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    BLD135D

    Abstract: BLD128D BUL6802 BLD133D BLD137D bld128 BLD137 bld135 BLD139D BLD123D
    Text: 深圳深爱半导体有限公司 Shenzhen SI Semiconductors CO.,Ltd. http://www.sisemi.com.cn sisemi@sisemi.com.cn SI transistors Selection Guide 一Compact fluorescent lamps Energy-Saving Lamps : BVceo (V) Ic (A) Application(W) TO-92 TO-92 Die Size


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    PDF MJE13001 BUL6821 BUL6822 BUL6822A BUL6823 MJE13003BR O-126 BUL6802 BUL6823A BLD135D BLD128D BUL6802 BLD133D BLD137D bld128 BLD137 bld135 BLD139D BLD123D

    soa 01

    Abstract: MJE13007 NPN 400V 40A Si MJE13007
    Text: SI SEMICONDUCTORS CO.,LTD. Product specification NPN SILICON POWER TRANSISTOR ● FEATURES: MJE13007 •HIGH VOLTAGE CAPABILITY ■HIGH SWITCHING SPEED ■WIDE SOA ● APPLICATIONS: ■ELECTRONIC BALLASTS FOR FLUORESCENT LIGHTING ■COMPACT FLUORESCENT LAMP ■SWITCH MODE POWER SUPPLIES


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    PDF MJE13007 O-220 O-220 soa 01 MJE13007 NPN 400V 40A Si MJE13007

    MJE13007L

    Abstract: soa 01 NPN Transistor 50A 400V 110v dc power supplies
    Text: SI SEMICONDUCTORS CO.,LTD. Product specification NPN SILICON POWER TRANSISTOR ●FEATURES: MJE13007L •HIGH SWITCHING SPEED ■WIDE SOA ● APPLICATIONS: SUITABLE FOR 110V CIRCUIT MODE: ■COMPACT FLUORESCENT LAMP ■ELECTRONIC BALLASTS FOR FLUORESCENT LIGHTING ■SWITCH MODE POWER SUPPLIES


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    PDF MJE13007L O-220 O-220 MJE13007L soa 01 NPN Transistor 50A 400V 110v dc power supplies

    MJE13007H

    Abstract: FLUORESCENT
    Text: Shenzhen SI Semiconductors Co., LTD. Product Specification MJE13007H MJE 系列晶体管/MJE SERIES TRANSISTORS 系列晶体管 ●特点: 特点:耐高压 开关速度快 安全工作区宽 ●FEATURES:•HIGH VOLTAGE CAPABILITY ■HIGH SPEED SWITCHING


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    PDF MJE13007H O-220 O-220 MJE13007H FLUORESCENT

    Fluorescent BALLAST MJE13007

    Abstract: electronic ballast with MJE13007 electronic ballast MJE13007 MJE13007 ballast MJE13007 electronic ballast MJE13007 Shenzhen SI Semiconductors, LTD
    Text: Shenzhen SI Semiconductors Co., LTD. Product Specification MJE13007 MJE 系列晶体管/MJE SERIES TRANSISTORS 系列晶体管 ●特点: 特点:耐高压 开关速度快 安全工作区宽 ●FEATURES:•HIGH VOLTAGE CAPABILITY ■HIGH SPEED SWITCHING ■WIDE SOA


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    PDF MJE13007 O-220 O-220 Fluorescent BALLAST MJE13007 electronic ballast with MJE13007 electronic ballast MJE13007 MJE13007 ballast MJE13007 electronic ballast MJE13007 Shenzhen SI Semiconductors, LTD

    100-01A

    Abstract: TJ40A MJE1300 MJE13007A Shenzhen SI Semiconductors, LTD mje 31
    Text: Shenzhen SI Semiconductors Co., LTD. Product Specification MJE13007A MJE 系列晶体管/MJE SERIES TRANSISTORS 系列晶体管 ●特点: 特点:耐高压 开关速度快 安全工作区宽 ●FEATURES:•HIGH VOLTAGE CAPABILITY ■HIGH SPEED SWITCHING ■WIDE SOA


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    PDF MJE13007A O-220 O-220 100-01A TJ40A MJE1300 MJE13007A Shenzhen SI Semiconductors, LTD mje 31

