LS900-SI-02-AXX
Abstract: avrisp WinAVR bpsk modulation AT86RF212 PCB ATXMEGA256A3
Text: SiFLEX02 TRANSCEIVER MODULE LS900-SI-02-AXX DATASHEET Integrated Transceiver Modules for ZigBee / 802.15.4 900 MHz Development Kit Available: LSDEV-SI02-A30 FEATURES DESCRIPTION • 250mW output power Long range: 2 miles Up to 1Mbps RF data rate
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PDF
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SiFLEX02
LS900-SI-02-AXX
LSDEV-SI02-A30
250mW
ATXMEGA256A3
900MHz
AT86RF212
ATXMEGA25
330-0009-R2
avrisp
WinAVR
bpsk modulation
AT86RF212 PCB
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xmega 128
Abstract: AVRISP mkII AT86RF212 LS900-SI-02-A50 LSDEV-SI02-A30 XMEGA Application Notes AT86RF212 PCB ATXMEGA256A3 W3112A AVR soldering temperature
Text: SiFLEX02 TRANSCEIVER MODULE LS900-SI-02-AXX DATASHEET Integrated Transceiver Modules for ZigBee / 802.15.4 900 MHz Development Kit Available: LSDEV-SI02-A30 FEATURES DESCRIPTION • 250mW output power • Long range: 2 miles • Up to 1Mbps RF data rate
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Original
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PDF
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SiFLEX02
LS900-SI-02-AXX
LSDEV-SI02-A30
250mW
ATXMEGA256A3
SFLX-DATA-0001-01
xmega 128
AVRISP mkII
AT86RF212
LS900-SI-02-A50
LSDEV-SI02-A30
XMEGA Application Notes
AT86RF212 PCB
W3112A
AVR soldering temperature
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HX6408
Abstract: No abstract text available
Text: Honeywell Advance information HX6408 512K x 8 STATIC RAM—SOI FEATURES RADIATION OTHER • Fabricated with RICMOS V Silicon on Insulator SOI 0.5 |im Process (Lef) = 0.4 pm) • Read/Write Cycle Times <25 ns (-55 to 125°C) • Total Dose Hardness >5x105rad(Si02)
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OCR Scan
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PDF
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HX6408
5x105rad
1x109
1x101
40-Lead
D2888
3Q172S
HX6408
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Untitled
Abstract: No abstract text available
Text: Honeyw ell HC6664 Military Products Preliminary 8K x 8 RADIATION-HARDENED ROM FEATURES OTHER RADIATION • Fabricated with RICMOS Epitaxial 1.2 jim Process • Typical 30 ns Access Time • Total Dose Hardness through 1x10 rad Si02 • Low Operating Power
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OCR Scan
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PDF
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1x10u
1x109
1x101
1x108
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Untitled
Abstract: No abstract text available
Text: D b3E 4551Ö72 DDG1Q1D HONEYWELL/ S MULTICHIP MODULES Honeywell TÖ3 • H 0 N 3 S E C Preliminary 64K X 8 RADIATION-TOLERANT SRAM HC80805 FEATURES RADIATION OTHER • Total Dose Hardness through 1x10s rad Si02 • Spare Memory Chip can be Substituted On-The-Fly
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OCR Scan
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PDF
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HC80805
1x10s
1x109
1x102upsets/module-day)
BADDR11
BARRD10
BDISCRI03
BDISCRI02
BDISCRI01
BADDR21
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Untitled
Abstract: No abstract text available
Text: b3E J> m 45S 1 Ö 7S GATE ARRAYS QDD1Q2G ^ 5 5 • H 0 N 3 Honeywell HONE YÜ1ELL/S S E C RICMOS SEA OF TRANSISTORS GATE ARRAY HR1060 FEATURES RADIATION HARDNESS OTHER • Total Dose Hardness of >1x106 rad Si02 • Wafers from DESC certified QML 1.2 ¡im process
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OCR Scan
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PDF
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HR1060
1x106
1x109rad
1x1012rad
1x109upsets/bit-day
1x1014cnrr2
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Untitled
Abstract: No abstract text available
Text: Honeywell Military & Space Products 128K x 8 STATIC RAM—SOI HX6228 FEATURES RADIATION OTHER • Fabricated with RICMOS IV Silicon on Insulator SOI 0.7 |im Process (Lef1= 0.55 ^m) • Read/Write Cycle Times < 16 ns (Typical) <2 5 ns (-55 to 125°C) • Total Dose Hardness through 1x106 rad(Si02)
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OCR Scan
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PDF
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HX6228
1x106
1x101
1x109
32-Lead
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Untitled
Abstract: No abstract text available
Text: Honeywell Military & Space Products 5.12 MEGABIT MEMORY MODULE RADIATION OTHER • Fabricated with RICMOS IV Silicon on Insulator SOI 0.75 urn Process (L#fl = 0.6 |im) • Read/Write Cycle Times <,17 ns (Typical) <25 ns (-55 to 125°C) • Total Dose Hardness through 1x106 rad (Si02)
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OCR Scan
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PDF
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HX84050
1x106
1x10s
200-Lead
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Untitled
Abstract: No abstract text available
Text: Honeywell Military & Space Products 32K x 8 STATIC RAM—SOI HX6256 FEATURES RADIATION OTHER • Fabricated with RICMOS IV Silicon on Insulator SOI 0.75 p.m Process (Leff= 0.6 p,m) • Listed On SMD#5962-95845 • Total Dose Hardness through 1x106rad(Si02)
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OCR Scan
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PDF
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1x106rad
