30g 122 igbt
Abstract: SEMIKRON type designation PCIM 176 display CALCULATION SemiSel 3.1 PCIM 176 pure sinus inverter circuit 60749 IGBT cross reference semikron CALCULATION SemiSel PCIM 95
Text: SEMiX - Technical Explanations SEMiX ® IGBT Modules & Bridge Rectifier Family Technical Explanations Version 2.0 / January 2008 Christian Daucher 1 Version 2.0 2008-01-22 by SEMIKRON SEMiX® - Technical Explanations Content 1 Introduction . 3
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PCIM 176
Abstract: PCIM 95 CALCULATION SemiSel 30g 122 igbt PCIM 176 display IGBT rectifier theory IGBT cross reference semikron pure sinus inverter circuit makrolon 9425 T100
Text: SEMiX - Technical Explanations SEMiX ® IGBT Modules & Bridge Rectifier Family Technical Explanations Version 2.0 / January 2008 Christian Daucher 1 Version 2.0 2008-01-22 by SEMIKRON SEMiX® - Technical Explanations Content 1 Introduction . 3
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B43875
Abstract: 20/j1nac3 semikron SKS SKHI 20 SKHI 20 opa semikron SKD 75 gal CAPACITOR B43875 j1nac3 B6CI 16 V12 LA 125
Text: SEMISTACK - IGBT Circuit B6CI Symbol Irms max Tamb = 35 °C SEMIX Stack 1 Three-phase inverter SKS 100F B6U+B6CI+E1CIF 80 V12 SEMiX 352 GB 128 SEMiX 302 GAL 126 SKD 145/16 P122 / 550 Vcemax fswmax fSWmaxCsl C Ceqvl Tds% VDCmax Rectifier Vnetmax Tvj Tstg Tamb
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10min
B43875
A9478
20/j1nac3
semikron SKS
SKHI 20
SKHI 20 opa
semikron SKD 75 gal
CAPACITOR B43875
j1nac3
B6CI 16 V12
LA 125
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KG3B-35-5
Abstract: semix igbt GAL semix type Designation System KG3B semix igbt modules bridge MKT .01 R 46 MKP SEMIKRON type designation wacker KG3B-35
Text: Modules – Explanations – SEMiX SEMiX IGBT Modules Forward characteristic with minimised temperature coefficient • Features • New module platform for optimum connection between driver and intermediate circuit • Based on well-tried SEMIKRON module technologies
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17-mm-high,
KG3B-35-5
semix igbt GAL
semix type Designation System
KG3B
semix igbt modules bridge
MKT .01
R 46 MKP
SEMIKRON type designation
wacker
KG3B-35
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Untitled
Abstract: No abstract text available
Text: SEMiX 603GB066HDs power semiconductor power electronics igbt bridge rectifier diode thyristor cib rectifier ipm driver inverter converter thyristor module gleichrichter Absolute Maximum Ratings Symbol Conditions IGBT - ' $ - &:( ) $#! '()6
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603GB066HDs
603GB066HDs
603GAL126HDs
603GAR126HDs
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Untitled
Abstract: No abstract text available
Text: SEMiX 402GB066HDs power semiconductor power electronics igbt bridge rectifier diode thyristor cib rectifier ipm driver inverter converter thyristor module gleichrichter Absolute Maximum Ratings Symbol Conditions IGBT - ' $ - &5( ) $#! '()2
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402GB066HDs
402GB066HDs
402GAL066HDs
402GAR066HDs
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Untitled
Abstract: No abstract text available
Text: SEMiX 352GB128Ds power semiconductor power electronics igbt bridge rectifier diode thyristor cib rectifier ipm driver inverter converter thyristor module gleichrichter Absolute Maximum Ratings Symbol Conditions IGBT . '+ , 1 . 0+ , 167 '+,-
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352GB128Ds
352GB128Ds
352GAL128Ds
352GAR128Ds
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Untitled
Abstract: No abstract text available
