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    SEMIKRON SEMIX 503GB126HD

    Igbt Module, 1.2Kv, 480A, Semix 3; Continuous Collector Current:490A; Collector Emitter Saturation Voltage:2.15V; Power Dissipation:-; Operating Temperature Max:150°C; Igbt Termination:Stud; Collector Emitter Voltage Max:1.2Kv Rohs Compliant: Yes |Semikron SEMIX 503GB126HD
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    SEMIX503GB1 Datasheets (5)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    SEMiX503GB126HD Semikron Trench IGBT Modules Original PDF
    SEMIX503GB126HD Semikron Trench IGBT Modules Original PDF
    SEMIX503GB126HDS Semikron IGBT Power Module Original PDF
    SEMiX503GB126HDS Semikron Trench IGBT Modules Original PDF
    SEMIX503GB126HDS Semikron Trench IGBT Modules Original PDF

    SEMIX503GB1 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: SEMiX503GB126HDs Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC Tj = 150 °C 1200 V Tc = 25 °C 466 A Tc = 80 °C 327 A 300 A ICnom ICRM SEMiX 3s Trench IGBT Modules SEMiX503GB126HDs VGES tpsc Tj ICRM = 2xICnom VCC = 600 V VGE ≤ 20 V


    Original     		PDF SEMiX503GB126HDs SEMiX503GB126HDs E63532 Inv11:

    SEMIX503GB

    Abstract: No abstract text available
    Text: SEMiX503GB126HDs Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC ICRM Tj = 150°C 1200 V Tc = 25°C 466 A Tc = 80°C 327 A 600 A -20 . 20 V 10 µs -40 . 150 °C Tc = 25°C 431 A Tc = 80°C 298 A ICRM = 2xICnom VGES SEMiX 3s Trench IGBT Modules


    Original     		PDF SEMiX503GB126HDs SEMIX503GB

    Untitled

    Abstract: No abstract text available
    Text: SEMiX503GB126HDs Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC Tj = 150 °C 1200 V Tc = 25 °C 466 A Tc = 80 °C 327 A 300 A ICnom ICRM SEMiX 3s Trench IGBT Modules ICRM = 2xICnom 600 A -20 . 20 V 10 µs -40 . 150 °C Tc = 25 °C


    Original     		PDF SEMiX503GB126HDs E63532

    Untitled

    Abstract: No abstract text available
    Text: SEMiX503GB126HDs Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC Tj = 25 °C Tj = 150 °C 1200 V Tc = 25 °C 466 A Tc = 80 °C 327 A 300 A ICnom ICRM SEMiX 3s Trench IGBT Modules ICRM = 2xICnom 600 A -20 . 20 V 10 µs -40 . 150 °C


    Original     		PDF SEMiX503GB126HDs E63532

    C431A

    Abstract: C327A
    Text: SEMiX503GB126HDs Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC Tj = 150 °C 1200 V Tc = 25 °C 466 A Tc = 80 °C 327 A 300 A ICnom ICRM SEMiX 3s Trench IGBT Modules ICRM = 2xICnom 600 A -20 . 20 V 10 µs -40 . 150 °C Tc = 25 °C


    Original     		PDF SEMiX503GB126HDs E63532 C431A C327A

    Untitled

    Abstract: No abstract text available
    Text: SEMiX503GB126HDs Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC Tj = 25 °C Tj = 150 °C 1200 V Tc = 25 °C 466 A Tc = 80 °C 327 A 300 A ICnom ICRM SEMiX 3s Trench IGBT Modules SEMiX503GB126HDs VGES tpsc Tj ICRM = 2xICnom VCC = 600 V


    Original     		PDF SEMiX503GB126HDs E63532

    Untitled

    Abstract: No abstract text available
    Text: SEMiX503GB126HDs Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC Tj = 25 °C Tj = 150 °C 1200 V Tc = 25 °C 466 A Tc = 80 °C 327 A 300 A ICnom ICRM SEMiX 3s Trench IGBT Modules SEMiX503GB126HDs VGES tpsc Tj ICRM = 2xICnom VCC = 600 V


    Original     		PDF SEMiX503GB126HDs SEMiX503GB126HDs E63532

    UPS sinus circuit

    Abstract: sine wave ups design SEMiX503GB126HDS 80C327
    Text: SEMiX503GB126HDs Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC ICRM Tj = 150°C 1200 V Tc = 25°C 466 A Tc = 80°C 327 A 600 A -20 . 20 V 10 µs -40 . 150 °C Tc = 25°C 431 A Tc = 80°C 298 A ICRM = 2xICnom VGES SEMiX 3s Trench IGBT Modules


    Original     		PDF SEMiX503GB126HDs B100/125 R100exp B100/125 1/T-1/T100) UPS sinus circuit sine wave ups design SEMiX503GB126HDS 80C327

    30g 122 igbt

    Abstract: SEMIKRON type designation PCIM 176 display CALCULATION SemiSel 3.1 PCIM 176 pure sinus inverter circuit 60749 IGBT cross reference semikron CALCULATION SemiSel PCIM 95
    Text: SEMiX - Technical Explanations SEMiX ® IGBT Modules & Bridge Rectifier Family Technical Explanations Version 2.0 / January 2008 Christian Daucher 1 Version 2.0 2008-01-22 by SEMIKRON SEMiX® - Technical Explanations Content 1 Introduction . 3


    Original     		PDF

    SEMIX353GB126V1

    Abstract: SEMIX703GB126V1 semix503gb126v1 SEMiX653GD176v1 SEMIX252GB126V1 SEMiX241MD008s SEMIX302GB126V1 semix503gb126v SEMIX353GB126HDS SEMiX353GD176v1
    Text: Product Change Notification product group: SEMiX no.: 09-039 Change of SEMiX housing subject of change: change of SEMiX housing, namely form of nuts at the main terminals, housing material, one-piece housing, mounting domes for driver assembly and spring slots


    Original     		PDF SK645FR substit43/09 JESD46 1005/Rev SEMIX353GB126V1 SEMIX703GB126V1 semix503gb126v1 SEMiX653GD176v1 SEMIX252GB126V1 SEMiX241MD008s SEMIX302GB126V1 semix503gb126v SEMIX353GB126HDS SEMiX353GD176v1

    PCIM 176

    Abstract: PCIM 95 CALCULATION SemiSel 30g 122 igbt PCIM 176 display IGBT rectifier theory IGBT cross reference semikron pure sinus inverter circuit makrolon 9425 T100
    Text: SEMiX - Technical Explanations SEMiX ® IGBT Modules & Bridge Rectifier Family Technical Explanations Version 2.0 / January 2008 Christian Daucher 1 Version 2.0 2008-01-22 by SEMIKRON SEMiX® - Technical Explanations Content 1 Introduction . 3


    Original     		PDF