semikron automotive inverter
Abstract: Semikron Skai 2 Semikron Skai ac motor controller for electric vehicle circuit diagram design dc link inverter skai 2 automotive inverter dc link capacitor hybrid automobile inverter current sensor Semikron skai mosfet Semikron Skai i 2
Text: SKAI - SEMIKRON Automotive Inverter. Development of a 42V inverter system. Michael Toland, AIPM Program Manager, SEMIKRON USA Peter Beckedahl, Engineering Manager, SEMIKRON USA In January 2000 SEMIKRON Inc. in USA, was awarded a cooperative agreement from
|
Original
|
PDF
|
|
SKCB
Abstract: SKiiP 81 AN 15 T1 SKIIP 81 AC 12 I T1 skcb 2m2-45-3-12 semikron skiip3 SKIIP "2 FOLD" 3m3-45-2-12 IGBT driver IC with PWM output SEMIKRON skiip gb 120 CALCULATION SemiSel
Text: 3. Dezember 2003 Page: 1 von: 26 8VHU 0DQXDO IRU 6.LL3 6\VWHPV Usage of SKiiP Systems SEMIKRON integrated intelligent Power 1 2 3 4 Main Features of SKiiP Systems . 2
|
Original
|
PDF
|
SM/5/FO/000/006/Rev00/25
V031201
SKCB
SKiiP 81 AN 15 T1
SKIIP 81 AC 12 I T1
skcb 2m2-45-3-12
semikron skiip3
SKIIP "2 FOLD"
3m3-45-2-12
IGBT driver IC with PWM output SEMIKRON
skiip gb 120
CALCULATION SemiSel
|
CALCULATION SemiSel 3.1
Abstract: semikron skiip3 DIN 5463 usage of skiip CALCULATION SemiSel skiip gb 120 semikron skiip vf group semikron skiip 81 AN 15 T B DIN 5463 semikron IGBT, 1200V, 600A, H bridge
Text: Usage of SKiiP Systems 10. Dezember 2002 Seite: 1 von: 16 Usage of SKiiP Systems SEMIKRON integrated intelligent Power 1 2 3 4 Main features of SKiiP2 and SKiiP3 Systems . 2
|
Original
|
PDF
|
SM/5/FO/000/006/Rev00/25
V020627
CALCULATION SemiSel 3.1
semikron skiip3
DIN 5463
usage of skiip
CALCULATION SemiSel
skiip gb 120
semikron skiip vf group
semikron skiip 81 AN 15 T
B DIN 5463
semikron IGBT, 1200V, 600A, H bridge
|
SKCB
Abstract: skcb 2m2-45-3-12 3m3-45-2-12 SKiiP 83 AC 12 i t 1 41046220 SKIIP "2 FOLD" SKIIP85 SKIIP DRIVER SKIIP GD semikron skiip 20
Text: Modules – Explanations – SKiiP SKiiP gate driver designator D: gate driver Features DU: gate driver with DC-link voltage measurement and over voltage protection • SKiiP: SEMIKRON integrated intelligent Power is a power semiconductor subsystem • SKiiP integrates power semiconductor switches, heat
|
Original
|
PDF
|
th5000
2m2-45-2-12
2m2-45-3-12
2m2-45-4-12
3m3-45-2-12
3m3-45-3-12
3m3-45-4-12
4m7-40-2-12
4m7-40-3-12
4m7-40-4-12
SKCB
skcb 2m2-45-3-12
3m3-45-2-12
SKiiP 83 AC 12 i t 1
41046220
SKIIP "2 FOLD"
SKIIP85
SKIIP DRIVER
SKIIP GD
semikron skiip 20
|
G240D25
Abstract: GA5-6D25 GA5-4D10 G240D45 G480d50 GA5-4D25 G280D45 G280D25 G480D25 G280D10
Text: Crydom Cross Reference Competitor's Part No. 120A10 Opto22 A1210 120A10SP SPC 120A110SP SPC 120A25 Opto22 A1225 120A25SP SPC 120A45SP SPC 120A80SP SPC 120D10 Opto22 D1210 120D10010SP SPC 120D1010SP SPC 120D10SP SPC 120D110SP SPC 120D25 Opto22 D1225 120D2510SP
|
Original
|
PDF
|
120A10
Opto22
A1210
120A10SP
120A110SP
120A25
A1225
120A25SP
120A45SP
G240D25
GA5-6D25
GA5-4D10
G240D45
G480d50
GA5-4D25
G280D45
G280D25
G480D25
G280D10
|
SKiiP 33 NEC 125 To
Abstract: semikron skiip 33 NEC 125 skiip 33 nec 125 t semikron ASIC SKIC semikron skiip 33 nec Semikron Semitop sk 70 kq 12 skiip 11 nec 06 1 Semikron Semitop sk 45 kq 12 MiniSKiiP 8 semikron skiip 33
