BYT40Y
Abstract: No abstract text available
Text: BYT 40 Y VISHAY 1.0A HIGH VOLTAGE GLASS BODY RECTIFIER LITEM ZI y POWER SEMICONDUCTOR Features • • • Hermetically Sealed Glass Body Construction High Voltage to 1600V with Low Leakage Surge Overload Rating to 25A Peak Mechanical Data_
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OCR Scan
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BYT40Y
DOT-30B,
MIL-STD-202,
BYT40Y
DS30032
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PDF
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202 sod57
Abstract: DS30034 NI 4001
Text: SF4001 - SF4007 1.0A ULTRA-FAST RECOVERY GLASS BODY RECTIFIER POWER SEMICONDUCTOR Features • • • • Hermetically Sealed Glass Body Construction Fast Switching for High Efficiency Surge Overload Rating to 30A Peak Low Reverse Leakage Current A A B C
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SF4001
SF4007
OD-57,
MIL-STD-202,
OD-57
DS30034
202 sod57
NI 4001
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PDF
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Untitled
Abstract: No abstract text available
Text: BYT40Y 1.0A HIGH VOLTAGE GLASS BODY RECTIFIER POWER SEMICONDUCTOR Features • • • Hermetically Sealed Glass Body Construction High Voltage to 1600V with Low Leakage Surge Overload Rating to 25A Peak A A B C Mechanical Data • • • • • D Case: DOT-30B, Glass
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BYT40Y
DOT-30B,
MIL-STD-202,
DOT-30B
DS30032
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PDF
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3040P
Abstract: 3040pt mbr3050pt-mbr3060pt 3035PT 3050PT 3060PT 2923 MARKING
Text: SENSITRON MBR3030PT -MBR3060PT SEMICONDUCTOR Technical Data Data Sheet 2923, Rev.- MBR3030PT-MBR3060PT 30A SCHOTTKY BARRIER RECTIFIER Mechanical Data: • Case: Molded Plastic • Polarity: As Marked on Body • Weight: 5.6 grams approx. • Mounting Position: Any • Marking: Type Number
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MBR3030PT
-MBR3060PT
MBR3030PT-MBR3060PT
specificallMBR3045PT
MBR3050PT-MBR3060PT
MBR3035PT-MBR3045PT
3040P
3040pt
mbr3050pt-mbr3060pt
3035PT
3050PT
3060PT
2923 MARKING
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PDF
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3060PT
Abstract: 3035PT 3045P 2923 MARKING
Text: SENSITRON MBR3030PT -MBR3060PT SEMICONDUCTOR Technical Data Data Sheet 2923, Rev.- MBR3030PT-MBR3060PT 30A SCHOTTKY BARRIER RECTIFIER Mechanical Data: • Case: Molded Plastic • Polarity: As Marked on Body • Weight: 5.6 grams approx. • Mounting Position: Any • Marking: Type Number
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MBR3030PT
-MBR3060PT
MBR3030PT-MBR3060PT
3060PT
3035PT
3045P
2923 MARKING
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PDF
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Untitled
Abstract: No abstract text available
Text: 1T1G thru 1T7G Taiwan Semiconductor CREAT BY ART Glass Passivated Rectifiers FEATURES - Low forward voltage drop - High current capability - High reliability - High surge current capability - 3mm miniature body - Compliant to RoHS Directive 2011/65/EU and
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2011/65/EU
2002/96/EC
JESD22-B102
D1407004
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PDF
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Untitled
Abstract: No abstract text available
Text: SEMICONDUCTOR 2N7002KE TECHNICAL DATA N Channel MOSFET INTERFACE AND SWITCHING APPLICATION. FEATURES ・ESD Protected 2000V. Human Body Model E B ・High density cell design for low RDS(ON). ・Voltage controlled small signal switch. D H ・High-speed line driver.
