SI PNP LP HF Search Results
SI PNP LP HF Result Highlights (5)
Part |
ECAD Model |
Manufacturer |
Description |
Download |
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TTA012 |
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PNP Bipolar Transistor / VCEO=-80 V / IC=-4 A / hFE=100~200 / VCE(sat)=-0.22 V / tf=35 ns / PW-Mini |
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TTA004B |
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PNP Bipolar Transistor / VCEO=-160 V / IC=-1.5 A / hFE=140~280 / VCE(sat)=-0.5 V / TO-126N |
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TTA011 |
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PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / PW-Mini |
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2SA1943 |
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PNP Bipolar Transistor / VCEO=-230 V / IC=-15 A / hFE=55~160 / VCE(sat)=-3.0 V / TO-3P(L) |
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TTA014 |
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PNP Bipolar Transistor / VCEO=-120 V / IC=-2.5 A / hFE=120~240 / VCE(sat)=-0.35 V / tf=65 ns / New PW-Mold |
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SI PNP LP HF Datasheets Context Search
Catalog Datasheet |
Type |
Document Tags |
PDF |
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2N5910
Abstract: Si PNP LP HF
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Original |
2N5910 com/2n5910 2N5910 Si PNP LP HF | |
2n3644
Abstract: max 1788 2N364
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2N3644 com/2n3644 2N3644 max 1788 2N364 | |
2N3494Contextual Info: 2N3494 Si PNP LP HF BJT 12.35 Transistors Transistors Bipolar Si PN. 1 of 1 Home Part Number: 2N3494 Online Store 2N3494 Diodes Si PNP LP HF BJ T Transistors Enter code INTER3 at checkout.* Integrated Circuits |
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2N3494 com/2n3494 2N3494 | |
2N3645
Abstract: 25n60 60N60
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2N3645 com/2n3645 2N3645 25n60 60N60 | |
Contextual Info: 2N3496 Si PNP LP HF BJT 12.35 Transistors Transistors Bipolar Si PN. 1 of 1 Home Part Number: 2N3496 Online Store 2N3496 Diodes Si PNP LP HF BJ T Transistors Enter code INTER3 at checkout.* Integrated Circuits |
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2N3496 com/2n3496 2N3496 | |
2N5139Contextual Info: 2N5139 Si PNP LP HF BJT 0.20 Transistors Bipolar Silicon PNP Low-. 1 of 1 Home Part Number: 2N5139 Online Store 2N5139 Diodes Si PNP LP HF BJT Transistors Enter code INTER3 at checkout.* Integrated Circuits |
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2N5139 com/2n5139 2N5139 | |
Contextual Info: 2N3307 Si PNP LP HF BJT 13.39 Transistors Bipolar Silicon PNP Low. 1 of 1 Home Part Number: 2N3307 Online Store 2N3307 Diodes Si PNP LP HF BJ T Transistors Enter code INTER3 at checkout.* Integrated Circuits |
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2N3307 com/2n3307 2N3307 O-72var | |
2N3134Contextual Info: 2N3134 Si PNP LP HF BJT 62.50 Transistors Bipolar Silicon PNP Low. 1 of 1 Home Part Number: 2N3134 Online Store 2N3134 Diodes Si PNP LP HF BJ T Transistors Enter code INTER3 at checkout.* Integrated Circuits |
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2N3134 com/2n3134 2N3134 | |
bjt specifications
Abstract: 2N869A
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2N869A 2N869A com/2n869a bjt specifications | |
Contextual Info: 2NL3799 Transistors Si PNP LP HF BJT Military/High-RelN V BR CEO (V)60 V(BR)CBO (V) I(C) Max. (A)100m Absolute Max. Power Diss. (W) Maximum Operating Temp (øC) I(CBO) Max. (A) @V(CBO) (V) (Test Condition) h(FE) Min. Current gain. h(FE) Max. Current gain. |
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2NL3799 Freq125M | |
Contextual Info: YTS2906 Transistors Si PNP LP HF BJT Military/High-RelN V BR CEO (V)30 V(BR)CBO (V) I(C) Max. (A)600m Absolute Max. Power Diss. (W)200m Maximum Operating Temp (øC) I(CBO) Max. (A) @V(CBO) (V) (Test Condition) h(FE) Min. Current gain.40 h(FE) Max. Current gain.120 |
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YTS2906 Freq200M | |
Contextual Info: MMBT3251 Transistors Si PNP LP HF BJT Military/High-RelN V BR CEO (V)40 V(BR)CBO (V)50 I(C) Max. (A) Absolute Max. Power Diss. (W)350m Maximum Operating Temp (øC) I(CBO) Max. (A) @V(CBO) (V) (Test Condition) h(FE) Min. Current gain.30 h(FE) Max. Current gain. |
