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    SEMI 2114UCB Search Results

    SEMI 2114UCB Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TRS8E65H Toshiba Electronic Devices & Storage Corporation SiC Schottky Barrier Diode (SBD), 650 V, 8 A, TO-220-2L Visit Toshiba Electronic Devices & Storage Corporation
    TBAW56 Toshiba Electronic Devices & Storage Corporation Switching Diode, 80 V, 0.215 A, SOT23 Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TRS10E65H Toshiba Electronic Devices & Storage Corporation SiC Schottky Barrier Diode (SBD), 650 V, 10 A, TO-220-2L Visit Toshiba Electronic Devices & Storage Corporation

    SEMI 2114UCB Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    ic 2114

    Abstract: 2114 static ram memory ic 2114 pin out
    Text: SEMI 2114 STATIC, TTL IN/OUT 1024x4 N-MOS RAM's FEATURES • 1024 words x 4 bits • Three access times 200, 300, and 450 nsec • Low operating power — 175 mW typical • Common output bus • Three-state output drivers • Fully STATIC — no clock or refresh


    OCR Scan     		1024x4 18-pin ic 2114 2114 static ram memory ic 2114 pin out PDF

    2114 static ram

    Abstract: 2114-UCB L2114-2CB RAM 2114 L2114-3CE 2114-2CB semi 2114ucb L2114-2CE EMM Semi L2114UCB
    Text: • 1024 words x 4 bits • T h ree access times 200, 300, and 450 nsec • Low operating power — 175 m W typical • Standard pow er — 222 m W typical • Com mon output bus • Three-state output drivers • Fully S T A T IC — no clock or refresh


    OCR Scan     		1024x4 18-pin 2114 static ram 2114-UCB L2114-2CB RAM 2114 L2114-3CE 2114-2CB semi 2114ucb L2114-2CE EMM Semi L2114UCB PDF