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SEMIX452GAL126HDS Price and Stock

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SEMIKRON SEMIX452GAL126HDS Igbt Module, Single, 1.2Kv, 455A; Continuous Collector Current:455A; Collector Emitter Saturation Voltage:1.7V; Power Dissipation:-; Operating Temperature Max:125°C; Igbt Termination:Stud; Collector Emitter Voltage Max:1.2Kv Rohs Compliant: Yes \|Semikron SEMIX452GAL126HDS
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Newark	SEMIX452GAL126HDS	Bulk			6	1 - 10 $137.19 100 $125.43 1000 $125.43 10000 $125.43	Buy Now
SEMIKRON SEMIX452GAL126HDS 27890685 Module: IGBT; diode/transistor; boost chopper,thermistor; screw
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
TME	SEMIX452GAL126HDS 27890685				1	1 $416.59 10 $328.39 100 $295.44 1000 $295.44 10000 $295.44	Get Quote

SEMIX452GAL126HDS Datasheets (1)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
SEMiX452GAL126HDs		Semikron	Trench IGBT Modules		Original	PDF

SEMIX452GAL126HDS Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
Untitled Abstract: No abstract text available Text: SEMiX452GAL126HDs Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC Tj = 150 °C 1200 V Tc = 25 °C 455 A Tc = 80 °C 319 A 300 A ICnom ICRM SEMiX 2s tpsc Trench IGBT Modules ICRM = 2xICnom 600 A -20 . 20 V 10 µs -40 . 150 °C Tc = 25 °C	Original	PDF	SEMiX452GAL126HDs E63iX452GAL126HDs
Untitled Abstract: No abstract text available Text: SEMiX452GAL126HDs Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC Tj = 25 °C Tj = 150 °C 1200 V Tc = 25 °C 455 A Tc = 80 °C 319 A 300 A ICnom ICRM SEMiX 2s Trench IGBT Modules ICRM = 2xICnom 600 A -20 . 20 V 10 µs -40 . 150 °C	Original	PDF	SEMiX452GAL126HDs E63532
Untitled Abstract: No abstract text available Text: SEMiX452GAL126HDs Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC Tj = 25 °C Tj = 150 °C 1200 V Tc = 25 °C 455 A Tc = 80 °C 319 A 300 A ICnom ICRM SEMiX 2s Trench IGBT Modules SEMiX452GAL126HDs VGES tpsc Tj ICRM = 2xICnom VCC = 600 V	Original	PDF	SEMiX452GAL126HDs E63532
discharge diode Abstract: No abstract text available Text: SEMiX452GAL126HDs Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC Tj = 150 °C 1200 V Tc = 25 °C 455 A Tc = 80 °C 319 A 300 A ICnom ICRM SEMiX 2s Trench IGBT Modules ICRM = 2xICnom 600 A -20 . 20 V 10 µs -40 . 150 °C Tc = 25 °C	Original	PDF	SEMiX452GAL126HDs E63532 discharge diode
Untitled Abstract: No abstract text available Text: SEMiX452GAL126HDs Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC Tj = 25 °C Tj = 150 °C 1200 V Tc = 25 °C 455 A Tc = 80 °C 319 A 300 A ICnom ICRM SEMiX 2s Trench IGBT Modules SEMiX452GAL126HDs VGES tpsc Tj ICRM = 2xICnom VCC = 600 V	Original	PDF	SEMiX452GAL126HDs SEMiX452GAL126HDs
Untitled Abstract: No abstract text available Text: SEMiX452GAL126HDs Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC ICRM Tj = 150°C 1200 V Tc = 25°C 455 A Tc = 80°C 319 A 600 A -20 . 20 V 10 µs -40 . 150 °C Tc = 25°C 394 A Tc = 80°C 272 A ICRM = 2xICnom VGES SEMiX 2s Trench IGBT Modules	Original	PDF	SEMiX452GAL126HDs
SEMIX353GB126V1 Abstract: SEMIX703GB126V1 semix503gb126v1 SEMiX653GD176v1 SEMIX252GB126V1 SEMiX241MD008s SEMIX302GB126V1 semix503gb126v SEMIX353GB126HDS SEMiX353GD176v1 Text: Product Change Notification product group: SEMiX no.: 09-039 Change of SEMiX housing subject of change: change of SEMiX housing, namely form of nuts at the main terminals, housing material, one-piece housing, mounting domes for driver assembly and spring slots	Original	PDF	SK645FR substit43/09 JESD46 1005/Rev SEMIX353GB126V1 SEMIX703GB126V1 semix503gb126v1 SEMiX653GD176v1 SEMIX252GB126V1 SEMiX241MD008s SEMIX302GB126V1 semix503gb126v SEMIX353GB126HDS SEMiX353GD176v1