    SI 122 D

    Abstract: electronic ballast with MJE13007 Fluorescent BALLAST MJE13007 mje13007 ballast MJE13007 electronic ballast MJE13007 Si MJE13007
    Text: Shenzhen SI Semiconductors Co., LTD. Product Specification MJE13007 MJE 系列晶体管/MJE SERIES TRANSISTORS 系列晶体管 ●特点: 特点:耐高压 开关速度快 安全工作区宽 ●FEATURES:•HIGH VOLTAGE CAPABILITY ■HIGH SPEED SWITCHING ■WIDE SOA


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    PDF MJE13007 O-263 O-263 SI 122 D electronic ballast with MJE13007 Fluorescent BALLAST MJE13007 mje13007 ballast MJE13007 electronic ballast MJE13007 Si MJE13007

    Untitled

    Abstract: No abstract text available
    Text: UNISONICTECHNOLOGIESCO., LTD MJE13007D NPN SILICON TRANSISTOR N PN BI POLAR POWER T RAN SI ST OR FOR SWI T CH I N G POWER SU PPLY APPLI CAT I ON S ̈ DESCRI PT I ON The UTC MJE13007D is designed for high-voltage, high-speed power switching inductive circuits where fall time is


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    PDF MJE13007D MJE13007D MJE13007DL-TA3-T MJE13007DG-TA3-T O-220 QW-R203-042

    Untitled

    Abstract: No abstract text available
    Text: UNISONICTECHNOLOGIESCO., LTD MJE13007-M NPN SILICON TRANSISTOR N PN BI POLAR POWER T RAN SI ST OR FOR SWI T CH I N G POWER SU PPLY APPLI CAT I ON S ̈ DESCRI PT I ON The UTC MJE13007-M is designed for high-voltage and high-speed power switching inductive circuits where fall time is


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    PDF MJE13007-M MJE13007-M MJE13007L-M-TA3-T MJE13007G-M-TA3-T O-220 QW-R204-028

    FN1016

    Abstract: 2sC9012 on4409 on4673 ON4843 C9012 S2000A3 bul310xi 2SD5080 MN1016
    Text: ТРАНЗИСТОРЫ БИПОЛЯРНЫЕ ИМПОРТНЫЕ Наименование 2N1112 2N1212 2N1217 2N1711 2N2219A 2N2222 Metal 2N2222A 2N2222Aмет 2N2369 2N2369A 2N2646 2N2905A 2N2905Aпластик 2N2907 2N2907(Metal) 2N3055 2N3055 2N3440 2N3773


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    PDF 2N1112 2N1212 2N1217 2N1711 2N2219A 2N2222 2N2222A 2N2369 2N2369A FN1016 2sC9012 on4409 on4673 ON4843 C9012 S2000A3 bul310xi 2SD5080 MN1016

    transistor C3866

    Abstract: Zener PH SEC E13009 ups circuit schematic diagram 1000w E13007 2 E13007 C3866 power transistor texas ttl 74L505 Transistor C3246
    Text: BID CΚΤ DOLLY L IST L OGO LIST SA F E TY & RELIA ΒL TY ΤΕΚ PIN SYSTE M DIGITA L IC's MEMORIES, MOS CMOS .EC L , TT L MICR OP R OC E SSOR SPE CIA L FUN CTION IC's DIGITAL l LINE AR K ARR AYS LIN E A R IC's (PUR CH ) ΤΕΚ-MADE IC's IC's INDEX (COL ORE D PGS)


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    mg75n2ys40

    Abstract: 2N3055 TOSHIBA mg150n2ys40 TLR103 TOSHIBA 2N3055 MG15N6ES42 2SK150A TOSHIBA MG150N2YS40 2sk270a S2530A
    Text: 小信号ダイオード SMD ● 当社は品質、信頼性の向上に努めておりますが、一般に半導体製品は誤作動した り故障することがあります。当社半導体製品をご使用いただく場合は、半導体製 品の誤作動や故障により、生命・身体・財産が侵害されることのないように、購入


