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    SGM2014 Search Results

    SGM2014 Datasheets (13)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    SGM2014 Shengbang Microelectronics Low Power, Low Dropout, 250mA, RF - Linear Regulators Original PDF
    SGM2014 Sony GaAs N-channel Dual Gate MES FET Original PDF
    SGM2014-1.5 Shengbang Microelectronics Low Power, Low Dropout, 250mA, RF - Linear Regulators Original PDF
    SGM2014-1.8 Shengbang Microelectronics Low Power, Low Dropout, 250mA, RF - Linear Regulators Original PDF
    SGM2014-2.5 Shengbang Microelectronics Low Power, Low Dropout, 250mA, RF - Linear Regulators Original PDF
    SGM2014AM Sony GaAs N-channel Dual Gate MES FET Original PDF
    SGM2014AM Sony GaAs N-channel Dual Gate MES FET Original PDF
    SGM2014AN Sony GaAs N-channel Dual Gate MES FET Original PDF
    SGM2014AN Sony GaAs N-channel Dual Gate MES FET Original PDF
    SGM2014M Sony GaAs N-channel Dual Gate MES FET Original PDF
    SGM2014M Sony Gaas N-channel Dual Gate Mes Fet Scan PDF
    SGM2014M Sony GaAs N-channel Dual-Gate MES FET Scan PDF
    SGM2014M Sony GaAs N-channel Dual Gate MES FET Scan PDF

    SGM2014 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    "GaAs N-channel Dual Gate"

    Abstract: SGM2014AN Sony Semiconductor M-281
    Text: SGM2014AN GaAs N-channel Dual Gate MES FET For the availability of this product, please contact the sales office. Description The SGM2014AN is an N-channel dual gate GaAs MES FET for UHF band low-noise amplification. This FET is suitable for a wide range of applications


    Original     		PDF SGM2014AN SGM2014AN M-281 900MHz "GaAs N-channel Dual Gate" Sony Semiconductor M-281

    BZM55B5V6

    Abstract: SGM2014 sg sot23 marking 1F 6 pin Zener diode sot23-5
    Text: SGM2014 Low Power, Low Dropout, 250mA, RF - Linear Regulators GENERAL DESCRIPTION FEATURES The SGM2014 series low-power, low-noise, low-dropout, CMOS linear voltage regulators operate from a 2.5V to 5.5V input and deliver up to 250mA. They are the perfect choice for low voltage, low power applications.


    Original     		PDF SGM2014 250mA, SGM2014 250mA. current160 250mA 250mV BZM55B5V6 sg sot23 marking 1F 6 pin Zener diode sot23-5

    N-Channel, Dual-Gate FET

    Abstract: SGM2014AM
    Text: SGM2014AM GaAs N-channel Dual Gate MES FET For the availability of this product, please contact the sales office. Description The SGM2014AM is an N-channel dual gate GaAs MES FET for UHF band low-noise amplification. This FET is suitable for a wide range of applications


    Original     		PDF SGM2014AM SGM2014AM 900MHz M-254 N-Channel, Dual-Gate FET

    Untitled

    Abstract: No abstract text available
    Text: SGM2014 Low Power, Low Dropout, 250mA, RF - Linear Regulators GENERAL DESCRIPTION FEATURES The SGM2014 series low-power, low-noise, low-dropout, z Low Output Noise: 30µVRMS TYP 10Hz to 100kHz CMOS linear voltage regulators operate from a 2.5V to z Ultra-Low Dropout Voltage:


    Original     		PDF SGM2014 250mA, SGM2014 100kHz) 250mA. 250mV 250mA

    Untitled

    Abstract: No abstract text available
    Text: SGM2014AN GaAs N-channel Dual Gate MES FET Description The SGM2014AN is an N-channel dual gate GaAs MES FET for UHF band low-noise amplification. This FET is suitable for a wide range of applications including TV tuners, cellular radios, and DBS IF amplifiers.


    Original     		PDF SGM2014AN SGM2014AN M-281 900MHz

    Untitled

    Abstract: No abstract text available
    Text: SGM2014AM GaAs N-channel Dual Gate MES FET Preliminary Description The SGM2014AM is an N-channel dual gate GaAs MES FET for UHF band low-noise amplification. This FET is suitable for a wide range of applications including TV tuners, cellular radios, and DBS IF


    Original     		PDF SGM2014AM SGM2014AM 900MHz M-254

    SGM2014AM

    Abstract: No abstract text available
    Text: SGM2014AM GaAs N-channel Dual Gate MES FET Description The SGM2014AM is an N-channel dual gate GaAs MES FET for UHF band low-noise amplification. This FET is suitable for a wide range of applications including TV tuners, cellular radios, and DBS IF amplifiers.


