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    SEMICONDUCTOR BODY MARKING Search Results

    SEMICONDUCTOR BODY MARKING Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TPHR7404PU Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 0.00074 Ω@10V, SOP Advance, U-MOS-H Visit Toshiba Electronic Devices & Storage Corporation
    MG800FXF1JMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    SEMICONDUCTOR BODY MARKING Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    202 sod57

    Abstract: DS30034 NI 4001
    Text: SF4001 - SF4007 1.0A ULTRA-FAST RECOVERY GLASS BODY RECTIFIER POWER SEMICONDUCTOR Features • • • • Hermetically Sealed Glass Body Construction Fast Switching for High Efficiency Surge Overload Rating to 30A Peak Low Reverse Leakage Current A A B C


    Original     		PDF SF4001 SF4007 OD-57, MIL-STD-202, OD-57 DS30034 202 sod57 NI 4001

    Untitled

    Abstract: No abstract text available
    Text: BYT40Y 1.0A HIGH VOLTAGE GLASS BODY RECTIFIER POWER SEMICONDUCTOR Features • • • Hermetically Sealed Glass Body Construction High Voltage to 1600V with Low Leakage Surge Overload Rating to 25A Peak A A B C Mechanical Data • • • • • D Case: DOT-30B, Glass


    Original     		PDF BYT40Y DOT-30B, MIL-STD-202, DOT-30B DS30032

    3040P

    Abstract: 3040pt mbr3050pt-mbr3060pt 3035PT 3050PT 3060PT 2923 MARKING
    Text: SENSITRON MBR3030PT -MBR3060PT SEMICONDUCTOR Technical Data Data Sheet 2923, Rev.- MBR3030PT-MBR3060PT 30A SCHOTTKY BARRIER RECTIFIER Mechanical Data: • Case: Molded Plastic • Polarity: As Marked on Body • Weight: 5.6 grams approx. • Mounting Position: Any • Marking: Type Number


    Original     		PDF MBR3030PT -MBR3060PT MBR3030PT-MBR3060PT specificallMBR3045PT MBR3050PT-MBR3060PT MBR3035PT-MBR3045PT 3040P 3040pt mbr3050pt-mbr3060pt 3035PT 3050PT 3060PT 2923 MARKING

    3060PT

    Abstract: 3035PT 3045P 2923 MARKING
    Text: SENSITRON MBR3030PT -MBR3060PT SEMICONDUCTOR Technical Data Data Sheet 2923, Rev.- MBR3030PT-MBR3060PT 30A SCHOTTKY BARRIER RECTIFIER Mechanical Data: • Case: Molded Plastic • Polarity: As Marked on Body • Weight: 5.6 grams approx. • Mounting Position: Any • Marking: Type Number


    Original     		PDF MBR3030PT -MBR3060PT MBR3030PT-MBR3060PT 3060PT 3035PT 3045P 2923 MARKING

    Untitled

    Abstract: No abstract text available
    Text: 1T1G thru 1T7G Taiwan Semiconductor CREAT BY ART Glass Passivated Rectifiers FEATURES - Low forward voltage drop - High current capability - High reliability - High surge current capability - 3mm miniature body - Compliant to RoHS Directive 2011/65/EU and


    Original     		PDF 2011/65/EU 2002/96/EC JESD22-B102 D1407004

    Untitled

    Abstract: No abstract text available
    Text: SEMICONDUCTOR 2N7002KE TECHNICAL DATA N Channel MOSFET INTERFACE AND SWITCHING APPLICATION. FEATURES ・ESD Protected 2000V. Human Body Model E B ・High density cell design for low RDS(ON). ・Voltage controlled small signal switch. D H ・High-speed line driver.


    Original     		PDF 2N7002KE

    MBR3060PTG

    Abstract: No abstract text available
    Text: SENSITRON MBR3030PT - G -MBR3060PT-G SEMICONDUCTOR Green Products Technical Data Data Sheet 3491, Rev.- MBR3030PT-G-MBR3060PT-G 30A SCHOTTKY BARRIER RECTIFIER Mechanical Data: • Case: Molded Plastic • Polarity: As Marked on Body • Weight: 5.6 grams approx. • Mounting


    Original     		PDF MBR3030PT -MBR3060PT-G MBR3030PT-G-MBR3060PT-G MBR3060PTG

    Untitled

    Abstract: No abstract text available
    Text: N-Channel PowerTrench SyncFETTM 25 V, 90 A, 1.5 mΩ Features General Description „ SyncFETTM Schottky Body Diode This N-Channel SyncFETTM is produced using Fairchild Semiconductor’s advanced PowerTrench® process. Advancements in both silicon and package technologies have


    Original     		PDF

    Untitled

    Abstract: No abstract text available
    Text: 1T1 thru 1T7 Taiwan Semiconductor CREAT BY ART Silicon Rectifiers FEATURES - Low forward voltage drop - High current capability - High reliability - High surge current capability - 3mm miniature body - Compliant to RoHS Directive 2011/65/EU and in accordance to WEEE 2002/96/EC


    Original     		PDF 2011/65/EU 2002/96/EC JESD22-B102 50mVp-p D1401031

    FDMS2508SDC

    Abstract: a2232
    Text: N-Channel Dual CoolTM PowerTrench SyncFETTM 25 V, 49 A, 1.95 mΩ Features General Description „ Dual CoolTM Top Side Cooling PQFN package „ SyncFET Schottky Body Diode This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench®


