Untitled
Abstract: No abstract text available
Text: DISCRETE SEMICONDUCTORS DAT BT137X series E Triacs sensitive gate Product specification June 2001 NXP Semiconductors Product specification Triacs sensitive gate GENERAL DESCRIPTION Passivated, sensitive gate triacs in a full pack, plastic envelope, intended
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BT137X
OT186A
BT137XRepetitive
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Untitled
Abstract: No abstract text available
Text: DISCRETE SEMICONDUCTORS DATA SHEET BT138B series E Triacs sensitive gate Product specification July 2001 NXP Semiconductors Product specification Triacs sensitive gate GENERAL DESCRIPTION Passivated, sensitive gate triacs in a plastic envelope suitable for surface
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BT138B
BT138BRepetitive
OT404
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Untitled
Abstract: No abstract text available
Text: DISCRETE SEMICONDUCTORS DATA SHEET BT136X series E Triacs sensitive gate Product specification June 2001 NXP Semiconductors Product specification Triacs sensitive gate GENERAL DESCRIPTION Passivated, sensitive gate triacs in a full pack plastic envelope, intended for
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BT136X
OT186A
BT136XRepetitive
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Untitled
Abstract: No abstract text available
Text: DISCRETE SEMICONDUCTORS DATA SHEET BT136X series E Triacs sensitive gate Product specification June 2001 NXP Semiconductors Product specification Triacs sensitive gate GENERAL DESCRIPTION Passivated, sensitive gate triacs in a full pack plastic envelope, intended for
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BT136X
BT136XRepetitive
OT186A
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Untitled
Abstract: No abstract text available
Text: DISCRETE SEMICONDUCTORS DATA SHEET BT137X series E Triacs sensitive gate Product specification June 2001 NXP Semiconductors Product specification Triacs sensitive gate GENERAL DESCRIPTION Passivated, sensitive gate triacs in a full pack, plastic envelope, intended
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BT137X
BT137XRepetitive
OT186A
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Untitled
Abstract: No abstract text available
Text: DISCRETE SEMICONDUCTORS '$7$ 6+ 7 2N5064 Thyristor sensitive gate Product specification October 1997 1;3 Semiconductors Product specification Thyristor sensitive gate GENERAL DESCRIPTION Glass passivated sensitive gate thyristor in a plastic envelope, intended for use in general purpose
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2N5064
2N5064
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Untitled
Abstract: No abstract text available
Text: DISCRETE SEMICONDUCTORS DATA SHEET BT134W series E Triacs sensitive gate Product specification August 1997 1;3 Semiconductors Product specification Triacs sensitive gate BT134W series E GENERAL DESCRIPTION Glass passivated, sensitive gate triacs in a plastic envelope suitable for
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BT134W
OT223
BT134WRepetitive
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Untitled
Abstract: No abstract text available
Text: DISCRETE SEMICONDUCTORS DATA SHEET BT134W series E Triacs sensitive gate Product specification August 1997 1;3 Semiconductors Product specification Triacs sensitive gate BT134W series E GENERAL DESCRIPTION Glass passivated, sensitive gate triacs in a plastic envelope suitable for
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BT134W
BT134WRepetitive
OT223
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Untitled
Abstract: No abstract text available
Text: DISCRETE SEMICONDUCTORS '$7$ 6+ 7 BT134 series E Triacs sensitive gate Product specification August 1997 1;3 Semiconductors Product specification Triacs sensitive gate BT134 series E GENERAL DESCRIPTION Glass passivated, sensitive gate triacs in a plastic envelope, intended
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BT134
BT134Repetitive
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BT136 testing
Abstract: BT134 TRIAC
Text: DISCRETE SEMICONDUCTORS '$7$ 6+ 7 BT134 series E Triacs sensitive gate Product specification August 1997 1;3 Semiconductors Product specification Triacs sensitive gate BT134 series E GENERAL DESCRIPTION Glass passivated, sensitive gate triacs in a plastic envelope, intended
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BT134
BT134Repetitive
BT136 testing
BT134 TRIAC
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Untitled
Abstract: No abstract text available
Text: DISCRETE SEMICONDUCTORS '$7$ 6+ 7 2N5064 Thyristor sensitive gate Product specification October 1997 1;3 Semiconductors Product specification Thyristor sensitive gate GENERAL DESCRIPTION Glass passivated sensitive gate thyristor in a plastic envelope, intended for use in general purpose
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2N5064
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SCR Gate Drive
Abstract: FS0802 FS0802DW
Text: semiconductors : product : Sensitive Gate SCRs Product: Sensitive Gate SCRs Sensitive Gate SCRs are easy to drive thanks to their very low gate current triggering. This high gate sensitivity allows direct triggering from outputs of low power microcontrollers or logic IC,
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FS0802DW
FS08W
O220F
FS0802
O220-F
SCR Gate Drive
FS0802DW
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EC103D1
Abstract: SC-43A
Text: EC103D1 Thyristor, sensitive gate Rev. 02 — 31 July 2008 Product data sheet 1. Product profile 1.1 General description Passivated ultra sensitive gate thyristor in a SOT54 plastic package. 1.2 Features • Ultra sensitive gate ■ Direct interfacing to low power gate
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EC103D1
EC103D1
SC-43A
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BT138X
