BCY71 BS
Abstract: No abstract text available
Text: BCY71 Dimensions in mm inches . Bipolar PNP Device in a Hermetically sealed TO18 Metal Package. 5.84 (0.230) 5.31 (0.209) 4.95 (0.195) 4.52 (0.178) Bipolar PNP Device. VCEO = 45V 0.48 (0.019) 0.41 (0.016) dia. IC = 0.2A All Semelab hermetically sealed products
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BCY71
O206AA)
1/10m
2-Aug-02
BCY71 BS
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BCY72
Abstract: BCY70 equivalent BCY70 BCY71 semelab bcy71 transistor bcy70
Text: BCY70 BCY71 BCY72 GENERAL PURPOSE PNP SILICON TRANSISTOR MECHANICAL DATA Dimensions in mm inches 5.84 (0.230) 5.31 (0.209) 12.7 (0.500) min. 5.33 (0.210) 4.32 (0.170) 4.95 (0.195) 4.52 (0.178) 0.48 (0.019) 0.41 (0.016) dia. DESCRIPTION The BCY70, BCY71 & BCY72 are silicon
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BCY70
BCY71
BCY72
BCY70,
BCY72
O-206AA)
BCY70 equivalent
BCY70
BCY71
semelab bcy71
transistor bcy70
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BCY71DCSM
Abstract: LE17
Text: SILICON EPITAXIAL PNP TRANSISTOR BCY71DCSM • Low Current / Low Voltage Transistor In A Dual Ceramic Hermetic Package • Designed For General Purpose Industrial Applications • Screening Options Available ABSOLUTE MAXIMUM RATINGS TA = 25°C unless otherwise stated
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BCY71DCSM
-200mA
350mW
500mW
MO-041BB)
BCY71DCSM
LE17
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PDF
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Untitled
Abstract: No abstract text available
Text: SILICON EPITAXIAL PNP TRANSISTOR BCY71DCSM • Low Current / Low Voltage Transistor In A Dual Ceramic Hermetic Package • Designed For General Purpose Industrial Applications • Screening Options Available ABSOLUTE MAXIMUM RATINGS TA = 25°C unless otherwise stated
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BCY71DCSM
-200mA
350mW
500mW
MO-041BB)
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250M
Abstract: BCY71DCSM
Text: BCY71DCSM Dimensions in mm inches . 1 4 A 6 5 6.22 ± 0.13 (0.245 ± 0.005) 0.23 rad. (0.009) A = 1.27 ± 0.13 (0.05 ± 0.005) LCC2 (MO-041BB) Pinouts Pin 1 – Collector 1 Pin 2 – Base 1 Pin 3 – Base 2 Parameter 4.32 ± 0.13 (0.170 ± 0.005) 3 2 1.40 ± 0.15
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BCY71DCSM
MO-041BB)
1/10m
2-Aug-02
250M
BCY71DCSM
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PDF
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BCY70
Abstract: BCY71 BCY72 transistor bcy70 BCY70CSM BCY71CSM BCY72CSM bcy71 compatible
Text: BCY70CSM BCY71CSM BCY72CSM MECHANICAL DATA Dimensions in mm inches 0.31 rad. (0.012) 3 2 0.76 ± 0.15 (0.03 ± 0.006) 2.54 ± 0.13 (0.10 ± 0.005) 0.51 ± 0.10 (0.02 ± 0.004) HIGH SPEED MEDIUM POWER PNP SWITCHING TRANSISTOR 1 1.91 ± 0.10 (0.075 ± 0.004)
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BCY70CSM
BCY71CSM
BCY72CSM
BCY70
BCY71
BCY72
BCY70
BCY72
-10mA
BCY71
transistor bcy70
BCY70CSM
BCY71CSM
BCY72CSM
bcy71 compatible
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PDF
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Untitled
Abstract: No abstract text available
Text: BCY70CSM BCY71CSM BCY72CSM MECHANICAL DATA Dimensions in mm inches 0.31 rad. (0.012) 3 2 0.76 ± 0.15 (0.03 ± 0.006) 2.54 ± 0.13 (0.10 ± 0.005) 0.51 ± 0.10 (0.02 ± 0.004) HIGH SPEED MEDIUM POWER PNP SWITCHING TRANSISTOR 1 1.91 ± 0.10 (0.075 ± 0.004)
