Untitled
Abstract: No abstract text available
Text: SGSP255 Transistors N-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)400 V(BR)GSS (V) I(D) Max. (A)1.5 I(DM) Max. (A) Pulsed I(D) @Temp (øC) IDM Max (@25øC Amb) @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)40 Minimum Operating Temp (øC)
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SGSP255
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Untitled
Abstract: No abstract text available
Text: SGSP254 Transistors N-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)450 V(BR)GSS (V) I(D) Max. (A)1.5 I(DM) Max. (A) Pulsed I(D) @Temp (øC) IDM Max (@25øC Amb) @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)40 Minimum Operating Temp (øC)
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SGSP254
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Untitled
Abstract: No abstract text available
Text: SGSP256 Transistors N-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)350 V(BR)GSS (V) I(D) Max. (A)1.5 I(DM) Max. (A) Pulsed I(D) @Temp (øC) IDM Max (@25øC Amb) @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)40 Minimum Operating Temp (øC)
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SGSP256
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sgsp531
Abstract: 2sk76 irf33 unitrode VN0340N5 MTD1N40-1 sfn02806 stm231 stm331 650P
Text: MOSFET Item Number Part Number Manufacturer V BR OSS (V) loss Max (A) Po Max (W) ros (on) (Ohms) 9FS VGS(th) Min Max (V) (5) 'sa C Max (F) tr Max (5) tf Max (5) Toper Max (OC) Package Style 150 150 J 150 J 150 150 150 J 150 J 150 A 150 J 150 J TO-39 TO-92
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VN0640N2
TX106
IRF712
VN0340N2
MTD1N40
MTD1N40-1
RFP1N40
IRFF312
IRFF312
sgsp531
2sk76
irf33
unitrode
VN0340N5
sfn02806
stm231
stm331
650P
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SGSP256
Abstract: SGSP356 SP156 sgsp254 sgsp354 SGSP154
Text: S G S-THOMSON D7E D | ÏTSTSB? 0017630 b | / J 3 C ~ J r Î3 3 5 D 7 ^ 3 9 -0 7 SGSP154 /155 /156 SGSP254/255/258 SGSP354/355/356 ^-CHANNEL POWER MOS TRANSISTORS HIGH SPEED SW ITCHIN G APPLICATIONS These products are diffused multi-cell silicon gate N-Channel enhancement mode Power-Mos field
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OCR Scan
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SGSP154
SGSP254/255/258
SGSP354/355/356
50V/400V
SGSP254
SGSP354
OT-82
O-220
SGSP155
SGSP256
SGSP356
SP156
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sgsp257
Abstract: GSP-35 P2-58 P357 SGSP258
Text: S G S-THOnSON 07E J> | 7cìacìS37 0017074 0 I ^ -V. , 73e 173 71 D SGSP257/P258^ r tf I h .SGSP^ 7 /P 3 5 8 J N-CHANNEL POWER MOS TRANSISTORS HIGH SPEED SWITCHING APPLICATIONS These products are diffused multi-cell silicon gate N-Channel enhancement mode Power-Mos field
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OCR Scan
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SGSP257/P258^
0V/60V
OT-82
SGSP257
SGSP357
SGSP258
SGSP358
257/P
SGSP357/P358
D--09
GSP-35
P2-58
P357
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x1rv
Abstract: SGSP151 SGSP252 sgsp251 P252 C SGSP351 FT04c
Text: S G S-THOMSON 07E D | 712^237 001703 1 3 73C 17 3 28 o 7 7 3 *1 -0 7 S A L V N-CHANNEL POWER MOS TRANSISTORS HIGH SPEED SWITCHING APPLICATIONS These products are diffused multi-cell silicon gate N-Channel enhancement mode Power-Mos field effect transistors.
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OCR Scan
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SGSPI51/P152
SGSP251/P252
SGSP351/P352
OT-82
O-220
SGSP151
SGSP251
SGSP351
SGSP152
SGSP252
x1rv
P252 C
FT04c
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