smd transistor x8
Abstract: smd transistor c011 12v 3a regulator LM317 WP smd transistor M5482 L298 L297 M5480 5kw dc-dc SGSF463 BYT12PI100
Text: DATA LOGGERS RECOMMENDED PRODUCTS FROM SGS-THOMSON PRINT HEAD HAMMER DRIVE Type Function ULN2003A ULN2064B ULN2068B ULN2074B L702N/A L6221AS L9222 High Current Darlington Drivers Medium Current Low Saturation Transistor Array BDX53 BDX54 Series BDW93 & BDW94 Series
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ULN2003A
ULN2064B
ULN2068B
ULN2074B
L702N/A
L6221AS
L9222
PBL3717A
L6201/2/3
L6204
smd transistor x8
smd transistor c011
12v 3a regulator LM317
WP smd transistor
M5482
L298 L297
M5480
5kw dc-dc
SGSF463
BYT12PI100
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PJ 1179
Abstract: M27512 12b1 M27F512 ST24C08B1 M27C256B-12F1 ST93C46AB1 m27c4001-12f1 m48z32y M27C1001-20F1 ST24C04CM6TR
Text: MEMORY SELECTOR Leading Edge Memories GO Leading Edge Memories Leading Edge Memories Flash Memories Serial and Parallel EEPROMs Application Specific Memories UV and OTP EPROMs Non-Volatile RAMs Broad Range SGS-THOMSON is a world leader in non-volatile memories, manufacturing a
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misplaced Wire Bonds
Abstract: TOP SIDE MARKING M27C512 1562Q M27C512 SGS-THOMSON
Text: QUALITY & RELIABILITY REPORT January to December 1995 - EPROM, FLASH Memory, EEPROM and SRAM Products INTRODUCTION SGS-THOMSON manufactures a wide range of memory types which include: Non-volatile memories: FLASH Memory, EPROM, OTP Memory and EEPROMs. EPROM products are manufactured in both 1.5µ NMOS and 0.8
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SGS M27C256
Abstract: TOP SIDE MARKING M27C512 M27C256 SGS-THOMSON mk48t08 BV 726 B m27c mk48t18 SGS M2732A Eprom 2015 static ram CP 1005
Text: QUALITY & RELIABILITY REPORT October 1996 to September 1997 - EPROM, FLASH Memory, EEPROM and SRAM Products INTRODUCTION SGS-THOMSON manufactures a wide range of memory types which include: Non-volatile memories: Flash memory, UV EPROM, OTP EPROM and EEPROMs. EPROM products are manufactured in both 1.5µ NMOS and 0.8
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Untitled
Abstract: No abstract text available
Text: QUALITY & RELIABILITY REPORT April 1995 to March 1996 - EPROM, FLASH Memory, EEPROM and SRAM Products INTRODUCTION SGS-THOMSON manufactures a wide range of memory types which include: Non-volatile memories: FLASH Memory, UV EPROM, OTP EPROM and EEPROMs. EPROM products are manufactured in both 1.5µ NMOS and 0.8
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TOP SIDE MARKING M27C512
Abstract: m27c512 equivalent 4Q96 M27128A M2716 M2732A M2764A QRR037 4Q96-1Q97 M27C256B datecode
Text: QUALITY & RELIABILITY REPORT April 1996 to March 1997 - EPROM, FLASH Memory, EEPROM and SRAM Products INTRODUCTION SGS-THOMSON manufactures a wide range of memory types which include: Non-volatile memories: FLASH Memory, UV EPROM, OTP EPROM and EEPROMs. EPROM products are manufactured in both 1.5µ NMOS and 0.8
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QRR037/0697
TOP SIDE MARKING M27C512
m27c512 equivalent
4Q96
M27128A
M2716
M2732A
M2764A
QRR037
4Q96-1Q97
M27C256B datecode
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TOP SIDE MARKING M27C512
Abstract: No abstract text available
