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    Text: SGN21C050MK High Voltage - High Power GaN-HEMT FEATURES High Voltage Operation : VDS=50V High Power : 47dBm typ. @ Psat High Efficiency: 65%(typ.) @ Psat Power Gain :18.5dB(typ.) @ f=2.14GHz Proven Reliability DESCRIPTION SEDI's GaN-HEMT offers high efficiency, ease of matching, greater


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    SGN21C050MK 47dBm 14GHz JESD22-A114) JEIA/ESD22-A115) PDF