    Original     		PDF

    FDMC2512SDC

    Abstract: No abstract text available
    Text: FDMC2512SDC N-Channel Dual CoolTM PowerTrench SyncFETTM 25 V, 40 A, 2.0 mΩ Features „ Dual CoolTM General Description Top Side Cooling PQFN package „ SyncFET Schottky Body Diode This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced


    Original     		PDF FDMC2512SDC FDMC2512SDC

    FDMS2502SDC

    Abstract: No abstract text available
    Text: FDMS2502SDC N-Channel Dual CoolTM PowerTrench SyncFETTM 25 V, 49 A, 1.2 mΩ Features General Description „ Dual CoolTM Top Side Cooling PQFN package „ SyncFET Schottky Body Diode This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced


    Original     		PDF FDMS2502SDC FDMS2502SDC

    Untitled

    Abstract: No abstract text available
    Text: N-Channel PowerTrench SyncFETTM 25 V, 60 A, 2.8 mΩ Features General Description „ SyncFETTM Schottky Body Diode This N-Channel SyncFETTM is produced using Fairchild Semiconductor’s advanced PowerTrench® process. Advancements in both silicon and package technologies have


    Original     		PDF

    Untitled

    Abstract: No abstract text available
    Text: N-Channel PowerTrench SyncFETTM 25 V, 60 A, 2.8 mΩ General Description Features ̈ SyncFETTM Schottky Body Diode This N-Channel SyncFETTM is produced using Fairchild Semiconductor’s advanced PowerTrench® process. Advancements in both silicon and package technologies have


    Original     		PDF

    MO-240

    Abstract: 10dc rectifier
    Text: N-Channel PowerTrench SyncFETTM 25 V, 60 A, 2.8 mΩ Features General Description „ SyncFETTM Schottky Body Diode This N-Channel SyncFETTM is produced using Fairchild Semiconductor’s advanced PowerTrench® process. Advancements in both silicon and package technologies have


    Original     		PDF FDMS8570SDC FDMS8570SDC MO-240 10dc rectifier

    FDMS2506SDC

    Abstract: No abstract text available
    Text: FDMS2506SDC N-Channel Dual CoolTM PowerTrench SyncFETTM 25 V, 49 A, 1.45 mΩ Features „ Dual Cool General Description TM Top Side Cooling PQFN package „ SyncFET Schottky Body Diode This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced


    Original     		PDF FDMS2506SDC FDMS2506SDC

    Untitled

    Abstract: No abstract text available
    Text: FDMS2502SDC N-Channel Dual CoolTM PowerTrench SyncFETTM 25 V, 49 A, 1.2 mΩ Features General Description „ Dual CoolTM Top Side Cooling PQFN package „ SyncFET Schottky Body Diode This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced


    Original     		PDF FDMS2502SDC FDMS2502SDC

    Untitled

    Abstract: No abstract text available
    Text: N-Channel PowerTrench SyncFETTM 25 V, 90 A, 1.5 mΩ Features General Description „ SyncFETTM Schottky Body Diode This N-Channel SyncFETTM is produced using Fairchild Semiconductor’s advanced PowerTrench® process. Advancements in both silicon and package technologies have


    Original     		PDF FDMS8558S FDMS8558S

    Untitled

    Abstract: No abstract text available
    Text: 1T1 thru 1T7 Taiwan Semiconductor CREAT BY ART Silicon Rectifiers FEATURES - Low forward voltage drop - High current capability - High reliability - High surge current capability - 3mm miniature body - Compliant to RoHS Directive 2011/65/EU and in accordance to WEEE 2002/96/EC


    Original     		PDF 2011/65/EU 2002/96/EC JESD22-B102 D1401031

    Untitled

    Abstract: No abstract text available
    Text: FDMS3006SDC N-Channel Dual CoolTM PowerTrench SyncFETTM 30 V, 90 A, 1.9 mΩ Features General Description „ Dual CoolTM Top Side Cooling PQFN package „ SyncFET Schottky Body Diode This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced


    Original     		PDF FDMS3006SDC

    Untitled

    Abstract: No abstract text available
    Text: N-Channel Dual CoolTM PowerTrench SyncFETTM 25 V, 40 A, 3.5 mΩ Features General Description ̈ Dual CoolTM Top Side Cooling PQFN package ̈ SyncFET Schottky Body Diode This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench®


    Original     		PDF

    MO-240

    Abstract: No abstract text available
    Text: N-Channel PowerTrench SyncFETTM 25 V, 90 A, 1.5 mΩ Features General Description „ SyncFETTM Schottky Body Diode This N-Channel SyncFETTM is produced using Fairchild Semiconductor’s advanced PowerTrench® process. Advancements in both silicon and package technologies have


    Original     		PDF FDMS8558SDC FDMS8558SDC MO-240

    Untitled

    Abstract: No abstract text available
    Text: N-Channel PowerTrench SyncFETTM 25 V, 70 A, 1.8 mΩ Features General Description „ SyncFETTM Schottky Body Diode This N-Channel SyncFETTM is produced using Fairchild Semiconductor’s advanced PowerTrench® process. Advancements in both silicon and package technologies have


    Original     		PDF FDMS8560S FDMS8560S

    BYT40Y

    Abstract: No abstract text available
    Text: BYT 40 Y VISHAY 1.0A HIGH VOLTAGE GLASS BODY RECTIFIER LITEM ZI y POWER SEMICONDUCTOR Features • • • Hermetically Sealed Glass Body Construction High Voltage to 1600V with Low Leakage Surge Overload Rating to 25A Peak Mechanical Data_


    OCR Scan     		PDF BYT40Y DOT-30B, MIL-STD-202, BYT40Y DS30032