Text: QUALITY & RELIABILITY REPORT October 1995 to September 1996 - EPROM, FLASH Memory, EEPROM and SRAM Products INTRODUCTION SGS-THOMSON manufactures a wide range of memory types which include: Non-volatile memories: FLASH Memory, UV EPROM, OTP EPROM and EEPROMs. EPROM products are manufactured in both 1.5µ NMOS and 0.8
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M27C512 SGS-THOMSON
Abstract: M2201 ST93C46
Text: QUALITY & RELIABILITY REPORT July 1995 to June 1996 - EPROM, FLASH Memory, EEPROM and SRAM Products INTRODUCTION SGS-THOMSON manufactures a wide range of memory types which include: Non-volatile memories: FLASH Memory, UV EPROM, OTP EPROM and EEPROMs. EPROM products are manufactured in both 1.5µ NMOS and 0.8
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M27C256B datecode
Abstract: PART MARKING M27C512 M27C256B PART MARKING m27c512 equivalent M27C256 M27C512 marking M27128A M2716 M2764A QRR038
Text: QUALITY & RELIABILITY REPORT July 1996 to June 1997 - EPROM, FLASH Memory, EEPROM and SRAM Products INTRODUCTION SGS-THOMSON manufactures a wide range of memory types which include: Non-volatile memories: Flash memory, UV EPROM, OTP EPROM and EEPROMs. EPROM products are manufactured in both 1.5µ NMOS and 0.8
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bul49d equivalent
Abstract: 12B1 ZENER 10A triac control PWM battery Charger AVS10CB1 thyristor battery charger 24v transistor equivalent table BUL49D ST62T10B6_HWD sgs Thomson Thyristor 220v ac to 5v dc 100w smps rectifier bridge 300v 30a
Text: INDEX ST Part No. Farnell Order Code Description AMST62APPST/1 AVS10CB1 AVS1ACP08 BUL49D CDDATASHXXX DBST6ST/4 EFS11 EFS1ACD EFS21 EFS2ACD FLC10-200D L6219 LPR30 MC3403N ST62-CDROM ST7-CDROM ST7MDT1-EPB/UK ST7MDT1-KIT/UK ST7MDT2-EPB/UK ST7MDT2-KIT/UK STP80NS04Z
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AMST62APPST/1
AVS10CB1
AVS1ACP08
BUL49D
EFS11
EFS21
FLC10-200D
L6219
LPR30
MC3403N
bul49d equivalent
12B1 ZENER
10A triac control PWM battery Charger
AVS10CB1
thyristor battery charger 24v
transistor equivalent table BUL49D
ST62T10B6_HWD
sgs Thomson Thyristor
220v ac to 5v dc 100w smps
rectifier bridge 300v 30a
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TDA0161 equivalent
Abstract: 1N3393 BDX54F equivalent byt301000 bux transient voltage suppressor ST90R9 ua776mh sgs 2n3055 Transistor morocco mje13007 inmos transputer reference manual
Text: SHORTFORM 1995 NOVEMBER 1994 USE IN LIFE SUPPORT DEVICES OR SYSTEMS MUST BE EXPRESSLY AUTHORIZED SGS-THOMSON PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF SGS-THOMSON Microelectronics. As used herein:
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M27C2001-15F1
Abstract: 27c2001 M27C2001
Text: SGS-THOMSON M27C2001 IL I 2048K 256K x 8 CMOS UV EPROM VERY FAST ACCESS TIME : 120 ns. COMPATIBLE TO HIGH SPEED MICROPRO CESSORS ZERO WAIT STATE. LOW POWER "CMOS" CONSUMPTION : _ Operating current 35 mA _ Stand by current 200 jiA. PROGRAMMING VOLTAGE 12.75V.
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M27C2001
2048K
M27C2001
FDIP32-W
FDIP32-W
32-PIN
M27C2001-15F1
27c2001
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SGS M27C2001
Abstract: 1N914 IA10 M27C2001 TSOP32 am27c2001
Text: SGS"THOMSON !lLi TIM Raû©i M27C2001 2 Megabit 256K x 8) UV EPROM and OTP ROM • VERY FAST ACCESS TIME: 70ns ■ COMPATIBLE with HIGHSPEED MICROPROCESSORS, ZERO WAIT STATE ■ LOW POWER ’’CMOS” CONSUMPTION: - Active Current 30mA - Standby Current 100(xA
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M27C2001
24sec.
