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    Text: SGN21C320I2D High Voltage - High Power GaN-HEMT FEATURES High Voltage Operation : VDS=50V High Power : 55dBm typ. @ Psat High Efficiency: 65%(typ.) @ Psat Linear Gain : 18.5dB(typ.) @ f=2.14GHz Proven Reliability Only For peak stage of Doherty amplifier


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    PDF SGN21C320I2D 55dBm 14GHz 25deg 41dBm,