    Original     		PDF SGM2014AM SGM2014AM 900MHz M-254

    SGM2014AN

    Abstract: No abstract text available
    Text: SGM2014AN GaAs N-channel Dual Gate MES FET Description The SGM2014AN is an N-channel dual gate GaAs MES FET for UHF band low-noise amplification. This FET is suitable for a wide range of applications including TV tuners, cellular radios, and DBS IF amplifiers.


    Original     		PDF SGM2014AN SGM2014AN M-281 900MHz

    ILX511B

    Abstract: CXA1691 ILX511 optical pickup unit philips cdr 870 sony car stereo CXA2549M ILX511 applications deck sound filter CIRCUIT picture CXA1733M CXD3300R
    Text: CCD Under development CCD AREA IMAGE SENSOR COLOR VIDEO CAMERA CCD IMAGE SENSOR Product name Optical format inch TV system Effective pixels (H x V) Sensitivity Typ. (mV) Package Pins Recommended timing pulse generator ICX038BNA ICX038DNA ICX039BNA ICX039DNA


    Original     		PDF ICX038BNA ICX038DNA ICX039BNA ICX039DNA ICX038BNB ICX038DNB ICX039BNB ICX039DNB ICX054AK ICX055AK ILX511B CXA1691 ILX511 optical pickup unit philips cdr 870 sony car stereo CXA2549M ILX511 applications deck sound filter CIRCUIT picture CXA1733M CXD3300R

    cx20185

    Abstract: UHF FM Transceiver motorola 5118 motorola 5118 uhf CXA1446S Sony Semiconductor ILX511 CXA1691 CXA1733M CXA1619S SONY ICX
    Text: Sony Semiconductor 96.10 Sony Semiconductor Product List ’96 – 10 TABLE OF CONTENTS MEMORY CMOS/Bi-CMOS SRAM . 1 • LINEUP . 1


    Original     		PDF LCX009AK/AKB LCX011AM LCX012BL LCX016AL LCX016AM LCX019AM PHD003 PHD010 PHD011 PHD016 cx20185 UHF FM Transceiver motorola 5118 motorola 5118 uhf CXA1446S Sony Semiconductor ILX511 CXA1691 CXA1733M CXA1619S SONY ICX

    Untitled

    Abstract: No abstract text available
    Text: SONY SGM2014AN GaAs N-channel Dual Gate MES FET Preliminary Description The SGM2014AN is an N-channel dual gate GaAs MES FET for UHF band low-noise amplification. This FET is suitable for a wide range of applications including TV tuners, cellular radios, and DBS IF


    OCR Scan     		PDF SGM2014AN SGM2014AN 900MHz M-281 JO-651

    Untitled

    Abstract: No abstract text available
    Text: SONY S G M 2014A M GaAs N-channel Dual Gate MES FET Preliminary D escription The SGM2014AM is an N-channel dual gate GaAs MES FET for UHF band low-noise amplification. This FET is suitable for a wide range of applications including TV tuners, cellular radios, and DBS IF


    OCR Scan     		PDF SGM2014AM 900MHz DG2D044 SGM2014AM M-254

    fet dual gate sot143

    Abstract: SGM2014M
    Text: SGM2014M SONY, GaAs N-channel Dual Gate MES FET_ hor the availability of this product, please contact the sales officir] Description Package Outline Unit : mm The SGM2014M is an N-channel dual gate GaAs MES FET for UHF band low-noise amplification. This FET is


    OCR Scan     		PDF SGM2014M SGM2014M 900MHz Ga-18dB OT-143 -64l0Â fet dual gate sot143

    Sony Semiconductor M-281

    Abstract: No abstract text available
    Text: SONY GaAs N-channel Dual Gate MES FET Description The SGM2014AN is an N-channel dual gate GaAs MES FET for UHF band low-noise amplification. This FET is suitable for a wide range of applications including TV tuners, cellular radios, and DBS IF amplifiers.


    OCR Scan     		PDF SGM2014AN 900MHz 900MHz M-281 SGM2014AN M-281 Sony Semiconductor M-281

    Sony 104A

    Abstract: No abstract text available
    Text: SGM2014M] SONY. GaAs N-channel Dual Gate MES FET Description Package Outline The SGM2014M is an N-channel dual gate GaAs MES FET for UHF band low-noise amplification. This FET is suitable lor a wide range of applications including TV tuners, cellular radios, and DBS IF amplifiers.


    OCR Scan     		PDF SGM2014M] SGM2014M 900MHz at900MHz OT-143 M-254 Sony 104A