M27C2001
as262
TSOP32
TSOP32
7TST237
SGS M27C2001
1N914
IA10
am27c2001
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Untitled
Abstract: No abstract text available
Text: r Z J SGS-THOMSON [ L ir a » « M27C2001 CMOS 2 Megabit 256K x 8 UV EPROM and OTP ROM • VERY FAST ACCESS TIME: 80ns ■ COMPATIBLE WITH HIGH SPEED MICRO PROCESSORS, ZERO WAIT STATE ■ LOW POWER "CMOS" CONSUMPTION: - Active Current 30mA - Standby Current 100nA
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M27C2001
100nA
24sec.
M27C2001
C2001
FDIP32W
PDIP32
LCCC32W
PLCC32
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256x16 eprom
Abstract: GS-2I5-D12 GS-D250M PHDIP28 GS-2I12-9 512X8 from 128x8 ram L293D shield gs-2i5 PHDIP24 ESM1602B
Text: SELECTION GUIDE For detailed information on products referred to in the selection guide but not included as datasheet in this book, please refer to the databook indicated in column "DB" SGS-THOMSON DATABOOKS ORDER CODE DB a 4 B IT MCU FAMILY ET9400 DBET9400ST/1
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ET9400
EF6801/04/05
ISB12000
ISB18000
MKI48Z18
PHDIP28
MK48Z30,
256x16 eprom
GS-2I5-D12
GS-D250M
GS-2I12-9
512X8 from 128x8 ram
L293D shield
gs-2i5
PHDIP24
ESM1602B
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M27W201
Abstract: AN620 M27C2001 PLCC32 TSOP32 Application Note EPROM Programming
Text: . . SGS-THOMSON k7 # . M27W201 RfilDÊlMSJlilLIlÊ'inEORODtgS 2 Mbit 256Kb x 8 Low Voltage OTP EPROM • LOW VOLTAGE READ OPERATION: 2.7V to 3.6V ■ FAST ACCESS TIME: - 70ns at Vcc = 3.0V to 3.6V - 80ns at Vcc = 2.7V to 3.6V ■ LOW POWER CONSUMPTION: - Active Current 15mA
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M27W201
256Kb
24sec.
M27W201
TSOP32
AN620
M27C2001
PLCC32
Application Note EPROM Programming
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Untitled
Abstract: No abstract text available
Text: w# SGS-THOMSON M27V201 V # « RitlD M li[Lli©inS lii!lD©i LOW VOLTAGE 2 Megabit 256K x 8) UV EPROM and OTP EPROM NOT FOR NEW DESIGN LOW VOLTAGE READ OPERATION: 3V to 5.5V FAST ACCESS TIME: 120ns LOW POWER ’’CMOS” CONSUMPTION: - Active Current 30mA
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M27V201
120ns
24sec.
M27V201
M27C2001
M27W201
PLCC32
TSOP32
FDIP32W
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Untitled
Abstract: No abstract text available
Text: r Z J SGS-THOMSON M27V201 ^ T # . OKODÊlSûilLIllOTOliSIDÊi LOW VOLTAGE CMOS 2 Megabit 256K x 8 UV EPROM and OTP ROM ABBREVIATED DATA • LOW VOLTAGE READ OPERATION - Vcc Range: 3V to 5.5V (Ta = 0 to 70°C) - Vcc Range: 3.2V to 5.5V (TA = -40 to 85°C)
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M27V201
250ns
LCCC32W,
PLCC32
TSOP32
24sec.
