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    SEMIX653GB176HDS Price and Stock

    SEMIKRON SEMIX653GB176HDS

    Igbt Power Module; Continuous Collector Current:619A; Collector Emitter Saturation Voltage:2.45V; Power Dissipation:-; Operating Temperature Max:150°C; Igbt Termination:Stud; Collector Emitter Voltage Max:1.2V; Product Range:- Rohs Compliant: Yes |Semikron SEMIX653GB176HDS
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Newark SEMIX653GB176HDS Bulk 6
    • 1 -
    • 10 $334.44
    • 100 $315.19
    • 1000 $315.19
    • 10000 $315.19
    		Buy Now

    SEMIKRON SEMIX653GB176HDS 27890450

    Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 450A
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    TME SEMIX653GB176HDS 27890450 1
    • 1 $1047.4
    • 10 $827.01
    • 100 $744.09
    • 1000 $744.09
    • 10000 $744.09
    		Get Quote

    SEMIX653GB176HDS Datasheets (2)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    SEMIX653GB176HDS Semikron Trench IGBT Modules Original PDF
    SEMiX653GB176HDS Semikron Trench IGBT Modules Original PDF

    SEMIX653GB176HDS Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: SEMiX653GB176HDs Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC Tj = 25 °C Tj = 150 °C 1700 V Tc = 25 °C 619 A Tc = 80 °C 438 A 450 A ICnom ICRM SEMiX 3s Trench IGBT Modules SEMiX653GB176HDs VGES tpsc Tj ICRM = 2xICnom VCC = 1000 V


    Original     		PDF SEMiX653GB176HDs SEMiX653GB176HDs E63532

    Untitled

    Abstract: No abstract text available
    Text: SEMiX653GB176HDs Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC Tj = 25 °C Tj = 150 °C 1700 V Tc = 25 °C 619 A Tc = 80 °C 438 A 450 A ICnom ICRM SEMiX 3s Trench IGBT Modules ICRM = 2xICnom 900 A -20 . 20 V 10 µs -55 . 150 °C


    Original     		PDF SEMiX653GB176HDs E63532

    Untitled

    Abstract: No abstract text available
    Text: SEMiX653GB176HDs Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC Tj = 150 °C 1700 V Tc = 25 °C 619 A Tc = 80 °C 438 A 450 A ICnom ICRM SEMiX 3s Trench IGBT Modules ICRM = 2xICnom 900 A -20 . 20 V 10 µs -55 . 150 °C Tc = 25 °C


    Original     		PDF SEMiX653GB176HDs

    E63532

    Abstract: No abstract text available
    Text: SEMiX653GB176HDs Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC ICRM Tj = 150°C 1700 V Tc = 25°C 619 A Tc = 80°C 438 A 900 A -20 . 20 V 10 µs -55 . 150 °C Tc = 25°C 545 A Tc = 80°C 365 A ICRM = 2xICnom VGES SEMiX 3s Trench IGBT Modules


    Original     		PDF SEMiX653GB176HDs E63532

    Untitled

    Abstract: No abstract text available
    Text: SEMiX653GB176HDs Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC Tj = 150 °C 1700 V Tc = 25 °C 619 A Tc = 80 °C 438 A 450 A ICnom ICRM SEMiX 3s Trench IGBT Modules ICRM = 2xICnom 900 A -20 . 20 V 10 µs -55 . 150 °C Tc = 25 °C


    Original     		PDF SEMiX653GB176HDs

    Untitled

    Abstract: No abstract text available
    Text: SEMiX653GB176HDs Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC Tj = 150 °C 1700 V Tc = 25 °C 619 A Tc = 80 °C 438 A 450 A ICnom ICRM SEMiX 3s Trench IGBT Modules ICRM = 2xICnom 900 A -20 . 20 V 10 µs -55 . 150 °C Tc = 25 °C


    Original     		PDF SEMiX653GB176HDs

    Untitled

    Abstract: No abstract text available
    Text: SEMiX653GB176HDs Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC ICRM Tj = 150°C 1700 V Tc = 25°C 619 A Tc = 80°C 438 A 900 A -20 . 20 V 10 µs -55 . 150 °C Tc = 25°C 545 A Tc = 80°C 365 A ICRM = 2xICnom VGES SEMiX 3s Trench IGBT Modules


    Original     		PDF SEMiX653GB176HDs B100/125 R100exp B100/125 1/T-1/T100)

    IC1700

    Abstract: No abstract text available
    Text: SEMiX653GB176HDs Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC Tj = 150 °C 1700 V Tc = 25 °C 619 A Tc = 80 °C 438 A 450 A ICnom ICRM SEMiX 3s Trench IGBT Modules ICRM = 2xICnom 900 A -20 . 20 V 10 µs -55 . 150 °C Tc = 25 °C


    Original     		PDF SEMiX653GB176HDs IC1700

    irfb4115

    Abstract: BTY79 equivalent diode skn 21-04 marking CODE W04 sot-23 bbc 598 479 DIODE mw 137 600g TFK 401 S 673 Vishay Telefunken tfk transistor INFINEON transistor marking W31 JYs marking transistor
    Text: 573 Technical portal and online community for Design Engineers - www.element-14.com Discrete & Power Devices Page 700 Bridge Rectifiers . . . . . . . . . . . . . . . . . . . . . . . . Diodes Schottky . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .


    Original     		PDF element-14 F155-6A F155-10A F165-15A F175-25A irfb4115 BTY79 equivalent diode skn 21-04 marking CODE W04 sot-23 bbc 598 479 DIODE mw 137 600g TFK 401 S 673 Vishay Telefunken tfk transistor INFINEON transistor marking W31 JYs marking transistor

    SEMIX353GB126V1

    Abstract: SEMIX703GB126V1 semix503gb126v1 SEMiX653GD176v1 SEMIX252GB126V1 SEMiX241MD008s SEMIX302GB126V1 semix503gb126v SEMIX353GB126HDS SEMiX353GD176v1
    Text: Product Change Notification product group: SEMiX no.: 09-039 Change of SEMiX housing subject of change: change of SEMiX housing, namely form of nuts at the main terminals, housing material, one-piece housing, mounting domes for driver assembly and spring slots


    Original     		PDF SK645FR substit43/09 JESD46 1005/Rev SEMIX353GB126V1 SEMIX703GB126V1 semix503gb126v1 SEMiX653GD176v1 SEMIX252GB126V1 SEMiX241MD008s SEMIX302GB126V1 semix503gb126v SEMIX353GB126HDS SEMiX353GD176v1