Abstract: BT138X-600D BT138X-600E BT138X-800E triac bt138x
Text: BT138X series D and E 12 A four-quadrant triacs, sensitive gate Rev. 03 — 10 March 2008 Product data sheet 1. Product profile 1.1 General description Passivated sensitive gate triac in a SOT186A full pack plastic package. 1.2 Features • Very sensitive gate
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BT138X
OT186A
BT138X-600D)
BT138X-600E)
BT138X-800E)
BT138ons
BT138X-600D
BT138X-600E
BT138X-800E
triac bt138x
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bt138
Abstract: BT138-800E TRIAC BT138 BT138-600D BT138-600E BT138 Series E BT138S
Text: BT138 series D and E 12 A four-quadrant triacs, sensitive gate Rev. 02 — 12 March 2008 Product data sheet 1. Product profile 1.1 General description Passivated sensitive gate triac in a SOT78 plastic package. 1.2 Features • Very sensitive gate ■ Direct interfacing to logic level ICs
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BT138
BT138-600D)
BT138-600E)
BT138-800E)
BT138-800E
TRIAC BT138
BT138-600D
BT138-600E
BT138 Series E
BT138S
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str4a60s
Abstract: STR4A60
Text: STR4A60S SemiWell Semiconductor Sensitive Gate Triacs Symbol ○ Features ▼▲ Repetitive Peak Off-State Voltage : 600V R.M.S On-State Current IT(RMS = 4 A ) ◆ High Commutation dv/dt ◆ Sensitive Gate Triggering 4 Mode ◆ ○ ◆ 1.T1 This device is sensitive gate triac suitable for direct coupling
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STR4A60S
O-126
O-126
str4a60s
STR4A60
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STR4A60S
Abstract: light sensitive trigger circuit Application STR4A60
Text: STR4A60S SemiWell Semiconductor Sensitive Gate Triacs Symbol ○ Features ▼▲ Repetitive Peak Off-State Voltage : 600V R.M.S On-State Current IT(RMS = 4 A ) ◆ High Commutation dv/dt ◆ Sensitive Gate Triggering 4 Mode ◆ ○ ◆ 1.T1 This device is sensitive gate triac suitable for direct coupling
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STR4A60S
O-126
O-126
STR4A60S
light sensitive trigger circuit Application
STR4A60
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Untitled
Abstract: No abstract text available
Text: Philips Semiconductors Product specification Triacs BT139 series E sensitive GENERAL DESCRIPTION Glass passivated, sensitive gate triacs in a plastic envelope, intended for use in general purpose
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OCR Scan
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BT139
O220AB
BT139-
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Triac bt134 500e
Abstract: No abstract text available
Text: Product specification Philips Semiconductors Triacs BT134 series E sensitive GENERAL DESCRIPTION Glass passivated, sensitive gate triacs in a plastic envelope, intended for use in general purpose
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OCR Scan
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PDF
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BT134
BT134Repetitive
-11-LL11
Triac bt134 500e
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Untitled
Abstract: No abstract text available
Text: Philips Semiconductors Product specification Thyristor 2N5064 sensitive GENERAL DESCRIPTION G lass passivated sensitive gate thyristor in a plastic envelope, intended for use in general purpose switching
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OCR Scan
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PDF
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2N5064
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MAC97AB
Abstract: 2N6070 MOTOROLA MAC97 2N6070A 2N6343 MAC-97 2N6343 MOTOROLA 2N6074 2N6075A 2N6070
Text: TRIACs ON-STATE RMS CURRENT ON-STATE (RMS) CURRENT 0.6 AMPS 4.0 AMPS Tc = 50°C Tc = 85" Sensitive Gate Sensitive Gate Sensitive Gate Case 29-02 TO-226AA (TO-92) Style 12 Case 77-04 Style 5 Case 221A-02 T0-220AB Style 4 / 8.0AMPS / Tc = 80°C 2N6069 2N6069A
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O-226AA
21A-02
T0-220AB
2N6069
2N6069A
2N6069B
MAC97-3
MAC97A3
2N6070
2N6070A
MAC97AB
2N6070 MOTOROLA
MAC97
2N6343
MAC-97
2N6343 MOTOROLA
2N6074
2N6075A
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Untitled
Abstract: No abstract text available
Text: Philips Semiconductors Product specification Triacs BT138 series E sensitive gate_ _ GENERAL DESCRIPTION Glass passivated, sensitive gate triacs in a plastic envelope, intended for use in general purpose
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OCR Scan
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BT138
O220AB
BT138Repetitive
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nte5455
Abstract: nte5679 NTE5402 NTE5556 NTE5614 NTE5534 NTE5457 NTE5646 NTE5468 NTE5629
Text: N T E ELECTRONICS INC SEE D Bi b 4 3 1 2 S ci DGOs'bSfi 4TS INTE SfcLCQN CQNTROLLE&REeB FOR PHASE CONTROL APPLICATIONS DC or Pk Votts V DRM i (t(rmS) Maximum Forward Current Amps (A ll Conducting Angles) 0.8A 3A Sensitive Sensitive Gate Gate 4A Sensitive Gate
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b431SSci
NTE5480
NTE5400
NTE5411
NTE5452
NTE5453
NTE5470
NTE5442
NTE5481
NTE5461
nte5455
nte5679
NTE5402
NTE5556
NTE5614
NTE5534
NTE5457
NTE5646
NTE5468
NTE5629
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NTE5405
Abstract: GT 32 DIAC
Text: N T E ELECTRON ICS INC SEE D Bi b 4 3 1 2 S ci DGOs'bSfi 4TS INTE SfcLCQN CQNTROLLE&REeB FOR PHASE CONTROL APPLICATIONS DC or Pk Votts V DRM i (t(rmS) Maximum Forward Current Amps (All Conducting Angles) 0.8A 3A Sensitive Sensitive Gate Gate 4A Sensitive Gate
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OCR Scan
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PDF
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NTE5480
NTE5411
NTE5400
NTE5452
NTE5453
NTE5442
NTE5470
NTE5401
NTE5402
NTE5413
NTE5405
GT 32 DIAC
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