1x101
1x109
HX6256
28-Lead
GQG1711
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Untitled
Abstract: No abstract text available
Text: Honeywell 32K X 8 RADIATION-HARDENED STATIC RAM HC6856 FEATURES RADIATION • Fabricated with RICMOS'“ IV Bulk 0.8 urn Process • Total Dose Hardness through 1x10e rad Si02 • Neutron Hardness through 1x1014 cnrr2 OTHER • Read/Write Cycle Times s 40 ns (-55 to 125°C)
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OCR Scan
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PDF
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1x10e
1x101
36-Lead
28-Lead
HC6856
1E-10
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Untitled
Abstract: No abstract text available
Text: LOGIC DEVICES INC at.E D • S5b5TQS O O O U O b 2 ■ T -9 é ~ 2 3 -a sr 64K x 1 Radiation-Hard Static RAM FEATURES □ 64K x 1 Radiation-Hard Static RAM with Separate I/O , Chip Select Powerdown □ Address Access Time: £ 5 0 n sat8 0 °C □ Total Dose: £10* Rads Si02
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OCR Scan
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PDF
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L7CX187
L7CX187
X187-A
t-46-23-05
24-pln
L7CX187HC50
L7CX187HM50
L7CX187HME50
L7CX187HMB50
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Untitled
Abstract: No abstract text available
Text: Honeywell Military & Space Products 32K x 8 STATIC RAM—SOI HX6256 FEATURES RADIATION OTHER • Fabricated with RICMOS IV Silicon on Insulator SOI 0.75 urn Process (Leff= 0.6 )im) • Read/Write Cycle Times < 17 ns (Typical) <25 ns (-55 to 125°C) • Total Dose Hardness through 1x106rad(Si02)
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OCR Scan
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PDF
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HX6256
1x106rad
1x1014cm
1x109
1x101
28-Lead
4551A72
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Untitled
Abstract: No abstract text available
Text: Honeywell Military Products Advance Information 128K x 8 RADIATION-HARDENED STATIC RAM-SOI HX6228 FEATURES OTHER RADIATION • Fabricated with RICMOS IV-E Silicon on Insulator SOI 0.7 |xm Process • Read/Write Cycle Times <25 ns (-55 to 125°C) • Total Dose Hardness through 1x106 rad(Si02)
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OCR Scan
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PDF
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HX6228
1x106
1x1014cm
1x109rad
1x101
32-Lead
1x106rad
2x105
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Untitled
Abstract: No abstract text available
Text: Honeywell HC6116—TTL INPUT Digital Technologies Preliminary 2Kx 8 RADIATION-HARDENED STATIC RAM FEATURES RADIATION OTHER • Fabricated with RICMOS Epitaxial 1.2 iim Process • Typical 90 ns Access Time • Total Dose Hardness through 1x10 rad Si02
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OCR Scan
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PDF
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HC6116--TTL
1x10u
1x109
1x101
86A-6/88
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A479SS
Abstract: A476 A480S Al203 A473 Z201N 0 280 130 023 A459 A479 F1120
Text: KyD C ERa T h e N e w V a l u e F r o n t ie r C h a r a c t e r is t ic s o f M a te ria l A445 W Â ÎB -§ - M ateriaIC ode 7tJl'XT 7 # F0RSTERITE 2Mg0-Si02 A L U M IN A (Al20 3) U n it M a te ria l I A459 I A473 I A476 I A479 I A479S^ I A480S I F1120
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OCR Scan
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2Mg0-Si02)
Mg0-Si02)
-2Si02)
A479SS
A480S
F1023
F1120
Z201N
ML652
Al203
A476
A480S
A473
0 280 130 023
A459
A479
F1120
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Untitled
Abstract: No abstract text available
Text: Honeywell RICMOS GATE ARRAYS HR2000 FAMILY FEATURES • Fabricated on Honeywell’s Radiation Hardened 0.65 M-mLeff RICMOS™ IV Bulk Process • Total Dose Hardness >1x10 rad Si02 • Dose Rate Upset Hardness >1x109rad(Si)/sec • Array Sizes from 10K to 336K Available Gates (Raw)
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OCR Scan
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PDF
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HR2000
1x109rad
1x101
1x101/cm2
HR2000
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Untitled
Abstract: No abstract text available
Text: Honeywell Military & Space Products Advance Information HX9100 64 X 64 CROSSBAR FEATURES • Fabricated with RICMOS“ IV Silicon on Insulator S0l 0.8 jxm Process (Letf = 0.65 nm) • CMOS Compatible I/O Total Dose Hardness of >1x10 rad(Si02) Dose Rate Upset Hardness >1x1011rad(Si)/sec (5V)
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OCR Scan
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PDF
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HX9100
1x101
1x1012rad
1x101/cm2
HX9100
4SS1A72
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Untitled
Abstract: No abstract text available
Text: TOSHIBA UNDER DEVELOPMENT TMP90CM38 4.11 Serial Channel SI02 Timing Chart EXTERNAL CLK - tSCL ' - tsCH SCLK2 I X TXD2 OUTPUT DATA •tSR D ■ ■tH SR • RXD2 (INPUT DATA)" VALID :C INTERNAL tSCY tSCL SCLK2 . tsC H . J .t tSKD O TXD2 (OUTPUT DATA) tSRD
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OCR Scan
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PDF
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TMP90CM38
MCU90-489
MCU90-490
TMP90PM38
TMP90PM38F
TMP90PM38T
TMP90PM38
TMP90CM38.