Text: SEMiX 703GB126HDs power semiconductor power electronics igbt bridge rectifier diode thyristor cib rectifier ipm driver inverter converter thyristor module gleichrichter Absolute Maximum Ratings Symbol Conditions IGBT . * 1 . ')0 * 167 ()*-
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703GB126HDs
703GAL126HDs
703GAR126HDs
703GB126HDs
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Untitled
Abstract: No abstract text available
Text: SEMiX 452GB126HDs power semiconductor power electronics igbt bridge rectifier diode thyristor cib rectifier ipm driver inverter converter thyristor module gleichrichter Absolute Maximum Ratings Symbol Conditions IGBT . * 1 . ')0 * 167 ()*-
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452GB126HDs
452GB126HDs
452GAL126HDs
452GAR126HDs
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Untitled
Abstract: No abstract text available
Text: SEMiX 553GB128Ds power semiconductor power electronics igbt bridge rectifier diode thyristor cib rectifier ipm driver inverter converter thyristor module gleichrichter Absolute Maximum Ratings Symbol Conditions IGBT . '+ , 1 . 0+ , 156 '+,-
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553GB128Ds
553GB128Ds
553GAL128Ds
553GAR128Ds
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SEMiX453GAL12E4s
Abstract: No abstract text available
Text: SEMiX453GAL12E4s Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC Tj = 25 °C Tj = 175 °C 1200 V Tc = 25 °C 683 A Tc = 80 °C 526 A 450 A ICnom ICRM SEMiX 3s Trench IGBT Modules SEMiX453GAL12E4s VGES tpsc Tj ICRM = 3xICnom VCC = 800 V
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SEMiX453GAL12E4s
SEMiX453GAL12E4s
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diode B05
Abstract: 4a8 diode diode e4e
Text: SEMiX 653GB176HDs power semiconductor power electronics igbt bridge rectifier diode thyristor cib rectifier ipm driver inverter converter thyristor module gleichrichter -. /0 # Absolute Maximum Ratings Symbol Conditions IGBT
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653GB176HDs
653GB176HDs
653GAL176HDs
653GAR176HDs
diode B05
4a8 diode
diode e4e
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SEMiX604GAL12E4S
Abstract: C529A SEMIX604GA
Text: SEMiX604GAL12E4s Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC Tj = 175 °C 1200 V Tc = 25 °C 916 A Tc = 80 °C 704 A 600 A ICnom ICRM SEMiX 4s Trench IGBT Modules SEMiX604GAL12E4s VGES tpsc Tj ICRM = 3xICnom VCC = 800 V VGE ≤ 20 V
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SEMiX604GAL12E4s
E63532
SEMiX604GAL12E4S
C529A
SEMIX604GA
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Untitled
Abstract: No abstract text available
Text: SEMiX703GAL126HDs Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC Tj = 25 °C Tj = 150 °C 1200 V Tc = 25 °C 642 A Tc = 80 °C 449 A 450 A ICnom ICRM SEMiX 3s Trench IGBT Modules SEMiX703GAL126HDs VGES tpsc Tj ICRM = 2xICnom VCC = 600 V
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SEMiX703GAL126HDs
E63532
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Untitled
Abstract: No abstract text available
Text: SEMiX703GAL126HDs Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC Tj = 25 °C Tj = 150 °C 1200 V Tc = 25 °C 642 A Tc = 80 °C 449 A 450 A ICnom ICRM SEMiX 3s Trench IGBT Modules SEMiX703GAL126HDs VGES tpsc Tj ICRM = 2xICnom VCC = 600 V
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SEMiX703GAL126HDs
SEMiX703GAL126HDs
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Untitled
Abstract: No abstract text available
Text: SEMiX302GAL12E4s Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC Tj = 25 °C Tj = 175 °C 1200 V Tc = 25 °C 463 A Tc = 80 °C 356 A 300 A ICnom ICRM SEMiX 2s Trench IGBT Modules SEMiX302GAL12E4s VGES tpsc Tj ICRM = 3xICnom VCC = 800 V