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    PDF 050106DAA1 YTF842 2SK2387 YTF441 2SK2149 YTF613 2SK2381 YTF843 YTF442 mg75n2ys40 2N3055 TOSHIBA mg150n2ys40 TLR103 TOSHIBA 2N3055 MG15N6ES42 2SK150A TOSHIBA MG150N2YS40 2sk270a S2530A

    Untitled

    Abstract: No abstract text available
    Text: f Z 7 SCS-THOMSON ^7# MJE13006 MJE13007/A [» ^ iy iO T ® K S MOTOR CONTROL, SWITCH REGULATORS DESCRIPTION The MJE13006, MJE13007 and MJE13007A are si­ licon multiepitaxial mesa NPN transistors. They are mounted in Jedec TO-220 plastic package, inten­


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    PDF MJE13006 MJE13007/A MJE13006, MJE13007 MJE13007A O-220 JE13007A 2N5191, JE13006-M JE13007-M

    Untitled

    Abstract: No abstract text available
    Text: FI 73232J7 D D gqiO q g • ^ 3 SGS-THOMSON «[B miOT KS 3 - MJE13006 MJE13007/A S G S-THOMSON 3GE D MOTOR CONTROL, SWITCH REGULATORS DESC RIPTIO N The MJE13006, MJE13007 and MJE13007Aare si­ licon multiepitaxial mesa NPN transistors. They are mounted in Jedec TO-220 plastic package, inten­


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    PDF 73232J7 MJE13006 MJE13007/A MJE13006, MJE13007 MJE13007Aare O-220 MJE13007A MJE13006 7T2T237

    E13007

    Abstract: E13007 2 transistor e13007 je13007 e13007 1 E13007 transistor MJE13007
    Text: SEMICONDUCTOR TECHNICAL DATA MJE13007 t r ip l e d if f u s e d n p n t r a n s is t o r SWITCHING REGULATOR APPLICATION. HIGH VOLTAGE SWITCHING APPLICATION. HIGH SPEED DC-DC CONVERTER APPLICATION. FEATURES • Excellent Switching Times : ton=1.6juS Max. , tf=0.7j/S(Max.), at Ic=5A


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    PDF JE13007 E13007 E13007 2 transistor e13007 je13007 e13007 1 E13007 transistor MJE13007

    transistor cross reference

    Abstract: MPT3N40 Westinghouse SCR handbook LT 8224 ZENER DIODE sje389 N9602N npn transistor RCA 467 TFK 7 segment displays PUT 2N6027 delco 466
    Text: C K TBD DOLLY LIST LOGO LIST SAFETY & RELIABLTY TEK PN SYSTEM II DIGITAL IC's MEMORIES. MOS. CM OS.ECL. TTL MICROPROCESSOR SPECIAL FUNCTION IC's DIGITAL / LINEAR ARRAYS LINEAR IC'S (PURCH) TEK-MADE IC’s 3 IC's INDEX (COLORED PGS) INCL PRGMD. SCRND.ETC


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    BDX53D

    Abstract: D45VH4 BD807 D44H5 bdw41 BUS36 BD900 BD805 BDX33D D44H8
    Text: Silicijevi transistorji 0,5 A do 15 A Silicon transistors 0.5 A to 15 A Tip/Type NPN 2N6044 TIP101 BDX53B TIP131 BD899 BD899A BDX53C TIP132 BD901 2N6045 TIP102 MJE15028 BDX53D MJE15030 BU807 BU806 MJE13006 Uceo PNP 2N6041 TIP106 BDX54B TIP136 B0900 BD900A


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    PDF 2N6044 2N6041 TIP101 TIP106 1k/20k BDX53B BDX54B TIP131 TIP136 1k/15k BDX53D D45VH4 BD807 D44H5 bdw41 BUS36 BD900 BD805 BDX33D D44H8

    125VL

    Abstract: MJE13007A
    Text: ¿Z&MOSPEC SWITCHMODE SERIES NPN POWER TRANSISTORS . designed fo r use in high-voltage,high-speed,power switching NPN in inductive circuit, they are particularly suited for 115 and 220 V switchmode applications such as switching regulator's,inverters, DC