Text: MiniSKiiP Technologie Druckkontakte bei allen Leistungs- und Hilfsanschlüssen anstelle von Lötverbindungen. Integration der neuesten Chiptechnologie: • • • • Niedrige Schaltverluste bei 600 V oder 1200 V, homogene NPT IGBTs mit antiparallel geschalteten CAL-Dioden
|
Original
|
PDF
|
|
Untitled
Abstract: No abstract text available
Text: SKiM306GD12E4 Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC Tj = 175 °C 1200 V Ts = 25 °C 410 A Ts = 70 °C 333 A 300 A ICnom ICRM VGES SKiM 63 tpsc Trench IGBT Modules SKiM306GD12E4 Tj ICRM = 3xICnom VCC = 800 V VGE ≤ 15 V VCES ≤ 1200 V
|
Original
|
PDF
|
SKiM306GD12E4
|
SKIM459GD12E4
Abstract: No abstract text available
Text: SKiM459GD12E4 Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC Tj = 175 °C Ts = 25 °C Ts = 70 °C ICnom ICRM ICRM = 3xICnom tpsc Trench IGBT Modules VCC = 800 V VGE 15 V VCES 1200 V V 554 A 450 A 450 A 1350 A -20 . 20 V 10 µs -40 . 175
|
Original
|
PDF
|
SKiM459GD12E4
SKIM459GD12E4
|
Untitled
Abstract: No abstract text available
Text: SKiM406GD066HD Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC Tj = 175 °C Ts = 25 °C Ts = 70 °C ICnom ICRM ICRM = 2xICnom tpsc Trench IGBT Modules VCC = 360 V VGE 15 V VCES 600 V V 468 A 374 A 400 A 800 A -20 . 20 V 6 µs -40 . 175
|
Original
|
PDF
|
SKiM406GD066HD
|
Untitled
Abstract: No abstract text available
Text: SKiM909GD066HD Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC Tj = 175 °C Ts = 25 °C Ts = 70 °C ICnom ICRM ICRM = 2xICnom tpsc Trench IGBT Modules VCC = 360 V VGE 15 V VCES 600 V V 899 A 715 A 900 A 1800 A -20 . 20 V 6 µs -40 . 175
|
Original
|
PDF
|
SKiM909GD066HD
|
semikron automotive inverter
Abstract: semikron skim 93 skim429gd17e4hd SKIM 93
Text: SKiM429GD17E4HD Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC Tj = 175 °C 1700 V Ts = 25 °C 595 A Ts = 70 °C 479 A 420 A ICnom ICRM VGES SKiM 93 tpsc Trench IGBT Modules SKiM429GD17E4HD Tj ICRM = 3xICnom VCC = 1200 V VGE ≤ 15 V
|
Original
|
PDF
|
SKiM429GD17E4HD
SKiM429GD17E4HD
semikron automotive inverter
semikron skim 93
SKIM 93
|
Untitled
Abstract: No abstract text available
Text: SKiM429GD17E4HD Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC Tj = 175 °C Ts = 25 °C Ts = 70 °C ICnom ICRM ICRM = 3xICnom tpsc Trench IGBT Modules VCC = 1200 V VGE 15 V VCES 1700 V V 595 A 479 A 420 A 1260 A -20 . 20 V 10 µs -40 . 175
|
Original
|
PDF
|
SKiM429GD17E4HD
|
SKiiP 33 NEC 125 To
Abstract: skiip 33 ups 063 skiip 32 ups 063 semikron skiip 33 nec skiip 85 UPS 06 skiip 33 nec 125 t semikron skiip 33 NEC 125 semikron skiip 32 ups 063 skiip 32 ups 06 SKIIP 33 UPS 06
Text: MiniSKiiP Technology Pressure contact of all power and auxiliary connections instead of soldered joints. Integration of latest chip technology: • • • • • • Low switching loss 1200 V, homogeneous NPT IGBTs with antiparallel CAL-diodes Low forward loss 600 V PT-IGBTs with antiparallel
|
Original
|
PDF
|
|
Untitled
Abstract: No abstract text available
Text: SKiM459GD12E4 Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC Tj = 175 °C 1200 V Ts = 25 °C 554 A Ts = 70 °C 450 A 450 A ICnom ICRM VGES SKiM 93 tpsc Trench IGBT Modules SKiM459GD12E4 Tj ICRM = 3xICnom VCC = 800 V VGE ≤ 15 V VCES ≤ 1200 V
|
Original
|
PDF
|
SKiM459GD12E4
|
|
SKiM63
Abstract: SKiM306GD12E4