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MMBT3251 Freq300M | |
Contextual Info: 2NL3251 Transistors Si PNP LP HF BJT Military/High-RelN V BR CEO (V)40ã V(BR)CBO (V) I(C) Max. (A)100m Absolute Max. Power Diss. (W) Maximum Operating Temp (øC) I(CBO) Max. (A) @V(CBO) (V) (Test Condition) h(FE) Min. Current gain.300 h(FE) Max. Current gain. |
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2NL3251 Freq300M | |
Contextual Info: 2SB1527 Transistors Si PNP LP HF BJT Military/High-RelN V BR CEO (V)15 V(BR)CBO (V) I(C) Max. (A)800m Absolute Max. Power Diss. (W)200m Maximum Operating Temp (øC) I(CBO) Max. (A) @V(CBO) (V) (Test Condition) h(FE) Min. Current gain.70 h(FE) Max. Current gain. |
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2SB1527 Freq250MÃ | |
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Contextual Info: 2SA1548 Transistors Si PNP LP HF BJT Military/High-RelN V BR CEO (V)32 V(BR)CBO (V) I(C) Max. (A)500m Absolute Max. Power Diss. (W)300m Maximum Operating Temp (øC) I(CBO) Max. (A) @V(CBO) (V) (Test Condition) h(FE) Min. Current gain.82 h(FE) Max. Current gain. |
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2SA1548 Freq200M | |
Contextual Info: ZTX214C Transistors Si PNP LP HF BJT Military/High-RelN V BR CEO (V)30 V(BR)CBO (V)45 I(C) Max. (A)200m Absolute Max. Power Diss. (W) Maximum Operating Temp (øC) I(CBO) Max. (A) @V(CBO) (V) (Test Condition) h(FE) Min. Current gain.350 h(FE) Max. Current gain. |
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ZTX214C Freq200M | |
Contextual Info: ECG2358 Transistors Si PNP LP HF BJT Military/High-RelN V BR CEO (V)50 V(BR)CBO (V)50 I(C) Max. (A)100m Absolute Max. Power Diss. (W)300m Maximum Operating Temp (øC) I(CBO) Max. (A) @V(CBO) (V) (Test Condition) h(FE) Min. Current gain.50 h(FE) Max. Current gain. |
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ECG2358 Freq250M | |
Contextual Info: NTE2362 Transistors Si PNP LP HF BJT Military/High-RelN V BR CEO (V)50 V(BR)CBO (V)60 I(C) Max. (A)500m Absolute Max. Power Diss. (W)300m Maximum Operating Temp (øC) I(CBO) Max. (A) @V(CBO) (V) (Test Condition) h(FE) Min. Current gain.200 h(FE) Max. Current gain. |
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NTE2362 Freq200M | |
Contextual Info: BC456C Transistors Si PNP LP HF BJT Military/High-RelN V BR CEO (V)30 V(BR)CBO (V)30 I(C) Max. (A)100m Absolute Max. Power Diss. (W)300m Maximum Operating Temp (øC) I(CBO) Max. (A) @V(CBO) (V) (Test Condition) h(FE) Min. Current gain.800 h(FE) Max. Current gain. |
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BC456C Freq300M | |
Contextual Info: MMST3906 Transistors Si PNP LP HF BJT Military/High-RelN V BR CEO (V)40 V(BR)CBO (V)40 I(C) Max. (A)200m Absolute Max. Power Diss. (W)200m Maximum Operating Temp (øC)150õ I(CBO) Max. (A)100nx @V(CBO) (V) (Test Condition)40.0 h(FE) Min. Current gain.100 |
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MMST3906 Freq250M | |
Contextual Info: MMBT6520LT1 Transistors Si PNP LP HF BJT Military/High-RelN V BR CEO (V)350 V(BR)CBO (V)350 I(C) Max. (A)500m Absolute Max. Power Diss. (W)225m Maximum Operating Temp (øC)150õ I(CBO) Max. (A)50n @V(CBO) (V) (Test Condition)250 h(FE) Min. Current gain.30 |
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MMBT6520LT1 Freq40M | |
Contextual Info: 2SA1559 Transistors Si PNP LP HF BJT Military/High-RelN V BR CEO (V)32 V(BR)CBO (V) I(C) Max. (A)500m Absolute Max. Power Diss. (W)300m Maximum Operating Temp (øC) I(CBO) Max. (A) @V(CBO) (V) (Test Condition) h(FE) Min. Current gain.82 h(FE) Max. Current gain. |
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2SA1559 Freq200M | |
Contextual Info: SST4126 Transistors Si PNP LP HF BJT Military/High-RelN V BR CEO (V)25 V(BR)CBO (V)25 I(C) Max. (A)200m Absolute Max. Power Diss. (W) Maximum Operating Temp (øC) I(CBO) Max. (A)50n @V(CBO) (V) (Test Condition)20 h(FE) Min. Current gain.120 h(FE) Max. Current gain.360 |
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SST4126 Freq250M | |
Contextual Info: MPS3905 Transistors Si PNP LP HF BJT Military/High-RelN V BR CEO (V)40 V(BR)CBO (V)40 I(C) Max. (A)200m Absolute Max. Power Diss. (W)625m Maximum Operating Temp (øC)140õ I(CBO) Max. (A)50n÷ @V(CBO) (V) (Test Condition) h(FE) Min. Current gain.50 h(FE) Max. Current gain. |
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MPS3905 Freq200M |