Semiconductor Nuclear Radiation Detector
Abstract: Semiconductor Radiation Detector nuclear nuclear radiation detector NR30 220ohms resistor Radiation Detector c.mac nuclear event detector
Text: LOW POWER NUCLEAR EVENT DETECTOR C-MAC MicroTechnology, in association with MBDA, introduces a low power Nuclear Event Detector NED equipped with the latest materials and technology to mitigate the effect of nuclear weapon outputs. This cutting-edge product detects the event and sets a system
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Untitled
Abstract: No abstract text available
Text: Development of Radiation Detectors Based on Semi-Insulating Silicon Carbide Frank H. Ruddy, Member, IEEE, John G. Seidel, Robert W. Flammang, Ranbir Singh, Member, IEEE, and John Schroeder Abstract–Fast-neutron detectors based on high-purity semiinsulating 4H silicon carbide SiC semiconductor have been
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14-MeV
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Semiconductor Nuclear Radiation Detector
Abstract: fabrication GAMMA Radiation Detector 54AC00 seu Upset 54AC00 54AC245 AN-926 C1995 JM38510 nuclear radiation detector
Text: National Semiconductor Application Note 926 Michael Maher January 1994 INTRODUCTION Today’s rapidly changing global political climate is significantly impacting the military strategies of Free World countries Important decisions are being made regarding each
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20-3A
Semiconductor Nuclear Radiation Detector
fabrication GAMMA Radiation Detector
54AC00 seu
Upset
54AC00
54AC245
AN-926
C1995
JM38510
nuclear radiation detector
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Untitled
Abstract: No abstract text available
Text: UM9441 PIN RADIATION DETECTORS temperature so long as applied voltage exceeds the saturation voltage. This structure also minimizes the effects of permanent damage caused by neutrons and other high energy radiation. Experiments on devices of the UM9441 design show no
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UM9441
UM9441
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UM9441
Abstract: No abstract text available
Text: UM9441 PIN RADIATION DETECTORS KEY FEATURES DESCRIPTION temperature so long as applied voltage exceeds the saturation voltage. This structure also minimizes the effects of permanent damage caused by neutrons and other high energy radiation. Experiments on
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UM9441
UM9441
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Silicon Detector
Abstract: No abstract text available
Text: Si detectors for high energy particles CHAPTER 10 1 Characteristics 1-1 Active area 1-2 Dark current and junction capacitance 1-3 Response speed 2 Si detectors for scintillator coupling 3 Si direct detectors 3-1 3-2 3-3 3-4 3-5 Thickness of depletion layer
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KSPDC0073EA
Silicon Detector
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HSU88
Abstract: DSA003636
Text: HSU88 Silicon Schottky Barrier Diode for Various Detector, Mixer ADE-208-077G Z Rev. 7 Dec. 1999 Features • Low capacitance. (C=0.8pF max) • Low forward voltage. • Ultra small Resin Package (URP) is suitablefor high density surface mounting and high speed assembly.
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HSU88
ADE-208-077G
HSU88
DSA003636
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1SS106
Abstract: hitachi rectifier ADE-208-153A 1SS106 diode HITACHI 1SS106 diode hitachi schottky Hitachi DSA00340
Text: 1SS106 Silicon Schottky Barrier Diode for Various Detector, High Speed Switching ADE-208-153A Z Rev. 1 Oct. 1998 Features • Detection efficiency is very good. • Small temperature coefficient. • High reliability with glass seal. Ordering Information
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1SS106
ADE-208-153A
DO-35
1SS106
hitachi rectifier
ADE-208-153A
1SS106 diode
HITACHI 1SS106
diode hitachi schottky
Hitachi DSA00340
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HSD276A
Abstract: diode hitachi schottky DSA003640
Text: HSD276A Silicon Schottky Barrier Diode for Detector ADE-208-1385 Z Rev.0 Jul. 2001 Features • High forward current, Low capacitance. • Super small Flat Package (SFP) is suitable for surface mount design. Ordering Information Type No. Laser Mark Package Code
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HSD276A
ADE-208-1385
HSD276A
diode hitachi schottky
DSA003640
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Hitachi DSA001653
Abstract: No abstract text available
Text: HSR101 Silicon Schottky Barrier Diode for Various detector, High speed switching ADE-208-080D Z Rev. 4 Sept. 1, 1998 Features • Low forward voltage, High efficiency. • Low reverse current . • Small Resin Package (SRP) is suitable for surface mount design.
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HSR101
ADE-208-080D
Hitachi DSA001653
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HSU88
Abstract: No abstract text available
Text: HSU88 Silicon Schottky Barrier Diode for Various Detector, Mixer ADE-208-077G Z Rev 7 Dec 1999 Features • Low capacitance. (C=0.8pF max) • Low forward voltage. • Ultra small Resin Package (URP) is suitablefor high density surface mounting and high speed assembly.
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HSU88
ADE-208-077G
HSU88
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hitachi rectifier
Abstract: 1SS198 Hitachi DSA00340
Text: 1SS198 Silicon Schottky Barrier Diode for Various Detector, High Speed Switching ADE-208-298A Z Rev. 1 Oct. 1998 Features • Detection efficiency is very good. • Small temperature coefficient. • Small glass package (MHD) enables easy mounting and high reliability.
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1SS198
ADE-208-298A
hitachi rectifier
1SS198
Hitachi DSA00340
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HSC88
Abstract: No abstract text available
Text: HSC88 Silicon Schottky Barrier Diode for Various Detector, Mixer ADE-208-826 Z Rev 0 Nov. 1999 Features • Low capacitance. (C = 0.8pF max) • Low forward voltage. • Ultra small F lat P ackage (UFP) is suitablefor high density surface mounting and high speed assembly.