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SEMiX302GAL12E4s
E63532
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Untitled
Abstract: No abstract text available
Text: SEMiX151GAL12E4s Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC Tj = 25 °C Tj = 175 °C 1200 V Tc = 25 °C 232 A Tc = 80 °C 179 A 150 A ICnom ICRM SEMiX 1s Trench IGBT Modules SEMiX151GAL12E4s VGES tpsc Tj ICRM = 3xICnom VCC = 800 V
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SEMiX151GAL12E4s
E63532
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Untitled
Abstract: No abstract text available
Text: SEMiX452GAL126HDs Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC Tj = 25 °C Tj = 150 °C 1200 V Tc = 25 °C 455 A Tc = 80 °C 319 A 300 A ICnom ICRM SEMiX 2s Trench IGBT Modules SEMiX452GAL126HDs VGES tpsc Tj ICRM = 2xICnom VCC = 600 V
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SEMiX452GAL126HDs
E63532
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VF-0240
Abstract: No abstract text available
Text: SEMiX352GAL128Ds Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC Tj = 150 °C 1200 V Tc = 25 °C 377 A Tc = 80 °C 268 A 200 A ICnom ICRM SEMiX 2s SPT IGBT Modules SEMiX352GAL128Ds VGES tpsc Tj ICRM = 2xICnom VCC = 600 V VGE ≤ 20 V
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SEMiX352GAL128Ds
E63532
VF-0240
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SEMIX402GAL
Abstract: No abstract text available
Text: SEMiX402GAL066HDs Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC Tj = 25 °C Tj = 175 °C 600 V Tc = 25 °C 502 A Tc = 80 °C 379 A 400 A ICnom ICRM SEMiX 2s Trench IGBT Modules SEMiX402GAL066HDs VGES tpsc Tj ICRM = 2xICnom VCC = 360 V
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SEMiX402GAL066HDs
SEMiX402GAL066HDs
SEMIX402GAL
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Untitled
Abstract: No abstract text available
Text: SEMiX653GAL176HDs Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC Tj = 25 °C Tj = 150 °C 1700 V Tc = 25 °C 619 A Tc = 80 °C 438 A 450 A ICnom ICRM SEMiX 3s Trench IGBT Modules SEMiX653GAL176HDs VGES tpsc Tj ICRM = 2xICnom VCC = 1000 V
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SEMiX653GAL176HDs
SEMiX653GAL176HDs
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igbt
Abstract: No abstract text available
Text: SEMiX302GAL12E4s Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC Tj = 25 °C Tj = 175 °C 1200 V Tc = 25 °C 463 A Tc = 80 °C 356 A 300 A ICnom ICRM SEMiX 2s Trench IGBT Modules SEMiX302GAL12E4s VGES tpsc Tj ICRM = 3xICnom VCC = 800 V
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SEMiX302GAL12E4s
SEMiX302GAL12E4s
igbt
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Untitled
Abstract: No abstract text available
Text: SEMiX151GAL12E4s Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC Tj = 25 °C Tj = 175 °C 1200 V Tc = 25 °C 232 A Tc = 80 °C 179 A 150 A ICnom ICRM SEMiX 1s Trench IGBT Modules SEMiX151GAL12E4s VGES tpsc Tj ICRM = 3xICnom VCC = 800 V
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SEMiX151GAL12E4s
SEMiX151GAL12E4s
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Untitled
Abstract: No abstract text available
Text: SEMiX453GAL12E4s Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC Tj = 175 °C 1200 V Tc = 25 °C 683 A Tc = 80 °C 526 A 450 A ICnom ICRM SEMiX 3s Trench IGBT Modules ICRM = 3xICnom 1350 A -20 . 20 V 10 µs -40 . 175 °C Tc = 25 °C
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SEMiX453GAL12E4s
E63532
Ap453GAL12E4s
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