Contextual Info: Si–A 1125/500–6 High Voltage Si-Rectifier Modul Si-Hochspannungs-Gleichrichter Modul Nominal current – Nennstrom 6A Repetitive peak reverse voltage Periodische Spitzensperrspannung 3000 V Plastic case Kunststoffgehäuse Ø 55 x 36 [mm] Weight approx. – Gewicht ca.

Contextual Info: Si–A 1125/500–6 High Voltage Si-Rectifier Modul Si-Hochspannungs-Gleichrichter Modul Nominal current – Nennstrom 6A Repetitive peak reverse voltage Periodische Spitzensperrspannung 3000 V Plastic case Kunststoffgehäuse Ø 55 x 36 [mm] Weight approx. – Gewicht ca.

Dioden Tabelle

Abstract: UGE 7.5
Contextual Info: UGE 0421 AY4 High Voltage Rectifiers Hochspannungsgleichrichter VRRM VV RMS VdT V V V 3200 1125 500 Standard VRRM = 3200 V VdT = 500 V IF(AV)M = 22.9 A Power Designation Anode Types UGE 0421 AY4 Si-E 1125 / 500-6 Kathode Symbol Test Conditions IF(RMS) IF(AV)M

Contextual Info: Diotec Si–A 1125/500–6 High Voltage Si-Rectifier Modul Si-Hochspannungs-Gleichrichter Modul Nominal current – Nennstrom 55 6A Repetitive peak reverse voltage Periodische Spitzensperrspannung 16 3000 V Plastic case Kunststoffgehäuse M8 Ø 55 x 36 [mm]

Contextual Info: CIIXYS UGE 0421 AY4 High Voltage Rectifiers Hochspannungsgleichrichter V V RM S > 3200 Standard > V RRM v dT V Types 1125 500 UGE 0421 AY4 Power Designation Test Conditions ^F(RMS) ^F(AV)M air self cooling, Si-E 1125 / 500-6 oil cooling, Features - w ithout cooling plate

Contextual Info: UGE 0421 AY4 High Voltage Rectifiers VRRM VV RMS VdT V V V 3200 1125 500 Standard VRRM = 3200 V VdT = 500 V IF(AV)M = 22.9 A Anode Power Designation Types UGE 0421 AY4 Si-E 1125 / 500-6 Cathode Symbol Test Conditions IF(RMS) IF(AV)M air self cooling, Ratings

Contextual Info: UGE 0421 AY4 VRRM = 3200 V IF AV M = 22.9 A High Voltage Rectifiers VRRM V Standard Types Power Designation 3200 UGE 0421 AY4 Si-E 1125 / 500-6 Anode Cathode Symbol Conditions Ratings Features Hermetically sealed Epoxy Use in oil Avalanche characteristics

Contextual Info: UGE 0421 AY4 VRRM = 3200 V IF AV M = 22.9 A High Voltage Rectifiers VRRM V Standard Types Power Designation 3200 UGE 0421 AY4 Si-E 1125 / 500-6 Anode Cathode Symbol Conditions Ratings Features Hermetically sealed Epoxy Use in oil Avalanche characteristics

Contextual Info: UGE 0421 AY4 High Voltage Rectifiers VRRM V Standard Types Power Designation 3200 UGE 0421 AY4 Si-E 1125 / 500-6 VRRM = 3200 V IF AV M = 22.9 A Anode Cathode Symbol Conditions IF(RMS) IF(AV)M air self cooling, Ratings forced air cooling: v = 3 m/s, Tamb = 35°C

K703

Contextual Info: Si-E 1125/500-6 . 5  : 4  4 4    = , >(-=& High voltage rectifiers <% 4 4  :<  :<  82 3 9 8: 3 9 8: 3 9   2)1 ')- ,)( (- > 82:< 82< B <% 4  $%  # :=# 59 3 (- ?7 ,1 : 4  $ 

Contextual Info: Si-E 1125/500-6 . 5  < 4  4 4    # *7-?-''#/ High voltage rectifiers > 4 4  <<>  <>  :2 3 ; :< 3 ; :<< 3 ;   271 .7'' *7- -'' ? :2<> :2> C >) 4  $)  9 <#9 5; 3 -' @8 *1 < 4  $ 

500-6

Abstract: 5006
Contextual Info: Si-E 1125/500-6 . 5  < 4  4 4    # *7-?-''#/ High voltage rectifiers > 4 4  <<>  <>  :2 3 ; :< 3 ; :<< 3 ;   271 .7'' *7- -'' ? :2<> :2> C >) 4  $)  9 <#9 5; 3 -' @8 *1 < 4  $ 

HA13421

Abstract: HA13421A MP-18 HA1342 ti 261 ha13421amp DHA1342IA 13421A dha-1 HA134
Contextual Info: IMT (E a rn (20)>S.\ 6 8 1I1Q 20 OI - i n p zÿ II 9 o ní) Z\ ONf) , 3A85 J3M0J UOUOdJIQ 1<P S QKO ei * aNO mo i-i £ UOIJMJIQ 10 i n o >0 SI 2 I0U M si * \ (10,ZS_\ 91- 8 l- d W V l3 frS lV H < d IA J V im iV H # * a s < p ïi top U<JliJdJI(j lip tip i <p