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BCY70CSM
BCY71CSM
BCY72CSM
BCY70
BCY71
BCY72
BCY70
BCY72
-10mA
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BC560AP
Abstract: 2sa720 semi KT313A LOW-POWER SILICON PNP BC212AP KT313B BC454C 2SA1115 tBc560b MM1614
Text: RF LOW-POWER SILICON PNP Item Number Part Number V BR CEO 5 10 BCY79A BCY79A A5T3504 2N4452 2N4452 2N4452 BCl77-6 BCl77-6 BCY79B BCY79B ~g~~~~111 15 20 BCl77B BC204B BC416A BC416B BC416AP BC416P BC251B BC261B ~g~~~~ 25 30 BCY79C BC416BP BCX79X BC251C BC251C
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BCY79A
A5T3504
2N4452
BCl77-6
BCY79B
BC560AP
2sa720 semi
KT313A
LOW-POWER SILICON PNP
BC212AP
KT313B
BC454C
2SA1115
tBc560b
MM1614
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BZX85C12V
Abstract: TOSHIBA 2N3055 bta41-600b application BTA41-600B firing circuit TAB 429 H toshiba BZX85C20V SCR tyn612 pin configuration picaxe TYN612 specification 2SA1085E
Text: SEMICONDUCTORS DISCRETE DEVICES Cathode Anode DO-15 DO-201AD 6.8 x 3.5mm 9.5 x 5.3mm Anode Cathode TO-220AC Fast recovery diodes page 427 Schottky power diodes page 428 Isolated tab triacs page 430 Anode 1 Gate Anode 2 Bridge rectifiers Current regulating diodes
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DO-15
DO-201AD
O-220AC
T0202-3
STGP3NB60HD*
STGP7NB60HD*
STGP3NB60HD
STGP7NB60HD
BZX85C12V
TOSHIBA 2N3055
bta41-600b application
BTA41-600B firing circuit
TAB 429 H toshiba
BZX85C20V
SCR tyn612 pin configuration
picaxe
TYN612 specification
2SA1085E
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2n3866s
Abstract: DIODE 69a LM 2N3904CSM 2N3904DCSM 2N3904D LM7805sm 2N3055E LM7808S LCC3 weight bfy82
Text: M il / Aerospace Division Sem elab HERMETIC SURFACE MOUNT PACKAGES SEMELAB offers seven ceramic package styles intended for use in Space Vehicles, Aircraft and other critical applications all intended for Surface Mount Applications. SOT23 HERMETIC CERAMIC SURFACE MOUNT PACKAGE LCC1
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OCR Scan
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BYV34-300SM
BYV34-400ASM
BYV34--
400RSM
400SM
BYV34-500ASM
BYV34-500RSM
BYV34-500SM
LM137-SM
2n3866s
DIODE 69a LM
2N3904CSM
2N3904DCSM
2N3904D
LM7805sm
2N3055E
LM7808S
LCC3 weight
bfy82
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BD106
Abstract: BD107A BCY91 BCY39A BCY56 t01b 250M BCY40A BCY58 BCY59
Text: 37E D SEMELAB LT» 0133107 GQQ0037 3 • SflLB l-L. , ;V - r |- L i -, '-'.- - ' V ^ »■— T - A i* r r m l . 'i ? * * - . Reliability Option Polarity BCY39A BCY40A BCY56 BCY58 BCY59 HI-REL HI-REL S C REEN HI-REL HI-REL PNP PNP NPN NPN NPN TO 5 TO 5 TOI 8
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OCR Scan
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GQ00037
BCY39A
BCY40A
BCY56
BCY58
BCY59
BCY70
50min
l/10m
BCY71
BD106
BD107A
BCY91
t01b
250M
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y51 h 120c
Abstract: bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711
Text: Towers' International Transistor Selector ! o Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U pdate Three London: NEW YORK
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OCR Scan
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500MA
500MA
240MWF
240MWF
y51 h 120c
bd124
KT368
BFQ59
Silec Semiconductors
BD214
al103
AFY18
bd192
MM1711
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