Text: SKiM306GD12E4 Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC Tj = 175 °C 1200 V Ts = 25 °C 410 A Ts = 70 °C 333 A 300 A ICnom ICRM VGES SKiM 63 tpsc Trench IGBT Modules SKiM306GD12E4 Tj ICRM = 3xICnom VCC = 800 V VGE ≤ 15 V VCES ≤ 1200 V
|
Original
|
PDF
|
SKiM306GD12E4
SKiM306GD12E4
SKiM63
|
SKIM45
Abstract: SKiM93
Text: SKiM459GD12E4 Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC Tj = 175 °C 1200 V Ts = 25 °C 554 A Ts = 70 °C 450 A 450 A ICnom ICRM VGES SKiM 93 tpsc Trench IGBT Modules SKiM459GD12E4 Tj ICRM = 3xICnom VCC = 800 V VGE ≤ 15 V VCES ≤ 1200 V
|
Original
|
PDF
|
SKiM459GD12E4
SKiM459GD12E4
SKIM45
SKiM93
|
Untitled
Abstract: No abstract text available
Text: SKiM606GD066HD Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC Tj = 175 °C 600 V Ts = 25 °C 641 A Ts = 70 °C 512 A 600 A ICnom ICRM VGES SKiM 63 tpsc Trench IGBT Modules SKiM606GD066HD Tj ICRM = 2xICnom VCC = 360 V VGE ≤ 15 V VCES ≤ 600 V
|
Original
|
PDF
|
SKiM606GD066HD
|
Untitled
Abstract: No abstract text available
Text: SKiM606GD066HD Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC Tj = 175 °C Ts = 25 °C Ts = 70 °C ICnom ICRM ICRM = 2xICnom tpsc Trench IGBT Modules VCC = 360 V VGE 15 V VCES 600 V V 641 A 512 A 600 A 1200 A -20 . 20 V 6 µs -40 . 175
|
Original
|
PDF
|
SKiM606GD066HD
|
Untitled
Abstract: No abstract text available
Text: SKiM306GD12E4 Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC Tj = 175 °C Ts = 25 °C Ts = 70 °C ICnom ICRM ICRM = 3xICnom tpsc Trench IGBT Modules VCC = 800 V VGE 15 V VCES 1200 V V 410 A 333 A 300 A 900 A -20 . 20 V 10 µs -40 . 175
|
Original
|
PDF
|
SKiM306GD12E4
|
Untitled
Abstract: No abstract text available
Text: SKiM909GD066HD Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC Tj = 175 °C 600 V Ts = 25 °C 899 A Ts = 70 °C 715 A 900 A ICnom ICRM VGES SKiM 93 tpsc Trench IGBT Modules SKiM909GD066HD Tj ICRM = 2xICnom VCC = 360 V VGE ≤ 15 V VCES ≤ 600 V
|
Original
|
PDF
|
SKiM909GD066HD
|
SKiM63
Abstract: SKIM 63
Text: SKiM606GD066HD Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC Tj = 175 °C 600 V Ts = 25 °C 641 A Ts = 70 °C 512 A 600 A ICnom ICRM VGES SKiM 63 tpsc Trench IGBT Modules SKiM606GD066HD Tj ICRM = 2xICnom VCC = 360 V VGE ≤ 15 V VCES ≤ 600 V
|
Original
|
PDF
|
SKiM606GD066HD
SKiM606GD066HD
SKiM63
SKIM 63
|
semikron automotive inverter
Abstract: No abstract text available
Text: SKiM909GD066HD Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC Tj = 175 °C 600 V Ts = 25 °C 899 A Ts = 70 °C 715 A 900 A ICnom ICRM VGES SKiM 93 tpsc Trench IGBT Modules SKiM909GD066HD Tj ICRM = 2xICnom VCC = 360 V VGE ≤ 15 V VCES ≤ 600 V
|
Original
|
PDF
|
SKiM909GD066HD
SKiM909GD066HD
semikron automotive inverter
|
SKiM63
Abstract: No abstract text available
Text: SKiM406GD066HD Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC Tj = 175 °C 600 V Ts = 25 °C 468 A Ts = 70 °C 374 A 400 A ICnom ICRM VGES SKiM 63 tpsc Trench IGBT Modules SKiM406GD066HD Tj ICRM = 2xICnom VCC = 360 V VGE ≤ 15 V VCES ≤ 600 V
|
Original
|
PDF
|
SKiM406GD066HD
SKiM406GD066HD
SKiM63
|
Untitled
Abstract: No abstract text available
Text: SKiM429GD17E4HD Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC Tj = 175 °C 1700 V Ts = 25 °C 595 A Ts = 70 °C 479 A 420 A ICnom ICRM VGES SKiM 93 tpsc Trench IGBT Modules SKiM429GD17E4HD Tj ICRM = 3xICnom VCC = 1200 V VGE ≤ 15 V
|
Original
|
PDF
|
SKiM429GD17E4HD
|