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    PDF MJE13007A lc-25uC 125VL MJE13007A

    mje13009 equivalent

    Abstract: MJEI3008 BUV46 equivalent buu26 ST MJE13007 mje13007 equivalent
    Text: Power Management Division Power Management Division bipolar pow er transistors Sem ela b continually strives to offer improved specification bipolar transistors. One example the B U L 74 A MJE13 009 equivalent , is aimed at the power supply/lighting market. I t ’s ideal


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    PDF BUL74A MJE13009 BUL36I T022SGO T0220 BUV46 MJE13004 BUL53A mje13009 equivalent MJEI3008 BUV46 equivalent buu26 ST MJE13007 mje13007 equivalent

    MJE13007E

    Abstract: JE13006 MJE13Q07 JE13007
    Text: MOTOROLA SC XSTRS/R 1EE F D I b3b72S4 a G fl SB T S ê | T - 33-13 MOTOROLA MJE13006 MJE13007 SEMICONDUCTOR TECHNICAL DATA D esigners Data, Sheet 8 AM PERE NPN SILICON POWER TRANSISTORS 3 00 and 4 0 0 V O L T S 80 W ATTS SWITCHMODE SERIES NPN SILICON POWER TRANSISTORS


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    PDF b3b72S4 MJE13006 MJE13007 MJE13007E JE13006 MJE13Q07 JE13007

    y51 h 120c

    Abstract: bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711
    Text: Towers' International Transistor Selector ! o Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U pdate Three London: NEW YORK


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    PDF 500MA 500MA 240MWF 240MWF y51 h 120c bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711

    70H40

    Abstract: transistor equivalent d2012 2SC734 equivalent 3sk73 equivalent 2sb502 2sa776 bl 2sc2075 equivalent 2sk For Low Noise Audio Amplifier Applications 2sa970 BL equivalent 2sa776 gr
    Text: AUDIO SMALL SIGNAL AMP Package USM Super M ini M ini T O -9 2 A p p lic a tio n • * « m • 2SA1162 2SA1163 General purpose 2SC1815 2SA1015 2SC2458 2SC2459 2SA1048 2SA1049 2SC2712 2SC2713 General purpose L o w Noise 2SC1815 2SA1015© 2SC2458© 2SA2048©


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    PDF 2SA1162 2SA1163 2SC1815 2SA1015 2SC2458 2SC2459 2SA1048 2SA1049 2SC2712 2SC2713 70H40 transistor equivalent d2012 2SC734 equivalent 3sk73 equivalent 2sb502 2sa776 bl 2sc2075 equivalent 2sk For Low Noise Audio Amplifier Applications 2sa970 BL equivalent 2sa776 gr

    transistor f6 13003

    Abstract: equivalent transistor bj 131-6 transistor Eb 13003 BM BB112 smd TRANSISTOR code marking 2F 6n a1211 lg CQY58 BU705 TRANSISTOR 131-6 BJ 026 philips om350
    Text: W IDEBAND TRANSISTORS AND W IDEBAND HYBR ID 1C MODULES page P refa ce. 3 Selection guide Wideband transistors.


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    PDF SC08b transistor f6 13003 equivalent transistor bj 131-6 transistor Eb 13003 BM BB112 smd TRANSISTOR code marking 2F 6n a1211 lg CQY58 BU705 TRANSISTOR 131-6 BJ 026 philips om350

    B0411

    Abstract: B0733 THD200F1 dk52 2SC4977 2N5415 REPLACEMENT TIP 2n3055 BD68D SGS-Thomson cross reference BUX37 THOMSON
    Text: CROSS REFERENCE INDUSTRY STANDARD SGS-THOMSOH SGS-THOMSON PAGE REPLACEMENT NEAREST PREFERRED KDUSTHY STANDARD 2N3016 2N5339 93 2N3772 2N3021 BDW52C 169 2N3789 2N3022 BDW52C BDW52C BDW52C 169 169 169 2N3790 2N3791 2N3792 BDW52C BDW52C 169 169 77 2N3863 2N3864


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    PDF 2N3016 2N3021 2N3022 2N3023 2N3024 2N3025 2N3026 2N3055 2N3076 2N3171 B0411 B0733 THD200F1 dk52 2SC4977 2N5415 REPLACEMENT TIP 2n3055 BD68D SGS-Thomson cross reference BUX37 THOMSON