SKIIP513GB

Abstract: SKIIP513
Contextual Info: SKiiP 1513GB122-3DL I. Power section 3 * SKiiP513GB122CT per phase Absolute maximum ratings Symbol Conditions Values IGBT VCES 1 VCC Operating DC link voltage VGES IC T heat sink = 25 70) °C Inverse diode IF T heat sink = 25 (70) °C IFSM T j = 150 °C, tp = 10ms; sin

Contextual Info: Government and Space Products International IÖ R Rectifier •d Part Number T c= 2 S '>C *DS{on b VDSS w V) T , = 100°C (A) Total Dose Rating Rads (Si) @ Tc=25°C W HEXFET Power MOSFETs Fax on Case Demand Outline Number Key Radiation Hardened TO-254AA

BA15532

Contextual Info: BA15532/BA15532F/BA15532N BA15532/BA15532F D A 4 C C O O I • D u a l H ig h lw w W fc N ^ le w R a te ’ L o w Noise Operational Amplifiers • W Fi'tf S ll/ D im e n s io n s U n it: mm BA15532F, BA15532N tz to iC iS lC M t £ t T J ls t 'K 7 > ? X ‘ t „

IR LFN

Abstract: 3gk5 H11R LFN ir
Contextual Info: ESAC87M-009H6A i s a ' y h + — ✓ < x) 7 ¥ ^ : Outline Drawings — K SCHOTTKY BARRIER DIODE : Features JEDEC Insulated p ac ka g e by fully m o l d in g . EIAJ Low V f Connection Diagram Super high speed sw itchin g. H igh reliability by planer design.

AEC-Q100

Abstract: CAT15008 CAT15016
Contextual Info: CAT15008, CAT15016 Voltage Supervisor with 8-Kb and 16-Kb SPI Serial CMOS EEPROM FEATURES DESCRIPTION „ Precision Power Supply Voltage Monitor The CAT15008/16 see table below are memory and supervisory solutions for microcontroller based systems. A CMOS serial EEPROM memory and a system power

lcd panel schema

Abstract: RESTER 10K RESTER 1M CIRCUITO CON TIP 32 resistenze
Contextual Info: ABMESSUNGEN DIMENSIONS All dimensions in mm inches Alle Abmessungen in mm (Zoll) MONTAGE DES EMV 1125 FITTING THE EMV 1125 7 Bohren Sie ein 5,5 mm- Ø-Loch in die Gehäusewand. Montieren Sie das Modul, indem Sie seine Gewindeschraube und die Anschlußdrähte durch das

CIRCUITO CON TIP 32

Abstract: convertisseur dc dc CEE 32 DPCO LASCAR resistenze
Contextual Info: DIMENSIONS ABMESSUNGEN FITTING THE EMV 1125 MONTAGE DES EMV 1125 All dimensions in mm inches Alle Abmessungen in mm (Zoll) 7 Bohren Sie ein 5,5 mm- Ø-Loch in die Gehäusewand. Montieren Sie das Modul, indem Sie seine Gewindeschraube und die Anschlußdrähte durch das

phase comparator

Abstract: pulse generator 30hz
Contextual Info: SCS-THOMSON TDA9102B TDA9102C H/V PROCESSOR FOR TTL V.D.U PRELIMINARY DATA HORIZONTAL SECTION «SYNCHRONIZATION INPUT : TTL COM­ PATIBLE, NEGATIVE EDGE TRIGGERED • SYNCHRONIZATION INDEPENDENT FROM DUTY CYCLE TIME ■ OSCILLATOR : FREQUENCY RANGE FROM 15kHz to 100kHz

DG181

Abstract: DG381 DG381A DG384A DG387A DG390A DG391A
Contextual Info: - DG381 A S P S T CMOS Ti-a'f • X ' f -y?" x n T J l * SPST i H i« * ) CM OS -r b f J- f i x - , ^ > f t # « T -I- b 7" A t l id ± 15V , 7t- 7 ( i 30V p-p ' - i i i . D G 3 8 1 A -D G 3 9 1 A 7 t 5 y 14 DG181 7 r 5 1J O ^ >ÍIlÍ7L-30Qtyp O * - 7 / • * > ' ) — ? •••InA m ax (A

ERA83-006

Contextual Info: ERA83-006 i A * ± 'l'W 3? 4 * - V : Outline Drawings SCHO TTKY BARRIER DIODE Features • ifeVF : Marking Lo w V f tt 7 S u p e r h ig h speed s w itc h in g . Voltage class œV n 7 h Nq ¥ 4 * Lot No. O * H ig h re lia b ility by p la n e r d e s ig n .

A323

Abstract: ERA83-006 era83 MARKING a322
Contextual Info: ERA83-006 i A * ± 'l'W 3? 4 * - V : Outline Drawings SCHO TTKY BARRIER DIODE Features • ifeVF : Marking Lo w V f tt 7 S u p e r h ig h speed s w itc h in g . Voltage class œV n 7 h Nq ¥ 4 * Lot No. O * H ig h re lia b ility by p la n e r d e s ig n .