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2N7002KE
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MBR3060PTG
Abstract: No abstract text available
Text: SENSITRON MBR3030PT - G -MBR3060PT-G SEMICONDUCTOR Green Products Technical Data Data Sheet 3491, Rev.- MBR3030PT-G-MBR3060PT-G 30A SCHOTTKY BARRIER RECTIFIER Mechanical Data: • Case: Molded Plastic • Polarity: As Marked on Body • Weight: 5.6 grams approx. • Mounting
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MBR3030PT
-MBR3060PT-G
MBR3030PT-G-MBR3060PT-G
MBR3060PTG
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PDF
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Untitled
Abstract: No abstract text available
Text: N-Channel PowerTrench SyncFETTM 25 V, 90 A, 1.5 mΩ Features General Description SyncFETTM Schottky Body Diode This N-Channel SyncFETTM is produced using Fairchild Semiconductor’s advanced PowerTrench® process. Advancements in both silicon and package technologies have
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Untitled
Abstract: No abstract text available
Text: 1T1 thru 1T7 Taiwan Semiconductor CREAT BY ART Silicon Rectifiers FEATURES - Low forward voltage drop - High current capability - High reliability - High surge current capability - 3mm miniature body - Compliant to RoHS Directive 2011/65/EU and in accordance to WEEE 2002/96/EC
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Original
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2011/65/EU
2002/96/EC
JESD22-B102
50mVp-p
D1401031
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PDF
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FDMS2508SDC
Abstract: a2232
Text: N-Channel Dual CoolTM PowerTrench SyncFETTM 25 V, 49 A, 1.95 mΩ Features General Description Dual CoolTM Top Side Cooling PQFN package SyncFET Schottky Body Diode This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench®
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FDMC2512SDC
Abstract: No abstract text available
Text: FDMC2512SDC N-Channel Dual CoolTM PowerTrench SyncFETTM 25 V, 40 A, 2.0 mΩ Features Dual CoolTM General Description Top Side Cooling PQFN package SyncFET Schottky Body Diode This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced
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FDMC2512SDC
FDMC2512SDC
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PDF
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FDMS2502SDC
Abstract: No abstract text available
Text: FDMS2502SDC N-Channel Dual CoolTM PowerTrench SyncFETTM 25 V, 49 A, 1.2 mΩ Features General Description Dual CoolTM Top Side Cooling PQFN package SyncFET Schottky Body Diode This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced
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FDMS2502SDC
FDMS2502SDC
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PDF
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Untitled
Abstract: No abstract text available
Text: N-Channel PowerTrench SyncFETTM 25 V, 60 A, 2.8 mΩ Features General Description SyncFETTM Schottky Body Diode This N-Channel SyncFETTM is produced using Fairchild Semiconductor’s advanced PowerTrench® process. Advancements in both silicon and package technologies have
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Untitled
Abstract: No abstract text available
Text: N-Channel PowerTrench SyncFETTM 25 V, 60 A, 2.8 mΩ Features General Description SyncFETTM Schottky Body Diode This N-Channel SyncFETTM is produced using Fairchild Semiconductor’s advanced PowerTrench® process. Advancements in both silicon and package technologies have
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FDMS8570S
FDMS8570S
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PDF
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MO-240
Abstract: 10dc rectifier
Text: N-Channel PowerTrench SyncFETTM 25 V, 60 A, 2.8 mΩ Features General Description SyncFETTM Schottky Body Diode This N-Channel SyncFETTM is produced using Fairchild Semiconductor’s advanced PowerTrench® process. Advancements in both silicon and package technologies have
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FDMS8570SDC
FDMS8570SDC
MO-240
10dc rectifier
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PDF
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FDMS2506SDC
Abstract: No abstract text available
Text: FDMS2506SDC N-Channel Dual CoolTM PowerTrench SyncFETTM 25 V, 49 A, 1.45 mΩ Features Dual Cool General Description TM Top Side Cooling PQFN package SyncFET Schottky Body Diode This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced
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FDMS2506SDC
FDMS2506SDC
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PDF
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Untitled
Abstract: No abstract text available
Text: FDMS2502SDC N-Channel Dual CoolTM PowerTrench SyncFETTM 25 V, 49 A, 1.2 mΩ Features General Description Dual CoolTM Top Side Cooling PQFN package SyncFET Schottky Body Diode This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced
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FDMS2502SDC
FDMS2502SDC
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PDF
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Untitled
Abstract: No abstract text available
Text: N-Channel PowerTrench SyncFETTM 25 V, 90 A, 1.5 mΩ Features General Description SyncFETTM Schottky Body Diode This N-Channel SyncFETTM is produced using Fairchild Semiconductor’s advanced PowerTrench® process. Advancements in both silicon and package technologies have
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FDMS8558S
FDMS8558S
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PDF
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Untitled
Abstract: No abstract text available
Text: 1T1 thru 1T7 Taiwan Semiconductor CREAT BY ART Silicon Rectifiers FEATURES - Low forward voltage drop - High current capability - High reliability - High surge current capability - 3mm miniature body - Compliant to RoHS Directive 2011/65/EU and in accordance to WEEE 2002/96/EC
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Original
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2011/65/EU
2002/96/EC
JESD22-B102
D1401031
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PDF
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Untitled
Abstract: No abstract text available
Text: FDMS3006SDC N-Channel Dual CoolTM PowerTrench SyncFETTM 30 V, 90 A, 1.9 mΩ Features General Description Dual CoolTM Top Side Cooling PQFN package SyncFET Schottky Body Diode This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced
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FDMS3006SDC
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PDF
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Untitled
Abstract: No abstract text available
Text: N-Channel Dual CoolTM PowerTrench SyncFETTM 25 V, 40 A, 3.5 mΩ Features General Description ̈ Dual CoolTM Top Side Cooling PQFN package ̈ SyncFET Schottky Body Diode This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench®
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MO-240
Abstract: No abstract text available
Text: N-Channel PowerTrench SyncFETTM 25 V, 90 A, 1.5 mΩ Features General Description SyncFETTM Schottky Body Diode This N-Channel SyncFETTM is produced using Fairchild Semiconductor’s advanced PowerTrench® process. Advancements in both silicon and package technologies have
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FDMS8558SDC
FDMS8558SDC
MO-240
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PDF
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Untitled
Abstract: No abstract text available
Text: N-Channel PowerTrench SyncFETTM 25 V, 70 A, 1.8 mΩ Features General Description SyncFETTM Schottky Body Diode This N-Channel SyncFETTM is produced using Fairchild Semiconductor’s advanced PowerTrench® process. Advancements in both silicon and package technologies have
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FDMS8560S
FDMS8560S
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PDF
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