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SEMIKRON SEMIX 503GB126HD Igbt Module, 1.2Kv, 480A, Semix 3; Continuous Collector Current:490A; Collector Emitter Saturation Voltage:2.15V; Power Dissipation:-; Operating Temperature Max:150°C; Igbt Termination:Stud; Collector Emitter Voltage Max:1.2Kv Rohs Compliant: Yes \|Semikron SEMIX 503GB126HD
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Newark	SEMIX 503GB126HD	Bulk			6	1 - 10 - 100 - 1000 - 10000 -	Buy Now

SEMIX503GB126HD Datasheets (5)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
SEMiX503GB126HD		Semikron	Trench IGBT Modules		Original	PDF
SEMIX503GB126HD		Semikron	Trench IGBT Modules		Original	PDF
SEMIX503GB126HDS		Semikron	IGBT Power Module		Original	PDF
SEMiX503GB126HDS		Semikron	Trench IGBT Modules		Original	PDF
SEMIX503GB126HDS		Semikron	Trench IGBT Modules		Original	PDF

SEMIX503GB126HD Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
Untitled Abstract: No abstract text available Text: SEMiX503GB126HDs Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC Tj = 150 °C 1200 V Tc = 25 °C 466 A Tc = 80 °C 327 A 300 A ICnom ICRM SEMiX 3s Trench IGBT Modules SEMiX503GB126HDs VGES tpsc Tj ICRM = 2xICnom VCC = 600 V VGE ≤ 20 V	Original	SEMiX503GB126HDs SEMiX503GB126HDs E63532 Inv11:	PDF
SEMIX503GB Abstract: No abstract text available Text: SEMiX503GB126HDs Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC ICRM Tj = 150°C 1200 V Tc = 25°C 466 A Tc = 80°C 327 A 600 A -20 . 20 V 10 µs -40 . 150 °C Tc = 25°C 431 A Tc = 80°C 298 A ICRM = 2xICnom VGES SEMiX 3s Trench IGBT Modules	Original	SEMiX503GB126HDs SEMIX503GB	PDF
Untitled Abstract: No abstract text available Text: SEMiX503GB126HDs Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC Tj = 150 °C 1200 V Tc = 25 °C 466 A Tc = 80 °C 327 A 300 A ICnom ICRM SEMiX 3s Trench IGBT Modules ICRM = 2xICnom 600 A -20 . 20 V 10 µs -40 . 150 °C Tc = 25 °C	Original	SEMiX503GB126HDs E63532	PDF
Untitled Abstract: No abstract text available Text: SEMiX503GB126HDs Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC Tj = 25 °C Tj = 150 °C 1200 V Tc = 25 °C 466 A Tc = 80 °C 327 A 300 A ICnom ICRM SEMiX 3s Trench IGBT Modules ICRM = 2xICnom 600 A -20 . 20 V 10 µs -40 . 150 °C	Original	SEMiX503GB126HDs E63532	PDF
C431A Abstract: C327A Text: SEMiX503GB126HDs Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC Tj = 150 °C 1200 V Tc = 25 °C 466 A Tc = 80 °C 327 A 300 A ICnom ICRM SEMiX 3s Trench IGBT Modules ICRM = 2xICnom 600 A -20 . 20 V 10 µs -40 . 150 °C Tc = 25 °C	Original	SEMiX503GB126HDs E63532 C431A C327A	PDF
Untitled Abstract: No abstract text available Text: SEMiX503GB126HDs Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC Tj = 25 °C Tj = 150 °C 1200 V Tc = 25 °C 466 A Tc = 80 °C 327 A 300 A ICnom ICRM SEMiX 3s Trench IGBT Modules SEMiX503GB126HDs VGES tpsc Tj ICRM = 2xICnom VCC = 600 V	Original	SEMiX503GB126HDs E63532	PDF
Untitled Abstract: No abstract text available Text: SEMiX503GB126HDs Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC Tj = 25 °C Tj = 150 °C 1200 V Tc = 25 °C 466 A Tc = 80 °C 327 A 300 A ICnom ICRM SEMiX 3s Trench IGBT Modules SEMiX503GB126HDs VGES tpsc Tj ICRM = 2xICnom VCC = 600 V	Original	SEMiX503GB126HDs SEMiX503GB126HDs E63532	PDF
UPS sinus circuit Abstract: sine wave ups design SEMiX503GB126HDS 80C327 Text: SEMiX503GB126HDs Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC ICRM Tj = 150°C 1200 V Tc = 25°C 466 A Tc = 80°C 327 A 600 A -20 . 20 V 10 µs -40 . 150 °C Tc = 25°C 431 A Tc = 80°C 298 A ICRM = 2xICnom VGES SEMiX 3s Trench IGBT Modules	Original	SEMiX503GB126HDs B100/125 R100exp B100/125 1/T-1/T100) UPS sinus circuit sine wave ups design SEMiX503GB126HDS 80C327	PDF
30g 122 igbt Abstract: SEMIKRON type designation PCIM 176 display CALCULATION SemiSel 3.1 PCIM 176 pure sinus inverter circuit 60749 IGBT cross reference semikron CALCULATION SemiSel PCIM 95 Text: SEMiX - Technical Explanations SEMiX ® IGBT Modules & Bridge Rectifier Family Technical Explanations Version 2.0 / January 2008 Christian Daucher 1 Version 2.0 2008-01-22 by SEMIKRON SEMiX® - Technical Explanations Content 1 Introduction . 3	Original		PDF
SEMIX353GB126V1 Abstract: SEMIX703GB126V1 semix503gb126v1 SEMiX653GD176v1 SEMIX252GB126V1 SEMiX241MD008s SEMIX302GB126V1 semix503gb126v SEMIX353GB126HDS SEMiX353GD176v1 Text: Product Change Notification product group: SEMiX no.: 09-039 Change of SEMiX housing subject of change: change of SEMiX housing, namely form of nuts at the main terminals, housing material, one-piece housing, mounting domes for driver assembly and spring slots	Original	SK645FR substit43/09 JESD46 1005/Rev SEMIX353GB126V1 SEMIX703GB126V1 semix503gb126v1 SEMiX653GD176v1 SEMIX252GB126V1 SEMiX241MD008s SEMIX302GB126V1 semix503gb126v SEMIX353GB126HDS SEMiX353GD176v1	PDF
PCIM 176 Abstract: PCIM 95 CALCULATION SemiSel 30g 122 igbt PCIM 176 display IGBT rectifier theory IGBT cross reference semikron pure sinus inverter circuit makrolon 9425 T100 Text: SEMiX - Technical Explanations SEMiX ® IGBT Modules & Bridge Rectifier Family Technical Explanations Version 2.0 / January 2008 Christian Daucher 1 Version 2.0 2008-01-22 by SEMIKRON SEMiX® - Technical Explanations Content 1 Introduction . 3	Original		PDF