefully read this user's manual and the JW10 instruction manual attached to the system


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    PDF ZM-40D/L, ZM-61E/T, ZM-70D/T Appendix17 ZM-31SE) RS422] Appendix18 STR 6656 transistor str 6656 13001 TRANSISTOR Transistor mcr 22-8 413 mark 74w npn SI 13003 str 12006 atmel 0744 13001 TRANSISTOR equivalent str 10006

    Untitled

    Abstract: No abstract text available
    Text: 28C256A Technology, Incorporated 256K High Speed EEPROM August 1992 FEATURES • ■ M ilitary, Range • -5 5 ° C • —40° C • 0 ° C to ■ Data Protection Extended a n d Com m ercial Temperature • Hardware: Power Up/Down Protection Circuitry • JEDEC Approved Software Write Protection


    OCR Scan
    PDF 28C256A 50nsec 883HEH MD400111/A