MCU90-507
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Untitled
Abstract: No abstract text available
Text: LOGIC DEVICES INC 2bE d • sstsiQS a o a n m _ 256K x 1 Radiation-Hard Static RAM FEATURES □ 256K x 1 Radiation-Hard Static RAM with Separate I/O , Chip Select Powerdown □ Address Acces9 Time: S SO ns at 80°C □ Total Dose: £106 Rads Si02
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OCR Scan
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PDF
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24-pin
L7CX197
L7CX197HC50
L7CX197HM50
L7CX197HME50
L7CX197HMB50
X197-A
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S2L00
Abstract: No abstract text available
Text: 256K x 4 molale V id e o R A M M V M 4 2 5 9 -1 0 /1 2 Issue 2.0 : February 1992 P R E L IM IN A R Y S e m ic o n d u c to r Inc. Pin Definition 262,144 X 4 CMOS Fully Featured Video RAM SC SI01 SI02 DT/OE W1/I01 W 2/I02 WB/WE NC RAS A8 A6 A5 A4 Vcc Features
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OCR Scan
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PDF
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MIL-STD883D
S2L00
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Untitled
Abstract: No abstract text available
Text: Honeywell Military & Space Products 32K x 8 ROM— SOI HX6656 FEATURES RADIATION OTHER • Fabricated with RICMOS IV Silicon on Insulator SOI 0.75 |am Process (Leff = 0.6 |im) • Read Cycle Times < 17 ns (Typical) <25 ns (-55 to 125°C) • Total Dose Hardness through 1x106rad(Si02)
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OCR Scan
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PDF
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HX6656
1x106rad
1x109
1x101
1x10U
28-Lead
MIL-STD-18
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HX6356
Abstract: smd transistor AL2
Text: Honeywell Aerospace Electronics 32K X 8 STATIC RAM—SOI HX6356 FEATURES RADIATION OTHER • Fabricated with RICMOS IV Silicon on Insulator SOI 0.75 pm Process (Leff= 0.6 |iim) • Listed On SMD# 5962-95845 • Total Dose Hardness through 1x106rad(Si02)
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OCR Scan
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PDF
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1x106rad
1x1014crrv2
1x101
HX6356
36-Lead
1253C,
HX6356
smd transistor AL2
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honeywell memory sram
Abstract: 419B3E
Text: b3E D 4551072 DGQ1D3M 417 • H 0 N 3 Honeywell RICMOS SEA OF TRANSISTORS GATE ARRAY HR2210 FEATURES OTHER RADIATION HARDNESS • Total Dose Hardness of >1x106 rad Si02 • Dose Rate Upset Hardness > 1x10° rad(Si)/sec • Dose Rate Survivability > 1x1012rad(Si)/sec
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OCR Scan
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PDF
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HR2210
1x106
1x1012rad
1x101
honeywell memory sram
419B3E
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1A15
Abstract: honeywell hr 20 HLX6408
Text: Honeywell Advance Information 512K x 8 STATIC RAM—SOI HLX6408 FEATURES RADIATION OTHER • Fabricated with RICMOS IV Silicon on Insulator SOI 0.5 |im Process (LeH= 0.4 |im) • Read/Write Cycle Times < 20 ns (Typical) ¿25 ns (-55 to 125°C) • Total Dose Hardness through 5x105rad(Si02)
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OCR Scan
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PDF
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5x105rad
1x101
HLX6408
1x109
40-Lead
1A15
honeywell hr 20
HLX6408
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