M27V201
M27C2001
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Untitled
Abstract: No abstract text available
Text: SGS-lfiOMSON M27V201 m LOW VOLTAGE CMOS 2 Megabit 256K x 8 UV EPROM and OTP ROM LOW VOLTAGE READ OPERATION - Vcc Range: 3V to 5.5V (Ta = 0 to 70°C) - Vcc Range: 3.2V to 5.5V (T a = -4 0 to 85°C) ACCESS TIME: 200 and 250ns LOW POWER "CMOS" CONSUMPTION:
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M27V201
250ns
LCCC32W,
PLCC32
TSOP32
24sec.
M27V201
M27C2001
r--------------------148
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M27W201
Abstract: No abstract text available
Text: w# SGS-THOMSON M27W201 V # « RitlD M li[Lli©inS lii!lD©i 2 Mbit 256Kb x 8) Low Voltage OTP EPROM LOW VOLTAGE READ OPERATION: 2.7V to 3.6V FAST ACC ESS TIME: - 70ns at Vcc = 3.0V to 3.6V - 80ns at Vcc = 2.7V to 3.6V LOW POWER CONSUMPTION: - Active Current 15mA
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M27W201
256Kb
24sec.
PLCC32
TSOP32
M27W201
TSOP32
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M27C2001
Abstract: M27V201 PLCC32
Text: SGS-1H0MS0N M27V201 iy LOW VOLTAGE CMOS 2 Megabit 256K x 8 UV EPROM and OTP ROM ADVANCE DATA • LOW VOLTAGE READ OPERATION - Vcc Range: 3V to 5.5V (T a = 0 to 70°C) - Vcc Range: 3.2V to 5.5V (T a = - 4 0 to 85°C) ■ ACCESS TIME: 200 and 250ns ■ LOW POWER “C M O S” CONSUMPTION:
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M27V201
250ns
LCCC32W,
PLCC32
24sec.
M27V201
M27C2001
PLCC32
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Untitled
Abstract: No abstract text available
Text: 5 7 , SGS-THOMSON M27V201 LOW VOLTAGE CMOS 2 Megabit 256K x 8 UV EPROM and OTP ROM ADVANCE DATA • LOW VOLTAGE READ OPERATION - Vcc Range: 3V to 5.5V (T a = 0 to 70°C) - Vcc Range: 3.2V to 5.5V (T a = - 4 0 to 85°C) ■ ACCESS TIM E: 200 and 250ns ■ LOW POWER “CMOS" CONSUMPTION:
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M27V201
250ns
LCCC32W,
PLCC32
24sec.
M27V201
M27C2001
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WM-52E
Abstract: No abstract text available
Text: S2E » • 712*1237 0037b34_470 ■S6TH S fi SGS-THOMSON T ~ if é - I 3 ~ 2 c\ S-THOMSON M27V201 LOW VOLTAGE CMOS 2 Megabit 256K x 8 UV EPROM and OTP ROM ADVANCE DATA ■ LOW VOLTAGE READ OPERATION - Vcc Range: 3V to 5.5V (Ta = 0 to 70°C) - Vcc Range: 3.2V to 5.5V (Ta = -40 to 85°C)
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0037b34
M27V201
250ns
LCCC32W,
PLCC32
24sec.
M27V201
M27C2001
TheM27V201
WM-52E
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sgs thomson
Abstract: FDIP24 M87C512 eprom rom 512k x 16 bits M27C512 SGS-THOMSON capacity of EPROM
Text: ORGANIZATION ACCESS TIME PART NUMBER PACKAGE POWER SUPPLY CONSUMPTION A C T / STANDBY 16K Bits 2K x 8 350 ns M2716 FDIP 24 24K Bits 4K x 8 200 ns 4,75 to 5,25V 1 0 0 /2 5 mA 4,5 to 5,5V 450 ns M2732A FDIP 24 4,75 to 5,25V 1 2 5 /3 5 mA 4,5 to 5,5V 250 ns 300 ns
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M27512
M27256
M27128A
M2764A
M2732A
M2716
64x16
128x8
128x16
sgs thomson
FDIP24
M87C512
eprom rom 512k x 16 bits
M27C512 SGS-THOMSON
capacity of EPROM
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