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HSC88
ADE-208-826
HSC88
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HSM198S
Abstract: DSA003636
Text: HSM198S Silicon Schottky Barrier Diode for Various Detector ADE-208-090C Z Rev. 3 Oct. 2001 Features • Detection efficiency is very good. • Small temperature coefficient. • HSM198S which is interconnected in series configuration is designed for balanced mixer use.
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HSM198S
ADE-208-090C
HSM198S
D-85622
D-85619
DSA003636
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1SS106
Abstract: hitachi rectifier ADE-208-153A HITACHI 1SS106 1SS106 diode ADE-208-153 diode hitachi schottky DSA003640
Text: 1SS106 Silicon Schottky Barrier Diode for Various Detector, High Speed Switching ADE-208-153A Z Rev. 1 Oct. 1998 Features • Detection efficiency is very good. • Small temperature coefficient. • High reliability with glass seal. Ordering Information
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1SS106
ADE-208-153A
DO-35
1SS106
hitachi rectifier
ADE-208-153A
HITACHI 1SS106
1SS106 diode
ADE-208-153
diode hitachi schottky
DSA003640
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1SS286
Abstract: diode hitachi schottky DSA003641
Text: 1SS286 Silicon Schottky Barrier Diode for Various Detector, High Speed Switching ADE-208-302A Z Rev. 1 Sep. 1995 Features • Very low reverse current. • Detection efficiency is very good. • Small glass package (MHD) enables easy mounting and high reliability.
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1SS286
ADE-208-302A
1SS286
diode hitachi schottky
DSA003641
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HSC88
Abstract: Hitachi DSA0047
Text: HSC88 Silicon Schottky Barrier Diode for Various Detector, Mixer ADE-208-826 Z Rev. 0 Nov. 1999 Features • Low capacitance. (C = 0.8pF max) • Low forward voltage. • Ultra small Flat Package (UFP) is suitablefor high density surface mounting and high speed assembly.
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HSC88
ADE-208-826
HSC88
Hitachi DSA0047
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hitachi rectifier
Abstract: 1SS198 diode hitachi schottky DSA003641
Text: 1SS198 Silicon Schottky Barrier Diode for Various Detector, High Speed Switching ADE-208-298A Z Rev. 1 Oct. 1998 Features • Detection efficiency is very good. • Small temperature coefficient. • Small glass package (MHD) enables easy mounting and high reliability.
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1SS198
ADE-208-298A
hitachi rectifier
1SS198
diode hitachi schottky
DSA003641
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HSD88
Abstract: DSA003640
Text: HSD88 Silicon Schottky Barrier Diode for Various Detector, Mixer ADE-208-1386 Z Rev.0 Jun. 2001 Features • Low capacitance. (C = 0.8 pF max) • Low forward voltage. • Super small Flat Package (SFP) is suitable for surface mount design. Ordering Information
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HSD88
ADE-208-1386
HSD88
DSA003640
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hitachi rectifier
Abstract: HSM198S SC-59A Hitachi DSA0044
Text: HSM198S Silicon Schottky Barrier Diode forVarious Detector, High speed switching ADE-208-090B Z Rev. 2 Jun. 1993 Features • • • • Detection efficiency is very good. Small temperature coefficient. HSM198S which is interconnected in series configuration is designed for balanced mixer use.
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HSM198S
ADE-208-090B
HSM198S
hitachi rectifier
SC-59A
Hitachi DSA0044
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Hitachi DSA002774
Abstract: No abstract text available
Text: 1S2076 Silicon Epitaxial Planar Diode for Various Detector, Modulator, Demodulator ADE-208-145A Z Rev. 1 Aug. 1995 Features • Low capacitance. (C = 3.0pF max) • Short reverse recovery time. (trr = 8.0ns max) • High reliability with glass seal. Ordering Information
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1S2076
ADE-208-145A
1S2076
DO-35
17Hitachi
Hitachi DSA002774
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HSK122
Abstract: HSK4148 hitachi label information Hitachi DSA0047
Text: HSK4148 Silicon Epitaxial Planar Diode for Various Detector, Modulator, Demodulator ADE-208-1503 Z Rev.0 Feb. 2002 Features • Low capacitance. (C = 4.0 pF max) • Short reverse recovery time. (trr = 4.0 ns max) • LLD package is suitable for high density surface mounting and high speed assembly.
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HSK4148
ADE-208-1503
D-85622
D-85619
HSK122
HSK4148
hitachi label information
Hitachi DSA0047
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UM9441
Abstract: FX-25
Text: PIN RADIATION DETECTORS Features • • • • • • High Photocurrent Sensitivity High Reliability Construction Fast Rise Time Wide Dynamic Range Hardness to Neutron Bombardment Low Operating Voltage Description Silicon PIN devices are effective detectors
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UM9441
UM9441
U21/2
FX-25
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HSR101
Abstract: LF35 diode hitachi diode hitachi schottky
Text: HSR101 Silicon Schottky Barrier Diode for Various detector, High speed switching HITACHI ADE-208-080D Z Rev. 4 Sept. 1, 1998 Features • Low forward voltage, High efficiency. • Low reverse current. • Small Resin Package (SRP) is suitable for surface mount design.
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ADE-208-080D
HSR101
HSR101
LF35
diode hitachi
diode hitachi schottky
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