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    SEMIX302GB126HD Search Results

    SEMIX302GB126HD Datasheets (3)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    SEMiX302GB126HD Semikron Trench IGBT Modules Original PDF
    SEMIX302GB126HD Semikron Trench IGBT Modules Original PDF
    SEMiX302GB126HDs Semikron Trench IGBT Modules Original PDF

    SEMIX302GB126HD Datasheets Context Search

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    Untitled

    Abstract: No abstract text available
    Text: SEMiX302GB126HDs Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC Tj = 25 °C Tj = 150 °C 1200 V Tc = 25 °C 311 A Tc = 80 °C 218 A 200 A ICnom ICRM SEMiX 2s Trench IGBT Modules ICRM = 2xICnom 400 A -20 . 20 V 10 µs -40 . 150 °C


    Original
    PDF SEMiX302GB126HDs E63532

    Untitled

    Abstract: No abstract text available
    Text: SEMiX302GB126HDs Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC Tj = 150 °C 1200 V Tc = 25 °C 311 A Tc = 80 °C 218 A 200 A ICnom ICRM SEMiX 2s tpsc Trench IGBT Modules ICRM = 2xICnom 400 A -20 . 20 V 10 µs -40 . 150 °C Tc = 25 °C


    Original
    PDF SEMiX302GB126HDs E6353SEMiX302GB126HDs

    Untitled

    Abstract: No abstract text available
    Text: SEMiX302GB126HDs Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC Tj = 25 °C Tj = 150 °C 1200 V Tc = 25 °C 311 A Tc = 80 °C 218 A 200 A ICnom ICRM SEMiX 2s Trench IGBT Modules SEMiX302GB126HDs VGES tpsc Tj ICRM = 2xICnom VCC = 600 V


    Original
    PDF SEMiX302GB126HDs E63532

    Untitled

    Abstract: No abstract text available
    Text: SEMiX302GB126HDs Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC Tj = 25 °C Tj = 150 °C 1200 V Tc = 25 °C 311 A Tc = 80 °C 218 A 200 A ICnom ICRM SEMiX 2s Trench IGBT Modules SEMiX302GB126HDs VGES tpsc Tj ICRM = 2xICnom VCC = 600 V


    Original
    PDF SEMiX302GB126HDs SEMiX302GB126HDs E63532

    DIODE 35

    Abstract: No abstract text available
    Text: SEMiX302GB126HDs Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC Tj = 150 °C 1200 V Tc = 25 °C 311 A Tc = 80 °C 218 A 200 A ICnom ICRM SEMiX 2s Trench IGBT Modules ICRM = 2xICnom 400 A -20 . 20 V 10 µs -40 . 150 °C Tc = 25 °C


    Original
    PDF SEMiX302GB126HDs E63532 DIODE 35

    Untitled

    Abstract: No abstract text available
    Text: SEMiX302GB126HDs Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC ICRM Tj = 150°C 1200 V Tc = 25°C 311 A Tc = 80°C 218 A 400 A -20 . 20 V 10 µs -40 . 150 °C Tc = 25°C 292 A Tc = 80°C 202 A ICRM = 2xICnom VGES SEMiX 2s Trench IGBT Modules


    Original
    PDF SEMiX302GB126HDs

    SEMIX353GB126V1

    Abstract: SEMIX703GB126V1 semix503gb126v1 SEMiX653GD176v1 SEMIX252GB126V1 SEMiX241MD008s SEMIX302GB126V1 semix503gb126v SEMIX353GB126HDS SEMiX353GD176v1
    Text: Product Change Notification product group: SEMiX no.: 09-039 Change of SEMiX housing subject of change: change of SEMiX housing, namely form of nuts at the main terminals, housing material, one-piece housing, mounting domes for driver assembly and spring slots


    Original
    PDF SK645FR substit43/09 JESD46 1005/Rev SEMIX353GB126V1 SEMIX703GB126V1 semix503gb126v1 SEMiX653GD176v1 SEMIX252GB126V1 SEMiX241MD008s SEMIX302GB126V1 semix503gb126v SEMIX353GB126HDS SEMiX353GD176v1